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Direct probing of band-structure Berry phase in diluted magnetic semiconductors
Authors:
M. Granada,
D. Lucot,
R. Giraud,
A. Lemaître,
C. Ulysse,
X. Waintal,
G. Faini
Abstract:
We report on experimental evidence of the Berry phase accumulated by the charge carrier wave function in single-domain nanowires made from a (Ga,Mn)(As,P) diluted ferromagnetic semiconductor layer. Its signature on the mesoscopic transport measurements is revealed as unusual patterns in the magnetoconductance, that are clearly distinguished from the universal conductance fluctuations. We show that…
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We report on experimental evidence of the Berry phase accumulated by the charge carrier wave function in single-domain nanowires made from a (Ga,Mn)(As,P) diluted ferromagnetic semiconductor layer. Its signature on the mesoscopic transport measurements is revealed as unusual patterns in the magnetoconductance, that are clearly distinguished from the universal conductance fluctuations. We show that these patterns appear in a magnetic field region where the magnetization rotates coherently and are related to a change in the band-structure Berry phase as the magnetization direction changes. They should be thus considered as a band structure Berry phase fingerprint of the effective magnetic monopoles in the momentum space. We argue that this is an efficient method to vary the band structure in a controlled way and to probe it directly. Hence, (Ga,Mn)As appears to be a very interesting test bench for new concepts based on this geometrical phase.
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Submitted 12 June, 2015;
originally announced June 2015.
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Electric-field control of the magnetic anisotropy in an ultrathin (Ga,Mn)As/(Ga,Mn)(As,P) bilayer
Authors:
Tarik Niazi,
Mathieu Cormier,
Damien Lucot,
Ludovic Largeau,
Vincent Jeudy,
Joel Cibert,
Aristide Lemaître
Abstract:
We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. The carrier distribution and therefore the strength of the effective anisotropy is controlled by the gate voltage of a field effect device. Anomalous Hall Effect measurements confirm that a depletion of carriers in the upp…
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We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. The carrier distribution and therefore the strength of the effective anisotropy is controlled by the gate voltage of a field effect device. Anomalous Hall Effect measurements confirm that a depletion of carriers in the upper (Ga,Mn)As layer results in the decrease of the in-plane anisotropy. The uniaxial anisotropy field is found to decrease by a factor ~ 4 over the explored gate-voltage range, so that the transition to an out-of-plane easy-axis configuration is almost reached.
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Submitted 29 November, 2012;
originally announced November 2012.
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Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires
Authors:
Damien Lucot,
Fauzia Jabeen,
Jean-Christophe Harmand,
Gilles Patriarche,
Romain Giraud,
Giancarlo Faini,
Dominique Mailly
Abstract:
We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insulating GaAs overlayer and connected as grown in a two probe set-up using the highly doped growth substrate and a top diffused contact. The measured conductance shows a non-ohmic behavior with temperature and voltage-bias…
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We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insulating GaAs overlayer and connected as grown in a two probe set-up using the highly doped growth substrate and a top diffused contact. The measured conductance shows a non-ohmic behavior with temperature and voltage-bias dependences following power laws, as expected for a quasi-1D system.
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Submitted 2 January, 2011;
originally announced January 2011.
