Showing 1–3 of 3 results for author: Luchnikov, L O

Improvement of the perovskite photodiodes performance via advanced interface engineering with polymer dielectric

Authors: A. P. Morozov, L. O. Luchnikov, S. Yu. Yurchuk, A. R. Ishteev, P. A. Gostishchev, S. I. Didenko, N. S. Saratovsky, S. S. Kozlov, D. S. Muratov, Yu. N. Luponosov, D. S. Saranin

Abstract: Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and ele… ▽ More Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and electron transport junction in p-i-n perovskite photodiodes. Our complex work demonstrates that interface engineering with P(VDF-TrFE) induces significant Fermi level pinning, reducing from 4.85 eV for intrinsic perovskite to 4.28 eV for the configuration with dielectric interlayers. The integration of P(VDF-TrFE) into the perovskite film did not affect the morphology and crystal structure, but significantly changed the charge transport and device performance. IV curve analysis and 2-diode model calculations showed enhanced shunt properties, a decreased non-ideality factor, and reduced saturation dark current. We have shown that the complex introduction of P(VDF-TrFE) into the absorbers bulk and on its surface is essential to reduce the impact of the trap** processes. For P(VDF-TrFE) containing devices, we increased the specific detectivity from 10^11 to 10^12 Jones, expanded the linear dynamic range up to 100 dB, and reduced the equivalent noise power to 10^-13 W*Hz^-0.5. Reducing non-radiative recombination contributions significantly enhanced device performance, improving rise/fall times from 6.3/10.9 us to 4.6/6.5 us. The cut-off frequency (3dB) increased from 64.8 kHz to 74.8 kHz following the introduction of the dielectric. These results provide new insights into the use of organic dielectrics and an improved understanding of trap-states and ion defect compensation for detectors based on perovskite heterostructures. △ Less

Submitted 3 July, 2024; originally announced July 2024.

Triphenylamine-based interlayer with carboxyl anchoring group for tuning of charge collection interface in stabilized p-i-n perovskite solar cells and modules

Authors: P. K. Sukhorukova, E. A. Ilicheva, P. A. Gostishchev, L. O. Luchnikov, M. M. Tepliakova, D. O. Balakirev, I. V. Dyadishchev, A. A. Vasilev, D. S. Muratov, Yu. N. Luponosov, A. Di Carlo, D. S. Saranin

Abstract: A novel triphenylamine-based hole transport material (HTM) with a carboxyl anchoring group (TPATC) was developed for tuning the interface between nanocrystalline NiO and double cation CsCH3(NH2)2PbI3-xClx absorber in p-i-n device architectures. We present a unique comprehensive confinement study of PSCs with TPATC as the self-assembled HTM, including analysis of numerical defect parameters, phase… ▽ More A novel triphenylamine-based hole transport material (HTM) with a carboxyl anchoring group (TPATC) was developed for tuning the interface between nanocrystalline NiO and double cation CsCH3(NH2)2PbI3-xClx absorber in p-i-n device architectures. We present a unique comprehensive confinement study of PSCs with TPATC as the self-assembled HTM, including analysis of numerical defect parameters, phase composition evolution, and up-scaling capabilities. Our investigation shows that the ultrathin TPATC interlayer effectively passivates traps, increases work-function of HTL by about ~0.2 eV, and enhances the charge carrier extraction efficiency. Advanced transient spectroscopy measurements revealed that modification of the NiO surface with TPATC in perovskite solar cells (PSCs) reduces the concentration of ionic defects by an order of magnitude. Interface engineering with TPATC allowed to reach power conversion efficiency of 20.58% for small area devices (0.15 cm2) under standard AM 1.5 G conditions. Using TPATC interlayer also provided stabilized performance of PSCs under operation conditions and improved sustainability of the perovskite absorber to decomposition. After continuous light-soaking (1000 h, ISOS-L-2 protocol), NiO/TPATC devices showed a slight decrease of 2% in maximum power. In contrast, NiO PSCs demonstrated decrease in power output (>20%) after 400 h. We explored the potential of TPATC to modify interfaces in large-area perovskite solar modules (PSM, active area-64.8 cm2, 12 sub-cells). By applying slot-die-coated TPATC, the PCE at AM 1.5 G conditions increased from 13.22% for NiO PSM to 15.64% for NiO/TPATC ones. This study provides new insights into the interface engineering for p-i-n perovskite solar cells, behavior of the ionic defects and their contribution to the long-term stability. △ Less

Submitted 22 November, 2023; originally announced November 2023.

Ion-beam sputtering of NiO hole transporting layers for p-i-n halide perovskite solar cells

Authors: P. Gostishchev, L. O. Luchnikov, O. Bronnikov, V. Kurichenko, D. S. Muratov, A. A. Aleksandrov, A. R. Tameev, M. P. Tyukhova, S. Le Badurin. I. V., Ryabtseva M. V., D. Saranin, A. Di Carlo

Abstract: Ion-beam sputtering offers significant benefits in terms of deposition uniformity and pinhole-free thin-films without limiting the scalability of the process. In this work, the reactive ion-beam sputtering of nickel oxide has been developed for the hole transporting layer of a p-i-n perovskite solar cells (PCSs). The process is carried out by oxidation of the scattered Ni particles with additional… ▽ More Ion-beam sputtering offers significant benefits in terms of deposition uniformity and pinhole-free thin-films without limiting the scalability of the process. In this work, the reactive ion-beam sputtering of nickel oxide has been developed for the hole transporting layer of a p-i-n perovskite solar cells (PCSs). The process is carried out by oxidation of the scattered Ni particles with additional post-treatment annealing regimes. Using deposition rate of 1.2 nm/min allowed growth of very uniform NiO coating with the roughness below 0.5 nm on polished Si wafer (15x15 cm2). We performed a complex investigation of structural, optical, surface and electrical properties of the NiO thin-films. The post-treatment annealing (150-300C) was considered as an essential process for improvement of the optical transparency, decrease of defects concentration and gain of the charge carrier mobility. As result, the annealed ion-beam sputtered NiO films delivered a power conversion efficiency (PCE) up to 20.14%, while device without post-treatment reached the value of 11.84%. The improvement of the output performance originated from an increase of the short-circuit current density (Jsc), open circuit voltage (Voc), shunt and contact properties in the devices. We also demonstrate that the ion-beam sputtering of NiO can be successfully implemented for the fabrication of large area modules (54.5 cm2) and PSCs on a flexible plastic substrate (125 microns). △ Less

Submitted 29 June, 2023; originally announced June 2023.