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Improvement of the perovskite photodiodes performance via advanced interface engineering with polymer dielectric
Authors:
A. P. Morozov,
L. O. Luchnikov,
S. Yu. Yurchuk,
A. R. Ishteev,
P. A. Gostishchev,
S. I. Didenko,
N. S. Saratovsky,
S. S. Kozlov,
D. S. Muratov,
Yu. N. Luponosov,
D. S. Saranin
Abstract:
Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and ele…
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Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and electron transport junction in p-i-n perovskite photodiodes. Our complex work demonstrates that interface engineering with P(VDF-TrFE) induces significant Fermi level pinning, reducing from 4.85 eV for intrinsic perovskite to 4.28 eV for the configuration with dielectric interlayers. The integration of P(VDF-TrFE) into the perovskite film did not affect the morphology and crystal structure, but significantly changed the charge transport and device performance. IV curve analysis and 2-diode model calculations showed enhanced shunt properties, a decreased non-ideality factor, and reduced saturation dark current. We have shown that the complex introduction of P(VDF-TrFE) into the absorbers bulk and on its surface is essential to reduce the impact of the trap** processes. For P(VDF-TrFE) containing devices, we increased the specific detectivity from 10^11 to 10^12 Jones, expanded the linear dynamic range up to 100 dB, and reduced the equivalent noise power to 10^-13 W*Hz^-0.5. Reducing non-radiative recombination contributions significantly enhanced device performance, improving rise/fall times from 6.3/10.9 us to 4.6/6.5 us. The cut-off frequency (3dB) increased from 64.8 kHz to 74.8 kHz following the introduction of the dielectric. These results provide new insights into the use of organic dielectrics and an improved understanding of trap-states and ion defect compensation for detectors based on perovskite heterostructures.
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Submitted 3 July, 2024;
originally announced July 2024.
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Stabilization of lead-free bulk CsSnI$_3$ perovskite thermoelectrics via incorporating of TiS$_3$ nanoribbon clusters
Authors:
Alexandra Ivanova,
Lev Luchnikov,
Margarita Golikova,
Dmitry S. Muratov,
Danila Saranin,
Aleksandra Khanina,
Pavel Gostishchev,
Vladimir Khovaylo
Abstract:
The intense research for efficient low-temperature thermoelectric materials motivates the exploration of innovative compounds and composite systems. This study examines the effects of integrating low-dimensional titanium trisulfide (TiS$_3$) into bulk tin-based halide perovskites (CsSnI$_3$) for use in thermoelectric applications. The addition of small amounts of two-dimensional titanium trisulfid…
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The intense research for efficient low-temperature thermoelectric materials motivates the exploration of innovative compounds and composite systems. This study examines the effects of integrating low-dimensional titanium trisulfide (TiS$_3$) into bulk tin-based halide perovskites (CsSnI$_3$) for use in thermoelectric applications. The addition of small amounts of two-dimensional titanium trisulfide (TiS$_3$) to bulk tin-based halide perovskites (CsSnI$_3$) significantly enhanced the structural stability of the composite material and suppressed oxidation processes. The CsSnI$_3$-TiS$_3$ composites demonstrated stabilization of temperature-dependent electrical properties (conductivity and Seebeck coefficient). This study provides valuable insights into the promising approach of using low-dimensional TiS3 as an additive to stabilize the thermoelectric performance of CsSnI$_3$.
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Submitted 14 May, 2024;
originally announced May 2024.
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Single-step Chemical Vapor Deposition of Methyl Ammonium Lead Halide Perovskite for p-i-n Solar Cells
Authors:
Dmitry S. Muratov,
Lev Luchnikov,
Danila Saranin,
Artur Ishteev,
Vladislav Kurichenko,
Evgeniy Kolesnikov,
Denis V. Kuznetsov,
Aldo Di Carlo
Abstract:
Metal halide perovskite solar cells being one of the fastest emerging technologies for renewable energy still has to become more industry friendly in a way that will allow using it for thin film modules or tandems with conventional silicon devices. The simplest way to achieve this is to use chemical vapor deposition (CVD) technique for tandem production. In this work, we show a method for a single…
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Metal halide perovskite solar cells being one of the fastest emerging technologies for renewable energy still has to become more industry friendly in a way that will allow using it for thin film modules or tandems with conventional silicon devices. The simplest way to achieve this is to use chemical vapor deposition (CVD) technique for tandem production. In this work, we show a method for a single step production of MAPbI3 films in a simple two-zone CVD reactor from lead diacetate and methyl-ammonium iodide powders. Obtained films show highly ordered cubic MAPbI3 phase with a thickness of 400-500 um, good photoluminescence response and absorption band edge similar to spin-coated film. We used those films to produce p-i-n solar cells with ITO/NiO/MAPbI3/C60/Cu structure. The best cell showed negligible 0.23 % PCE right after the manufacturing but significantly improved to 5.5 % PCE after 8 hours of storage in the dark. The main limiting factor affecting the efficiency is low current density, which we attribute to non-optimized growth conditions; however, our approach is a first step to a single step CVD deposition of MAPbI3 on any type of substrates including texturized silicon subcells for better overall efficiency.
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Submitted 11 December, 2023;
originally announced December 2023.
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Triphenylamine-based interlayer with carboxyl anchoring group for tuning of charge collection interface in stabilized p-i-n perovskite solar cells and modules
Authors:
P. K. Sukhorukova,
E. A. Ilicheva,
P. A. Gostishchev,
L. O. Luchnikov,
M. M. Tepliakova,
D. O. Balakirev,
I. V. Dyadishchev,
A. A. Vasilev,
D. S. Muratov,
Yu. N. Luponosov,
A. Di Carlo,
D. S. Saranin
Abstract:
A novel triphenylamine-based hole transport material (HTM) with a carboxyl anchoring group (TPATC) was developed for tuning the interface between nanocrystalline NiO and double cation CsCH3(NH2)2PbI3-xClx absorber in p-i-n device architectures. We present a unique comprehensive confinement study of PSCs with TPATC as the self-assembled HTM, including analysis of numerical defect parameters, phase…
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A novel triphenylamine-based hole transport material (HTM) with a carboxyl anchoring group (TPATC) was developed for tuning the interface between nanocrystalline NiO and double cation CsCH3(NH2)2PbI3-xClx absorber in p-i-n device architectures. We present a unique comprehensive confinement study of PSCs with TPATC as the self-assembled HTM, including analysis of numerical defect parameters, phase composition evolution, and up-scaling capabilities. Our investigation shows that the ultrathin TPATC interlayer effectively passivates traps, increases work-function of HTL by about ~0.2 eV, and enhances the charge carrier extraction efficiency. Advanced transient spectroscopy measurements revealed that modification of the NiO surface with TPATC in perovskite solar cells (PSCs) reduces the concentration of ionic defects by an order of magnitude. Interface engineering with TPATC allowed to reach power conversion efficiency of 20.58% for small area devices (0.15 cm2) under standard AM 1.5 G conditions. Using TPATC interlayer also provided stabilized performance of PSCs under operation conditions and improved sustainability of the perovskite absorber to decomposition. After continuous light-soaking (1000 h, ISOS-L-2 protocol), NiO/TPATC devices showed a slight decrease of 2% in maximum power. In contrast, NiO PSCs demonstrated decrease in power output (>20%) after 400 h. We explored the potential of TPATC to modify interfaces in large-area perovskite solar modules (PSM, active area-64.8 cm2, 12 sub-cells). By applying slot-die-coated TPATC, the PCE at AM 1.5 G conditions increased from 13.22% for NiO PSM to 15.64% for NiO/TPATC ones. This study provides new insights into the interface engineering for p-i-n perovskite solar cells, behavior of the ionic defects and their contribution to the long-term stability.
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Submitted 22 November, 2023;
originally announced November 2023.
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Photo Stabilization of p-i-n Perovskite Solar Cells with Bathocuproine: MXene
Authors:
Anastasia Yusheva,
Danila Saranin,
Dmitry Muratov,
Pavel Gostishchev,
Hanna Pazniak,
Alessia Di Vito,
Son Thai Le,
Lev Luchnikov,
Anton Vasiliev,
Dmitry Podgorny,
Denis Kuznetsov,
Sergey Didenko,
Aldo Di Carlo
Abstract:
Interface engineering is one of the promising strategies for the long-term stabilization of perovskite solar cells, preventing chemical decomposition induced by external agents and promoting fast charge transfer. Recently, MXenes-2D structured transition metal carbides and nitrides with various functionalization (=O,-F,-OH) demonstrated high potential for mastering the work function in halide pero…
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Interface engineering is one of the promising strategies for the long-term stabilization of perovskite solar cells, preventing chemical decomposition induced by external agents and promoting fast charge transfer. Recently, MXenes-2D structured transition metal carbides and nitrides with various functionalization (=O,-F,-OH) demonstrated high potential for mastering the work function in halide perovskite absorbers and significantly improved the n-type charge collection in solar cells. This work demonstrates that MXenes allow for efficient stabilization of perovskite solar cells besides improving their performances. We introduce a new mixed composite bathocuproine:MXene, i.e., (BCP:MXene) interlayer at the interface between an electron-transport layer (ETL) and a metal cathode in the p-in device structure. Our investigation demonstrates that the use of BCP:MXene interlayer slightly increases the power conversation efficiency (PCE) for PSCs (from 16.5 for reference to 17.5%) but dramatically improves the out of Glove-Box stability. Under ISOS-L-2 light soaking stress at 63$\pm$ 1.5{\textdegree}C, The T80 (time needed to reduce efficiency down to 80% of the initial one) period increased from 460 h to > 2300 h.
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Submitted 16 November, 2023;
originally announced November 2023.
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Ion-beam sputtering of NiO hole transporting layers for p-i-n halide perovskite solar cells
Authors:
P. Gostishchev,
L. O. Luchnikov,
O. Bronnikov,
V. Kurichenko,
D. S. Muratov,
A. A. Aleksandrov,
A. R. Tameev,
M. P. Tyukhova,
S. Le Badurin. I. V.,
Ryabtseva M. V.,
D. Saranin,
A. Di Carlo
Abstract:
Ion-beam sputtering offers significant benefits in terms of deposition uniformity and pinhole-free thin-films without limiting the scalability of the process. In this work, the reactive ion-beam sputtering of nickel oxide has been developed for the hole transporting layer of a p-i-n perovskite solar cells (PCSs). The process is carried out by oxidation of the scattered Ni particles with additional…
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Ion-beam sputtering offers significant benefits in terms of deposition uniformity and pinhole-free thin-films without limiting the scalability of the process. In this work, the reactive ion-beam sputtering of nickel oxide has been developed for the hole transporting layer of a p-i-n perovskite solar cells (PCSs). The process is carried out by oxidation of the scattered Ni particles with additional post-treatment annealing regimes. Using deposition rate of 1.2 nm/min allowed growth of very uniform NiO coating with the roughness below 0.5 nm on polished Si wafer (15x15 cm2). We performed a complex investigation of structural, optical, surface and electrical properties of the NiO thin-films. The post-treatment annealing (150-300C) was considered as an essential process for improvement of the optical transparency, decrease of defects concentration and gain of the charge carrier mobility. As result, the annealed ion-beam sputtered NiO films delivered a power conversion efficiency (PCE) up to 20.14%, while device without post-treatment reached the value of 11.84%. The improvement of the output performance originated from an increase of the short-circuit current density (Jsc), open circuit voltage (Voc), shunt and contact properties in the devices. We also demonstrate that the ion-beam sputtering of NiO can be successfully implemented for the fabrication of large area modules (54.5 cm2) and PSCs on a flexible plastic substrate (125 microns).
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Submitted 29 June, 2023;
originally announced June 2023.
