Showing 1–45 of 45 results for author: Lu, W J

X-Type Antiferromagnets

Authors: Shui-Sen Zhang, Zi-An Wang, Bo Li, Shu-Hui Zhang, Rui-Chun Xiao, Lan-Xin Liu, X. Luo, W. J. Lu, Mingliang Tian, Y. P. Sun, Evgeny Y. Tsymbal, Haifeng Du, Ding-Fu Shao

Abstract: Magnetically ordered materials reveal various types of magnetic moment alignment that affects their functional properties. This makes the exploration of unconventional magnetic orderings promising for the discovery of new physical phenomena and spintronic applications. Here, we introduce cross-chain antiferromagnets, dubbed X-type antiferromagnets, as an uncharted class of magnetically ordered cry… ▽ More Magnetically ordered materials reveal various types of magnetic moment alignment that affects their functional properties. This makes the exploration of unconventional magnetic orderings promising for the discovery of new physical phenomena and spintronic applications. Here, we introduce cross-chain antiferromagnets, dubbed X-type antiferromagnets, as an uncharted class of magnetically ordered crystals, where the stacking of two magnetic sublattices form an orthogonal pattern of intersecting atomic chains. These largely unexplored X-type antiferromagnets reveal unique spin-dependent transport properties that are not present in conventional magnets. Using $β$-Fe2PO5 as a representative example of such X-type antiferromagnets, we predict the emergence of sublattice-selective spin-polarized transport, where one magnetic sublattice is conducting, while the other is not. As a result, spin torque can be exerted solely on a single sublattice, leading to unconventional ultrafast dynamics of the Nèel vector capable of deterministic switching of the antiferromagnetic domains. Our work uncovers a previously overlooked type of magnetic moment alignment in antiferromagnets and reveals sublattice-selective physical properties promising for high-performance spintronic applications. △ Less

Submitted 20 October, 2023; originally announced October 2023.

Prediction of Giant Tunneling Magnetoresistance in RuO$_{2}$/TiO$_{2}$/RuO$_{2}$ (110) Antiferromagnetic Tunnel Junctions

Authors: Yuan-Yuan Jiang, Zi-An Wang, Kartik Samanta, Shu-Hui Zhang, Rui-Chun Xiao, W. J. Lu, Y. P. Sun, Evgeny Y. Tsymbal, Ding-Fu Shao

Abstract: Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$ electrodes and an insulating TiO$_{2}$ tunneling barrier. We predict the emergence of a giant tunneling magnetoresistance (TMR) effect in a wide energy window, a… ▽ More Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$ electrodes and an insulating TiO$_{2}$ tunneling barrier. We predict the emergence of a giant tunneling magnetoresistance (TMR) effect in a wide energy window, a series of barrier layer thicknesses, and different interface terminations, indicating the robustness of this effect. We show that the predicted TMR cannot be explained in terms of the global transport spin-polarization of RuO$_{2}$ (110) but is well understood based on matching the momentum-dependent spin-polarized conduction channels of the two RuO$_{2}$ (110) electrodes. We predict oscillations of TMR with increasing barrier thickness, indicating a non-negligible contribution from the perfectly epitaxial interfaces. Our work helps the understanding of the physics of TMR in AFMTJs and aids in realizing efficient AFM spintronic devices. △ Less

Submitted 8 November, 2023; v1 submitted 5 September, 2023; originally announced September 2023.

Comments: The colorbar of originl Fig. 2a was not set properly, which is corrected in this version. To be published in PRB

Néel Spin Currents in Antiferromagnets

Authors: Ding-Fu Shao, Yuan-Yuan Jiang, Jun Ding, Shu-Hui Zhang, Zi-An Wang, Rui-Chun Xiao, Gautam Gurung, W. J. Lu, Y. P. Sun, Evgeny Y. Tsymbal

Abstract: Ferromagnets are known to support spin-polarized currents that control various spin-dependent transport phenomena useful for spintronics. On the contrary, fully compensated antiferromagnets are expected to support only globally spin-neutral currents. Here, we demonstrate that these globally spin-neutral currents can represent the Néel spin currents, i.e. staggered spin currents flowing through dif… ▽ More Ferromagnets are known to support spin-polarized currents that control various spin-dependent transport phenomena useful for spintronics. On the contrary, fully compensated antiferromagnets are expected to support only globally spin-neutral currents. Here, we demonstrate that these globally spin-neutral currents can represent the Néel spin currents, i.e. staggered spin currents flowing through different magnetic sublattices. The Néel spin currents emerge in antiferromagnets with strong intra-sublattice coupling (hop**) and drive the spin-dependent transport phenomena such as tunneling magnetoresistance (TMR) and spin-transfer torque (STT) in antiferromagnetic tunnel junctions (AFMTJs). Using RuO$_{2}$ and Fe$_{4}$GeTe$_{2}$ as representative antiferromagnets, we predict that the Néel spin currents with a strong staggered spin-polarization produce a sizable field-like STT capable of the deterministic switching of the Néel vector in the associated AFMTJs. Our work uncovers the previously unexplored potential of fully compensated antiferromagnets and paves a new route to realize the efficient writing and reading of information for antiferromagnetic spintronics. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Journal ref: Phys. Rev. Lett. 130, 216702 (2023)

Spin-Neutral Tunneling Anomalous Hall Effect

Authors: Ding-Fu Shao, Shu-Hui Zhang, Rui-Chun Xiao, Zi-An Wang, W. J. Lu, Y. P. Sun, Evgeny Y. Tsymbal

Abstract: Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polarization are required to drive the AHE. Here we demonstrate that, in contrast to this common expectation, a spin-neutral tunneling AHE (TAHE), i.e. a TAHE driven by spin-neutral currents, can be realized in an antiferromagne… ▽ More Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polarization are required to drive the AHE. Here we demonstrate that, in contrast to this common expectation, a spin-neutral tunneling AHE (TAHE), i.e. a TAHE driven by spin-neutral currents, can be realized in an antiferromagnetic (AFM) tunnel junction where an AFM electrode with a non-spin-degenerate Fermi surface and a normal metal electrode are separated by a non-magnetic barrier with strong spin-orbit coupling (SOC). The symmetry mismatch between the AFM electrode and the SOC barrier results in an asymmetric spin-dependent momentum filtering of the spin-neutral longitudinal current generating the transverse Hall current in each electrode. We predict a sizable spin-neutral TAHE in an AFM tunnel junction with a RuO$_{2}$-type AFM electrode and a SnTe-type SOC barrier and show that the Hall currents are reversible by the Néel vector switching. With the Hall angle being comparable to that in conventional AHE bulk materials, the predicted spin-neutral TAHE can be used for the Néel vector detection in antiferromagnetic spintronics. △ Less

Submitted 27 July, 2022; originally announced July 2022.

Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$

Authors: J. Yan, Z. Z. Jiang, R. C. Xiao, W. J. Lu, W. H. Song, X. B. Zhu, X. Luo, Y. P. Sun, M. Yamashita

Abstract: The magnetic topological materials have attracted significant attention due to their potential realization of variety of novel quantum phenomena. EuIn$_2$As$_2$ has recently been theoretically recognized as a long awaited intrinsic antiferromagnetic bulk axion insulator. However, the experimental study on transport properties arising from the topological states in this material is scarce. In this… ▽ More The magnetic topological materials have attracted significant attention due to their potential realization of variety of novel quantum phenomena. EuIn$_2$As$_2$ has recently been theoretically recognized as a long awaited intrinsic antiferromagnetic bulk axion insulator. However, the experimental study on transport properties arising from the topological states in this material is scarce. In this paper, we perform the detailed magnetoresistance (MR) and Hall measurements to study the magnetotransport properties of this material. We find that the transport is strongly influenced by the spin configuration of the Eu moments from the concomitant change in the field dependence of the MR and that of the magnetization below the Néel temperature. Most importantly, an anomalous Hall effect (AHE) and a large topological Hall effect (THE) are observed. We suggest that the AHE is originated from a nonvanishing net Berry curvature due to the helical spin structure and that the THE is attributed to the formation of a noncoplanar spin texture with a finite scalar spin chirality induced by the external magnetic field in EuIn$_2$As$_2$. Our studies provide a platform to understand the influence of the interplay between the topology of electronic bands and the field-induced magnetic structure on magnetoelectric transport properties. In addition, our observations give a hint to realize axion insulator states and high-order topological insulator states through manipulating the magnetic state of EuIn$_2$As$_2$. △ Less

Submitted 2 February, 2022; originally announced February 2022.

Comments: 7 pages, 4 figures, accepted by Physical Review Reaseach

Journal ref: Phys. Rev. Research 4, 013163 (2022)

Chiral charge density waves induced by Ti-do** in 1T-TaS2

Authors: J. J. Gao, W. H. Zhang, J. G. Si, X. Luo, J. Yan, Z. Z. Jiang, W. Wang, H. Y. Lv, P. Tong, W. H. Song, X. B. Zhu, W. J. Lu, Y. Yin, Y. P. Sun

Abstract: We investigate the Ti-do** effect on the charge density wave (CDW) of 1T-TaS2 by combining scanning tunneling microscopy (STM) measurements and first-principle calculations. Although the Ti-do** induced phase evolution seems regular with increasing of the do** concentration (x), an unexpected chiral CDW phase is observed in the sample with x = 0.08, in which Ti atoms almost fully occupy the… ▽ More We investigate the Ti-do** effect on the charge density wave (CDW) of 1T-TaS2 by combining scanning tunneling microscopy (STM) measurements and first-principle calculations. Although the Ti-do** induced phase evolution seems regular with increasing of the do** concentration (x), an unexpected chiral CDW phase is observed in the sample with x = 0.08, in which Ti atoms almost fully occupy the central Ta atoms in the CDW clusters. The emergence of the chiral CDW is proposed to be from the do**-enhanced orbital order. Only when x = 0.08, the possible long-range orbital order can trigger the chiral CDW phase. Compared with other 3d-elements doped 1T-TaS2, the Ti-do** retains the electronic flat band and the corresponding CDW phase, which is a prerequisite for the emergence of chirality. We expect that introducing elements with a strong orbital character may induce a chiral charge order in a broad class of CDW systems. The present results open up another avenue for further exploring the chiral CDW materials. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Comments: 12 pages, 4 figures

Journal ref: Applied Physics Letters 2021

Temperature-Induced Lifshitz Transition and Possible Excitonic Instability in ZrSiSe

Authors: F. C. Chen, Y. Fei, S. J. Li, Q. Wang, X. Luo, J. Yan, W. J. Lu, P. Tong, W. H. Song, X. B. Zhu, L. Zhang, H. B. Zhou, F. W. Zheng, P. Zhang, A. L. Lichtenstein, M. I. Katsnelson, Y. Yin, Ning Hao, Y. P. Sun

Abstract: The nodal-line semimetals have attracted immense interest due to the unique electronic structures such as the linear dispersion and the vanishing density of states as the Fermi energy approaching the nodes. Here, we report temperature-dependent transport and scanning tunneling microscope (spectroscopy) (STM[S]) measurements on nodal-line semimetal ZrSiSe.Our experimental results and theoretical an… ▽ More The nodal-line semimetals have attracted immense interest due to the unique electronic structures such as the linear dispersion and the vanishing density of states as the Fermi energy approaching the nodes. Here, we report temperature-dependent transport and scanning tunneling microscope (spectroscopy) (STM[S]) measurements on nodal-line semimetal ZrSiSe.Our experimental results and theoretical analyses consistently demonstrate that the temperature induces Lifshitz transitions at 80 and 106 K in ZrSiSe, which results in the transport anomalies at the same temperatures. More strikingly, we observe a V-shaped dip structure around Fermi energy from the STS spectrum at low temperature,which can be attributed to co-effect of the spin-orbit coupling and excitonic instability. Our observations indicate the correlation interaction may play an important role in ZrSiSe, which owns the quasi-two-dimensional electronic structures. △ Less

Submitted 15 June, 2020; originally announced June 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 124, 236601 (2020)

Superconducting and Topological Properties in Centrosymmetric PbTaS2 Single Crystals

Authors: J. J. Gao, J. G. Si, X. Luo, J. Yan, Z. Z. Jiang, W. Wang, C. Q. Xu, X. F. Xu, P. Tong, W. H. Song, X. B. Zhu, W. J. Lu, Y. P. Sun

Abstract: We report the superconductivity of PbTaS2 single crystals with the centrosymmetric structure. The systematic measurements of magnetization, electric transport and specific heat indicate that PbTaS2 is a weakly coupled type-II superconductor with transition temperature Tc = 2.6 K. Furthermore, the band structure calculations predicted four nodal lines near the Fermi energy with drumhead-like surfac… ▽ More We report the superconductivity of PbTaS2 single crystals with the centrosymmetric structure. The systematic measurements of magnetization, electric transport and specific heat indicate that PbTaS2 is a weakly coupled type-II superconductor with transition temperature Tc = 2.6 K. Furthermore, the band structure calculations predicted four nodal lines near the Fermi energy with drumhead-like surface states, suggesting centrosymmetric PbTaS2 is a candidate of topological nodal line semimetals. These results demonstrate that PbTaS2 may open up another avenue for further exploring the properties of superconductivity and topological nodal-line states. △ Less

Submitted 21 May, 2020; originally announced May 2020.

Comments: 21 pages, 3 figures, 1 table

Journal ref: JOURNAL OF PHYSICAL CHEMISTRY C 2020, 124, 11, 6349

Inversion symmetry breaking induced triply degenerate points in orderly arranged PtSeTe family materials

Authors: R. C. Xiao, C. H. Cheung, P. L. Gong, W. J. Lu, J. G. Si, Y. P. Sun

Abstract: $k$ paths exactly with $C_{3v}$ symmetry allow to find triply degenerate points (TDPs) in band structures. The paths that host the type-II Dirac points in PtSe$_2$ family materials also have the $C_{3v}… ▽ More $k$ paths exactly with $C_{3v}$ symmetry allow to find triply degenerate points (TDPs) in band structures. The paths that host the type-II Dirac points in PtSe$_2$ family materials also have the $C_{3v}$ spatial symmetry. However, due to Kramers degeneracy (the systems have both inversion symmetry and time reversal symmetry), the crossing points in them are Dirac ones. In this work, based on symmetry analysis, first-principles calculations, and $k\cdot p$ method, we predict that PtSe$_2$ family materials should undergo topological transitions if the inversion symmetry is broken, \emph{i.e.} the Dirac fermions in PtSe$_2$ family materials split into TDPs in PtSeTe family materials (PtSSe, PtSeTe, and PdSeTe) with orderly arranged S/Se (Se/Te). It is different from the case in high-energy physics that breaking inversion symmetry $I$ leads to the splitting of Dirac fermion into Weyl fermions. We also address a possible method to achieve the orderly arranged in PtSeTe family materials in experiments. Our study provides a real example that Dirac points transform into TDPs, and is helpful to investigate the topological transition between Dirac fermions and TDP fermions. △ Less

Submitted 3 March, 2018; originally announced March 2018.

Journal ref: J. Phys.: Condens, 2018

Critical behavior of two-dimensional intrinsically ferromagnetic semiconductor CrI3

Authors: G. T. Lin, X. Luo, F. C. Chen, J. Yan, J. J. Gao, Y. Sun, W. Tong, P. Tong, W. J. Lu, Z. G. Sheng, W. H. Song, X. B. Zhu, Y. P. Sun

Abstract: CrI3, which belongs to a rare category of two-dimensional (2D) ferromagnetic semiconductors, is of great interest for spintronic device applications. Unlike CrCl3 whose magnetism presents a 2D-Heisenberg behavior, CrI3 exhibits a larger van der Waals gap, smaller cleavage energy, and stronger magnetic anisotropy which could lead to a 3D magnetic characteristic. Hence, we investigate the critical b… ▽ More CrI3, which belongs to a rare category of two-dimensional (2D) ferromagnetic semiconductors, is of great interest for spintronic device applications. Unlike CrCl3 whose magnetism presents a 2D-Heisenberg behavior, CrI3 exhibits a larger van der Waals gap, smaller cleavage energy, and stronger magnetic anisotropy which could lead to a 3D magnetic characteristic. Hence, we investigate the critical behavior of CrI3 in the vicinity of magnetic transition. We use the modified Arrott plot and Kouvel-Fisher method, and conduct critical isotherm analysis to estimate the critical exponents near the ferromagnetic phase transition. This shows that the magnetism of CrI3 follows the crossover behavior of a 3D-Ising model with mean field type interactions where the critical exponents \b{eta}, γ, and δ are 0.323, 0.835, and 3.585, respectively, at the Curie temperature of 64 K. We propose the crossover behavior can be attributed to the strong uniaxial anisotropy and inevitable interlayer coupling. Our experiment demonstrates the applicability of crossover behavior to a 2D ferromagnetic semiconductor. △ Less

Submitted 30 January, 2018; originally announced January 2018.

Comments: Accepted by Appl. Phys. Lett

The origin of the turn-on phenomenon in Td-MoTe2

Authors: Q. L. Pei, W. J. Meng, X. Luo, H. Y. Lv, F. C. Chen, W. J. Lu, Y. Y. Han, P. Tong, W. H. Song, Y. B. Hou, Q. Y. Lu, Y. P. Sun

Abstract: We did the resistivity and scanning tunneling microscope/spectroscopy (STM/STS) experiments at different temperatures and magnetic fields to investigate the origin of the turn-on (t-o) phenomenon of Td-MoTe2. There are two interesting observations. Firstly, magnetoresistance (MR) follows the Kohler rule scaling: MR - (H/p0)m with m - 1.92 and the t-o temperature T under different magnetic fields c… ▽ More We did the resistivity and scanning tunneling microscope/spectroscopy (STM/STS) experiments at different temperatures and magnetic fields to investigate the origin of the turn-on (t-o) phenomenon of Td-MoTe2. There are two interesting observations. Firstly, magnetoresistance (MR) follows the Kohler rule scaling: MR - (H/p0)m with m - 1.92 and the t-o temperature T under different magnetic fields can also be scaled by T - (H-Hc)u with u = 1/2. Secondly, a combination of compensated electron-hole pockets and a possible electronic structure phase transition induced by the temperature have been validated in Td-MoTe2 by the STM/STS experiments. Compared with the STS of Td-MoTe2 single crystal under H = 0, the STS hardly changes even when the applied field is up to 7 T. The origins of the t-o phenomenon in Td-MoTe2 are discussed. Meanwhile, we analyzed the universality and applicability of the t-o phenomenon in the extreme MR materials with almost balanced hole and electron densities as well as with other systems where the density of hole or electron is in dominant position. △ Less

Submitted 9 July, 2017; originally announced July 2017.

Comments: Attepted by Phys. Rev. B

Manipulating charge-density-wave in monolayer $1T$-TiSe$_2$ by strain and charge do**: A first-principles investigation

Authors: M. J. Wei, W. J. Lu, R. C. Xiao, H. Y. Lv, P. Tong, W. H. Song, Y. P. Sun

Abstract: We investigate the effects of the in-plane biaxial strain and charge do** on the charge density wave (CDW) order of monolayer $1T$-TiSe$_2$ by using the first-principles calculations. Our results show that the tensile strain can significantly enhance the CDW order, while both compressive strain and charge do** (electrons and holes) suppress the CDW instability. The tensile strain may provide a… ▽ More We investigate the effects of the in-plane biaxial strain and charge do** on the charge density wave (CDW) order of monolayer $1T$-TiSe$_2$ by using the first-principles calculations. Our results show that the tensile strain can significantly enhance the CDW order, while both compressive strain and charge do** (electrons and holes) suppress the CDW instability. The tensile strain may provide an effective method for obtaining higher CDW transition temperature on the basis of monolayer $1T$-TiSe$_2$. We also discuss the potential superconductivity in charge-doped monolayer $1T$-TiSe$_2$. Controllable electronic phase transition from CDW state to metallic state or even superconducting state can be realized in monolayer $1T$-TiSe$_2$, which makes $1T$-TiSe$_2$ possess a promising application in controllable switching electronic devices based on CDW. △ Less

Submitted 20 June, 2017; originally announced June 2017.

Comments: 6 pages, 7 figures

Journal ref: Phys. Rev. B 96, 165404 (2017)

The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2

Authors: F. C. Chen, H. Y. Lv, X. Luo, W. J. Lu, Q. L. Pei, G. T. Lin, Y. Y. Han, X. B. Zhu, W. H. Song, Y. P. Sun

Abstract: We performed the angle dependent magnetoresistance (MR), Hall effect measurements, the temperature dependent magneto-thermoelectric power (TEP) S(T) measurements, and the first-principles calculations to study the electronic properties of orthorhombic phase MoTe2 (Td-MoTe2), which was proposed to be electronically two-dimensional (2D). There are some interesting findings about Td-MoTe2: (1) A scal… ▽ More We performed the angle dependent magnetoresistance (MR), Hall effect measurements, the temperature dependent magneto-thermoelectric power (TEP) S(T) measurements, and the first-principles calculations to study the electronic properties of orthorhombic phase MoTe2 (Td-MoTe2), which was proposed to be electronically two-dimensional (2D). There are some interesting findings about Td-MoTe2: (1) A scaling approach εθ=(sin2θ+γ-2cos2θ)1/2 is applied, where θ is the magnetic field angle with respect to the c axis of the crystal and γ is the mass anisotropy. Unexpectedly, the electronically 3D character with γ as low as 1.9 is observed in Td-MoTe2; (2) The possible Lifshitz transition and the following electronic structure change can be verified around T~150 K and T~60 K, which is supported by the evidence of the slop changing of the temperature dependence of TEP, the carrier density extracted from Hall resistivity and the onset temperature of γ obtained from the MR measurements. The extremely large MR effect in Td-MoTe2 could originate from the combination of the electron-hole compensation and a particular orbital texture on the electron pocket, which is supported by the calculations of electronic structure. Our results may provide a general scaling relation for the anisotropic MR and help to recognize the origins of the MR effect in other systems, such as the Weyl semimetals and the Dirac ones. △ Less

Submitted 11 June, 2017; originally announced June 2017.

Comments: Phys. Rev. B 94, 235154 (2016)

Tricritical behavior of two-dimensional intrinsic ferromagnetic semiconducting CrGeTe3

Authors: G. T. Lin, H. L. Zhuang, X. Luo, B. J. Liu, F. C. Chen, J. Yan, Y. Sun, J. Zhou, W. J. Lu, P. Tong, Z. G. Sheng, Z. Qu, W. H. Song, X. B. Zhu, Y. P. Sun

Abstract: CrGeTe3 recently emerges as a new two-dimensional (2D) ferromagnetic semiconductor that is promising for spintronic device applications. Unlike CrSiTe3 whose magnetism can be understood using the 2D-Ising model, CrGeTe3 exhibits a smaller van der Waals gap and larger cleavage energy, which could lead to a transition of magnetic mechanism from 2D to 3D. To confirm this speculation, we investigate t… ▽ More CrGeTe3 recently emerges as a new two-dimensional (2D) ferromagnetic semiconductor that is promising for spintronic device applications. Unlike CrSiTe3 whose magnetism can be understood using the 2D-Ising model, CrGeTe3 exhibits a smaller van der Waals gap and larger cleavage energy, which could lead to a transition of magnetic mechanism from 2D to 3D. To confirm this speculation, we investigate the critical behavior CrGeTe3 around the second-order paramagnetic-ferromagnetic phase transition. We obtain the critical exponents estimated by several common experimental techniques including the modified Arrott plot, Kouvel-Fisher method and critical isotherm analysis, which show that the magnetism of CrGeTe3 follows the tricritical mean-field model with the critical exponents \b{eta}, γ, and δ of 0.240, 1.000, and 5.070, respectively, at the Curie temperature of 67.9 K. We therefore suggest that the magnetic phase transition from 2D to 3D for CrGeTe3 should locate near a tricritical point. Our experiment provides a direct demonstration of the applicability of the tricritical mean-field model to a 2D ferromagnetic semiconductor. △ Less

Submitted 10 June, 2017; originally announced June 2017.

Comments: Accepted by Phys. Rev. B

Manipulation of type-I and type-II Dirac points in PdTe2 superconductor by external pressure

Authors: R. C. Xiao, P. L. Gong, Q. S. Wu, W. J. Lu, M. J. Wei, J. Y. Li, H. Y. Lv, X. Luo, P. Tong, X. B. Zhu, Y. P. Sun

Abstract: A pair of type-II Dirac cones in PdTe$_2$ was recently predicted by theories and confirmed in experiments, making PdTe$_2$ the first material that processes both superconductivity and type-II Dirac fermions. In this work, we study the evolution of Dirac cones in PdTe$_2$ under hydrostatic pressure by the first-principles calculations. Our results show that the pair of type-II Dirac points disappea… ▽ More A pair of type-II Dirac cones in PdTe$_2$ was recently predicted by theories and confirmed in experiments, making PdTe$_2$ the first material that processes both superconductivity and type-II Dirac fermions. In this work, we study the evolution of Dirac cones in PdTe$_2$ under hydrostatic pressure by the first-principles calculations. Our results show that the pair of type-II Dirac points disappears at 6.1 GPa. Interestingly, a new pair of type-I Dirac points from the same two bands emerges at 4.7 GPa. Due to the distinctive band structures compared with those of PtSe$_2$ and PtTe$_2$, the two types of Dirac points can coexist in PdTe$_2$ under proper pressure (4.7-6.1 GPa). The emergence of type-I Dirac cones and the disappearance of type-II Dirac ones are attributed to the increase/decrease of the energy of the states at $Γ$ and $A$ point, which have the anti-bonding/bonding characters of interlayer Te-Te atoms. On the other hand, we find that the superconductivity of PdTe$_2$ slightly decreases with pressure. The pressure-induced different types of Dirac cones combined with superconductivity may open a promising way to investigate the complex interactions between Dirac fermions and superconducting quasi-particles. △ Less

Submitted 26 July, 2017; v1 submitted 16 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. B 96, 075101 (2017)

Edge-controlled half-metallic ferromagnetism and direct gap in ZrS2 nanoribbons

Authors: H. Y. Lv, W. J. Lu, J. Y. Li, R. C. Xiao, M. J. Wei, P. Tong, X. B. Zhu, Y. P. Sun

Abstract: The electronic and magnetic properties of ZrS2 nanoribbons (NRs) are investigated based on the first-principles calculations. It is found that the ZrS2 NRs with armchair edges are all indirect-band-gap semiconductors without magnetism and the band-gap exhibits odd-even oscillation behavior with the increase of the ribbon width. For the NRs with zigzag edges, those with both edges S-terminated are… ▽ More The electronic and magnetic properties of ZrS2 nanoribbons (NRs) are investigated based on the first-principles calculations. It is found that the ZrS2 NRs with armchair edges are all indirect-band-gap semiconductors without magnetism and the band-gap exhibits odd-even oscillation behavior with the increase of the ribbon width. For the NRs with zigzag edges, those with both edges S-terminated are nonmagnetic direct-band-gap semiconductors and the gap decreases monotonically as a function of the ribbon width. However, the NRs with one edge S-terminated and the other edge Zr-terminated are ferromagnetic half-metal, while those with both edges Zr-terminated tend to be ferromagnetic half-metal when the width $N\geq9$. The magnetism of both systems mainly originates from the unsaturated edge Zr atoms. Depending on the different edge configurations and ribbon widths, the ZrS2 NRs exhibit versatile electronic and magnetic properties, making them promising candidates for the applications of electronics and spintronics. △ Less

Submitted 27 April, 2017; originally announced April 2017.

Journal ref: RSC Adv. 7, 33408 (2017)

Manipulating superconductivity of $1T$-TiTe$_2$ by high pressure

Authors: R. C. Xiao, W. J. Lu, D. F. Shao, J. Y. Li, M. J. Wei, H. Y. Lv, P. Tong, X. B. Zhu, Y. P. Sun

Abstract: Superconductivity of transition metal dichalcogenide $1T$-TiTe$_2$ under high pressure was investigated by the first-principles calculations. Our results show that the superconductivity of $1T$-TiTe$_2$ exhibits very different behavior under the hydrostatic and uniaxial pressure. The hydrostatic pressure is harmful to the superconductivity, while the uniaxial pressure is beneficial to the supercon… ▽ More Superconductivity of transition metal dichalcogenide $1T$-TiTe$_2$ under high pressure was investigated by the first-principles calculations. Our results show that the superconductivity of $1T$-TiTe$_2$ exhibits very different behavior under the hydrostatic and uniaxial pressure. The hydrostatic pressure is harmful to the superconductivity, while the uniaxial pressure is beneficial to the superconductivity. Superconducting transition temperature $T_C$ at ambient pressure is 0.73 K, and it reduces monotonously under the hydrostatic pressure to 0.32 K at 30 GPa. While the $T_C$ increases dramatically under the uniaxial pressure along $c$ axis. The established $T_C$ of 6.34 K under the uniaxial pressure of 17 GPa, below which the structural stability maintains, is above the liquid helium temperature of 4.2 K. The increase of density of states at Fermi level, the redshift of $F(ω)$/$α^2F(ω)$ and the softening of the acoustic modes with pressure are considered as the main reasons that lead to the enhanced superconductivity under uniaxial pressure. In view of the previously predicted topological phase transitions of $1T$-TiTe$_2$ under the uniaxial pressure [Phys. Rev. B 88, 155317 (2013)], we consider $1T$-TiTe$_2$ as a possible candidate in transition metal chalcogenides for exploring topological superconductivity. △ Less

Submitted 14 January, 2017; v1 submitted 7 January, 2017; originally announced January 2017.

Enhancing the thermoelectric performance of a HfS2 monolayer through valley engineering

Authors: H. Y. Lv, W. J. Lu, X. Luo, H. Y. Lu, X. B. Zhu, Y. P. Sun

Abstract: The electronic, phonon, and thermoelectric properties of a two-dimensional HfS2 monolayer are investigated by using the first-principles calculations combined with the Boltzmann transport theory. The band valleys of the HfS2 monolayer can be effectively tuned by the applied biaxial strain. The Seebeck coefficient and therefore the peak value of the power factor (with the relaxation time inserted)… ▽ More The electronic, phonon, and thermoelectric properties of a two-dimensional HfS2 monolayer are investigated by using the first-principles calculations combined with the Boltzmann transport theory. The band valleys of the HfS2 monolayer can be effectively tuned by the applied biaxial strain. The Seebeck coefficient and therefore the peak value of the power factor (with the relaxation time inserted) increase when the degeneracy of the band valleys is increased by the strain. When no strain is applied, the HfS2 monolayer is an excellent n-type thermoelectric material, while the thermoelectric performance of the p-type doped one is poor. The applied tensile strain of 6% can increase the room-temperature ZT value of the p-type doped system to 3.67, which is five times larger than that of the unstrained one. The much more balanced ZT values of the p- and n-type do** are favorable for fabrication of both p- and n-legs of thermoelectric modules. Our results indicate that the thermoelectric performance of the HfS2 monolayer can be greatly improved by the valley engineering through the method of strain. △ Less

Submitted 18 August, 2016; originally announced August 2016.

Enhanced superconductivity by strain and carrier-do** in borophene: A first principles prediction

Authors: R. C. Xiao, D. F. Shao, W. J. Lu, H. Y. Lv, J. Y. Li, Y. P. Sun

Abstract: We predict by first principles calculations that the recently prepared borophene is a pristine two-dimensional (2D) monolayer superconductor, in which the superconductivity can be significantly enhanced by strain and charge carrier do**. The intrinsic metallic ground state with high density of states at Fermi energy and strong Fermi surface nesting lead to sizeable electron-phonon coupling, maki… ▽ More We predict by first principles calculations that the recently prepared borophene is a pristine two-dimensional (2D) monolayer superconductor, in which the superconductivity can be significantly enhanced by strain and charge carrier do**. The intrinsic metallic ground state with high density of states at Fermi energy and strong Fermi surface nesting lead to sizeable electron-phonon coupling, making the freestanding borophene superconduct with $T_c$ close to 19.0 K. The tensile strain can increase $T_c$ to 27.4 K, while the hole do** can notably increase $T_c$ to 34.8 K. The results indicate that the borophene grown on substrates with large lattice parameters or under photoexcitation can show enhanced superconductivity with $T_c$ far more above liquid hydrogen temperature of 20.3 K, which will largely broaden the applications of such novel material. △ Less

Submitted 21 April, 2016; originally announced April 2016.

Journal ref: Appl. Phys. Lett. 109, 122604 (2016)

Strain-induced enhancement of thermoelectric performance in a ZrS2 monolayer

Authors: H. Y. Lv, W. J. Lu, D. F. Shao, H. Y. Lu, Y. P. Sun

Abstract: The increase of a thermoelectric material's figure of merit (ZT value) is limited by the interplay of the transport coefficients. Here we report the greatly enhanced thermoelectric performance of a ZrS2 monolayer by the biaxial tensile strain, due to the simultaneous increase of the Seebeck coefficient and decrease of the thermal conductivity. Based on the first-principles calculations combined wi… ▽ More The increase of a thermoelectric material's figure of merit (ZT value) is limited by the interplay of the transport coefficients. Here we report the greatly enhanced thermoelectric performance of a ZrS2 monolayer by the biaxial tensile strain, due to the simultaneous increase of the Seebeck coefficient and decrease of the thermal conductivity. Based on the first-principles calculations combined with the Boltzmann transport theory, we predict the band gap of the ZrS2 monolayer can be effectively engineered by the strain and the Seebeck coefficient is significantly increased. The thermal conductivity is reduced by the applied tensile strain due to the phonon softening. At the strain of 6%, the maximal ZT value of 2.4 is obtained for the p-type doped ZrS2 monolayer at 300 K, which is 4.3 times larger than that of the unstrained system. △ Less

Submitted 2 March, 2016; v1 submitted 27 February, 2016; originally announced February 2016.

Journal ref: J. Mater. Chem. C 4, 4538 (2016)

Spin dynamics, electronic and thermal transport properties of two-dimensional CrPS4 single crystal

Authors: Q. L. Pei, X. Luo, G. T. Lin, J. Y. Song, L. Hu, Y. M. Zou, L. Yu, W. Tong, W. H. Song, W. J. Lu, Y. P. Sun

Abstract: 2-Dimensional (2D) CrPS4 single crystals have been grown by the chemical vapor transport method. The crystallographic, magnetic, electronic and thermal transport properties of the single crystals were investigated by the room-temperature X-ray diffraction, electrical resistivity \r{ho}(T), specific heat CP(T) and the electronic spin response (ESR) measurements. CrPS4 crystals crystallize into a mo… ▽ More 2-Dimensional (2D) CrPS4 single crystals have been grown by the chemical vapor transport method. The crystallographic, magnetic, electronic and thermal transport properties of the single crystals were investigated by the room-temperature X-ray diffraction, electrical resistivity \r{ho}(T), specific heat CP(T) and the electronic spin response (ESR) measurements. CrPS4 crystals crystallize into a monoclinic structure. The electrical resistivity \r{ho}(T) shows a semiconducting behavior with an energy gap Ea=0.166 eV. The antiferromagntic (AFM) transition temperature is about TN=36 K. The spin flip** induced by the applied magnetic field is observed along the c axis. The magnetic phase diagram of CrPS4 single crystal has been discussed. The extracted magnetic entropy at TN is about 10.8 J/mol K, which is consistent with the theoretical value R ln(2S + 1) for S = 3/2 of the Cr3+ ion. Based on the mean-field theory, the magnetic exchange constants J1 and Jc corresponding to the interactions of the intralayer and between layers are about 0.143 meV and -0.955 meV are obtained based on the fitting of the susceptibility above TN, which agree with the results obtained from the ESR measurements. With the help of the strain for tuning the magnetic properties, monolayer CrPS4 may be a promising candidate to explore 2D magnetic semiconductors. △ Less

Submitted 25 February, 2016; originally announced February 2016.

Journal ref: J. Appl. Phys. 119, 043902 (2016)

Nature of charge density waves and superconductivity in 1\emph{T}-TaSe$_{2-x}$Te$_x$

Authors: Y. Liu, D. F. Shao, L. J. Li, W. J. Lu, X. D. Zhu, P. Tong, R. C. Xiao, L. S. Ling, C. Y. Xi, L. Pi, H. F. Tian, H. X. Yang, J. Q. Li, W. H. Song, X. B. Zhu, Y. P. Sun

Abstract: Transition-metal dichalcogenides (TMDs) $MX_2$ ($M$ = Ti, Nb, Ta; $X$ = S, Se, Te) exhibit a rich set of charge density wave (CDW) orders, which usually coexist and/or compete with superconductivity. The mechanisms of CDWs and superconductivity in TMDs are still under debate. Here we perform an investigation on a typical TMD system, 1\emph{T}-TaSe$_{2-x}$Te$_x$ ($0 \leq x \leq 2$). Do**-induced… ▽ More Transition-metal dichalcogenides (TMDs) $MX_2$ ($M$ = Ti, Nb, Ta; $X$ = S, Se, Te) exhibit a rich set of charge density wave (CDW) orders, which usually coexist and/or compete with superconductivity. The mechanisms of CDWs and superconductivity in TMDs are still under debate. Here we perform an investigation on a typical TMD system, 1\emph{T}-TaSe$_{2-x}$Te$_x$ ($0 \leq x \leq 2$). Do**-induced disordered distribution of Se/Te suppresses CDWs in 1\emph{T}-TaSe$_2$. A domelike superconducting phase with the maximum $T_\textrm{c}^{\textrm{onset}}$ of 2.5 K was observed near CDWs. The superconducting volume is very small inside the CDW phase and becomes very large instantly when the CDW phase is fully suppressed. The observations can be understood based on the strong \emph{\textbf{q}}-dependent electron-phonon coupling-induced periodic-lattice-distortion (PLD) mechanism of CDWs. The volume variation of superconductivity implies the emergence of domain walls in the suppressing process of CDWs. Our concluded scenario makes a fundamental understanding about CDWs and related superconductivity in TMDs. △ Less

Submitted 21 July, 2016; v1 submitted 25 February, 2016; originally announced February 2016.

Journal ref: Phys. Rev. B 94, 045131 (2016)

1T`-MoTe2 single crystal: a possible topological superconductor

Authors: X. Luo, F. C. Chen, J. L. Zhang, Q. L. Pei, G. T. Lin, W. J. Lu, Y. Y. Han, C. Y. Xi, W. H. Song, Y. P. Sun

Abstract: We measured the magnetoresistvity (MR) properties of the 1T`-MoTe2 single crystal under the magnetic field up to 33 T.By analyzing the Shubnikov de Haas oscillations of MR at the low temperature, single Fermi surface is revealed.From the strong oscillatory component of the longitudinal resistance ΔRxx,a linear dependence of the Landau index n on 1/B is obtained.The intercept of the Landau index pl… ▽ More We measured the magnetoresistvity (MR) properties of the 1T`-MoTe2 single crystal under the magnetic field up to 33 T.By analyzing the Shubnikov de Haas oscillations of MR at the low temperature, single Fermi surface is revealed.From the strong oscillatory component of the longitudinal resistance ΔRxx,a linear dependence of the Landau index n on 1/B is obtained.The intercept of the Landau index plot is between 3/8 and 1/2.This clearly reveals a nontrivial π Berry`s phase, which is a distinguished feature of Dirac fermions. Accompanied by the superconductivity observed at TC=0.1 K, 1T`-MoTe2 may be a promising candidate of the topological superconductor. △ Less

Submitted 3 February, 2016; originally announced February 2016.

Superconductivity enhancement in the S-doped Weyl semimetal candidate MoTe2

Authors: F. C. Chen, X. Luo, R. C. Xiao, W. J. Lu, B. Zhang, H. X. Yang, J. Q. Li, Q. L. Pei, D. F. Shao, R. R. Zhang, L. S. Ling, C. Y. Xi, W. H. Song, Y. P. Sun

Abstract: Two-dimensional (2D) transition-metal dichalcogenide (TMDs) MoTe2 has attracted much attention due to its predicted Weyl semimetal (WSM) state and a quantum spin Hall insulator in bulk and monolayer form, respectively. We find that the superconductivity in MoTe2 single crystal can be much enhanced by the partial substitution of the Te ions by the S ones. The maximum of the superconducting temperat… ▽ More Two-dimensional (2D) transition-metal dichalcogenide (TMDs) MoTe2 has attracted much attention due to its predicted Weyl semimetal (WSM) state and a quantum spin Hall insulator in bulk and monolayer form, respectively. We find that the superconductivity in MoTe2 single crystal can be much enhanced by the partial substitution of the Te ions by the S ones. The maximum of the superconducting temperature TC of MoTe1.8S0.2 single crystal is about 1.3 K. Compared with the parent MoTe2 single crystal (TC=0.1 K), nearly 13-fold in TC is improved in MoTe1.8S0.2 one. The superconductivity has been investigated by the resistivity and magnetization measurements. MoTe2-xSx single crystals belong to weak coupling superconductors and the improvement of the superconductivity may be related to the enhanced electron-phonon coupling induced by the S-ion substitution. A dome-shape superconducting phase diagram is obtained in the S-doped MoTe2 single crystals. MoTe2-xSx materials may provide a new platform for our understanding of superconductivity phenomena and topological physics in TMDs. △ Less

Submitted 28 December, 2015; v1 submitted 27 December, 2015; originally announced December 2015.

Comments: the "Author contributions" is updated

Manipulating charge-density-wave in $1T$-TaS$_{2}$ by charge carrier do**: A first-principles investigation

Authors: D. F. Shao, R. C. Xiao, W. J. Lu, H. Y. Lv, J. Y. Li, X. B. Zhu, Y. P. Sun

Abstract: The transition metal dichalcogenide (TMD) $1T$-TaS$_{2}$ exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such manipulations are considered to be determined by the charge carrier do**. Here we simulate by first-principles calculations the carrier do** effect on CCDW… ▽ More The transition metal dichalcogenide (TMD) $1T$-TaS$_{2}$ exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such manipulations are considered to be determined by the charge carrier do**. Here we simulate by first-principles calculations the carrier do** effect on CCDW in $1T$-TaS$_{2}$. We investigate the charge do** effects on the electronic structures and phonon instabilities of $1T$ structure and analyze the do** induced energy and distortion ratio variations in CCDW structure. We found that both in bulk and monolayer $1T$-TaS$_{2}$, CCDW is stable upon electron do**, while hole do** can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric field induced hole do** increases the energy of CCDW, so that the system transforms to NCCDW or similar metastable state. On the other hand, even the CCDW distortion is more stable upon in-plain electric field induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from CCDW to nearly commensurate (NC) CDW or similar metastable state. We also estimate that hole do** can introduce potential superconductivity with $T_{c}$ of $6\sim7$ K. Controllable switching of different states such as CCDW/Mott insulating state, metallic state, and even the superconducting state can be realized in $1T$-TaS$_{2}$, which makes the novel material have very promising applications in the future electronic devices. △ Less

Submitted 2 September, 2016; v1 submitted 21 December, 2015; originally announced December 2015.

Journal ref: Phys. Rev. B 94, 125126 (2016)

Superconductivity in CaSn3 single crystal with a AuCu3-type structure

Authors: X. Luo, D. F. Shao, Q. L. Pei, J. Y. Song, L. Hu, Y. Y. Han, X. B. Zhu, W. H. Song, W. J. Lu, Y. P. Sun

Abstract: We report the superconductivity of the CaSn3 single crystal with a AuCu3-type structure, namely cubic space group Pm3m. The superconducting transition temperature TC=4.2 K is determined by the magnetic susceptibility, electrical resistivity, and heat capacity measurements. The magnetization versus magnetic field (M-H) curve at low temperatures shows the typical-II superconducting behavior. The est… ▽ More We report the superconductivity of the CaSn3 single crystal with a AuCu3-type structure, namely cubic space group Pm3m. The superconducting transition temperature TC=4.2 K is determined by the magnetic susceptibility, electrical resistivity, and heat capacity measurements. The magnetization versus magnetic field (M-H) curve at low temperatures shows the typical-II superconducting behavior. The estimated lower and upper critical fields are about 125 Oe and 1.79 T, respectively. The penetration depth λ(0) and coherence length ξ(0) are calculated to be approximately 1147 nm and 136 nm by the Ginzburg-Landau equations. The estimated Sommerfeld coefficient of the normal state γ_N is about 2.9 mJ/mol K2. ΔC/γNTC =1.13 and λep=0.65 suggest that CaSn3 single crystal is a weakly coupled superconductor. Electronic band structure calculations show a complex multi-sheet Fermi surface formed by three bands and a low density of states (DOS) at the Fermi level, which is consistent with the experimental results. Based on the analysis of electron phonon coupling of AX3 compounds (A=Ca, La, and Y; X=Sn and Pb), we theoretically proposed a way to increase TC in the system. △ Less

Submitted 19 November, 2015; originally announced December 2015.

Journal ref: J. Mater. Chem. C,3, 11432 (2015)

Spin-orbit coupling enhanced superconductivity in Bi-rich compounds ABi$_{3}$ (A=Sr and Ba)

Authors: D. F. Shao, X. Luo, W. J. Lu, L. Hu, X. D. Zhu, W. H. Song, X. B. Zhu, Y. P. Sun

Abstract: Recently, Bi-based compounds have attracted attentions because of the strong spin-orbit coupling (SOC). In this work, we figured out the role of SOC in ABi$_{3}$ (A=Sr and Ba) by theoretical investigation of the band structures, phonon properties, and electron-phonon coupling. Without SOC, strong Fermi surface nesting leads to phonon instabilities in ABi$_{3}$. SOC suppresses the nesting and stabi… ▽ More Recently, Bi-based compounds have attracted attentions because of the strong spin-orbit coupling (SOC). In this work, we figured out the role of SOC in ABi$_{3}$ (A=Sr and Ba) by theoretical investigation of the band structures, phonon properties, and electron-phonon coupling. Without SOC, strong Fermi surface nesting leads to phonon instabilities in ABi$_{3}$. SOC suppresses the nesting and stabilizes the structure. Moreover, without SOC the calculation largely underestimates the superconducting transition temperatures ($T_{c}$), while with SOC the calculated $T_{c}$ are very close to those determined by measurements on single crystal samples. The SOC enhanced superconductivity in ABi$_{3}$ is due to not only the SOC induced phonon softening, but also the SOC related increase of electron-phonon coupling matrix elements. ABi$_{3}$ can be potential platforms to construct heterostructure of superconductor/topological insulator to realize topological superconductivity. △ Less

Submitted 19 October, 2015; originally announced October 2015.

Strain-controlled switch between ferromagnetism and antiferromagnetism in 1T-CrX2 (X = Se, Te) monolayers

Authors: H. Y. Lv, W. J. Lu, D. F. Shao, Y. Liu, Y. P. Sun

Abstract: We report on the strain-induced switch between ferromagnetic (FM) and antiferromagnetic (AFM) orderings in 1T-CrX2 (X = Se, Te) monolayers based on the first-principles calculations. The CrSe2 and CrTe2 monolayers without strains are found to be AFM and FM, respectively. Under the biaxial tensile strain, the CrSe2 monolayer tends to be FM when the strain is larger than 2%. The FM state is further… ▽ More We report on the strain-induced switch between ferromagnetic (FM) and antiferromagnetic (AFM) orderings in 1T-CrX2 (X = Se, Te) monolayers based on the first-principles calculations. The CrSe2 and CrTe2 monolayers without strains are found to be AFM and FM, respectively. Under the biaxial tensile strain, the CrSe2 monolayer tends to be FM when the strain is larger than 2%. The FM state is further stabilized when the strain is increased. Moreover, the CrSe2 monolayer changes to be half-metallic when the tensile strain is larger than 10%. While for the CrTe2 monolayer, the critical strain at which the transition between the FM and AFM states occurs is compressive, of -1%. Relatively small tensile strains of 4% and 2%, respectively, can enhance the Curie temperature of CrSe2 and CrTe2 monolayers above the room temperature. The strain-induced switch between the FM and AFM states in CrSe2 (CrTe2) monolayer can be understood by the competition between the AFM Cr-Cr direct exchange and FM Cr-Se(Te)-Cr superexchange interactions. The tunable and attractive magnetic and electronic properties controlled by the flexible strain are desirable for the future nanoelectronic applications. △ Less

Submitted 19 October, 2015; v1 submitted 24 September, 2015; originally announced September 2015.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B 92, 214419 (2015)

Ultrafast transmission electron microscopy on dynamic process of a CDW transition in 1T-TaSe2

Authors: Shuaishuai Sun, Linlin Wei, Zhongwen Li, Gaolong Cao, Y. Liu, W. J. Lu, Y. P. Sun, Huanfang Tian, HuaixinYang, Jianqi Li

Abstract: Four-dimensional ultrafast transmission electron microscopy (4D-UTEM) measurements reveal a rich variety of structural dynamic phenomena at a phase transition in the charge-density-wave (CDW) 1T-TaSe2. Through the photoexcitation, remarkable changes on both the CDW intensity and orientation are clearly observed associated with the transformation from a commensurate (C) into an incommensurate (IC)… ▽ More Four-dimensional ultrafast transmission electron microscopy (4D-UTEM) measurements reveal a rich variety of structural dynamic phenomena at a phase transition in the charge-density-wave (CDW) 1T-TaSe2. Through the photoexcitation, remarkable changes on both the CDW intensity and orientation are clearly observed associated with the transformation from a commensurate (C) into an incommensurate (IC) phase in a time-scale of about 3 ps. Moreover, the transient states show up a notable "structurally isosbestic point" at a wave vector of qiso where the C and IC phases yield their diffracting efficiencies in an equally ratio. This fact demonstrates that the crystal planes parallel to qiso adopts visibly common structural features in these two CDW phases. The second-order characters observed in this nonequilibrium phase transition have been also analyzed based on the time-resolved structural data. △ Less

Submitted 20 May, 2015; originally announced May 2015.

Comments: 16 pages, 4 figures

Journal ref: Phys. Rev. B 92, 224303 (2015)

Structure and Control of Charge Density Waves in Two-Dimensional 1T-TaS2

Authors: A. W. Tsen, R. Hovden, D. Z. Wang, Y. D. Kim, J. Okamoto, K. A. Spoth, Y. Liu, W. J. Lu, Y. P. Sun, J. Hone, L. F. Kourkoutis, P. Kim, A. N. Pasupathy

Abstract: The layered transition metal dichalcogenides host a rich collection of charge density wave (CDW) phases in which both the conduction electrons and the atomic structure display translational symmetry breaking. Manipulating these complex states by purely electronic methods has been a long-sought scientific and technological goal. Here, we show how this can be achieved in 1T-TaS2 in the two-dimension… ▽ More The layered transition metal dichalcogenides host a rich collection of charge density wave (CDW) phases in which both the conduction electrons and the atomic structure display translational symmetry breaking. Manipulating these complex states by purely electronic methods has been a long-sought scientific and technological goal. Here, we show how this can be achieved in 1T-TaS2 in the two-dimensional (2D) limit. We first demonstrate that the intrinsic properties of atomically-thin flakes are preserved by encapsulation with hexagonal boron nitride in inert atmosphere. We use this facile assembly method together with TEM and transport measurements to probe the nature of the 2D state and show that its conductance is dominated by discommensurations. The discommensuration structure can be precisely tuned in few-layer samples by an in-plane electric current, allowing continuous electrical control over the discommensuration-melting transition in 2D. △ Less

Submitted 14 May, 2015; originally announced May 2015.

Journal ref: Proceedings of the National Academy of Sciences 112, 15054-15059 (2015)

Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer

Authors: H. Y. Lv, W. J. Lu, D. F. Shao, Y. Liu, S. G. Tan, Y. P. Sun

Abstract: The electronic structure of WTe2 bulk and layers are investigated by using the first principles calculations. The perfect electron-hole (n-p) charge compensation and high carrier mobilities are found in WTe2 bulk, which may result in the large and non-saturating magnetoresistance (MR) observed very recently in the experiment [Ali et al., Nature 514, 205 (2014)]. The monolayer and bilayer of WTe2 p… ▽ More The electronic structure of WTe2 bulk and layers are investigated by using the first principles calculations. The perfect electron-hole (n-p) charge compensation and high carrier mobilities are found in WTe2 bulk, which may result in the large and non-saturating magnetoresistance (MR) observed very recently in the experiment [Ali et al., Nature 514, 205 (2014)]. The monolayer and bilayer of WTe2 preserve the semimetallic property, with the equal hole and electron carrier concentrations. Moreover, the very high carrier mobilities are also found in WTe2 monolayer, indicating that the WTe2 monolayer would have the same extraordinary MR effect as the bulk, which could have promising applications in nanostructured magnetic devices. △ Less

Submitted 29 December, 2014; originally announced December 2014.

Journal ref: EPL 110, 37004 (2015)

Disorder suppressed charge-density-wave and its origin in 1T-TaSe2-xTex

Authors: Y. Liu, D. F. Shao, W. J. Lu, L. J. Li, H. Y. Lv, X. D. Zhu, S. G. Tan, B. Yuan, L. Zu, X. C. Kan, W. H. Song, Y. P. Sun

Abstract: In the sake of connecting the charge-density-wave (CDW) of TaSe$_2$ and single-\emph{\textbf{q}} CDW-type distortion of TaTe$_2$, we present an overall electronic phase diagram of 1\emph{T}-TaSe$_{2-x}$Te$_x$ ($0 \leq x \leq 2$). In the experimentally prepared single crystals, the CDW is completely suppressed as $0.5 < x < 1.5$, while superconductivity emerges as $0.2 < x < 1.2$. Theoretically, si… ▽ More In the sake of connecting the charge-density-wave (CDW) of TaSe$_2$ and single-\emph{\textbf{q}} CDW-type distortion of TaTe$_2$, we present an overall electronic phase diagram of 1\emph{T}-TaSe$_{2-x}$Te$_x$ ($0 \leq x \leq 2$). In the experimentally prepared single crystals, the CDW is completely suppressed as $0.5 < x < 1.5$, while superconductivity emerges as $0.2 < x < 1.2$. Theoretically, similar to 1\emph{T}-TaSe$_2$ and 1\emph{T}-TaTe$_2$, the hypothetic 1\emph{T}-TaSeTe with ordered Se/Ta/Te stacking shows instability in the phonon dispersion, indicating the presence of CDW in the ideally ordered sample. The contradictory between experimental and theoretical results suggests that the CDW is suppressed by disorder in 1\emph{T}-TaSe$_{2-x}$Te$_x$. The formation and suppression of CDW are found to be independent with Fermi surface nesting based on the generated electron susceptibility calculations. The calculation of phonon linewidth suggests the strong \textbf{\emph{q}}-dependent electron-phonon coupling induced period-lattice-distortion (PLD) should be related to our observation: The do** can largely distort the TaX$_6$ (X = Se, Te) octahedra, which are disorderly distributed. The resulted puckered Ta-Ta layers are not compatible with the two-dimensional PLD. Therefore, CDW is suppressed in 1\emph{T}-TaSe$_{2-x}$Te$_x$. Our results offer an indirect evidence that PLD, which can be influenced by strong disorder, is the origin of CDW in the system. △ Less

Submitted 20 May, 2015; v1 submitted 14 December, 2014; originally announced December 2014.

Journal ref: Physical Review B 94, 045131 (2016)

Transport and Capacitance properties of Charge Density Wave in few layer 2H-TaS2 Devices

Authors: Y. F. Cao, K. M. Cai, L. J. Li, W. J. Lu, Y. P. Sun, K. Y. Wang

Abstract: We carefully investigated the transport and capacitance properties of few layer charge density wave (CDW) 2H-TaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is attributed to the interlayer interaction and inhomogeneous local defects of these micro-devices based on few layer 2H-TaS2 flakes. Semiconductivity rather than metallic property of 2H… ▽ More We carefully investigated the transport and capacitance properties of few layer charge density wave (CDW) 2H-TaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is attributed to the interlayer interaction and inhomogeneous local defects of these micro-devices based on few layer 2H-TaS2 flakes. Semiconductivity rather than metallic property of 2H-TaS2 devices was observed in our experiment at low temperature. The temperature dependence of the relative threshold voltage can be scaled to (1- T / Tr )^0.5+delta with delta=0.08 for the different measured devices with presence of the CDWs. The conductance-voltage and capacity-voltage measurements were performed simultaneously. At very low ac active voltage, we found that the hysteresis loops of these two measurements exactly match each other. Our results point out that the capacity-voltage measurements can also be used to define the threshold depinning voltage of the CDW, which give us a new method to investigate the CDWs. △ Less

Submitted 9 July, 2014; originally announced July 2014.

Comments: 4 pages, 4 figures

Journal ref: CHIN. PHYS. LETT. Vol. 31, No. 7 (2014) 077203

Coexistence of superconductivity and charge-density-wave domain in $1T$-Fe$_x$Ta$_{1-x}$SSe

Authors: Y. Liu, W. J. Lu, L. J. Li, R. Ang, Y. P. Sun

Abstract: A series of $1T$-Fe$_x$Ta$_{1-x}$SSe (0 $\leq x \leq$ 0.1) single crystals was fabricated via the chemical-vapor-transport (CVT) method and investigated by structure, transport, and magnetic measurements along with the density-functional-theory (DFT) calculations. The superconductivity (SC) in parent $1T$-TaSSe can be gradually suppressed by Fe-substitution ($x\leq0.03$), accompanied by the disapp… ▽ More A series of $1T$-Fe$_x$Ta$_{1-x}$SSe (0 $\leq x \leq$ 0.1) single crystals was fabricated via the chemical-vapor-transport (CVT) method and investigated by structure, transport, and magnetic measurements along with the density-functional-theory (DFT) calculations. The superconductivity (SC) in parent $1T$-TaSSe can be gradually suppressed by Fe-substitution ($x\leq0.03$), accompanied by the disappearance of charge-density-wave (CDW). DFT calculations show that the Fe-substitution effectively inhibits the CDW superstructure and thereby the CDW domains are destroyed. With further increasing $x$ ($x>0.03$), the disorder-induced scattering increases, and the system enters into the possible Anderson localization (AL) state. Our results prove the SC develops in the CDW phase and coexists with the CDW domain in $1T$-TaSSe system. △ Less

Submitted 22 June, 2014; v1 submitted 20 June, 2014; originally announced June 2014.

Enhanced thermoelectric performance of phosphorene by strain-induced band convergence

Authors: H. Y. Lv, W. J. Lu, D. F. Shao, Y. P. Sun

Abstract: The newly emerging monolayer phosphorene was recently predicted to be a promising thermoelectric material. In this work, we propose to further enhance the thermoelectric performance of phosphorene by the strain-induced band convergence. The effect of the uniaxial strain on the thermoelectric properties of phosphorene was investigated by using the first-principles calculations combined with the sem… ▽ More The newly emerging monolayer phosphorene was recently predicted to be a promising thermoelectric material. In this work, we propose to further enhance the thermoelectric performance of phosphorene by the strain-induced band convergence. The effect of the uniaxial strain on the thermoelectric properties of phosphorene was investigated by using the first-principles calculations combined with the semi-classical Boltzmann theory. When the zigzag-direction strain is applied, the Seebeck coefficient and electrical conductivity in zigzag direction can be greatly enhanced simultaneously at the critical strain of 5% where the band convergence is achieved. The largest ZT value of 1.65 at 300 K is then achieved conservatively estimated by using the bulk lattice thermal conductivity. When the armchair-direction strain of 8% is applied, the room-temperature ZT value can reach 2.12 in the armchair direction of phosphorene. Our results indicate that strain induced band convergence could be an effective method to enhance the thermoelectric performance of phosphorene. △ Less

Submitted 19 June, 2014; originally announced June 2014.

Journal ref: Phys. Rev. B 90, 085433 (2014)

Electron-doped phosphorene: A potential monolayer superconductor

Authors: D. F. Shao, W. J. Lu, H. Y. Lv, Y. P. Sun

Abstract: We predict by first-principles calculations that the electron-doped phosphorene is a potential BCS-like superconductor. The stretching modes at the Brillouin-zone center are remarkably softened by the electron-do**, which results in the strong electron-phonon coupling. The superconductivity can be introduced by a doped electron density ($n_{2D}$) above $1.3 \times10^{14}$ cm$^{-2}$, and may exis… ▽ More We predict by first-principles calculations that the electron-doped phosphorene is a potential BCS-like superconductor. The stretching modes at the Brillouin-zone center are remarkably softened by the electron-do**, which results in the strong electron-phonon coupling. The superconductivity can be introduced by a doped electron density ($n_{2D}$) above $1.3 \times10^{14}$ cm$^{-2}$, and may exist over the liquid helium temperature when $n_{2D}>2.6 \times10^{14}$ cm$^{-2}$. The maximum critical temperature is predicted to be higher than 10 K. The superconductivity of phosphorene will significantly broaden the applications of this novel material. △ Less

Submitted 18 December, 2014; v1 submitted 1 May, 2014; originally announced May 2014.

Journal ref: EPL 108, 67004 (2014)

Large thermoelectric power factors in black phosphorus and phosphorene

Authors: H. Y. Lv, W. J. Lu, D. F. Shao, Y. P. Sun

Abstract: The electronic properties of the layered black phosphorus (black-P) and its monolayer counterpart phosphorene are investigated by using the first-principles calculations based on the density functional theory (DFT). The room-temperature electronic transport coefficients are evaluated within the semi-classical Boltzmann theory. The electrical conductivity exhibits anisotropic behavior while the See… ▽ More The electronic properties of the layered black phosphorus (black-P) and its monolayer counterpart phosphorene are investigated by using the first-principles calculations based on the density functional theory (DFT). The room-temperature electronic transport coefficients are evaluated within the semi-classical Boltzmann theory. The electrical conductivity exhibits anisotropic behavior while the Seebeck coefficient is almost isotropic. At the optimal do** level and room temperature, bulk black-P and phosphorene are found to have large thermoelectric power factors of 118.4 and 138.9 μWcm-1K-2, respectively. The maximum dimensionless figure of merit (ZT value) of 0.22 can be achieved in bulk black-P by appropriate n-type do**, primarily limited by the reducible lattice thermal conductivity. For the phosphorene, the ZT value can reach 0.30 conservatively estimated by using the bulk lattice thermal conductivity. Our results suggest that both bulk black-P and phosphorene are potentially promising thermoelectric materials. △ Less

Submitted 21 April, 2014; originally announced April 2014.

CuSe-based layered compound Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$ as a quasi-two-dimensional metal

Authors: S. G. Tan, D. F. Shao, W. J. Lu, B. Yuan, Y. Liu, J. Yang, W. H. Song, Hechang Lei, Y. P. Sun

Abstract: We have investigated the physical properties of a new layered oxyselenide Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$, which crystallizes in an unusual intergrowth structure with Cu$_{2}$Se$_{2}$ and Bi$_{2}$YO$_{4}$ layers. Electric transport measurement indicates that Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$ behaves metallic. Thermal transport and Hall measurements show that the type of the carriers is hole-like a… ▽ More We have investigated the physical properties of a new layered oxyselenide Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$, which crystallizes in an unusual intergrowth structure with Cu$_{2}$Se$_{2}$ and Bi$_{2}$YO$_{4}$ layers. Electric transport measurement indicates that Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$ behaves metallic. Thermal transport and Hall measurements show that the type of the carriers is hole-like and it may be a potential thermoelectric material at high temperatures. First principle calculations are in agreement with experimental results and show that Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$ is a quasi-2D metal. Further theoretical investigation suggests the ground states of the Bi$_{2}$YO$_{4}$Cu$_{2}$Se$_{2}$-type can be tuned by designing the blocking layers, which will enrich the physical properties of these compounds. △ Less

Submitted 30 May, 2014; v1 submitted 31 March, 2014; originally announced March 2014.

Journal ref: Phys. Rev. B 90, 085144 (2014)

Prediction of superconductivity of $3d$ transition-metal based antiperovskites via magnetic phase diagram

Authors: D. F. Shao, W. J. Lu, P. Tong, S. Lin, J. C. Lin, Y. P. Sun

Abstract: We theoretically studied the electronic structure, magnetic properties, and lattice dynamics of a series of $3d$ transition-metal antiperovskite compounds AXM$_{3}$ by density function theory. Based on the Stoner criterion, we drew the magnetic phase diagram of carbon-based antiperovskites ACM$_{3}$. In the phase diagram, compounds with non-magnetic ground state but locating near the ferromagnetic… ▽ More We theoretically studied the electronic structure, magnetic properties, and lattice dynamics of a series of $3d$ transition-metal antiperovskite compounds AXM$_{3}$ by density function theory. Based on the Stoner criterion, we drew the magnetic phase diagram of carbon-based antiperovskites ACM$_{3}$. In the phase diagram, compounds with non-magnetic ground state but locating near the ferromagnetic boundary are suggested to yield sizeable electron-phonon coupling and behave superconductivity. To approve this deduction, we systematically calculated the phonon spectra and electron-phonon coupling of a series of Cr-based antiperovskites ACCr$_{3}$ and ANCr$_{3}$. The results show that AlCCr$_{3}$, GaCCr$_{3}$, and ZnNCr$_{3}$ could be moderate coupling BCS superconductors. The influence of spin fluctuation on superconductivity are discussed. Furthermore, other potential superconducting AXM$_{3}$ including some new Co-base and Fe-based antiperovskite superconductors are predicted from the magnetic phase diagram. △ Less

Submitted 22 November, 2013; v1 submitted 17 November, 2013; originally announced November 2013.

Comments: 11 pages, 15 figures

Journal ref: J. Phys. Soc. Jpn. 83 (2014) 054704

Suppression of superconductivity in layered Bi4O4S3 by Ag do**

Authors: S. G. Tan, P. Tong, Y. Liu, W. J. Lu, L. J. Li, B. C. Zhao, Y. P. Sun

Abstract: We report X-ray diffraction, magnetization and transport measurements for polycrystalline samples of the new layered superconductor Bi4-xAgxO4S3 (0<x<0.2). The superconducting transition temperature (TC) decreases gradually and finally suppressed for x>0.10. Accordingly, the resistivity changes from a metallic behavior for x<0.1 to a semiconductor-like behavior for x>0.1. The analysis of Seebeck c… ▽ More We report X-ray diffraction, magnetization and transport measurements for polycrystalline samples of the new layered superconductor Bi4-xAgxO4S3 (0<x<0.2). The superconducting transition temperature (TC) decreases gradually and finally suppressed for x>0.10. Accordingly, the resistivity changes from a metallic behavior for x<0.1 to a semiconductor-like behavior for x>0.1. The analysis of Seebeck coefficient shows there are two types of electron-like carriers dominate at different temperature regions, indicative of a multiband effect responsible for the transport properties. The suppression of superconductivity and the increased resistivity can be attributed to a shift of the Fermi level to the lower-energy side upon do**, which reduces the density of states at EF. Further, our result indicates the superconductivity in the parent Bi4O4S3 is intrinsic and the dopant Ag prefers to enter the BiS2 layers, which may essentially modify the electronic structure. △ Less

Submitted 27 August, 2012; originally announced August 2012.

Comments: 6 pages, 6 figures

Journal ref: Eur. Phys. J. B (2012) 85: 414

Superconducting and thermoelectric properties of new layered Superconductor Bi4O4S3

Authors: S. G. Tan, L. J. Li, Y. Liu, P. Tong, B. C. Zhao, W. J. Lu, Y. P. Sun

Abstract: Polycrystalline sample of the new layered superconductor Bi4O4S3 is successfully synthesized by solid-state reaction method by using Bi, S and Bi2O3 powders with one step reaction. The superconducting transition temperature (Tconset=4.5 K), the zero resistance transition temperature (Tc0=4.07 K) and the diamagnetic transition temperature (4.02 K at H=10 Oe) were confirmed by electrical transport a… ▽ More Polycrystalline sample of the new layered superconductor Bi4O4S3 is successfully synthesized by solid-state reaction method by using Bi, S and Bi2O3 powders with one step reaction. The superconducting transition temperature (Tconset=4.5 K), the zero resistance transition temperature (Tc0=4.07 K) and the diamagnetic transition temperature (4.02 K at H=10 Oe) were confirmed by electrical transport and magnetic measurements. Also, our results indicate a typical type II-superconductor behavior. In addition, a large thermoelectric effect was observed with a dimensionless thermoelectric figure of merit (ZT) of about 0.03 at 300K, indicating Bi4O4S3 can be a potential thermoelectric material. △ Less

Submitted 23 July, 2012; originally announced July 2012.

Comments: 10 pages, 4 figures

Journal ref: Physica C, 483, 94-96 (2012)

Fe-do** induced superconductivity in charge-density-wave system 1T-TaS2

Authors: L. J. Li, W. J. Lu, X. D. Zhu, L. S. Ling, Z. Qu, Y. P. Sun

Abstract: We report the interplay between charge-density-wave (CDW) and superconductivity of 1$T$-Fe$_{x}$Ta$_{1-x}$S$_{2}$ ($0\leq x \leq 0.05$) single crystals. The CDW order is gradually suppressed by Fe-do**, accompanied by the disappearance of pseudogap/Mott-gap as shown by the density functional theory (DFT) calculations. The superconducting state develops at low temperatures within the CDW state fo… ▽ More We report the interplay between charge-density-wave (CDW) and superconductivity of 1$T$-Fe$_{x}$Ta$_{1-x}$S$_{2}$ ($0\leq x \leq 0.05$) single crystals. The CDW order is gradually suppressed by Fe-do**, accompanied by the disappearance of pseudogap/Mott-gap as shown by the density functional theory (DFT) calculations. The superconducting state develops at low temperatures within the CDW state for the samples with the moderate do** levels. The superconductivity strongly depends on $x$ within a narrow range, and the maximum superconducting transition temperature is 2.8 K as $x=0.02$. We propose that the induced superconductivity and CDW phases are separated in real space. For high do** level ($x>0.04$), the Anderson localization (AL) state appears, resulting in a large increase of resistivity. We present a complete electronic phase diagram of 1$T$-Fe$_{x}$Ta$_{1-x}$S$_{2}$ system that shows a dome-like $T_{c}(x)$. △ Less

Submitted 11 September, 2012; v1 submitted 19 September, 2011; originally announced September 2011.

Journal ref: EPL 97, 67005 (2012)

Premelting of Al nonperfect (111) surface

Authors: F. L. Tang, X. G. Cheng, W. J. Lu, W. Y. Yu

Abstract: Melting behaviors of aluminum (111) perfect/nonperfect surfaces, characterized by structure ordering parameter, have been investigated by classical molecular dynamics simulation with embedded atom method potential. Al (111) perfect surface has a superheating temperature above bulk Al melting point Tm, in this work, by about 80 K. Al nonperfect (111) surface has somewhat different local lattice s… ▽ More Melting behaviors of aluminum (111) perfect/nonperfect surfaces, characterized by structure ordering parameter, have been investigated by classical molecular dynamics simulation with embedded atom method potential. Al (111) perfect surface has a superheating temperature above bulk Al melting point Tm, in this work, by about 80 K. Al nonperfect (111) surface has somewhat different local lattice structure from that on (111) perfect surface. Al nonperfect (111) surfaces tempt to premelt when temperature is less than Tm, in our simulation, by about 45 K. Aluminum atoms on the nonperfect surface zones are the sources of surface melting, and have larger velocities than those on the perfect surface zones. △ Less

Submitted 19 November, 2009; originally announced November 2009.

Comments: 17 pages, 5 figures. Accepted by Physica B

Surface structure and solidification morphology of aluminum nanoclusters

Authors: F. L. Tang, W. J. Lu, G. B. Chen, Y. Xie, W. Y. Yu

Abstract: Classical molecular dynamics simulation with embedded atom method potential had been performed to investigate the surface structure and solidification morphology of aluminum nanoclusters Aln (n = 256, 604, 1220 and 2048). It is found that Al cluster surfaces are comprised of (111) and (001) crystal planes. (110) crystal plane is not found on Al cluster surfaces in our simulation. On the surfaces… ▽ More Classical molecular dynamics simulation with embedded atom method potential had been performed to investigate the surface structure and solidification morphology of aluminum nanoclusters Aln (n = 256, 604, 1220 and 2048). It is found that Al cluster surfaces are comprised of (111) and (001) crystal planes. (110) crystal plane is not found on Al cluster surfaces in our simulation. On the surfaces of smaller Al clusters (n = 256 and 604), (111) crystal planes are dominant. On larger Al clusters (n = 1220 and 2048), (111) planes are still dominant but (001) planes can not be neglected. Atomic density on cluster (111)/(001) surface is smaller/larger than the corresponding value on bulk surface. Computational analysis on total surface area and surface energies indicates that the total surface energy of an ideal Al nanocluster has the minimum value when (001) planes occupy 25% of the total surface area. We predict that a melted Al cluster will be a truncated octahedron after equilibrium solidification. △ Less

Submitted 9 May, 2009; originally announced May 2009.

Comments: 22 pages, 6 figures, 34 references

Structural relaxation and Jahn-Teller distortion of LaMnO3 (001) surface

Authors: F. L. Tang, M. Huang, W. J. Lu, W. Y. Yu

Abstract: We studied in detail the structural relaxation and Jahn-Teller distortion in LaMnO3 (001) surface of the orthorhombic phase by means of classical atomistic simulation. It is found that MnO2-terminated surface is more energetically favorable than LaO-terminated surface by 0.34 eV. The standard deviation of Mn-O bond lengths of MnO6 octahedra and Jahn-Teller distortion oscillate in LaMnO3 (001) su… ▽ More We studied in detail the structural relaxation and Jahn-Teller distortion in LaMnO3 (001) surface of the orthorhombic phase by means of classical atomistic simulation. It is found that MnO2-terminated surface is more energetically favorable than LaO-terminated surface by 0.34 eV. The standard deviation of Mn-O bond lengths of MnO6 octahedra and Jahn-Teller distortion oscillate in LaMnO3 (001) surface. Our simulated atomic displacements in the surface are compared with some ab initio studies. △ Less

Submitted 22 April, 2009; originally announced April 2009.

Comments: 26 Pagpes, 4 Figures

Journal ref: Surface Science,603 948 (2009)