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High-coherence superconducting qubits made using industry-standard, advanced semiconductor manufacturing
Authors:
Jacques Van Damme,
Shana Massar,
Rohith Acharya,
Tsvetan Ivanov,
Daniel Perez Lozano,
Yann Canvel,
Mael Demarets,
Diziana Vangoidsenhoven,
Yannick Hermans,
Ju-Geng Lai,
Vadiraj Rao,
Massimo Mongillo,
Danny Wan,
Jo De Boeck,
Anton Potocnik,
Kristiaan De Greve
Abstract:
The development of superconducting qubit technology has shown great potential for the construction of practical quantum computers. As the complexity of quantum processors continues to grow, the need for stringent fabrication tolerances becomes increasingly critical. Utilizing advanced industrial fabrication processes could facilitate the necessary level of fabrication control to support the contin…
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The development of superconducting qubit technology has shown great potential for the construction of practical quantum computers. As the complexity of quantum processors continues to grow, the need for stringent fabrication tolerances becomes increasingly critical. Utilizing advanced industrial fabrication processes could facilitate the necessary level of fabrication control to support the continued scaling of quantum processors. However, these industrial processes are currently not optimized to produce high coherence devices, nor are they a priori compatible with the commonly used approaches to make superconducting qubits. In this work, we demonstrate for the first time superconducting transmon qubits manufactured in a 300 mm CMOS pilot line, using industrial fabrication methods, with resulting relaxation and coherence times already exceeding 100 microseconds. We show across-wafer, large-scale statistics studies of coherence, yield, variability, and aging that confirm the validity of our approach. The presented industry-scale fabrication process, using exclusively optical lithography and reactive ion etching, shows performance and yield similar to the conventional laboratory-style techniques utilizing metal lift-off, angled evaporation, and electron-beam writing. Moreover, it offers potential for further upscaling by including three-dimensional integration and additional process optimization using advanced metrology and judicious choice of processing parameters and splits. This result marks the advent of more reliable, large-scale, truly CMOS-compatible fabrication of superconducting quantum computing processors.
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Submitted 22 April, 2024; v1 submitted 2 March, 2024;
originally announced March 2024.
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Properties of Nb\_xTi\_{(1-x)}N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits
Authors:
Daniel Pérez Lozano,
Jean-Philippe Soulié,
Blake Hodges,
Xiaoyu Piao,
Sabine O'Neal,
Anne-Marie Valente-Feliciano,
Quentin Herr,
Zsolt Tőkei,
Min-Soo Kim,
Anna Herr
Abstract:
Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating mature CMOS processes, ensuring uniformity, and optimizing the yield. This study explores the properties of NbxTi(1-x)N films fabricated by magnetron DC sputtering o…
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Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating mature CMOS processes, ensuring uniformity, and optimizing the yield. This study explores the properties of NbxTi(1-x)N films fabricated by magnetron DC sputtering on 300 mm Si wafers. As a promising alternative to traditional Nb in device manufacturing, NbxTi(1-x)N offers numerous advantages, including enhanced stability and scalability to smaller dimensions, in both processing and design. As a ternary material, NbxTi(1-x)N allows engineering material parameters by changing deposition conditions. The engineered properties can be used to modulate device parameters through the stack and mitigate failure modes. We report characterization of NbxTi(1-x)N films at less than 2% thickness variability, 2.4% Tc variability and 3% composition variability. The films material properties such as resistivity (140-375 Ωcm) and critical temperature Tc (4.6 K - 14.1 K) are correlated with stoichiometry and morphology of the films. Our results highlight the significant influence of deposition conditions on crystallographic texture along the films and its correlation with Tc.
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Submitted 17 November, 2023; v1 submitted 16 November, 2023;
originally announced November 2023.
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Deterministic generation of shaped single microwave photons using a parametrically driven coupler
Authors:
Jiaying Yang,
Axel Eriksson,
Mohammed Ali Aamir,
Ingrid Strandberg,
Claudia Castillo Moreno,
Daniel Perez Lozano,
Per Persson,
Simone Gasparinetti
Abstract:
A distributed quantum computing system requires a quantum communication channel between spatially separated processing units. In superconducting circuits, such a channel can be realized by using propagating microwave photons to encode and transfer quantum information between an emitter and a receiver node. Here we experimentally demonstrate a superconducting circuit that deterministically transfer…
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A distributed quantum computing system requires a quantum communication channel between spatially separated processing units. In superconducting circuits, such a channel can be realized by using propagating microwave photons to encode and transfer quantum information between an emitter and a receiver node. Here we experimentally demonstrate a superconducting circuit that deterministically transfers the state of a data qubit into a propagating microwave mode, with a process fidelity of 94.5%. We use a time-varying parametric drive to shape the temporal profile of the propagating mode to be time-symmetric and with constant phase, so that reabsorption by the receiving processor can be implemented as a time-reversed version of the emission. We demonstrate a self-calibrating routine to correct for time-dependent shifts of the emitted frequencies due to the modulation of the parametric drive. Our work provides a reliable method to implement high-fidelity quantum state transfer and remote entanglement operations in a distributed quantum computing network.
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Submitted 2 December, 2023; v1 submitted 6 March, 2023;
originally announced March 2023.
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Argon milling induced decoherence mechanisms in superconducting quantum circuits
Authors:
J. Van Damme,
Ts. Ivanov,
P. Favia,
T. Conard,
J. Verjauw,
R. Acharya,
D. Perez Lozano,
B. Raes,
J. Van de Vondel,
A. M. Vadiraj,
M. Mongillo,
D. Wan,
J. De Boeck,
A. Potočnik,
K. De Greve
Abstract:
The fabrication of superconducting circuits requires multiple deposition, etch and cleaning steps, each possibly introducing material property changes and microscopic defects. In this work, we specifically investigate the process of argon milling, a potentially coherence limiting step, using niobium and aluminum superconducting resonators as a proxy for surface-limited behavior of qubits. We find…
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The fabrication of superconducting circuits requires multiple deposition, etch and cleaning steps, each possibly introducing material property changes and microscopic defects. In this work, we specifically investigate the process of argon milling, a potentially coherence limiting step, using niobium and aluminum superconducting resonators as a proxy for surface-limited behavior of qubits. We find that niobium microwave resonators exhibit an order of magnitude decrease in quality-factors after surface argon milling, while aluminum resonators are resilient to the same process. Extensive analysis of the niobium surface shows no change in the suboxide composition due to argon milling, while two-tone spectroscopy measurements reveal an increase in two-level system electrical dipole moments, indicating a structurally altered niobium oxide hosting larger two-level system defects. However, a short dry etch can fully recover the argon milling induced losses on niobium, offering a potential route towards state-of-the-art overlap Josephson junction qubits with niobium circuitry.
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Submitted 7 February, 2023;
originally announced February 2023.
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Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers
Authors:
D. P. Lozano,
M. Mongillo,
X. Piao,
S. Couet,
D. Wan,
Y. Canvel,
A. M. Vadiraj,
Ts. Ivanov,
J. Verjauw,
R. Acharya,
J. Van Damme,
F. A. Mohiyaddin,
J. Jussot,
P. P. Gowda,
A. Pacco,
B. Raes,
J. Van de Vondel,
I. P. Radu,
B. Govoreanu,
J. Swerts,
A. Potočnik,
K. De Greve
Abstract:
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised…
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The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised on sapphire substrates, which is incompatible with advanced processing in industry-scale fabrication facilities. Here, we demonstrate the fabrication of high-quality factor α-tantalum resonators directly on silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. By comparing experiments with simulated resonator loss, we demonstrate that two-level-system loss is dominated by surface oxide contributions and not the substrate-metal interface. Our study paves the way to large scale manufacturing of low-loss superconducting circuits and to materials-driven advancements in superconducting circuit performance.
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Submitted 30 November, 2022; v1 submitted 29 November, 2022;
originally announced November 2022.
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Overcoming I/O bottleneck in superconducting quantum computing: multiplexed qubit control with ultra-low-power, base-temperature cryo-CMOS multiplexer
Authors:
Rohith Acharya,
Steven Brebels,
Alexander Grill,
Jeroen Verjauw,
Tsvetan Ivanov,
Daniel Perez Lozano,
Danny Wan,
Jacques van Damme,
A. M. Vadiraj,
Massimo Mongillo,
Bogdan Govoreanu,
Jan Craninckx,
I. P. Radu,
Kristiaan de Greve,
Georges Gielen,
Francky Catthoor,
Anton Potočnik
Abstract:
Large-scale superconducting quantum computing systems entail high-fidelity control and readout of large numbers of qubits at millikelvin temperatures, resulting in a massive input-output bottleneck. Cryo-electronics, based on complementary metal-oxide-semiconductor (CMOS) technology, may offer a scalable and versatile solution to overcome this bottleneck. However, detrimental effects due to cross-…
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Large-scale superconducting quantum computing systems entail high-fidelity control and readout of large numbers of qubits at millikelvin temperatures, resulting in a massive input-output bottleneck. Cryo-electronics, based on complementary metal-oxide-semiconductor (CMOS) technology, may offer a scalable and versatile solution to overcome this bottleneck. However, detrimental effects due to cross-coupling between the electronic and thermal noise generated during cryo-electronics operation and the qubits need to be avoided. Here we present an ultra-low power radio-frequency (RF) multiplexing cryo-electronics solution operating below 15 mK that allows for control and interfacing of superconducting qubits with minimal cross-coupling. We benchmark its performance by interfacing it with a superconducting qubit and observe that the qubit's relaxation times ($T_1$) are unaffected, while the coherence times ($T_2$) are only minimally affected in both static and dynamic operation. Using the multiplexer, single qubit gate fidelities above 99.9%, i.e., well above the threshold for surface-code based quantum error-correction, can be achieved with appropriate thermal filtering. In addition, we demonstrate the capability of time-division-multiplexed qubit control by dynamically windowing calibrated qubit control pulses. Our results show that cryo-CMOS multiplexers could be used to significantly reduce the wiring resources for large-scale qubit device characterization, large-scale quantum processor control and quantum error correction protocols.
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Submitted 26 September, 2022;
originally announced September 2022.
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Engineering symmetry-selective couplings of a superconducting artificial molecule to microwave waveguides
Authors:
Mohammed Ali Aamir,
Claudia Castillo Moreno,
Simon Sundelin,
Janka Biznárová,
Marco Scigliuzzo,
Kowshik Erappaji Patel,
Amr Osman,
D. P. Lozano,
Simone Gasparinetti
Abstract:
Tailoring the decay rate of structured quantum emitters into their environment opens new avenues for nonlinear quantum optics, collective phenomena, and quantum communications. Here we demonstrate a novel coupling scheme between an artificial molecule comprising two identical, strongly coupled transmon qubits, and two microwave waveguides. In our scheme, the coupling is engineered so that transiti…
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Tailoring the decay rate of structured quantum emitters into their environment opens new avenues for nonlinear quantum optics, collective phenomena, and quantum communications. Here we demonstrate a novel coupling scheme between an artificial molecule comprising two identical, strongly coupled transmon qubits, and two microwave waveguides. In our scheme, the coupling is engineered so that transitions between states of the same (opposite) symmetry, with respect to the permutation operator, are predominantly coupled to one (the other) waveguide. The symmetry-based coupling selectivity, as quantified by the ratio of the coupling strengths, exceeds a factor of 30 for both the waveguides in our device. In addition, we implement a two-photon Raman process activated by simultaneously driving both waveguides, and show that it can be used to coherently couple states of different symmetry in the single-excitation manifold of the molecule. Using that process, we implement frequency conversion across the waveguides, mediated by the molecule, with efficiency of about 95%. Finally, we show that this coupling arrangement makes it possible to straightforwardly generate spatially-separated Bell states propagating across the waveguides. We envisage further applications to quantum thermodynamics, microwave photodetection, and photon-photon gates.
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Submitted 24 February, 2022;
originally announced February 2022.
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Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms
Authors:
J. Verjauw,
R. Acharya,
J. Van Damme,
Ts. Ivanov,
D. Perez Lozano,
F. A. Mohiyaddin,
D. Wan,
J. Jussot,
A. M. Vadiraj,
M. Mongillo,
M. Heyns,
I. Radu,
B. Govoreanu,
A. Potočnik
Abstract:
As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced process control in industry-scale CMOS fabrication facilities, different processing methods will be required. In particular, the double-angle evaporation and li…
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As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced process control in industry-scale CMOS fabrication facilities, different processing methods will be required. In particular, the double-angle evaporation and lift-off techniques used for current, state-of-the art superconducting qubits are generally incompatible with modern day manufacturable processes. Here, we demonstrate a fully CMOS compatible qubit fabrication method, and show results from overlap Josephson junction devices with long coherence and relaxation times, on par with the state-of-the-art. We experimentally verify that Argon milling - the critical step during junction fabrication - and a subtractive etch process nevertheless result in qubits with average qubit energy relaxation times T1 reaching 70 $μ$s, with maximum values exceeding 100 $μ$s. Furthermore, we show that our results are still limited by surface losses and not, crucially, by junction losses. The presented fabrication process therefore heralds an important milestone towards a manufacturable 300 mm CMOS process for high-coherence superconducting qubits and has the potential to advance the scaling of superconducting device architectures.
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Submitted 21 February, 2022;
originally announced February 2022.
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Qubit-compatible substrates with superconducting through-silicon vias
Authors:
K. Grigoras,
N. Yurttagül,
J. -P. Kaikkonen,
E. T. Mannila,
P. Eskelinen,
D. P. Lozano,
H. -X. Li,
M. Rommel,
D. Shiri,
N. Tiencken,
S. Simbierowicz,
A. Ronzani,
J. Hätinen,
D. Datta,
V. Vesterinen,
L. Grönberg,
J. Biznárová,
A. Fadavi Roudsari,
S. Kosen,
A. Osman,
M. Prunnila,
J. Hassel,
J. Bylander,
J. Govenius
Abstract:
We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the ar…
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We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.
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Submitted 8 November, 2022; v1 submitted 25 January, 2022;
originally announced January 2022.
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Building Blocks of a Flip-Chip Integrated Superconducting Quantum Processor
Authors:
Sandoko Kosen,
Hang-Xi Li,
Marcus Rommel,
Daryoush Shiri,
Christopher Warren,
Leif Grönberg,
Jaakko Salonen,
Tahereh Abad,
Janka Biznárová,
Marco Caputo,
Liangyu Chen,
Kestutis Grigoras,
Göran Johansson,
Anton Frisk Kockum,
Christian Križan,
Daniel Pérez Lozano,
Graham Norris,
Amr Osman,
Jorge Fernández-Pendás,
Alberto Ronzani,
Anita Fadavi Roudsari,
Slawomir Simbierowicz,
Giovanna Tancredi,
Andreas Wallraff,
Christopher Eichler
, et al. (2 additional authors not shown)
Abstract:
We have integrated single and coupled superconducting transmon qubits into flip-chip modules. Each module consists of two chips -- one quantum chip and one control chip -- that are bump-bonded together. We demonstrate time-averaged coherence times exceeding $90\,μs$, single-qubit gate fidelities exceeding $99.9\%$, and two-qubit gate fidelities above $98.6\%$. We also present device design methods…
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We have integrated single and coupled superconducting transmon qubits into flip-chip modules. Each module consists of two chips -- one quantum chip and one control chip -- that are bump-bonded together. We demonstrate time-averaged coherence times exceeding $90\,μs$, single-qubit gate fidelities exceeding $99.9\%$, and two-qubit gate fidelities above $98.6\%$. We also present device design methods and discuss the sensitivity of device parameters to variation in interchip spacing. Notably, the additional flip-chip fabrication steps do not degrade the qubit performance compared to our baseline state-of-the-art in single-chip, planar circuits. This integration technique can be extended to the realisation of quantum processors accommodating hundreds of qubits in one module as it offers adequate input/output wiring access to all qubits and couplers.
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Submitted 14 June, 2022; v1 submitted 5 December, 2021;
originally announced December 2021.
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Robust preparation of Wigner-negative states with optimized SNAP-displacement sequences
Authors:
Marina Kudra,
Mikael Kervinen,
Ingrid Strandberg,
Shahnawaz Ahmed,
Marco Scigliuzzo,
Amr Osman,
Daniel Pérez Lozano,
Mats O. Tholén,
Riccardo Borgani,
David B. Haviland,
Giulia Ferrini,
Jonas Bylander,
Anton Frisk Kockum,
Fernando Quijandría,
Per Delsing,
Simone Gasparinetti
Abstract:
Hosting non-classical states of light in three-dimensional microwave cavities has emerged as a promising paradigm for continuous-variable quantum information processing. Here we experimentally demonstrate high-fidelity generation of a range of Wigner-negative states useful for quantum computation, such as Schrödinger-cat states, binomial states, Gottesman-Kitaev-Preskill (GKP) states, as well as c…
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Hosting non-classical states of light in three-dimensional microwave cavities has emerged as a promising paradigm for continuous-variable quantum information processing. Here we experimentally demonstrate high-fidelity generation of a range of Wigner-negative states useful for quantum computation, such as Schrödinger-cat states, binomial states, Gottesman-Kitaev-Preskill (GKP) states, as well as cubic phase states. The latter states have been long sought after in quantum optics and were never achieved experimentally before. To do so, we use a sequence of interleaved selective number-dependent arbitrary phase (SNAP) gates and displacements. We optimize the state preparation in two steps. First we use a gradient-descent algorithm to optimize the parameters of the SNAP and displacement gates. Then we optimize the envelope of the pulses implementing the SNAP gates. Our results show that this way of creating highly non-classical states in a harmonic oscillator is robust to fluctuations of the system parameters such as the qubit frequency and the dispersive shift.
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Submitted 6 June, 2022; v1 submitted 15 November, 2021;
originally announced November 2021.
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Extensible quantum simulation architecture based on atom-photon bound states in an array of high-impedance resonators
Authors:
Marco Scigliuzzo,
Giuseppe Calajò,
Francesco Ciccarello,
Daniel Perez Lozano,
Andreas Bengtsson,
Pasquale Scarlino,
Andreas Wallraff,
Darrick Chang,
Per Delsing,
Simone Gasparinetti
Abstract:
Engineering the electromagnetic environment of a quantum emitter gives rise to a plethora of exotic light-matter interactions. In particular, photonic lattices can seed long-lived atom-photon bound states inside photonic band gaps. Here we report on the concept and implementation of a novel microwave architecture consisting of an array of compact, high-impedance superconducting resonators forming…
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Engineering the electromagnetic environment of a quantum emitter gives rise to a plethora of exotic light-matter interactions. In particular, photonic lattices can seed long-lived atom-photon bound states inside photonic band gaps. Here we report on the concept and implementation of a novel microwave architecture consisting of an array of compact, high-impedance superconducting resonators forming a 1 GHz-wide pass band, in which we have embedded two frequency-tuneable artificial atoms. We study the atom-field interaction and access previously unexplored coupling regimes, in both the single- and double-excitation subspace. In addition, we demonstrate coherent interactions between two atom-photon bound states, in both resonant and dispersive regimes, that are suitable for the implementation of SWAP and CZ two-qubit gates. The presented architecture holds promise for quantum simulation with tuneable-range interactions and photon transport experiments in nonlinear regime.
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Submitted 14 July, 2021;
originally announced July 2021.
