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External control of GaN band bending using phosphonate self-assembled monolayers
Authors:
T. Auzelle,
F. Ullrich,
S. Hietzschold,
C. Sinito,
S. Brackmann,
W. Kowalsky,
E. Mankel,
O. Brandt,
R. Lovrincic,
S. Fernández-Garrido
Abstract:
We report on the optoelectronic properties of GaN$(0001)$ and $(1\bar{1}00)$ surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correlation between the acid's electronegativity and the GaN surface band bending, two types of phosphonic acids, n-octylphosphonic acid (OPA) and 1H,1H,2H,2H-perfluorooctanephosphonic acid (PFOPA), are grafted on oxidized GaN…
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We report on the optoelectronic properties of GaN$(0001)$ and $(1\bar{1}00)$ surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correlation between the acid's electronegativity and the GaN surface band bending, two types of phosphonic acids, n-octylphosphonic acid (OPA) and 1H,1H,2H,2H-perfluorooctanephosphonic acid (PFOPA), are grafted on oxidized GaN$(0001)$ and GaN$(1\bar{1}00)$ layers as well as on GaN nanowires. The resulting hybrid inorganic/organic heterostructures are investigated by X-ray photoemission and photoluminescence spectroscopy. The GaN work function is changed significantly by the grafting of phosphonic acids, evidencing the formation of dense self-assembled monolayers. Regardless of the GaN surface orientation, both types of phosphonic acids significantly impact the GaN surface band bending. A dependence on the acids' electronegativity is, however, only observed for the oxidized GaN$(1\bar{1}00)$ surface, indicating a relatively low density of surface states and a favorable band alignment between the surface oxide and acids' electronic states. Regarding the optical properties, the covalent bonding of PFOPA and OPA on oxidized GaN layers and nanowires significantly affect their external quantum efficiency, especially in the nanowire case due to the large surface-to-volume ratio. The variation in the external quantum efficiency is related to the modication of both the internal electric fields and surface states. These results demonstrate the potential of phosphonate chemistry for the surface functionalization of GaN, which could be exploited for selective sensing applications.
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Submitted 25 September, 2020;
originally announced September 2020.
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Kinetic modelling of carrier cooling in lead halide perovskite materials
Authors:
Thomas R. Hopper,
Ahhyun Jeong,
Andrei Gorodetsky,
Franziska Krieg,
Maryna I. Bodnarchuk,
Xiaokun Huang,
Robert Lovrincic,
Maksym V. Kovalenko,
Artem A. Bakulin
Abstract:
The relaxation of high-energy "hot" carriers in semiconductors is known to involve the redistribution of energy between (i) hot and cold carriers and (ii) hot carriers and phonons. Over the past few years, these two processes have been identified in lead-halide perovskites (LHPs) using ultrafast pump-probe experiments, but the interplay between these processes is not fully understood. Here we pres…
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The relaxation of high-energy "hot" carriers in semiconductors is known to involve the redistribution of energy between (i) hot and cold carriers and (ii) hot carriers and phonons. Over the past few years, these two processes have been identified in lead-halide perovskites (LHPs) using ultrafast pump-probe experiments, but the interplay between these processes is not fully understood. Here we present a comprehensive kinetic model to elucidate the individual effects of the hot and cold carriers in bulk and nanocrystal $CsPbBr_{3}$ films obtained from "pump-push-probe" measurements. In accordance with our previous work, we observe that the cooling dynamics in the materials decelerate as the number of hot carriers increases, which we explain through a "hot-phonon bottleneck" mechanism. On the other hand, as the number of cold carriers increases, we observe an acceleration of the cooling kinetics in the samples. We describe the interplay of these opposing effects using our model, and by using series of natural approximations, reduce this model to a simple form containing terms for the carrier-carrier and carrier-phonon interactions. The model can be instrumental for evaluating the details of carrier cooling and electron-phonon couplings in a broad range of LHP optoelectronic materials.
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Submitted 9 December, 2019;
originally announced December 2019.
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Electronic properties of air-exposed GaN$(1\bar{1}00)$ and $(0001)$ surfaces after several device processing compatible cleaning steps
Authors:
Thomas Auzelle,
Florian Ullrich,
Sebastian Hietzschold,
Stefan Brackmann,
Sabina Hillebrandt,
Wolfgang Kowalsky,
Eric Mankel,
Robert Lovrincic,
Sergio Fernández-Garrido
Abstract:
We report on the electronic properties of GaN$(1\bar{1}00)$ and $(0001)$ surfaces after three different and subsequent device processing compatible cleaning steps: HCl etching, annealing at $400$ $^\circ$C in N$_2$ atmosphere, and O$_2$ plasma exposure. The surface electronic properties are quantified, in the dark and under ultraviolet illumination, using X-ray photoelectron spectroscopy and a Kel…
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We report on the electronic properties of GaN$(1\bar{1}00)$ and $(0001)$ surfaces after three different and subsequent device processing compatible cleaning steps: HCl etching, annealing at $400$ $^\circ$C in N$_2$ atmosphere, and O$_2$ plasma exposure. The surface electronic properties are quantified, in the dark and under ultraviolet illumination, using X-ray photoelectron spectroscopy and a Kelvin probe. We find that the cleaning steps largely affect the work function and the band bending of both GaN orientations. These modifications are attributed to the presence of different surface states as well as to the formation of adsorbates building up distinct surface dipoles. Besides these results, we detect that under ultraviolet illumination the work function of the surfaces exposed to HCl decreases by at least $0.2$ eV without screening of the band bending. We thus attribute the observed surface photovoltage to a photo-induced modification of the surface dipole. Overall, these results emphasize the strong dependence of the electronic properties of air-exposed GaN surfaces on adsorbates. As a result, we advocate the use of the common cleaning steps analyzed here to re-initialize at will GaN$(1\bar{1}00)$ and $(0001)$ surfaces into pre-defined states.
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Submitted 9 August, 2019;
originally announced August 2019.
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Optical Phonons in Methylammonium Lead Halide Perovskites and Implications for Charge Transport
Authors:
Michael Sendner,
Pabitra K. Nayak,
David A. Egger,
Sebastian Beck,
Christian Müller,
Bernd Epding,
Wolfgang Kowalsky,
Leeor Kronik,
Henry J. Snaith,
Annemarie Pucci,
Robert Lovrinčić
Abstract:
Lead-halide perovskites are promising materials for opto-electronic applications. Recent reports indicated that their mechanical and electronic properties are strongly affected by the lattice vibrations. Herein we report far-infrared spectroscopy measurements of CH$_{3}$NH$_{3}$Pb(I/Br/Cl)$_{3}$ thin films and single crystals at room temperature and a detailed quantitative analysis of the spectra.…
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Lead-halide perovskites are promising materials for opto-electronic applications. Recent reports indicated that their mechanical and electronic properties are strongly affected by the lattice vibrations. Herein we report far-infrared spectroscopy measurements of CH$_{3}$NH$_{3}$Pb(I/Br/Cl)$_{3}$ thin films and single crystals at room temperature and a detailed quantitative analysis of the spectra. We find strong broadening and anharmonicity of the lattice vibrations for all three halide perovskites, which indicates dynamic disorder of the lead-halide cage at room temperature. We determine the frequencies of the transversal and longitudinal optical phonons, and use them to calculate, via appropriate models, the static dielectric constants, polaron masses, electron-phonon coupling constants, and upper limits for the phonon-scattering limited charge carrier mobilities. Within the limitations of the model used, we can place an upper limit of 200$\,$cm$^{2}$V$^{-1}$s$^{-1}$ for the room temperature charge carrier mobility in MAPbI$_{3}$ single crystals. Our findings are important for the basic understanding of charge transport processes and mechanical properties in metal halide perovskites.
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Submitted 11 October, 2016; v1 submitted 28 July, 2016;
originally announced July 2016.
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Mode-selective vibrational control of charge transport in $π$-conjugated molecular materials
Authors:
Artem A. Bakulin,
Robert Lovrinčić,
Yu Xi,
Oleg Selig,
Huib J. Bakker,
Yves L. A. Rezus,
Pabitra K. Nayak,
Alexandr Fonari,
Veaceslav Coropceanu,
Jean-Luc Brédas,
David Cahen
Abstract:
The soft character of organic materials leads to strong coupling between molecular nuclear and electronic dynamics. This coupling opens the way to control charge transport in organic electronic devices by inducing molecular vibrational motions. However, despite encouraging theoretical predictions, experimental realization of such control has remained elusive. Here we demonstrate experimentally tha…
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The soft character of organic materials leads to strong coupling between molecular nuclear and electronic dynamics. This coupling opens the way to control charge transport in organic electronic devices by inducing molecular vibrational motions. However, despite encouraging theoretical predictions, experimental realization of such control has remained elusive. Here we demonstrate experimentally that photoconductivity in a model organic optoelectronic device can be controlled by the selective excitation of molecular vibrations. Using an ultrafast infrared laser source to create a coherent superposition of vibrational motions in a pentacene/C60 photoresistor, we observe that excitation of certain modes in the 1500-1700 cm$^{-1}$ region leads to photocurrent enhancement. Excited vibrations affect predominantly trapped carriers. The effect depends on the nature of the vibration and its mode-specific character can be well described by the vibrational modulation of intermolecular electronic couplings. Vibrational control thus presents a new tool for studying electron-phonon coupling and charge dynamics in (bio)molecular materials.
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Submitted 2 March, 2015;
originally announced March 2015.
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A permanent, stable, and simple top-contact for molecular electronics on Si: Pb evaporated on organic monolayers
Authors:
Robert Lovrinčić,
Olga Kraynis,
Rotem Har-Lavan,
Abd-Elrazek Haj-Yahya,
Wenjie Li,
Ayelet Vilan,
David Cahen
Abstract:
We show that thermally evaporated lead (Pb) preserves the electronic properties of organic monolayers on Si and the surface passivation of the Si surface itself. The obtained current-voltage characteristics are in accordance with results from the well-established hanging mercury drop method and preserve both the molecule-induced dipolar effect and length-attenuation of current. We rationalize our…
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We show that thermally evaporated lead (Pb) preserves the electronic properties of organic monolayers on Si and the surface passivation of the Si surface itself. The obtained current-voltage characteristics are in accordance with results from the well-established hanging mercury drop method and preserve both the molecule-induced dipolar effect and length-attenuation of current. We rationalize our findings by the lack of interaction between the Pb and the Si substrate. Our method is fast, scalable, compatible to standard semiconductor processing, and can help to spur the large-scale utilization of silicon-organic hybrid electronics.
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Submitted 9 November, 2012;
originally announced November 2012.
