-
Evidence for an excitonic insulator phase in a zero-gap InAs/GaSb bilayer
Authors:
W. Yu,
V. Clericò,
C. Hernández Fuentevilla,
X. Shi,
Y. Jiang,
D. Saha,
W. K. Lou,
K. Chang,
D. H. Huang,
G. Gumbs,
D. Smirnov,
C. J. Stanton,
Z. Jiang,
V. Bellani,
Y. Meziani,
E. Diez,
W. Pan,
S. D. Hawkins,
J. F. Klem
Abstract:
Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the energy separation between the single particle states. Here we report on electrical transport measurements on spatially separated two-dimensional electron and hol…
▽ More
Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the energy separation between the single particle states. Here we report on electrical transport measurements on spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (~500 kΩ) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature-dependence above T = 7 K and perfect stability against quantizing magnetic fields. By quantitatively comparing our data with early theoretical predictions, we show that such unexpectedly large resistance in our nominally zero-gap semi-metal system is probably due to the formation of an excitonic insulator state.
△ Less
Submitted 25 January, 2017;
originally announced January 2017.
-
Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy
Authors:
Y. Jiang,
S. Thapa,
G. D. Sanders,
C. J. Stanton,
Q. Zhang,
J. Kono,
W. K. Lou,
K. Chang,
S. D. Hawkins,
J. F. Klem,
W. Pan,
D. Smirnov,
Z. Jiang
Abstract:
We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show that owing to the low carrier density of our samples (approaching the intrinsic limit), the magneto-absorption spectra evolve from a single cyclotron resonance peak in the normal state to multiple absorption peaks in the inve…
▽ More
We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show that owing to the low carrier density of our samples (approaching the intrinsic limit), the magneto-absorption spectra evolve from a single cyclotron resonance peak in the normal state to multiple absorption peaks in the inverted state with distinct magnetic field dependence. Using an eight-band Pidgeon-Brown model, we explain all the major absorption peaks observed in our experiment. We demonstrate that the semiconductor to semimetal transition can be realized by manipulating the quantum confinement, the strain, and the magnetic field. Our work paves the way for band engineering of optimal InAs/GaSb structures for realizing novel topological states as well as for device applications in the terahertz regime.
△ Less
Submitted 18 October, 2016;
originally announced October 2016.
-
Electronic and magneto-optical properties of monolayer phosphorene quantum dots
Authors:
Rui Zhang,
X. Y. Zhou,
D. Zhang,
W. K. Lou,
F. Zhai,
Kai Chang
Abstract:
We theoretically investigate the electronic and magneto-optical properties of rectangular, hexangular, and triangular monolayer phosphorene quantum dots (MPQDs) utilizing the tight-binding method. The electronic states, density of states, electronic density distribution, and Laudau levels as well as the optical absorption spectrum are calculated numerically. Our calculations show that: (1) edge st…
▽ More
We theoretically investigate the electronic and magneto-optical properties of rectangular, hexangular, and triangular monolayer phosphorene quantum dots (MPQDs) utilizing the tight-binding method. The electronic states, density of states, electronic density distribution, and Laudau levels as well as the optical absorption spectrum are calculated numerically. Our calculations show that: (1) edge states appear in the band gap in all kinds of MPQDs regardless of their shapes and edge configurations due to the anisotropic electron hop** in monolayer phosphorene (MLP). Electrons in any edge state appear only in the armchair direction of the dot boundary, which is distinct from that in graphene quantum dots; (2) the magnetic levels of MPQDs exhibit a Hofstadter-butterfly spectrum and approach the Landau levels of MLP as the magnetic field increases . A "flat band" appears in the magneto-energy spectrum which is totally different from that of MLP; (3) the electronic and optical properties can be tuned by the dot size, the types of boundary edges and the external magnetic field.
△ Less
Submitted 14 July, 2015;
originally announced July 2015.
-
Landau levels and magneto-transport property of monolayer phosphorene
Authors:
X. Y. Zhou,
R. Zhang,
J. P. Sun,
Y. L. Zou,
D. Zhang,
W. K. Lou,
F. Cheng,
G. H. Zhou,
F. Zhai,
Kai Chang
Abstract:
We investigate theoretically the Landau levels (LLs) and magneto-transport properties of phosphorene under a perpendicular magnetic field within the framework of the effective \textbf{\emph{k$\cdot$p}} Hamiltonian and tight-binding (TB) model. At low field regime, we find that the LLs linearly depend both on the LL index $n$ and magnetic field $B$, which is similar with that of conventional semico…
▽ More
We investigate theoretically the Landau levels (LLs) and magneto-transport properties of phosphorene under a perpendicular magnetic field within the framework of the effective \textbf{\emph{k$\cdot$p}} Hamiltonian and tight-binding (TB) model. At low field regime, we find that the LLs linearly depend both on the LL index $n$ and magnetic field $B$, which is similar with that of conventional semiconductor two-dimensional electron gas. The Landau splittings of conduction and valence band are different and the wavefunctions corresponding to the LLs are strongly anisotropic due to the different anisotropic effective masses. An analytical expression for the LLs in low energy regime is obtained via solving the decoupled Hamiltonian, which agrees well with the numerical calculations. At high magnetic regime, a self-similar Hofstadter butterfly (HB) spectrum is obtained by using the TB model. The HB spectrum is consistent with the Landau level fan calculated from the effective \textbf{\emph{k$\cdot$p}} theory in a wide regime of magnetic fields. We find the LLs of phosphorene nanoribbon depend strongly on the ribbon orientation due to the anisotropic hop** parameters. The Hall and the longitudinal conductances (resistances) clearly reveal the structure of LLs.
△ Less
Submitted 24 April, 2015; v1 submitted 16 November, 2014;
originally announced November 2014.
-
Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well
Authors:
M. S. Miao,
Q. Yan,
C. G. Van de Walle,
W. K. Lou,
L. L. Li,
K. Chang
Abstract:
Topological insulator (TI) states have been demonstrated in materials with narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k*p Hamiltonian, we show that the intr…
▽ More
Topological insulator (TI) states have been demonstrated in materials with narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k*p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.
△ Less
Submitted 13 May, 2012;
originally announced May 2012.
-
Helical Quantum States in HgTe Quantum Dots with Inverted Band Structures
Authors:
Kai Chang,
W. K. Lou
Abstract:
We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of HgTe quantum dot with an inverted band structure are fully spin-polarized, and show ring-like density distributions near the boundary of the QD and spin-angular momentum locking. The persistent char…
▽ More
We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of HgTe quantum dot with an inverted band structure are fully spin-polarized, and show ring-like density distributions near the boundary of the QD and spin-angular momentum locking. The persistent charge currents and magnetic moments, i.e., the Aharonov-Bohm effect, can be observed in such QD structure and oscillate with increasing magnetic fields. This feature offers us a practical way to detect these exotic ring-like edge states using the SQUID technique.
△ Less
Submitted 20 September, 2011; v1 submitted 20 October, 2010;
originally announced October 2010.
