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Tutorial on Silicon Photonics Integrated Platform Fiber Edge Coupling
Authors:
Sergey S. Avdeev,
Aleksandr S. Baburin,
Evgeniy V. Sergeev,
Alexei B. Kramarenko,
Arseniy V. Belyaev,
Danil V. Kushnev,
Kirill A. Buzaverov,
Ilya A. Stepanov,
Sergey V. Bukatin,
Ali Sh. Amiraslanov,
Evgeniy S. Lotkov,
Dmitriy A. Baklykov,
Ilya A. Rodionov
Abstract:
Photonic integrated circuits (PICs) play a crucial role in almost every aspect of modern life, such as data storage, telecommunications, medical diagnostics, green energy, autonomous driving, agriculture, and high-performance computing. To fully harness their benefits, an efficient coupling mechanism is required to successfully launch light into waveguides from fibers. This study introduces low-lo…
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Photonic integrated circuits (PICs) play a crucial role in almost every aspect of modern life, such as data storage, telecommunications, medical diagnostics, green energy, autonomous driving, agriculture, and high-performance computing. To fully harness their benefits, an efficient coupling mechanism is required to successfully launch light into waveguides from fibers. This study introduces low-loss coupling strategies and their implementation for a silicon nitride integrated platform. Here we present an overview of coupling technologies, optimized designs, and a tutorial on manufacturing techniques for inverted tapers, which enable effective coupling for both transverse-magnetic and transverse-electric modes. The optimized coupling losses for the UHNA-7 fiber and the inverted taper Si3N4 coupler reached -0.81 dB at 1550 nm per connection for single-mode waveguides with 220x1200 nm cross section. The measured coupling losses in the inverted taper coupler with a standard single-mode fiber were -3.28 dB at 1550 nm per connection for the same platform.
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Submitted 20 May, 2024;
originally announced May 2024.
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Silicon nitride integrated photonics from visible to mid-infrared spectra
Authors:
Kirill A. Buzaverov,
Aleksandr S. Baburin,
Evgeny V. Sergeev,
Sergey S. Avdeev,
Evgeniy S. Lotkov,
Sergey V. Bukatin,
Ilya A. Stepanov,
Aleksey B. Kramarenko,
Ali Sh. Amiraslanov,
Danil V. Kushnev,
Ilya A. Ryzhikov,
Ilya A. Rodionov
Abstract:
Recently, silicon nitride (Si3N4) photonic integrated circuits (PICs) are of a great interest due to their extremely low waveguides losses. The number of Si3N4 integrated photonics platform applications is constantly growing including the Internet of Things (IoT), artificial intelligence (AI), light detection and ranging (LiDAR) devices, hybrid neuromorphic and quantum computing. Their heterogeneo…
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Recently, silicon nitride (Si3N4) photonic integrated circuits (PICs) are of a great interest due to their extremely low waveguides losses. The number of Si3N4 integrated photonics platform applications is constantly growing including the Internet of Things (IoT), artificial intelligence (AI), light detection and ranging (LiDAR) devices, hybrid neuromorphic and quantum computing. Their heterogeneous integration with a III-V platform leads to a new advanced large scale PICs with thousands of elements. Here, we review key trends in Si3N4 integrated circuits technology and fill an information gap in the field of state-of-the-art photonic devices operating from visible to mid-infrared spectra. A comprehensive overview of Si3N4 integrared circtuis microfabrication process details (deposition, lithography, etching, etc.) is introduced. Finally, we point out the limits and challenges of silicon nitride photonics performance in an ultrawide range providing routes and prospects for their future scaling and optimization.
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Submitted 16 May, 2024;
originally announced May 2024.
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Aluminum Josephson junction microstructure and electrical properties modification with thermal annealing
Authors:
N. D. Korshakov,
D. O. Moskalev,
A. A. Soloviova,
D. A. Moskaleva,
E. S. Lotkov,
A. R. Ibragimov,
M. V. Androschuk,
I. A. Ryzhikov,
Y. V. Panfilov,
I. A. Rodionov
Abstract:
Superconducting qubits based on Al/AlOx/Al Josephson junction are one of the most promising candidates for the physical implementation of universal quantum computers. Due to scalability and compatibility with the state-of-the-art nanoelectronic processes one can fabricate hundreds of qubits on a single silicon chip. However, decoherence in these systems caused by two-level-systems in amorphous die…
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Superconducting qubits based on Al/AlOx/Al Josephson junction are one of the most promising candidates for the physical implementation of universal quantum computers. Due to scalability and compatibility with the state-of-the-art nanoelectronic processes one can fabricate hundreds of qubits on a single silicon chip. However, decoherence in these systems caused by two-level-systems in amorphous dielectrics, including a tunneling barrier AlOx, is one of the major problems. We report on a Josephson junction thermal annealing process development to crystallize an amorphous barrier oxide (AlOx). The dependences of the thermal annealing parameters on the room temperature resistance are obtained. The developed method allows not only to increase the Josephson junction resistance by 175%, but also to decrease by 60% with precisions of 10% in Rn. Finally, theoretical assumptions about the structure modification in tunnel barrier are proposed. The suggested thermal annealing approach can be used to form a stable and reproducible tunneling barriers and scalable frequency trimming for a widely used fixed-frequency transmon qubits.
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Submitted 4 March, 2024;
originally announced March 2024.
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Integrated membrane-free thermal flow sensor for silicon-on-glass microfluidics
Authors:
Vitaly V. Ryzhkov,
Vladimir V. Echeistov,
Aleksandr V. Zverev,
Dmitry A. Baklykov,
Tatyana Konstantinova,
Evgeny S. Lotkov,
Pavel G. Ryazantcev,
Ruslan Sh. Alibekov,
Aleksey K. Kuguk,
Andrey R. Aleksandrov,
Elisey S. Krasko,
Anastasiya A. Barbasheva,
Ilya A. Ryzhikov,
Ilya A. Rodionov
Abstract:
Lab-on-a-chip (LOC) forms the basis of the new-generation portable analytical systems. LOC allows the manipulation of ultralow flows of liquid reagents and multistep reactions on a microfluidic chip, which requires a robust and precise instrument to control the flow of liquids on a chip. However, commercially available flow meters appear to be a standalone option adding a significant dead volume o…
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Lab-on-a-chip (LOC) forms the basis of the new-generation portable analytical systems. LOC allows the manipulation of ultralow flows of liquid reagents and multistep reactions on a microfluidic chip, which requires a robust and precise instrument to control the flow of liquids on a chip. However, commercially available flow meters appear to be a standalone option adding a significant dead volume of tubes for connection to the chip. Furthermore, most of them cannot be fabricated within the same technological cycle as microfluidic channels. Here, we report on a membrane-free microfluidic thermal flow sensor (MTFS) that can be integrated into a silicon-glass microfluidic chip with a microchannel topology. We propose a membrane-free design with thin-film thermo-resistive sensitive elements isolated from microfluidic channels and 100 mm wafers silicon-glass fabrication route. It ensures MTFS compatibility with corrosive liquids, which is critically important for biological applications. MTFS design rules for the best sensitivity and measurement range are proposed. A method for automated thermo-resistive sensitive elements calibration is described. The device parameters are experimentally tested for hundreds of hours with a reference Coriolis flow sensor demonstrating a relative flow error of less than 5% within the range of 2-30 uL/min along with a sub-second time response.
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Submitted 21 December, 2022;
originally announced December 2022.
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Beyond single-crystalline metals: ultralow-loss silver films on lattice-mismatched substrates
Authors:
Aleksandr S. Baburin,
Dmitriy O. Moskalev,
Evgeniy S. Lotkov,
Olga S. Sorokina,
Dmitriy A. Baklykov,
Sergey S. Avdeev,
Kirill A. Buzaverov,
Georgiy M. Yankovskii,
Alexander V. Baryshev,
Ilya A. Ryzhikov,
Ilya A. Rodionov
Abstract:
High-quality factor plasmonic devices are crucial components in the fields of nanophotonics, quantum computing and sensing. The majority of these devices are required to be fabricated on non-lattice matched or transparent amorphous substrates. Plasmonic devices quality factor is mainly defined by ohmic losses, scattering losses at grain boundaries, and in-plane plasmonic scattering losses of a met…
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High-quality factor plasmonic devices are crucial components in the fields of nanophotonics, quantum computing and sensing. The majority of these devices are required to be fabricated on non-lattice matched or transparent amorphous substrates. Plasmonic devices quality factor is mainly defined by ohmic losses, scattering losses at grain boundaries, and in-plane plasmonic scattering losses of a metal - substrate system. Here, we demonstrate the deposition technique to e-beam evaporate ultralow-loss silver thin films on transparent lattice-mismatched substrates. The process is based on evolutionary selection growth. The key feature of our approach is a well-defined control of deposition on a cooled substrate, self-crystallization and subsequent annealing for precise stress relaxation that promote further grains growth. We are able to deposit 100-nm thick ultraflat polycrystalline silver films with micrometer-scale grains and ultralow optical losses. Finally, we show ultra-high-quality factor plasmonic silver nanostructures on transparent lattice-mismatched substrate comparable to epitaxial silver. This can be of the great interest for high performance or single-molecule optical sensorics applications.
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Submitted 27 October, 2022;
originally announced December 2022.
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Deep multilevel wet etching of fused silica glass microstructures in BOE solution
Authors:
T. G. Konstantinova,
M. M. Andronic,
D. A. Baklykov,
V. E. Stukalova,
D. A. Ezenkova,
E. V. Zikiy,
M. V. Bashinova,
A. A. Solovev,
E. S. Lotkov,
I. A. Ryzhikov,
I. A. Rodionov
Abstract:
Fused silica glass is a material of choice for micromechanical, microfluidic, and optical devices due to its ultimate chemical resistance, optical, electrical, and mechanical performance. Wet etching in hydrofluoric solutions especially a buffered oxide etching (BOE) solution is still the key method for fabricating fused silica glass-based microdevices. It is well known that protective mask integr…
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Fused silica glass is a material of choice for micromechanical, microfluidic, and optical devices due to its ultimate chemical resistance, optical, electrical, and mechanical performance. Wet etching in hydrofluoric solutions especially a buffered oxide etching (BOE) solution is still the key method for fabricating fused silica glass-based microdevices. It is well known that protective mask integrity during deep fused silica wet etching is a big challenge due to chemical stability of fused glass and extremely aggressive BOE properties. Here, we propose a multilevel fused silica glass microstructures fabrication route based on deep wet etching through a stepped mask with just a one grayscale photolithography step. First, we provide a deep comprehensive analysis of a fused quartz dissolution mechanism in BOE solution and calculate the main fluoride fractions like $HF^-_2$, $F^-$, $(HF)_2$ components in a BOE solution as a function of pH and $NH_4F:HF$ ratio at room temperature. Then, we experimentally investigate the influence of BOE concentration ($NH_4F:HF$ from 1:1 to 14:1) on the mask resistance, etch rate and profile isotropy during fused silica 60 minutes etching through a metal/photoresist mask. Finally, we demonstrate a high-quality multilevel over-200 um isotropic wet etching process with the rate up to 3 um/min, which could be of a great interest for advanced fused silica microdevices with flexure suspensions, inertial masses, microchannels, and through-wafer holes.
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Submitted 13 December, 2022;
originally announced December 2022.
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Low-loss silicon nitride photonic ICs for single-photon applications
Authors:
Kirill A. Buzaverov,
Aleksandr S. Baburin,
Evgeny V. Sergeev,
Sergey S. Avdeev,
Evgeniy S. Lotkov,
Mihail Andronik,
Victoria E. Stukalova,
Dmitry A. Baklykov,
Ivan V. Dyakonov,
Nikolay N. Skryabin,
Mikhail Yu. Saygin,
Sergey P. Kulik,
Ilya A. Ryzhikov,
Ilya A. Rodionov
Abstract:
Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report…
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Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report the labs-scale process optimization and optical characterization of low-loss tunable photonic integrated circuits for single-photon applications. We demonstrate the lowest propagation losses to the date (as low as 0.55 dB/cm at 925 nm wavelength) in single-mode silicon nitride submicron waveguides (220x550 nm). This performance is achieved due to advanced e-beam lithography and inductively coupled plasma reactive ion etching steps which yields waveguides vertical sidewalls with down to 0.85 nm sidewall roughness. These results provide a chip-scale low-loss PIC platform that could be even further improved with high quality SiO2 cladding, chemical-mechanical polishing and multistep annealing for extra-strict single-photon applications.
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Submitted 28 October, 2022;
originally announced October 2022.
