Showing 1–7 of 7 results for author: Losert, M P

Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells

Authors: Jan Klos, Jan Tröger, Jens Keutgen, Merritt P. Losert, Helge Riemann, Nikolay V. Abrosimov, Joachim Knoch, Hartmut Bracht, Susan N. Coppersmith, Mark Friesen, Oana Cojocaru-Mirédin, Lars R. Schreiber, Dominique Bougeard

Abstract: Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing… ▽ More Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing times $T_2^{echo}=128 μs$ and valley energy splittings around $200 μeV$ have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing towards the suppression of qubit decoherence through hyperfine interaction or via scattering between valley states. The concentration of nuclear spin-carrying $^{29}$Si is 50 ppm in the $^{28}$Si QW. APT allows to uncover that both the top SiGe/$^{28}$Si and the bottom $^{28}$Si/SiGe interfaces of the QW are shaped by epitaxial growth front segregation signatures on a few monolayer scale. A subsequent thermal treatment broadens the top interface by about two monolayers, while the width of the bottom interface remains unchanged. Using a tight-binding model including SiGe alloy disorder, these experimental results suggest that the combination of the slightly thermally broadened top interface and of a minimal Ge concentration of $0.3 \%$ in the QW, resulting from segregation, is instrumental for the observed large valley splitting. Minimal Ge additions $< 1 \%$, which get more likely in thin QWs, will hence support high valley splitting without compromising coherence times. At the same time, taking thermal treatments during device processing as well as the occurrence of crystal growth characteristics into account seems important for the design of reproducible qubit properties. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Comments: 18 pages, 7 figures

Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder

Authors: Merritt P. Losert, Max Oberländer, Julian D. Teske, Mats Volmer, Lars R. Schreiber, Hendrik Bluhm, S. N. Coppersmith, Mark Friesen

Abstract: Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential. Here, we use simulations to study challenges for spin shuttling in Si/SiGe heterostructures caused by the valley degree of freedom. We show that for devices with va… ▽ More Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential. Here, we use simulations to study challenges for spin shuttling in Si/SiGe heterostructures caused by the valley degree of freedom. We show that for devices with valley splitting dominated by alloy disorder, one can expect to encounter pockets of low valley splitting, given a long-enough shuttling path. At such locations, inter-valley tunneling leads to dephasing of the spin wavefunction, substantially reducing the shuttling fidelity. We show how to mitigate this problem by modifying the heterostructure composition, or by varying the vertical electric field, the shuttling velocity, the shape and size of the dot, or the shuttling path. We further show that combinations of these strategies can reduce the shuttling infidelity by several orders of magnitude, putting shuttling fidelities sufficient for error correction within reach. △ Less

Submitted 23 May, 2024; v1 submitted 2 May, 2024; originally announced May 2024.

Comments: 23 pages, 12 figures

Reducing strain fluctuations in quantum dot devices by gate-layer stacking

Authors: Collin C. D. Frink, Benjamin D. Woods, Merritt P. Losert, E. R. MacQuarrie, M. A. Eriksson, Mark Friesen

Abstract: Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart a complicated strain geometry that affects the confinement potential and potentially impairs device functionality. Here we investigate strain-induced fluctuations of the potential energy in Si/SiGe heterostructures, caused by (i) lattic… ▽ More Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart a complicated strain geometry that affects the confinement potential and potentially impairs device functionality. Here we investigate strain-induced fluctuations of the potential energy in Si/SiGe heterostructures, caused by (i) lattice mismatch, (ii) materials-dependent thermal contraction, and (iii) deposition stress in the metal gates. By simulating different gate geometries, ranging from simple to realistically complicated, and including features like overlap** metal and oxide layers, we can explain most observed strain features. In particular, we show that strain-induced potential fluctuations can be suppressed by employing overlap** gates that cover the whole active region, when the oxide layers are thin. These results suggest that strain effects should not present a serious challenge to qubit uniformity when following simple design rules. △ Less

Submitted 6 January, 2024; v1 submitted 14 December, 2023; originally announced December 2023.

Comments: 13 pages, 9 figures

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells

Authors: Merritt P. Losert, M. A. Eriksson, Robert Joynt, Rajib Rahman, Giordano Scappucci, Susan N. Coppersmith, Mark Friesen

Abstract: Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challenge for ensuring qubit reliability. Broad distributions of valley splittings are commonplace, even among quantum dots formed on the same chip. In this work, we t… ▽ More Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challenge for ensuring qubit reliability. Broad distributions of valley splittings are commonplace, even among quantum dots formed on the same chip. In this work, we theoretically explore the interplay between quantum-well imperfections that suppress the valley splitting and cause variability, such as broadened interfaces and atomic steps at the interface, while self-consistently accounting for germanium concentration fluctuations. We consider both conventional and unconventional approaches for controlling the valley splitting, and present concrete strategies for implementing them. Our results provide a clear path for achieving qubit uniformity in a scalable silicon quantum computer. △ Less

Submitted 11 January, 2024; v1 submitted 4 March, 2023; originally announced March 2023.

Comments: 35 pages, 22 figures

Journal ref: Phys. Rev. B 108, 125405 (2023)

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits

Authors: Thomas McJunkin, Benjamin Harpt, Yi Feng, Merritt P. Losert, Rajib Rahman, J. P. Dodson, M. A. Wolfe, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark Friesen, Robert Joynt, M. A. Eriksson

Abstract: Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new hete… ▽ More Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new heterostructure, the "Wiggle Well," whose key feature is Ge concentration oscillations inside the quantum well. Experimentally, we show that placing Ge in the quantum well does not significantly impact our ability to form and manipulate single-electron quantum dots. We further observe large and widely tunable valley splittings, from 54 to 239 ueV. Tight-binding calculations, and the tunability of the valley splitting, indicate that these results can mainly be attributed to random concentration fluctuations that are amplified by the presence of Ge alloy in the heterostructure, as opposed to a deterministic enhancement due to the concentration oscillations. Quantitative predictions for several other heterostructures point to the Wiggle Well as a robust method for reliably enhancing the valley splitting in future qubit devices. △ Less

Submitted 15 December, 2022; v1 submitted 17 December, 2021; originally announced December 2021.

Comments: Main text and supplemental information, 11 pages, 7 figures

Journal ref: Nature Communications 13, 7777 (2022)

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

Authors: Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling, Lucas E. A. Stehouwer, Anne-Marije J. Zwerver, Stephan G. J. Philips, Mateusz T. Mądzik, Xiao Xue, Guoji Zheng, Mario Lodari, Sergey V. Amitonov, Nodar Samkharadze, Amir Sammak, Lieven M. K. Vandersypen, Rajib Rahman, Susan N. Coppersmith, Oussama Moutanabbir, Mark Friesen, Giordano Scappucci

Abstract: Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processor… ▽ More Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport. We find that the concentration fluctuations of Si and Ge atoms within the 3D landscape of Si/SiGe interfaces can explain the observed large spread of valley splitting from measurements on many quantum dot devices. Against the prevailing belief, we propose to boost these random alloy composition fluctuations by incorporating Ge atoms in the Si quantum well to statistically enhance valley splitting. △ Less

Submitted 1 December, 2022; v1 submitted 17 December, 2021; originally announced December 2021.

Journal ref: Nature Communications 13, 7730 (2022)

Effect of quantum Hall edge strips on valley splitting in silicon quantum wells

Authors: Brian Paquelet Wuetz, Merritt P. Losert, Alberto Tosato, Mario Lodari, Peter L. Bavdaz, Lucas Stehouwer, Payam Amin, James S. Clarke, Susan N. Coppersmith, Amir Sammak, Menno Veldhorst, Mark Friesen, Giordano Scappucci

Abstract: We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases… ▽ More We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with $B$ and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density $eB/h$ across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 $μ$eV/10$^{11}$cm$^{-2}$, consistent with theoretical predictions for near-perfect quantum well top interfaces. △ Less

Submitted 29 September, 2020; v1 submitted 3 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. Lett. 125, 186801 (2020)