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The interplay between electron tunneling and Auger emission in a single quantum emitter weakly coupled to an electron reservoir
Authors:
Marcel Zöllner,
Hendrik Mannel,
Fabio Rimek,
Britta Maib,
Nico Schwarz,
Andreas D. Wieck,
Arne Ludwig,
Axel Lorke,
Martin Geller
Abstract:
In quantum dots (QDs) the Auger recombination is a non-radiative scattering process in which the optical transition energy of a charged exciton (trion) is transferred to an additional electron leaving the dot. Electron tunneling from a reservoir is the competing process that replenishes the QD with an electron again. Here, we study the dependence of the tunneling and Auger recombintaion rate on th…
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In quantum dots (QDs) the Auger recombination is a non-radiative scattering process in which the optical transition energy of a charged exciton (trion) is transferred to an additional electron leaving the dot. Electron tunneling from a reservoir is the competing process that replenishes the QD with an electron again. Here, we study the dependence of the tunneling and Auger recombintaion rate on the applied electric field using high-resolution time-resolved resonance fluorescence (RF) measurements. With the given p-i-n diode structure and a tunnel barrier between the electron reservoir and the QD of $45\,$nm, we measured a tunneling rate into the QD in the order of ms$^{-1}$. This rate shows a strong decrease by almost an order of magnitude for decreasing electric field, while the Auger emission rate decreases by a factor of five in the same voltage range. Furthermore, we study in detail the influence of the Auger recombination and the tunneling rate from the charge reservoir into the QD on the intensity and linewidth of the trion transition. Besides the well-known quenching of the trion transition, we observe in our time-resolved RF measurements a strong influence of the tunneling rate on the observed linewidth. The steady-state RF measurement yields a broadened trion transition of about $1.5\,$GHz for an Auger emission rate of the same order as the electron tunneling rate. In a non-equilibrium measurement, the Auger recombination can be suppressed, and a more than four times smaller linewidth of $340\,$MHz ($1.4\,$$μ$eV) is measured.
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Submitted 20 October, 2023;
originally announced October 2023.
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Making Every Photon Count: A Quantum Polyspectra Approach to the Dynamics of Blinking Quantum Emitters at Low Photon Rates Without Binning
Authors:
M. Sifft,
A. Kurzmann,
J. Kerski,
R. Schott,
A. Ludwig,
A. D. Wieck,
A. Lorke,
M. Geller,
D. Hägele
Abstract:
The blinking statistics of quantum emitters and their corresponding Markov models play an important role in high resolution microscopy of biological samples as well as in nano-optoelectronics and many other fields of science and engineering. Current methods for analyzing the blinking statistics like the full counting statistics or the Viterbi algorithm break down for low photon rates. We present a…
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The blinking statistics of quantum emitters and their corresponding Markov models play an important role in high resolution microscopy of biological samples as well as in nano-optoelectronics and many other fields of science and engineering. Current methods for analyzing the blinking statistics like the full counting statistics or the Viterbi algorithm break down for low photon rates. We present an evaluation scheme that eliminates the need for both a minimum photon flux and the usual binning of photon events which limits the measurement bandwidth. Our approach is based on higher order spectra of the measurement record which we model within the recently introduced method of quantum polyspectra from the theory of continuous quantum measurements. By virtue of this approach we can determine on- and off-switching rates of a semiconductor quantum dot at light levels 1000 times lower than in a standard experiment and 20 times lower than achieved with a scheme from full counting statistics. Thus a very powerful high-bandwidth approach to the parameter learning task of single photon hidden Markov models has been established with applications in many fields of science.
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Submitted 19 May, 2024; v1 submitted 16 October, 2023;
originally announced October 2023.
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Spatio-Temporal Electron Propagation Dynamics in Au/Fe/MgO(001) in nonequilibrium: Revealing Single Scattering Events and the Ballistic Limit
Authors:
Markus Heckschen,
Yasin Beyazit,
Elaheh Shomali,
Florian Kühne,
Jesumony Jayabalan,
** Zhou,
Detlef Diesing,
Markus E. Gruner,
Rossitza Pentcheva,
Axel Lorke,
Björn Sothmann,
Uwe Bovensiepen
Abstract:
Understanding the microscopic spatio-temporal dynamics of nonequilibrium charge carriers in heterosystems promises optimization of process and device design towards desired energy transfer. Hot electron transport is governed by scattering with other electrons, defects, and bosonic excitations. Analysis of the energy dependence of scattering pathways and identification of diffusive, super-diffusive…
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Understanding the microscopic spatio-temporal dynamics of nonequilibrium charge carriers in heterosystems promises optimization of process and device design towards desired energy transfer. Hot electron transport is governed by scattering with other electrons, defects, and bosonic excitations. Analysis of the energy dependence of scattering pathways and identification of diffusive, super-diffusive, and ballistic transport regimes are current challenges. We determine in femtosecond time-resolved two-photon photoelectron emission spectroscopy the energy-dependent change of the electron propagation time through epitaxial Au/Fe(001) heteostructures as a function of Au layer thickness for energies of 0.5 to \unit[2.0]{eV} above the Fermi energy. We describe the laser-induced nonequilibrium electron excitation and injection across the Fe/Au interface using real-time time-dependent density functional theory and analyze the electron propagation through the Au layer by microscopic electron transport simulations. We identify ballistic transport of minority electrons at energies with a nascent, optically excited electron population which is determined by the combination of photon energy and the specific electronic structure of the material. At lower energy, super-diffusive transport with 1 to 4 scattering events dominates. The effective electron velocity accelerates from 0.3 to \unit[1]{nm/fs} with an increase in the Au layer thickness from 10 to 100~nm. This phenomenon is explained by electron transport that becomes preferentially aligned with the interface normal for thicker Au layers, which facilitates electron momentum / energy selection by choice of the propagation layer thickness.
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Submitted 22 June, 2023;
originally announced June 2023.
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Unraveling spin dynamics from charge fluctuations
Authors:
Eric Kleinherbers,
Hendrik Mannel,
Jens Kerski,
Martin Geller,
Axel Lorke,
Jürgen König
Abstract:
The use of single electron spins in quantum dots as qubits requires detailed knowledge about the processes involved in their initialization and operation as well as their relaxation and decoherence. In optical schemes for such spin qubits, spin-flip Raman as well as Auger processes play an important role, in addition to environment-induced spin relaxation. In this paper, we demonstrate how to quan…
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The use of single electron spins in quantum dots as qubits requires detailed knowledge about the processes involved in their initialization and operation as well as their relaxation and decoherence. In optical schemes for such spin qubits, spin-flip Raman as well as Auger processes play an important role, in addition to environment-induced spin relaxation. In this paper, we demonstrate how to quantitatively access all the spin-related processes in one go by monitoring the charge fluctuations of the quantum dot. For this, we employ resonance fluorescence and analyze the charge fluctuations in terms of waiting-time distributions and full counting statistics characterized by factorial cumulants.
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Submitted 24 May, 2023;
originally announced May 2023.
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Quantum Zeno Manipulation of Quantum Dots
Authors:
N. Ahmadiniaz,
M. Geller,
J. König,
P. Kratzer,
A. Lorke,
G. Schaller,
R. Schützhold
Abstract:
We investigate whether and how the quantum Zeno effect, i.e., the inhibition of quantum evolution by frequent measurements, can be employed to isolate a quantum dot from its surrounding electron reservoir. In contrast to the often studied case of tunneling between discrete levels, we consider the tunnelling of an electron from a continuum reservoir to a discrete level in the dot. Realizing the qua…
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We investigate whether and how the quantum Zeno effect, i.e., the inhibition of quantum evolution by frequent measurements, can be employed to isolate a quantum dot from its surrounding electron reservoir. In contrast to the often studied case of tunneling between discrete levels, we consider the tunnelling of an electron from a continuum reservoir to a discrete level in the dot. Realizing the quantum Zeno effect in this scenario can be much harder because the measurements should be repeated before the wave packet of the hole left behind in the reservoir moves away from the vicinity of the dot. Thus, the required repetition rate could be lowered by having a flat band (with a slow group velocity) in resonance with the dot or a sufficiently small Fermi velocity or a strong external magnetic field. We also consider the anti-Zeno effect, i.e., how measurements can accelerate or enable quantum evolution.
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Submitted 27 August, 2022; v1 submitted 27 January, 2022;
originally announced January 2022.
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Post-processing of real-time quantum event measurements for an optimal bandwidth
Authors:
Jens Kerski,
Hendrik Mannel,
Pia Lochner,
Eric Kleinherbers,
Annika Kurzmann,
Arne Ludwig,
Andreas D. Wieck,
Jürgen König,
Axel Lorke,
Martin Geller
Abstract:
Single electron tunneling and its transport statistics have been studied for some time using high precision charge detectors. However, this type of detection requires advanced lithography, optimized material systems and low temperatures (mK). A promising alternative, recently demonstrated, is to exploit an optical transition that is turned on or off when a tunnel event occurs. High bandwidths shou…
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Single electron tunneling and its transport statistics have been studied for some time using high precision charge detectors. However, this type of detection requires advanced lithography, optimized material systems and low temperatures (mK). A promising alternative, recently demonstrated, is to exploit an optical transition that is turned on or off when a tunnel event occurs. High bandwidths should be achievable with this approach, although this has not been adequately investigated so far. We have studied low temperature resonance fluorescence from a self-assembled quantum dot embedded in a diode structure. We detect single photons from the dot in real time and evaluate the recorded data only after the experiment, using post-processing to obtain the random telegraph signal of the electron transport. This is a significant difference from commonly used charge detectors and allows us to determine the optimal time resolution for analyzing our data. We show how this post-processing affects both the determination of tunneling rates using waiting-time distributions and statistical analysis using full-counting statistics. We also demonstrate, as an example, that we can analyze our data with bandwidths as high as 350 kHz. Using a simple model, we discuss the limiting factors for achieving the optimal bandwidth and propose how a time resolution of more than 1 MHz could be achieved.
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Submitted 14 December, 2021;
originally announced December 2021.
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Auger and spin dynamics in a self-assembled quantum dot
Authors:
Hendrik Mannel,
Jens Kerski,
Pia Lochner,
Marcel Zöllner,
Andreas D. Wieck,
Arne Ludwig,
Axel Lorke,
Martin Geller
Abstract:
The Zeeman-split spin states of a single quantum dot can be used together with its optical trion transitions to form a spin-photon interface between a stationary (the spin) and a flying (the photon) quantum bit. Besides long coherence times of the spin state itself, the limiting decoherence mechanisms of the trion states are of central importance. We investigate here in time-resolved resonance flu…
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The Zeeman-split spin states of a single quantum dot can be used together with its optical trion transitions to form a spin-photon interface between a stationary (the spin) and a flying (the photon) quantum bit. Besides long coherence times of the spin state itself, the limiting decoherence mechanisms of the trion states are of central importance. We investigate here in time-resolved resonance fluorescence the electron and trion dynamics in a single self-assembled quantum dot in an applied magnetic field of up to $B = 10\,$T. The quantum dot is only weakly coupled to an electron reservoir with tunneling rates of about $1\,$ms$^{-1}$. Using this sample structure, we can measure, in addition to the spin-flip rate of the electron and the spin-flip Raman rate of the trion transition, the Auger recombination process, that scatters an Auger electron into the conduction band. The Auger effect destroys the radiative trion transition and leaves the quantum dot empty until an electron tunnels from the reservoir into the dot. The Auger recombination rate decreases by a factor of three from $γ_A=3\,μ$s$^{-1}$ down to $1\,μ$s$^{-1}$ in an applied magnetic field of $10\,$T in Faraday geometry. The combination of an Auger recombination event with subsequent electron tunneling from the reservoir can flip the electron spin and thus constitutes a previously unaccounted mechanism that limits spin coherence, an important resource for quantum technologies.
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Submitted 23 October, 2021;
originally announced October 2021.
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Electronic reconstruction and charge transfer in strained Sr$_2$CoIrO$_6$ double perovskite
Authors:
Jiongyao Wu,
Marcel Ney,
Sebastian Esser,
Vijaya Begum,
Günther Prinz,
Axel Lorke,
Philipp Gegenwart,
Rossitza Pentcheva
Abstract:
The electronic, magnetic and optical properties of the double perovskite Sr$_2$CoIrO$_6$ (SCIO) under biaxial strain are explored in the framework of density functional theory (DFT) including a Hubbard $U$ term and spin-orbit coupling (SOC) in combination with absorption spectroscopy measurements on epitaxial thin films. While the end member SrIrO$_3$ is a semimetal with a quenched spin and orbita…
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The electronic, magnetic and optical properties of the double perovskite Sr$_2$CoIrO$_6$ (SCIO) under biaxial strain are explored in the framework of density functional theory (DFT) including a Hubbard $U$ term and spin-orbit coupling (SOC) in combination with absorption spectroscopy measurements on epitaxial thin films. While the end member SrIrO$_3$ is a semimetal with a quenched spin and orbital moment and bulk SrCoO$_3$ is a ferromagnetic (FM) metal with spin and orbital moment of 2.50 and 0.13 $μ_{B}$, respectively, the double perovskite SCIO emerges as an antiferromagnetic Mott insulator with antiparallel alignment of Co, Ir planes along the [110]-direction. Co exhibits a spin and enhanced orbital moment of $\sim 2.35-2.45$ and $0.31-$0.45 $μ_{B}$, respectively. Most remarkably, Ir acquires a significant spin and orbital moment of 1.21-1.25 and 0.13 $μ_{B}$, respectively. Analysis of the orbital occupation indicates an electronic reconstruction due to a substantial charge transfer from minority to majority spin states in Ir and from Ir to Co, signaling an Ir$^{4+δ}$, Co$^{4-δ}$ configuration. Biaxial strain, varied from -1.02% ($a_{\rm NdGaO_3}$) through 0% ($a_{\rm SrTiO_3}$) to 1.53% ($a_{\rm GdScO_3}$), influences in partcular the orbital polarization of the $t_{2g}$ states and leads to a nonmonotonic change of the band gap between 163 and 235 meV. The absorption coefficient reveals a two plateau fearure due to transitions from the valence to the lower lying narrow $t_{2g}$ and the higher lying broader $e_{g}$ bands. Inclusion of many body effects, in particular, excitonic effects by solving the Bethe-Salpeter equation (BSE), increases the band gap by $\sim0.2$ and improves the agreement with the measured spectrum concerning the position of the second peak at $\sim 2.6$ eV.
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Submitted 19 October, 2021;
originally announced October 2021.
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Pushing the limits in real-time measurements of quantum dynamics
Authors:
Eric Kleinherbers,
Philipp Stegmann,
Annika Kurzmann,
Martin Geller,
Axel Lorke,
Jürgen König
Abstract:
Time-resolved studies of quantum systems are the key to understand quantum dynamics at its core. The real-time measurement of individual quantum numbers as they switch between certain discrete values, well known as random telegraph signal, is expected to yield maximal physical insight. However, the signal suffers from both systematic errors, such as a limited time resolution and noise from the mea…
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Time-resolved studies of quantum systems are the key to understand quantum dynamics at its core. The real-time measurement of individual quantum numbers as they switch between certain discrete values, well known as random telegraph signal, is expected to yield maximal physical insight. However, the signal suffers from both systematic errors, such as a limited time resolution and noise from the measurement apparatus, as well as statistical errors due to a limited amount of data. Here we demonstrate that an evaluation scheme based on factorial cumulants can reduce the influence of such errors by orders of magnitude. The error resilience is supported by a general theory for the detection errors as well as experimental data of single-electron tunnelling through a self-assembled quantum dot. Thus, factorial cumulants push the limits in the analysis of random telegraph data which represent a wide class of experiments in physics, chemistry, engineering and life sciences.
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Submitted 25 February, 2022; v1 submitted 23 June, 2021;
originally announced June 2021.
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Quantum polyspectra for modeling and evaluating quantum transport measurements: A unifying approach to the strong and weak measurement regime
Authors:
M. Sifft,
A. Kurzmann,
J. Kerski,
R. Schott,
A. Ludwig,
A. D. Wieck,
A. Lorke,
M. Geller,
D. Hägele
Abstract:
Quantum polyspectra of up to fourth order are introduced for modeling and evaluating quantum transport measurements offering a powerful alternative to methods of the traditional full counting statistics. Experimental time-traces of the occupation dynamics of a single quantum dot are evaluated via simultaneously fitting their 2nd-, 3rd-, and 4th-order spectra. The scheme recovers the same electron…
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Quantum polyspectra of up to fourth order are introduced for modeling and evaluating quantum transport measurements offering a powerful alternative to methods of the traditional full counting statistics. Experimental time-traces of the occupation dynamics of a single quantum dot are evaluated via simultaneously fitting their 2nd-, 3rd-, and 4th-order spectra. The scheme recovers the same electron tunneling and spin relaxation rates as previously obtained from an analysis of the same data in terms of factorial cumulants of the full counting statistics and waiting-time distributions. Moreover, the evaluation of time-traces via quantum polyspectra is demonstrated to be feasible also in the weak measurement regime even when quantum jumps can no longer be identified from time-traces and methods related to the full counting statistics cease to be applicable. A numerical study of a double dot system shows strongly changing features in the quantum polyspectra for the transition from the weak measurement regime to the Zeno-regime where coherent tunneling dynamics is suppressed. Quantum polyspectra thus constitute a general unifying approach to the strong and weak regime of quantum measurements with possible applications in diverse fields as nano-electronics, circuit quantum electrodynamics, spin noise spectroscopy, or quantum optics.
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Submitted 28 June, 2021; v1 submitted 16 November, 2020;
originally announced November 2020.
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Internal Photo Effect from a Single Quantum Emitter
Authors:
Pia Lochner,
Jens Kerski,
Annika Kurzmann,
Andreas D. Wieck,
Arne Ludwig,
Martin Geller,
Axel Lorke
Abstract:
We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically generated emission rate on the excitation intensity and use a rate equation model to deduce the involved rates. The emission rate is tunable over several orders…
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We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically generated emission rate on the excitation intensity and use a rate equation model to deduce the involved rates. The emission rate is tunable over several orders of magnitude by adjusting the excitation intensity. Our findings show that a process that is well known in single atom spectroscopy (i.e. photo ionization) can also be observed in the solid state. The results also quantify an important, but mostly neglected, mechanism that may fundamentally limit the coherence times in solid-state quantum optical devices.
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Submitted 21 October, 2020;
originally announced October 2020.
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Real-time detection of every Auger recombination in a self-assembled quantum dot
Authors:
Pia Lochner,
Annika Kurzmann,
Jens Kerski,
Philipp Stegmann,
Jürgen König,
Andreas D. Wieck,
Arne Ludwig,
Axel Lorke,
Martin Geller
Abstract:
Auger recombination is a non-radiative process, where the recombination energy of an electron-hole pair is transferred to a third charge carrier. It is a common effect in colloidal quantum dots that quenches the radiative emission with an Auger recombination time below nanoseconds. In self-assembled QDs, the Auger recombination has been observed with a much longer recombination time in the order o…
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Auger recombination is a non-radiative process, where the recombination energy of an electron-hole pair is transferred to a third charge carrier. It is a common effect in colloidal quantum dots that quenches the radiative emission with an Auger recombination time below nanoseconds. In self-assembled QDs, the Auger recombination has been observed with a much longer recombination time in the order of microseconds. Here, we use two-color laser excitation on the exciton and trion transition in resonance fluorescence on a single self-assembled quantum dot to monitor in real-time every quantum event of the Auger process. Full counting statistics on the random telegraph signal give access to the cumulants and demonstrate the tunability of the Fano factor from a Poissonian to a sub-Poissonian distribution by Auger-mediated electron emission from the dot. Therefore, the Auger process can be used to tune optically the charge carrier occupation of the dot by the incident laser intensity; independently from the electron tunneling from the reservoir by the gate voltage. Our findings are not only highly relevant for the understanding of the Auger process, it also demonstrates the perspective of the Auger effect for controlling precisely the charge state in a quantum system by optical means.
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Submitted 13 November, 2019; v1 submitted 12 November, 2019;
originally announced November 2019.
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Patterning of diamond with 10 nm resolution by electron-beam-induced etching
Authors:
Vasilis Dergianlis,
Martin Geller,
Dennis Oing,
Nicolas Woehrl,
Axel Lorke
Abstract:
We report on mask-less, high resolution etching of diamond surfaces, featuring sizes down to 10 nm. We use a scanning electron microscope (SEM) together with water vapor, which was injected by a needle directly onto the sample surface. Using this versatile and low-damage technique, trenches with different depths were etched. Cross sections of each trench were obtained by focused ion beam milling a…
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We report on mask-less, high resolution etching of diamond surfaces, featuring sizes down to 10 nm. We use a scanning electron microscope (SEM) together with water vapor, which was injected by a needle directly onto the sample surface. Using this versatile and low-damage technique, trenches with different depths were etched. Cross sections of each trench were obtained by focused ion beam milling and used to calculate the achieved aspect ratios. The developed technique opens up the possibility of mask- and resist-less patterning of diamond for nano-optical and electronic applications.
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Submitted 26 March, 2019;
originally announced March 2019.
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Optical detection of single electron transport dynamics
Authors:
A. Kurzmann,
P. Stegmann,
J. Kerski,
R. Schott,
A. Ludwig,
A. D. Wieck,
J. König,
A. Lorke,
M. Geller
Abstract:
The unpredictability of a single quantum event lies at the very core of quantum mechanics. Physical information is therefore drawn from a statistical evaluation of many such processes. Nevertheless, recording each single quantum event in a time trace the "random telegraph signal" is of great value, as it allows insight into the underlying physical system. Here, quantum dots have proven to be well…
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The unpredictability of a single quantum event lies at the very core of quantum mechanics. Physical information is therefore drawn from a statistical evaluation of many such processes. Nevertheless, recording each single quantum event in a time trace the "random telegraph signal" is of great value, as it allows insight into the underlying physical system. Here, quantum dots have proven to be well suited systems, as they exhibit both single photon emission and single electron charge transport. While single photon emission is generally studied on self-assembled quantum dots, single electron transport studies are focused on gate-defined structures. We investigate, on a single self-assembled quantum dot, the single electron transport in the optical telegraph signal with high bandwidth and observe in the full counting statistics the interplay between charge and spin dynamics in a noninvasive way. In particular, we are able to identify the spin relaxation of the Zeeman-split quantum-dot level in the charge statistics.
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Submitted 9 March, 2021; v1 submitted 18 December, 2018;
originally announced December 2018.
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Photon noise suppression by a built-in feedback loop
Authors:
A. Al-Ashouri,
A. Kurzmann,
B. Merkel,
A. Ludwig,
A. D. Wieck,
A. Lorke,
M. Geller
Abstract:
Visionary quantum photonic networks need transform-limited single photons on demand. Resonance fluorescence on a quantum dot provides the access to a solid-state single photon source, where the environment is unfortunately the source of spin and charge noise that leads to fluctuations of the emission frequency and destroys the needed indistinguishability. We demonstrate a built-in stabilization ap…
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Visionary quantum photonic networks need transform-limited single photons on demand. Resonance fluorescence on a quantum dot provides the access to a solid-state single photon source, where the environment is unfortunately the source of spin and charge noise that leads to fluctuations of the emission frequency and destroys the needed indistinguishability. We demonstrate a built-in stabilization approach for the photon stream, which relies solely on charge carrier dynamics of a two-dimensional hole gas inside a micropillar structure. The hole gas is fed by hole tunneling from field-ionized excitons and influences the energetic position of the excitonic transition by changing the local electric field at the position of the quantum dot. The standard deviation of the photon noise is suppressed by nearly 50 percent (noise power reduction of 6 dB) and it works in the developed micropillar structure for frequencies up to 1 kHz. This built-in feedback loop represents an easy way for photon noise suppression in large arrays of single photon emitters and promises to reach higher bandwidth by device optimization.
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Submitted 17 July, 2018;
originally announced July 2018.
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A charge-driven feedback loop in the resonance fluorescence of a single quantum dot
Authors:
B. Merkel,
A. Kurzmann,
J. -H. Schulze,
A. Strittmatter,
M. Geller,
A. Lorke
Abstract:
Semiconductor quantum dots can emit antibunched, single photons on demand with narrow linewidths. However, the observed linewidths are broader than lifetime measurements predict, due to spin and charge noise in the environment. This noise randomly shifts the transition energy and destroys coherence and indistinguishability of the emitted photons. Fortunately, the fluctuations can be reduced by a s…
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Semiconductor quantum dots can emit antibunched, single photons on demand with narrow linewidths. However, the observed linewidths are broader than lifetime measurements predict, due to spin and charge noise in the environment. This noise randomly shifts the transition energy and destroys coherence and indistinguishability of the emitted photons. Fortunately, the fluctuations can be reduced by a stabilization using a suitable feedback loop. In this work we demonstrate a fast feedback loop that manifests itself in a strong hysteresis and bistability of the exciton resonance fluorescence signal. Field ionization of photogenerated quantum dot excitons leads to the formation of a charged interface layer that drags the emission line along over a frequency range of more than 30 GHz. This internal charge-driven feedback loop could be used to reduce the spectral diffusion and stabilize the emission frequency within milliseconds, presently only limited by the sample structure, but already faster than nuclear spin feedback.
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Submitted 10 June, 2016;
originally announced June 2016.
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Photoelectron generation and capture in the resonance fluorescence of a quantum dot
Authors:
Annika Kurzmann,
Arne Ludwig,
Andreas D. Wieck,
Axel Lorke,
Martin Geller
Abstract:
Time-resolved resonance fluorescence (RF) on a single self-assembled quantum dot (QD) is used to analyze the generation and capture of photoinduced free charge carriers. We directly observe the capture of electrons into the QD in an intensity reduction of the exciton transition. The exciton transition is quenched until the captured electron tunnels out of the dot again in the order of milliseconds…
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Time-resolved resonance fluorescence (RF) on a single self-assembled quantum dot (QD) is used to analyze the generation and capture of photoinduced free charge carriers. We directly observe the capture of electrons into the QD in an intensity reduction of the exciton transition. The exciton transition is quenched until the captured electron tunnels out of the dot again in the order of milliseconds. Our results demonstrate that even under resonant excitation, excited, free electrons are generated, which can negatively influence the optical properties of a QD. This detrimental effect has been neglected before for dots that are optimized for maximum efficiency and minimum spectral diffusion.
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Submitted 26 April, 2016;
originally announced April 2016.
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Auger recombination in self-assembled quantum dots: Quenching and broadening of the charged exciton transition
Authors:
Annika Kurzmann,
Arne Ludwig,
Andreas D. Wieck,
Axel Lorke,
Martin Geller
Abstract:
In quantum dots (QDs) the Auger recombination is a non-radiative process, where the electron-hole recombination energy is transferred to an additional carrier. It has been studied mostly in colloidal QDs, where the Auger recombination time is in the ps range and efficiently quenches the light emission. In self-assembled QDs, on the other hand, the influence of Auger recombination on the optical pr…
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In quantum dots (QDs) the Auger recombination is a non-radiative process, where the electron-hole recombination energy is transferred to an additional carrier. It has been studied mostly in colloidal QDs, where the Auger recombination time is in the ps range and efficiently quenches the light emission. In self-assembled QDs, on the other hand, the influence of Auger recombination on the optical properties is in general neglected, assuming that it is masked by other processes such as spin and charge fluctuations. Here, we use time-resolved resonance fluorescence to analyze the Auger recombination and its influence on the optical properties of a single self-assembled QD. From excitation-power dependent measurements, we find a long Auger recombination time of about 500 ns and a quenching of the trion transition by about 80 percent. Furthermore, we observe a broadening of the trion transition linewidth by up to a factor of two. With a model based on rate equations, we are able to identify the interplay between tunneling and Auger rate as the underlying mechanism for the reduced intensity and the broadening of the linewidth. This demonstrates that self-assembled QDs can serve as an ideal model system to study how the charge recapture process, given by the band-structure surrounding the confined carriers, influences the Auger process. Our findings are not only relevant for improving the emission properties of colloidal QD-based emitters and dyes, which have recently entered the consumer market. They are also of interest for more visionary applications, such as quantum information technologies, based on self-assembled quantum dots.
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Submitted 16 March, 2016;
originally announced March 2016.
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Optical blocking of electron tunneling into a single self-assembled quantum dot
Authors:
A. Kurzmann,
B. Merkel,
P. A. Labud,
A. Ludwig,
A. D. Wieck,
A. Lorke,
M. Geller
Abstract:
Time-resolved resonance fluorescence (RF) is used to analyse electron tunneling between a single self-assembled quantum dot (QD) and an electron reservoir. In equilibrium, the RF intensity reflects the average electron occupation of the QD and exhibits a gate voltage dependence that is given by the Fermi distribution in the reservoir. In the time-resolved signal, however, we find that the relaxati…
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Time-resolved resonance fluorescence (RF) is used to analyse electron tunneling between a single self-assembled quantum dot (QD) and an electron reservoir. In equilibrium, the RF intensity reflects the average electron occupation of the QD and exhibits a gate voltage dependence that is given by the Fermi distribution in the reservoir. In the time-resolved signal, however, we find that the relaxation rate for electron tunneling is independent of the occupation in the charge reservoir. Using a master equation approach which includes both the electron tunneling and the optical excitation/recombination, we are able to explain the experimental data by optical blocking, i. e. a reduced electron tunneling rate when the QD is occupied by an exciton.
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Submitted 1 March, 2016; v1 submitted 28 May, 2015;
originally announced May 2015.
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Giant magneto-photoelectric effect in suspended graphene
Authors:
Jens Sonntag,
Annika Kurzmann,
Martin Geller,
Friedemann Queisser,
Axel Lorke,
Ralf Schützhold
Abstract:
We study the optical response of a suspended graphene field-effect transistor in magnetic fields of up to 9 T (quantum Hall regime). With an illumination power of only 3 μW, we measure a photocurrent of up to 400 nA, corresponding to a photo-responsivity of 0.14 A/W, which we believe to be the highest value ever measured in single-layer graphene. We estimate that every absorbed photon creates more…
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We study the optical response of a suspended graphene field-effect transistor in magnetic fields of up to 9 T (quantum Hall regime). With an illumination power of only 3 μW, we measure a photocurrent of up to 400 nA, corresponding to a photo-responsivity of 0.14 A/W, which we believe to be the highest value ever measured in single-layer graphene. We estimate that every absorbed photon creates more than 8 electron-hole pairs, which demonstrates highly effective carrier multiplication. As suggested by the dependence of the photocurrent on gate voltage and magnetic field, we propose a ballistic two-stage mechanism where the incident photons create primary charge carriers which then excite secondary charge carriers in the chiral edge states via Auger-type inelastic Coulomb scattering processes at the graphene edge.
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Submitted 22 May, 2015; v1 submitted 7 May, 2015;
originally announced May 2015.
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Analog Sauter-Schwinger effect in semiconductors for spacetime-dependent fields
Authors:
Malte F. Linder,
Axel Lorke,
Ralf Schützhold
Abstract:
The Sauter-Schwinger effect predicts the creation of electron-positron pairs out of the quantum vacuum via tunneling induced by a strong electric field. Unfortunately, as the required field strength is extremely large, this fundamental prediction of quantum field theory has not been verified experimentally yet. Here, we study under which conditions and approximations the interband tunneling in sui…
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The Sauter-Schwinger effect predicts the creation of electron-positron pairs out of the quantum vacuum via tunneling induced by a strong electric field. Unfortunately, as the required field strength is extremely large, this fundamental prediction of quantum field theory has not been verified experimentally yet. Here, we study under which conditions and approximations the interband tunneling in suitable semiconductors could be effectively governed by the same (Dirac) Hamiltonian, especially for electric fields which depend on space and time. This quantitative analogy would allow us to test some of the predictions (such as the dynamically assisted Sauter-Schwinger effect) in this area by means of these laboratory analogs.
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Submitted 16 January, 2018; v1 submitted 24 March, 2015;
originally announced March 2015.
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Edge magnetotransport in graphene: A combined analytical and numerical study
Authors:
Thomas Stegmann,
Axel Lorke
Abstract:
The current flow along the boundary of graphene stripes in a perpendicular magnetic field is studied theoretically by the nonequilibrium Green's function method. In the case of specular reflections at the boundary, the Hall resistance shows equidistant peaks, which are due to classical cyclotron motion. When the strength of the magnetic field is increased, anomalous resistance oscillations are obs…
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The current flow along the boundary of graphene stripes in a perpendicular magnetic field is studied theoretically by the nonequilibrium Green's function method. In the case of specular reflections at the boundary, the Hall resistance shows equidistant peaks, which are due to classical cyclotron motion. When the strength of the magnetic field is increased, anomalous resistance oscillations are observed, similar to those found in a nonrelativistic 2D electron gas [New. J. Phys. 15:113047 (2013)]. Using a simplified model, which allows to solve the Dirac equation analytically, the oscillations are explained by the interference between the occupied edge states causing beatings in the Hall resistance. A rule of thumb is given for the experimental observability. Furthermore, the local current flow in graphene is affected significantly by the boundary geometry. A finite edge current flows on armchair edges, while the current on zigzag edges vanishes completely. The quantum Hall staircase can be observed in the case of diffusive boundary scattering. The number of spatially separated edge channels in the local current equals the number of occupied Landau levels. The edge channels in the local density of states are smeared out but can be made visible if only a subset of the carbon atoms is taken into account.
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Submitted 12 November, 2015; v1 submitted 17 February, 2015;
originally announced February 2015.
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Asymmetry of charge relaxation times in quantum dots: The influence of degeneracy
Authors:
Andreas Beckel,
Annika Kurzmann,
Martin Geller,
Arne Ludwig,
Andreas D. Wieck,
Jürgen König,
Axel Lorke
Abstract:
Using time-resolved transconductance spectroscopy, we study the tunneling dynamics between a two-dimensional electron gas (2DEG) and self-assembled quantum dots (QDs), embedded in a field-effect transistor structure. We find that the tunneling of electrons from the 2DEG into the QDs is governed by a different time constant than the reverse process, i.e., tunneling from the QDs to the 2DEG. This as…
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Using time-resolved transconductance spectroscopy, we study the tunneling dynamics between a two-dimensional electron gas (2DEG) and self-assembled quantum dots (QDs), embedded in a field-effect transistor structure. We find that the tunneling of electrons from the 2DEG into the QDs is governed by a different time constant than the reverse process, i.e., tunneling from the QDs to the 2DEG. This asymmetry is a clear signature of Coulomb interaction and makes it possible to determine the degeneracy of the quantum dot orbitals even when the individual states cannot be resolved energetically because of inhomogeneous broadening. Our experimental data can be qualitatively explained within a master-equation approach.
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Submitted 23 May, 2014; v1 submitted 24 February, 2014;
originally announced February 2014.
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The role of the ligand layer for photoluminescence spectral diffusion of CdSe/ZnS nanoparticles
Authors:
Daniel Braam,
Andreas Mölleken,
Günther M. Prinz,
Christian Notthoff,
Martin Geller,
Axel Lorke
Abstract:
The time-resolved photoluminescence (PL) characteristics of single CdSe/ZnS nanoparticles, embedded in a PMMA layer is studied at room temperature. We observe a strong spectral jitter of up to 55 meV, which is correlated with a change in the observed linewidth. We evaluate this correlation effect using a simple model, based on the quantum confined Stark effect induced by a diffusing charge in the…
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The time-resolved photoluminescence (PL) characteristics of single CdSe/ZnS nanoparticles, embedded in a PMMA layer is studied at room temperature. We observe a strong spectral jitter of up to 55 meV, which is correlated with a change in the observed linewidth. We evaluate this correlation effect using a simple model, based on the quantum confined Stark effect induced by a diffusing charge in the vicinity of the nanoparticle. This allows us to derive a mean distance between the center of the particle and the diffusing charge of approximately 3.3 nm on average, as well as a mean charge carrier displacement within the integration time. The distances are larger than the combined radius of particle core and shell of about 3 nm, but smaller than the overall radius of 5 nm including ligands. These results are reproducible, even for particles which exhibit strong blueing, with shifts of up to 150 meV. Both the statistics and its independence of core-shell alterations lead us to conclude that the charge causing the spectral jitter is situated in the ligands.
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Submitted 22 March, 2013;
originally announced March 2013.
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Magnetotransport along a boundary: From coherent electron focusing to edge channel transport
Authors:
Thomas Stegmann,
Dietrich E. Wolf,
Axel Lorke
Abstract:
We study theoretically how electrons, coherently injected at one point on the boundary of a two-dimensional electron system, are focused by a perpendicular magnetic field $B$ onto another point on the boundary. Using the non-equilibrium Green's function approach, we calculate the generalized 4-point Hall resistance $R_{xy}$ as a function of B. In weak fields, $R_{xy}$ shows the characteristic equi…
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We study theoretically how electrons, coherently injected at one point on the boundary of a two-dimensional electron system, are focused by a perpendicular magnetic field $B$ onto another point on the boundary. Using the non-equilibrium Green's function approach, we calculate the generalized 4-point Hall resistance $R_{xy}$ as a function of B. In weak fields, $R_{xy}$ shows the characteristic equidistant peaks observed in the experiment and explained by classical cyclotron motion along the boundary. In strong fields, $R_{xy}$ shows a single extended plateau reflecting the quantum Hall effect. In intermediate fields, we find superimposed upon the lower Hall plateaus anomalous oscillations, which are neither periodic in 1/B (quantum Hall effect) nor in $B$ (classical cyclotron motion). The oscillations are explained by the interference between the occupied edge channels, which causes beatings in $R_{xy}$. In the case of two occupied edge channels, these beatings constitute a new commensurability between the magnetic flux enclosed within the edge channels and the flux quantum. Introducing decoherence and a partially specular boundary shows that this new effect is quite robust.
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Submitted 27 November, 2013; v1 submitted 25 February, 2013;
originally announced February 2013.
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A quantum Hall Mach-Zehnder interferometer far beyond the equilibrium
Authors:
E. V. Deviatov,
A. Ganczarczyk,
A. Lorke,
G. Biasiol,
L. Sorba
Abstract:
We experimentally realize quantum Hall Mach-Zehnder interferometer which operates far beyond the equilibrium. The operation of the interferometer is based on allowed intra-edge elastic transitions within the same Landau sublevel in the regime of high imbalances between the co-propagating edge states. Since the every edge state is definitely connected with the certain Landau sublevel, the formation…
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We experimentally realize quantum Hall Mach-Zehnder interferometer which operates far beyond the equilibrium. The operation of the interferometer is based on allowed intra-edge elastic transitions within the same Landau sublevel in the regime of high imbalances between the co-propagating edge states. Since the every edge state is definitely connected with the certain Landau sublevel, the formation of the interference loop can be understood as a splitting and a further reconnection of a single edge state. We observe an Aharonov-Bohm type interference pattern even for low-size interferometers. This novel interference scheme demonstrates high visibility even at millivolt imbalances and survives in a wide temperature range.
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Submitted 16 December, 2011; v1 submitted 7 June, 2011;
originally announced June 2011.
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Edge induced magneto plasmon excitation in a two-dimensional electron gas under quantum Hall conditions
Authors:
Christian Notthoff,
Dirk Reuter,
Andreas Wieck,
Axel Lorke
Abstract:
The spectrally resolved Terahertz photoconductivity between two separately contacted edge-channels of a two-dimensional electron gas in the quantum Hall regime is investigated. We use a not-simply-connected sample geometry which is topologically equivalent to a Corbino disc. Due to the high sensitivity of our novel sample structure, a weak resonance situated on the high energy side of the well kno…
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The spectrally resolved Terahertz photoconductivity between two separately contacted edge-channels of a two-dimensional electron gas in the quantum Hall regime is investigated. We use a not-simply-connected sample geometry which is topologically equivalent to a Corbino disc. Due to the high sensitivity of our novel sample structure, a weak resonance situated on the high energy side of the well known cyclotron resonance is revealed. The magnetic field as well as the carrier density dependence of this weak resonance, in comparison with different models suggests that the additional resonance is an edge induced magneto plasmon, which has so far not been observed in semiconductors.
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Submitted 10 August, 2011; v1 submitted 30 April, 2011;
originally announced May 2011.
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Energy transport by neutral collective excitations at the quantum Hall edge
Authors:
E. V. Deviatov,
A. Lorke,
G. Biasiol,
L. Sorba
Abstract:
We use the edge of the quantum Hall sample to study the possibility for counter-propagating neutral collective excitations. A novel sample design allows us to independently investigate charge and energy transport along the edge. We experimentally observe an upstream energy transfer with respect to the electron drift for the filling factors 1 and 1/3. Our analysis indicates that a neutral collectiv…
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We use the edge of the quantum Hall sample to study the possibility for counter-propagating neutral collective excitations. A novel sample design allows us to independently investigate charge and energy transport along the edge. We experimentally observe an upstream energy transfer with respect to the electron drift for the filling factors 1 and 1/3. Our analysis indicates that a neutral collective mode at the interaction-reconstructed edge is a proper candidate for the experimentally observed effect.
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Submitted 2 September, 2011; v1 submitted 20 January, 2011;
originally announced January 2011.
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Local investigation of the energy gap within the incompressible strip in the quantum Hall regime
Authors:
E. V. Deviatov,
A. Lorke,
G. Biasiol,
L. Sorba,
W. Wegscheider
Abstract:
We experimentally study the energy gap within the incompressible strip at local filling factor $ν_c=1$ at the quantum Hall edge for samples of very different mobilities. The obtained results indicate strong enhancement of the energy gap in comparison to the single-particle Zeeman splitting. We identify the measured gap as a mobility gap, so a pronounced experimental in-plane magnetic field depende…
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We experimentally study the energy gap within the incompressible strip at local filling factor $ν_c=1$ at the quantum Hall edge for samples of very different mobilities. The obtained results indicate strong enhancement of the energy gap in comparison to the single-particle Zeeman splitting. We identify the measured gap as a mobility gap, so a pronounced experimental in-plane magnetic field dependence can both be attributed to the spin effects as well as to the change in the energy levels broadening.
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Submitted 7 July, 2010;
originally announced July 2010.
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Non-equilibrium many-particle spin states in self-assembled quantum dot hydrogen, helium and lithium
Authors:
B. Marquardt,
M. Geller,
B. Baxevanis,
D. Pfannkuche,
A. D. Wieck,
D. Reuter,
A. Lorke
Abstract:
We introduce an all-electrical measurement technique, which makes it possible to prepare and detect the ground and excited many-particle states in self-assembled InAs QDs at 4K. This way, the pure-electron spectra of QD-hydrogen, -helium and -lithium are resolved. Comparison with detailed many-body calculations enables us to identify the different charge configurations and in particular detect the…
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We introduce an all-electrical measurement technique, which makes it possible to prepare and detect the ground and excited many-particle states in self-assembled InAs QDs at 4K. This way, the pure-electron spectra of QD-hydrogen, -helium and -lithium are resolved. Comparison with detailed many-body calculations enables us to identify the different charge configurations and in particular detect the singlet and triplet spin states of QD helium. Furthermore, the time-resolved evolution of the density of states from non-equilibrium to equilibrium charge occupation is shown.
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Submitted 2 July, 2010;
originally announced July 2010.
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Non-local effects of edge excitations in the quantum Hall regime
Authors:
E. V. Deviatov,
A. Lorke,
G. Biasiol,
L. Sorba
Abstract:
We use a novel sample geometry to study non-local effects of edge excitations in the integer quantum Hall effect regime. We find that the condition of local equilibrium at the quantum Hall edge is affected by the diffusion of dynamically polarized nuclei. Our analysis indicates, that the nuclear diffusion is effectively one-dimensional in the present experiment.
We use a novel sample geometry to study non-local effects of edge excitations in the integer quantum Hall effect regime. We find that the condition of local equilibrium at the quantum Hall edge is affected by the diffusion of dynamically polarized nuclei. Our analysis indicates, that the nuclear diffusion is effectively one-dimensional in the present experiment.
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Submitted 20 January, 2011; v1 submitted 23 February, 2010;
originally announced February 2010.
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Graphene on insulating crystalline substrates
Authors:
S. Akcoeltekin,
M. El Kharrazi,
B. Koehler,
A. Lorke,
M. Schleberger
Abstract:
We show that it is possible to prepare and identify ultra--thin sheets of graphene on crystalline substrates such as SrTiO$_3$, TiO$_2$, Al$_2$O$_3$ and CaF$_2$ by standard techniques (mechanical exfoliation, optical and atomic force microscopy). On the substrates under consideration we find a similar distribution of single, bi- and few layer graphene and graphite flakes as with conventional SiO…
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We show that it is possible to prepare and identify ultra--thin sheets of graphene on crystalline substrates such as SrTiO$_3$, TiO$_2$, Al$_2$O$_3$ and CaF$_2$ by standard techniques (mechanical exfoliation, optical and atomic force microscopy). On the substrates under consideration we find a similar distribution of single, bi- and few layer graphene and graphite flakes as with conventional SiO$_2$ substrates. The optical contrast $C$ of a single graphene layer on any of those substrates is determined by calculating the optical properties of a two-dimensional metallic sheet on the surface of a dielectric, which yields values between $C=$ ~- 1.5% (G/TiO$_2$) and $C=$ ~- 8.8% (G/CaF$_2$). This contrast is in reasonable agreement with experimental data and is sufficient to make identification by an optical microscope possible. The graphene layers cover the crystalline substrate in a carpet-like mode and the height of single layer graphene on any of the crystalline substrates as determined by atomic force microscopy is $d_{SLG}=0.34$ nm and thus much smaller than on SiO$_2$.
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Submitted 5 November, 2009;
originally announced November 2009.
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Terahertz photoresponse of a quantum Hall edge-channel diode
Authors:
Christian Notthoff,
Kevin Rachor,
Detlef Heitmann,
Axel Lorke
Abstract:
The Teraherz (THz) photoresponse of a two-dimensional electron gas in the quantum Hall regime is investigated. We use a sample structure which is topologically equivalent to a Corbino geometry combined with a cross-gate technique. This quasi-Corbino geometry allows us to directly investigate the THz-induced transport between adjacent edge-states, thus avoiding bulk effects. We find a pronounced…
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The Teraherz (THz) photoresponse of a two-dimensional electron gas in the quantum Hall regime is investigated. We use a sample structure which is topologically equivalent to a Corbino geometry combined with a cross-gate technique. This quasi-Corbino geometry allows us to directly investigate the THz-induced transport between adjacent edge-states, thus avoiding bulk effects. We find a pronounced photo voltage at zero applied bias, which rapidly decreases when an external current bias is applied. The photo voltage and its dependence on the bias current can be described using the model of an illuminated photodiode, resulting from the reconstruction of the Landau bands at the sample edge. Using the sample as a detector in a Fourier transform spectrometer setup, we find a resonant response from which we extract a reduced effective cyclotron mass. The findings support a non-bolometric mechanism of the induced photo voltage and the proposed edge-channel diode model.
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Submitted 10 November, 2009; v1 submitted 2 July, 2009;
originally announced July 2009.
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Interference effects in transport across a single incompressible strip at the edge of the fractional quantum Hall system
Authors:
E. V. Deviatov,
B. Marquardt,
A. Lorke,
G. Biasiol,
L. Sorba
Abstract:
We experimentally investigate interference effects in transport across a single incompressible strip at the edge of the quantum Hall system by using a Fabry-Perot type interferometer. We find the interference oscillations in transport across the incompressible strips with local filling factors $ν_c=1, 4/3, 2/3$ even at high imbalances, exceeding the spectral gaps. In contrast, there is no sign o…
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We experimentally investigate interference effects in transport across a single incompressible strip at the edge of the quantum Hall system by using a Fabry-Perot type interferometer. We find the interference oscillations in transport across the incompressible strips with local filling factors $ν_c=1, 4/3, 2/3$ even at high imbalances, exceeding the spectral gaps. In contrast, there is no sign of the interference in transport across the principal Laughlin $ν_c=1/3$ incompressible strip. This indicates, that even at fractional $ν_c$, the interference effects are caused by "normal" electrons. The oscillation's period is determined by the effective interferometer area, which is sensitive to the filling factors because of screening effects.
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Submitted 18 February, 2009; v1 submitted 4 September, 2008;
originally announced September 2008.
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Transverse rectification in density-modulated two-dimensional electron gases
Authors:
A. Ganczarczyk,
S. Rojek,
A. Quindeau,
M. Geller,
A. Hucht,
C. Notthoff,
D. Reuter,
A. D. Wieck,
J. König,
A. Lorke
Abstract:
We demonstrate tunable transverse rectification in a density-modulated two-dimensional electron gas (2DEG). The density modulation is induced by two surface gates, running in parallel along a narrow stripe of 2DEG. A transverse voltage in the direction of the density modulation is observed, i.e. perpendicular to the applied source-drain voltage. The polarity of the transverse voltage is independen…
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We demonstrate tunable transverse rectification in a density-modulated two-dimensional electron gas (2DEG). The density modulation is induced by two surface gates, running in parallel along a narrow stripe of 2DEG. A transverse voltage in the direction of the density modulation is observed, i.e. perpendicular to the applied source-drain voltage. The polarity of the transverse voltage is independent of the polarity of the source-drain voltage, demonstrating rectification in the device. We find that the transverse voltage $U_{y}$ depends quadratically on the applied source-drain voltage and non-monotonically on the density modulation. The experimental results are discussed in the framework of a diffusion thermopower model.
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Submitted 16 November, 2012; v1 submitted 4 April, 2008;
originally announced April 2008.
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Separately contacted edge states at high imbalance in the integer and fractional quantum Hall effect regime
Authors:
E. V. Deviatov,
A. Lorke
Abstract:
This review presents experimental results on the inter-edge-state transport in the quantum Hall effect, mostly obtained in the regime of high imbalance. The application of a special geometry makes it possible to perform I-V spectroscopy between individual edge channels in both the integer and the fractional regime. This makes it possible to study in detail a number of physical effects such as th…
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This review presents experimental results on the inter-edge-state transport in the quantum Hall effect, mostly obtained in the regime of high imbalance. The application of a special geometry makes it possible to perform I-V spectroscopy between individual edge channels in both the integer and the fractional regime. This makes it possible to study in detail a number of physical effects such as the creation of topological defects in the integer quantum Hall effect and neutral collective modes excitation in fractional regime. The while many of the experimental findings are well explained within established theories of the quantum Hall effects, a number of observations give new insight into the local structure at the sample edge, which can serve as a starting point for further theoretical studies.
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Submitted 18 March, 2008;
originally announced March 2008.
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Experimental realization of a Fabry-Perot-type interferometer by co-propagating edge states in the quantum Hall regime
Authors:
E. V. Deviatov,
A. Lorke
Abstract:
A Fabry-Perot-type interferometer is experimentally realized for electrons in a semiconductor device. A special experimental geometry creates interference conditions for co-propagating electrons in quantum Hall edge states, which results in oscillations of the current through the device. The visibility of these oscillations is found to increase at the high-field edge of the quantum Hall plateau.
A Fabry-Perot-type interferometer is experimentally realized for electrons in a semiconductor device. A special experimental geometry creates interference conditions for co-propagating electrons in quantum Hall edge states, which results in oscillations of the current through the device. The visibility of these oscillations is found to increase at the high-field edge of the quantum Hall plateau.
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Submitted 18 March, 2008; v1 submitted 10 December, 2007;
originally announced December 2007.
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Manifestation of a complex edge excitation structure in the fractional quantum Hall regime at high filling factors
Authors:
E. V. Deviatov,
A. Lorke,
W. Wegscheider
Abstract:
We experimentally study equilibration across the sample edge at high fractional filling factors 4/3, 5/3 under experimental conditions, which allow us to obtain high imbalance conditions. We find a lack of the full equilibration across the edge even in the flat-band situation, where no potential barrier survives at the sample edge. We interpret this result as the manifestation of complicated edg…
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We experimentally study equilibration across the sample edge at high fractional filling factors 4/3, 5/3 under experimental conditions, which allow us to obtain high imbalance conditions. We find a lack of the full equilibration across the edge even in the flat-band situation, where no potential barrier survives at the sample edge. We interpret this result as the manifestation of complicated edge excitation structure at high fractional filling factors 4/3, 5/3. Also, a mobility gap in the $ν_c=1$ incompressible strip is determined in normal and tilted magnetic fields.
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Submitted 8 November, 2007;
originally announced November 2007.
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Experimental imaging and atomistic modeling of electron and hole quasiparticle wave functions in InAs/GaAs quantum dots
Authors:
G. Bester,
D. Reuter,
L. He,
A. Zunger,
P. Kailuweit,
A. D. Wieck,
U. Zeitler,
J. C. Maan,
O. Wibbelhoff,
A. Lorke
Abstract:
We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the experimental results allows us to gain direct insight into the quantum states. We monitor the effects of (i) correlations, (ii) atomistic symmetry and (iii) pie…
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We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the experimental results allows us to gain direct insight into the quantum states. We monitor the effects of (i) correlations, (ii) atomistic symmetry and (iii) piezoelectricity on the confined carriers and (iv) observe a peculiar charging sequence of holes that violates the Aufbau principle.
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Submitted 12 July, 2007; v1 submitted 12 July, 2007;
originally announced July 2007.
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Evidence for the Luttigger liquid density of states in transport across the incompressible stripe at fractional filling factors
Authors:
E. V. Deviatov,
A. A. Kapustin,
V. T. Dolgopolov,
A. Lorke,
D. Reuter,
A. D. Wieck
Abstract:
We experimentally investigate transport across the incompressible stripe at the sample edge in the fractional quantum Hall effect regime at bulk filling factors $ν=2/3$ and $ν=2/5$. We obtain the dependence of the equilibration length, that is a phenomenological characteristics of the transport, on the voltage imbalance and the temperature, at high voltage imbalances. These dependencies are foun…
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We experimentally investigate transport across the incompressible stripe at the sample edge in the fractional quantum Hall effect regime at bulk filling factors $ν=2/3$ and $ν=2/5$. We obtain the dependence of the equilibration length, that is a phenomenological characteristics of the transport, on the voltage imbalance and the temperature, at high voltage imbalances. These dependencies are found to be of the power-law form, which is a strong evidence for the Luttigger liquid density of states.
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Submitted 29 December, 2006; v1 submitted 28 June, 2006;
originally announced June 2006.
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Equilibration between edge states in the fractional quantum Hall effect regime at high imbalances
Authors:
E. V. Deviatov,
A. A. Kapustin,
V. T. Dolgopolov,
A. Lorke,
D. Reuter,
A. D. Wieck
Abstract:
We experimentally study equilibration between edge states, co-propagating at the edge of the fractional quantum Hall liquid, at high initial imbalances. We find an anomalous increase of the conductance between the fractional edge states at the filling factor $ν=2/5$ in comparison with the expected one for the model of independent edge states. We conclude that the model of independent fractional…
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We experimentally study equilibration between edge states, co-propagating at the edge of the fractional quantum Hall liquid, at high initial imbalances. We find an anomalous increase of the conductance between the fractional edge states at the filling factor $ν=2/5$ in comparison with the expected one for the model of independent edge states. We conclude that the model of independent fractional edge states is not suitable to describe the experimental situation at $ν=2/5$.
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Submitted 29 December, 2006; v1 submitted 23 March, 2006;
originally announced March 2006.
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Experimental investigation of the edge states structure at fractional filling factors
Authors:
E. V. Deviatov,
V. T. Dolgopolov,
A. Lorke,
W. Wegscheider,
A. D. Wieck
Abstract:
We experimentally study electron transport between edge states in the fractional quantum Hall effect regime. We find an anomalous increase of the transport across the 2/3 incompressible fractional stripe in comparison with theoretical predictions for the smooth edge potential profile. We interpret our results as a first experimental demonstration of the intrinsic structure of the incompressible…
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We experimentally study electron transport between edge states in the fractional quantum Hall effect regime. We find an anomalous increase of the transport across the 2/3 incompressible fractional stripe in comparison with theoretical predictions for the smooth edge potential profile. We interpret our results as a first experimental demonstration of the intrinsic structure of the incompressible stripes arising at the sample edge in the fractional quantum Hall effect regime.
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Submitted 21 September, 2005;
originally announced September 2005.
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Topological defects in the edge state structure in a bilayer electron system
Authors:
E. V. Deviatov,
V. T. Dolgopolov,
A. Wurtz,
A. Lorke,
A. Wixforth,
W. Wegscheider,
K. L. Campman,
A. C. Gossard
Abstract:
We experimentally demonstrate, for the first time, formation of point-like topological defects in the edge state structure in the quantum Hall effect regime. By using of a selective population technique, we investigate equilibration processes between the edge states in bilayer electron structures with a high tunnelling rate between layers. Unexpected flattening of the I-V curves in perpendicular…
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We experimentally demonstrate, for the first time, formation of point-like topological defects in the edge state structure in the quantum Hall effect regime. By using of a selective population technique, we investigate equilibration processes between the edge states in bilayer electron structures with a high tunnelling rate between layers. Unexpected flattening of the I-V curves in perpendicular magnetic field at a specific filling factor combination and the recovery of the conventional nonlinear I-V characteristics in tilted fields give a strong evidence for the existence of topological defects.
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Submitted 18 March, 2005;
originally announced March 2005.
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Electrical read-out of the local nuclear polarization in the quantum Hall effect
Authors:
A. Würtz,
T. Müller,
A. Lorke,
D. Reuter,
A. D. Wieck
Abstract:
It is demonstrated that the now well-established `flip-flop' mechanism of spin exchange between electrons and nuclei in the quantum Hall effect can be reversed. We use a sample geometry which utilizes separately contacted edge states to establish a local nuclear spin polarization --close to the maximum value achievable-- by driving a current between electron states of different spin orientation.…
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It is demonstrated that the now well-established `flip-flop' mechanism of spin exchange between electrons and nuclei in the quantum Hall effect can be reversed. We use a sample geometry which utilizes separately contacted edge states to establish a local nuclear spin polarization --close to the maximum value achievable-- by driving a current between electron states of different spin orientation. When the externally applied current is switched off, the sample exhibits an output voltage of up to a few tenths of a meV, which decays with a time constant typical for the nuclear spin relaxation. The surprizing fact that a sample with a local nuclear spin polarization can act as a source of energy and that this energy is well above the nuclear Zeeman splitting is explained by a simple model which takes into account the effect of a local Overhauser shift on the edge state reconstruction.
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Submitted 16 March, 2005;
originally announced March 2005.
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Waveform sampling using an adiabatically driven electron ratchet in a two-dimensional electron system
Authors:
T. Mueller,
A. Wuertz,
A. Lorke,
D. Reuter,
A. D. Wieck
Abstract:
We utilize a time-periodic ratchet-like potential modulation imposed onto a two-dimensional electron system inside a GaAs/Al$_x$Ga$_{1-x}$As heterostructure to evoke a net dc pum** current. The modulation is induced by two sets of interdigitated gates, interlacing off center, which can be independently addressed. When the transducers are driven by two identical but phase-shifted ac signals, a…
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We utilize a time-periodic ratchet-like potential modulation imposed onto a two-dimensional electron system inside a GaAs/Al$_x$Ga$_{1-x}$As heterostructure to evoke a net dc pum** current. The modulation is induced by two sets of interdigitated gates, interlacing off center, which can be independently addressed. When the transducers are driven by two identical but phase-shifted ac signals, a lateral dc pum** current $I(φ)$ results, which strongly depends on both, the phase shift $φ$ and the waveform $V(t)$ of the imposed gate voltages. We find that for different periodic signals, the phase dependence $I(φ)$ closely resembles $V(t)$. A simple linear model of adiabatic pum** in two-dimensional electron systems is presented, which reproduces well our experimental findings.
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Submitted 16 March, 2005;
originally announced March 2005.
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Coulomb-interaction induced incomplete shell filling in the hole system of InAs quantum dots
Authors:
D. Reuter,
P. Kailuweit,
A. D. Wieck,
U. Zeitler,
O. S. Wibbelhoff,
C. Meier,
A. Lorke,
J. C. Maan
Abstract:
We have studied the hole charging spectra of self-assembled InAs quantum dots in perpendicular magnetic fields by capacitance-voltage spectroscopy. From the magnetic field dependence of the individual peaks we conclude that the s-like ground state is completely filled with two holes but that the fourfold degenerate p-shell is only half filled with two holes before the filling of the d-shell star…
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We have studied the hole charging spectra of self-assembled InAs quantum dots in perpendicular magnetic fields by capacitance-voltage spectroscopy. From the magnetic field dependence of the individual peaks we conclude that the s-like ground state is completely filled with two holes but that the fourfold degenerate p-shell is only half filled with two holes before the filling of the d-shell starts. The resulting six-hole ground state is highly polarized. This incomplete shell filling can be explained by the large influence of the Coulomb interaction in this system.
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Submitted 8 January, 2005;
originally announced January 2005.
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Magneto-capacitance probing of the many-particle states in InAs dots
Authors:
Oliver S. Wibbelhoff,
Axel Lorke,
Dirk Reuter,
Andreas D. Wieck
Abstract:
We use frequency-dependent capacitance-voltage spectroscopy to measure the tunneling probability into self-assembled InAs quantum dots. Using an in-plane magnetic field of variable strength and orientation, we are able to obtain information on the quasi-particle wave functions in momentum space for 1 to 6 electrons per dot. For the lowest two energy states, we find a good agreement with Gaussian…
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We use frequency-dependent capacitance-voltage spectroscopy to measure the tunneling probability into self-assembled InAs quantum dots. Using an in-plane magnetic field of variable strength and orientation, we are able to obtain information on the quasi-particle wave functions in momentum space for 1 to 6 electrons per dot. For the lowest two energy states, we find a good agreement with Gaussian functions for a harmonic potential. The high energy orbitals exhibit signatures of anisotropic confinement and correlation effects.
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Submitted 25 November, 2004; v1 submitted 6 September, 2004;
originally announced September 2004.
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Manifestation of the bulk phase transition in the edge energy spectrum in a two dimensional bilayer electron system
Authors:
E. V. Deviatov,
A. Wurtz,
A. Lorke,
M. Yu. Melnikov,
V. T. Dolgopolov,
A. Wixforth,
K. L. Campman,
A. C. Gossard
Abstract:
We use a quasi-Corbino sample geometry with independent contacts to different edge states in the quantum Hall effect regime to investigate the edge energy spectrum of a bilayer electron system at total filling factor $ν=2$. By analyzing non-linear $I-V$ curves in normal and tilted magnetic fields we conclude that the edge energy spectrum is in a close connection with the bulk one. At the bulk ph…
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We use a quasi-Corbino sample geometry with independent contacts to different edge states in the quantum Hall effect regime to investigate the edge energy spectrum of a bilayer electron system at total filling factor $ν=2$. By analyzing non-linear $I-V$ curves in normal and tilted magnetic fields we conclude that the edge energy spectrum is in a close connection with the bulk one. At the bulk phase transition spin-singlet - canted antiferromagnetic phase $I-V$ curve becomes to be linear, indicating the disappearance or strong narrowing of the $ν=1$ incompressible strip at the edge of the sample.
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Submitted 16 February, 2004;
originally announced February 2004.
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Observation of two relaxation mechanisms in transport between spin split edge states at high imbalance
Authors:
E. V. Deviatov,
A. Wurtz,
A. Lorke,
M. Yu. Melnikov,
V. T. Dolgopolov,
D. Reuter,
A. D. Wieck
Abstract:
Using a quasi-Corbino geometry to directly study electron transport between spin-split edge states, we find a pronounced hysteresis in the I-V curves, originating from slow relaxation processes. We attribute this long-time relaxation to the formation of a dynamic nuclear polarization near the sample edge. The determined characteristic relaxation times are 25 s and 200 s which points to the prese…
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Using a quasi-Corbino geometry to directly study electron transport between spin-split edge states, we find a pronounced hysteresis in the I-V curves, originating from slow relaxation processes. We attribute this long-time relaxation to the formation of a dynamic nuclear polarization near the sample edge. The determined characteristic relaxation times are 25 s and 200 s which points to the presence of two different relaxation mechanisms. The two time constants are ascribed to the formation of a local nuclear polarization due to flip-flop processes and the diffusion of nuclear spins.
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Submitted 24 March, 2003;
originally announced March 2003.
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Separately contacted edge states: A new spectroscopic tool for the investigation of the quantum Hall effect
Authors:
A. Wuertz,
R. Wildfeuer,
A. Lorke,
E. V. Deviatov,
V. T. Dolgopolov
Abstract:
Using an innovative combination of a quasi-Corbino sample geometry and the cross-gate technique, we have developed a method that enables us to separately contact single edge channels in the quantum Hall regime and investigate equilibration among them. Performing 4-point resistance measurements, we directly obtain information on the energetic and geometric structure of the edge region and the equ…
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Using an innovative combination of a quasi-Corbino sample geometry and the cross-gate technique, we have developed a method that enables us to separately contact single edge channels in the quantum Hall regime and investigate equilibration among them. Performing 4-point resistance measurements, we directly obtain information on the energetic and geometric structure of the edge region and the equilibration-length for current transport across the Landau- as well as the spin-gap. Based on an almost free choice in the number of participating edge channels and their interaction-length a systematic investigation of the parameter-space becomes possible.
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Submitted 26 November, 2001; v1 submitted 10 August, 2001;
originally announced August 2001.