Showing 1–28 of 28 results for author: Lordi, V

Cross-scale covariance for material property prediction

Authors: Benjamin A. Jasperson, Ilia Nikiforov, Amit Samanta, Fei Zhou, Ellad B. Tadmor, Vincenzo Lordi, Vasily V. Bulatov

Abstract: A simulation can stand its ground against experiment only if its prediction uncertainty is known. The unknown accuracy of interatomic potentials (IPs) is a major source of prediction uncertainty, severely limiting the use of large-scale classical atomistic simulations in a wide range of scientific and engineering applications. Here we explore covariance between predictions of metal plasticity, fro… ▽ More A simulation can stand its ground against experiment only if its prediction uncertainty is known. The unknown accuracy of interatomic potentials (IPs) is a major source of prediction uncertainty, severely limiting the use of large-scale classical atomistic simulations in a wide range of scientific and engineering applications. Here we explore covariance between predictions of metal plasticity, from 178 large-scale ($\sim 10^8$ atoms) molecular dynamics (MD) simulations, and a variety of indicator properties computed at small-scales ($\leq 10^2$ atoms). All simulations use the same 178 IPs. In a manner similar to statistical studies in public health, we analyze correlations of strength with indicators, identify the best predictor properties, and build a cross-scale ``strength-on-predictors'' regression model. This model is then used to quantify uncertainty over the statistical pool of IPs. Small-scale predictors found to be highly covariant with strength are computed using expensive quantum-accurate calculations and used to predict flow strength, within the uncertainty bounds established in our statistical study. △ Less

Submitted 29 May, 2024; originally announced June 2024.

Growth and Structure of alpha-Ta films for Quantum Circuit Integration

Authors: Loren D. Alegria, Alex Abelson, Eunjeong Kim, Soohyun Im, Paul M. Voyles, Vincenzo Lordi, Jonathan L Dubois, Yaniv J. Rosen

Abstract: Tantalum films incorporated into superconducting circuits have exhibited low surface losses, resulting in long-lived qubit states. Remaining loss pathways originate in microscopic defects which manifest as two level systems (TLS) at low temperature. These defects limit performance, so careful attention to tantalum film structures is critical for optimal use in quantum devices. In this work, we inv… ▽ More Tantalum films incorporated into superconducting circuits have exhibited low surface losses, resulting in long-lived qubit states. Remaining loss pathways originate in microscopic defects which manifest as two level systems (TLS) at low temperature. These defects limit performance, so careful attention to tantalum film structures is critical for optimal use in quantum devices. In this work, we investigate the growth of tantalum using magnetron sputtering on sapphire, Si, and photoresist substrates. In the case of sapphire, we present procedures for growth of fully-oriented films with alpha-Ta [1 1 1] // Al2O3 [0 0 1] and alpha-Ta [1 -1 0] // Al2O3 [1 0 0] orientational relationships, and having residual resistivity ratios (RRR) ~ 60 for 220 nm thick films. On Si, we find a complex grain texturing with Ta [1 1 0] normal to the substrate and RRR ~ 30. We further demonstrate airbridge fabrication using Nb to nucleate alpha-Ta on photoresist surfaces. Superconducting resonators patterned from films on sapphire show TLS-limited quality factors of 1.4 +/- 0.3 x 10^6 at 10 mK. Structural characterization using scanning electron microscopy, X-ray diffraction, low temperature transport, secondary ion mass spectrometry, and transmission electron microscopy reveal the dependence of residual impurities and screw dislocation density on processing conditions. The results provide practical insights for fabrication of high-performing technological devices including qubit arrays, and guide future work on crystallographically deterministic qubit fabrication. △ Less

Submitted 30 May, 2024; v1 submitted 12 May, 2024; originally announced May 2024.

Ice phase classification made easy with score-based denoising

Authors: Hong Sun, Sebastien Hamel, Tim Hsu, Babak Sadigh, Vince Lordi, Fei Zhou

Abstract: Accurate identification of ice phases is essential for understanding various physicochemical phenomena. However, such classification for structures simulated with molecular dynamics is complicated by the complex symmetries of ice polymorphs and thermal fluctuations. For this purpose, both traditional order parameters and data-driven machine learning approaches have been employed, but they often re… ▽ More Accurate identification of ice phases is essential for understanding various physicochemical phenomena. However, such classification for structures simulated with molecular dynamics is complicated by the complex symmetries of ice polymorphs and thermal fluctuations. For this purpose, both traditional order parameters and data-driven machine learning approaches have been employed, but they often rely on expert intuition, specific geometric information, or large training datasets. In this work, we present an unsupervised phase classification framework that combines a score-based denoiser model with a subsequent model-free classification method to accurately identify ice phases. The denoiser model is trained on perturbed synthetic data of ideal reference structures, eliminating the need for large datasets and labeling efforts. The classification step utilizes the Smooth Overlap of Atomic Positions (SOAP) descriptors as the atomic fingerprint, ensuring Euclidean symmetries and transferability to various structural systems. Our approach achieves a remarkable 100\% accuracy in distinguishing ice phases of test trajectories using only seven ideal reference structures of ice phases as model inputs. This demonstrates the generalizability of the score-based denoiser model in facilitating phase identification for complex molecular systems. The proposed classification strategy can be broadly applied to investigate structural evolution and phase identification for a wide range of materials, offering new insights into the fundamental understanding of water and other complex systems. △ Less

Submitted 10 May, 2024; originally announced May 2024.

Comments: 20 pages, 3 figures

Information theory unifies atomistic machine learning, uncertainty quantification, and materials thermodynamics

Authors: Daniel Schwalbe-Koda, Sebastien Hamel, Babak Sadigh, Fei Zhou, Vincenzo Lordi

Abstract: An accurate description of information is relevant for a range of problems in atomistic modeling, such as sampling methods, detecting rare events, analyzing datasets, or performing uncertainty quantification (UQ) in machine learning (ML)-driven simulations. Although individual methods have been proposed for each of these tasks, they lack a common theoretical background integrating their solutions.… ▽ More An accurate description of information is relevant for a range of problems in atomistic modeling, such as sampling methods, detecting rare events, analyzing datasets, or performing uncertainty quantification (UQ) in machine learning (ML)-driven simulations. Although individual methods have been proposed for each of these tasks, they lack a common theoretical background integrating their solutions. Here, we introduce an information theoretical framework that unifies predictions of phase transformations, kinetic events, dataset optimality, and model-free UQ from atomistic simulations, thus bridging materials modeling, ML, and statistical mechanics. We first demonstrate that, for a proposed representation, the information entropy of a distribution of atom-centered environments is a surrogate value for thermodynamic entropy. Using molecular dynamics (MD) simulations, we show that information entropy differences from trajectories can be used to build phase diagrams, identify rare events, and recover classical theories of nucleation. Building on these results, we use this general concept of entropy to quantify information in datasets for ML interatomic potentials (IPs), informing compression, explaining trends in testing errors, and evaluating the efficiency of active learning strategies. Finally, we propose a model-free UQ method for MLIPs using information entropy, showing it reliably detects extrapolation regimes, scales to millions of atoms, and goes beyond model errors. This method is made available as the package QUESTS: Quick Uncertainty and Entropy via STructural Similarity, providing a new unifying theory for data-driven atomistic modeling and combining efforts in ML, first-principles thermodynamics, and simulations. △ Less

Submitted 18 April, 2024; originally announced April 2024.

Report number: LLNL-JRNL-862887-DRAFT

Direct Experimental Constraints on the Spatial Extent of a Neutrino Wavepacket

Authors: Joseph Smolsky, Kyle G Leach, Ryan Abells, Pedro Amaro, Adrien Andoche, Keith Borbridge, Connor Bray, Robin Cantor, David Diercks, Spencer Fretwell, Stephan Friedrich, Abigail Gillespie, Mauro Guerra, Ad Hall, Cameron N Harris, Jackson T Harris, Calvin Hinkle, Amii Lamm, Leendert M Hayen, Paul-Antoine Hervieux, Geon-Bo Kim, Inwook Kim, Annika Lennarz, Vincenzo Lordi, Jorge Machado , et al. (13 additional authors not shown)

Abstract: Despite their high relative abundance in our Universe, neutrinos are the least understood fundamental particles of nature. They also provide a unique system to study quantum coherence and the wavelike nature of particles in fundamental systems due to their extremely weak interaction probabilities. In fact, the quantum properties of neutrinos emitted in experimentally relevant sources are virtually… ▽ More Despite their high relative abundance in our Universe, neutrinos are the least understood fundamental particles of nature. They also provide a unique system to study quantum coherence and the wavelike nature of particles in fundamental systems due to their extremely weak interaction probabilities. In fact, the quantum properties of neutrinos emitted in experimentally relevant sources are virtually unknown and the spatial extent of the neutrino wavepacket is only loosely constrained by reactor neutrino oscillation data with a spread of 13 orders of magnitude. Here, we present the first direct limits of this quantity through a new experimental concept to extract the energy width, $σ_{\textrm{N},E}$, of the recoil daughter nucleus emitted in the nuclear electron capture (EC) decay of $^7$Be. The final state in the EC decay process contains a recoiling $^7$Li nucleus and an electron neutrino ($ν_e$) which are entangled at their creation. The $^7$Li energy spectrum is measured to high precision by directly embedding $^7$Be radioisotopes into a high resolution superconducting tunnel junction that is operated as a cryogenic sensor. The lower limit on the spatial uncertainty of the recoil daughter was found to be $σ_{\textrm{N}, x} \geq 6.2$\,pm, which implies the final-state system is localized at a scale more than a thousand times larger than the nucleus itself. From this measurement, the first direct lower limits on the spatial extent of the neutrino wavepacket were extracted using two different theoretical methods. These results have wide-reaching implications in several areas including the nature of spatial localization at sub-atomic scales, interpretation of neutrino physics data, and the potential reach of future large-scale experiments. △ Less

Submitted 30 April, 2024; v1 submitted 3 April, 2024; originally announced April 2024.

Comments: 20 pages, 3 figures, v3 corrects and updates one of the wavepacket width calculations

LTAU-FF: Loss Trajectory Analysis for Uncertainty in Atomistic Force Fields

Authors: Joshua A. Vita, Amit Samanta, Fei Zhou, Vincenzo Lordi

Abstract: Model ensembles are effective tools for estimating prediction uncertainty in deep learning atomistic force fields. However, their widespread adoption is hindered by high computational costs and overconfident error estimates. In this work, we address these challenges by leveraging distributions of per-sample errors obtained during training and employing a distance-based similarity search in the mod… ▽ More Model ensembles are effective tools for estimating prediction uncertainty in deep learning atomistic force fields. However, their widespread adoption is hindered by high computational costs and overconfident error estimates. In this work, we address these challenges by leveraging distributions of per-sample errors obtained during training and employing a distance-based similarity search in the model latent space. Our method, which we call LTAU, efficiently estimates the full probability distribution function (PDF) of errors for any test point using the logged training errors, achieving speeds that are 2--3 orders of magnitudes faster than typical ensemble methods and allowing it to be used for tasks where training or evaluating multiple models would be infeasible. We apply LTAU towards estimating parametric uncertainty in atomistic force fields (LTAU-FF), demonstrating that its improved ensemble diversity produces well-calibrated confidence intervals and predicts errors that correlate strongly with the true errors for data near the training domain. Furthermore, we show that the errors predicted by LTAU-FF can be used in practical applications for detecting out-of-domain data, tuning model performance, and predicting failure during simulations. We believe that LTAU will be a valuable tool for uncertainty quantification (UQ) in atomistic force fields and is a promising method that should be further explored in other domains of machine learning. △ Less

Submitted 22 May, 2024; v1 submitted 1 February, 2024; originally announced February 2024.

The Data Acquisition System for Phase-III of the BeEST Experiment

Authors: C. Bray, S. Fretwell, I. Kim, W. K. Warburton, F. Ponce, K. G. Leach, S. Friedrich, R. Abells, P. Amaro, A. Andoche, R. Cantor, D. Diercks, M. Guerra, A. Hall, C. Harris, J. Harris, L. Hayen, P. A. Hervieux, G. B. Kim, A. Lennarz, V. Lordi, J. Machado, P. Machule, A. Marino, D. McKeen , et al. (5 additional authors not shown)

Abstract: The BeEST experiment is a precision laboratory search for physics beyond the standard model that measures the electron capture decay of $^7$Be implanted into superconducting tunnel junction (STJ) detectors. For Phase-III of the experiment, we constructed a continuously sampling data acquisition system to extract pulse shape and timing information from 16 STJ pixels offline. Four additional pixels… ▽ More The BeEST experiment is a precision laboratory search for physics beyond the standard model that measures the electron capture decay of $^7$Be implanted into superconducting tunnel junction (STJ) detectors. For Phase-III of the experiment, we constructed a continuously sampling data acquisition system to extract pulse shape and timing information from 16 STJ pixels offline. Four additional pixels are read out with a fast list-mode digitizer, and one with a nuclear MCA already used in the earlier limit-setting phases of the experiment. We present the performance of the data acquisition system and discuss the relative advantages of the different digitizers. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Comments: 8 pages, 4 figures, proceedings for The 20th International Conference on Low Temperature Detectors

Dangling bonds as possible contributors to charge noise in silicon and silicon-germanium quantum dot qubits

Authors: Joel B. Varley, Keith G. Ray, Vincenzo Lordi

Abstract: Spin qubits based on Si and Si$_{1-x}$Ge$_{x}$ quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities. Identifying the origins of these charge fluctuations is therefore a critical step toward improving Si quantum-dot-based qubits. Here we use hybrid functional calcu… ▽ More Spin qubits based on Si and Si$_{1-x}$Ge$_{x}$ quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities. Identifying the origins of these charge fluctuations is therefore a critical step toward improving Si quantum-dot-based qubits. Here we use hybrid functional calculations to investigate possible atomistic sources of charge noise, focusing on charge trap** at Si and Ge dangling bonds (DBs). We evaluate the role of global and local environment in the defect levels associated with DBs in Si, Ge, and \sige alloys, and consider their trap** and excitation energies within the framework of configuration coordinate diagrams. We additionally consider the influence of strain and oxidation in charge-trap** energetics by analyzing Si and Ge$_{\rm Si}$ DBs in SiO$_2$ and strained Si layers in typical \sige quantum dot heterostructures. Our results identify that Ge dangling bonds are more problematic charge-trap** centers both in typical \sige alloys and associated oxidation layers, and they may be exacerbated by compositional inhomogeneities. These results suggest the importance of alloy homogeneity and possible passivation schemes for DBs in Si-based quantum dot qubits and are of general relevance to mitigating possible trap levels in other Si, Ge, and Si$_{1-x}$Ge$_{x}$-based metal-oxide-semiconductor stacks and related devices. △ Less

Submitted 9 June, 2023; originally announced June 2023.

Comments: 37 pages, 8 figures

Report number: LLNL-JRNL-849060

A physically motivated analytical expression for the temperature dependence of the zero-field splitting of the nitrogen-vacancy center in diamond

Authors: M. C. Cambria, G. Thiering, A. Norambuena, H. T. Dinani, A. Gardill, I. Kemeny, V. Lordi, A. Gali, J. R. Maze, S. Kolkowitz

Abstract: The temperature dependence of the zero-field splitting (ZFS) between the $|m_{s}=0\rangle$ and $|m_{s}=\pm 1\rangle$ levels of the nitrogen-vacancy (NV) center's electronic ground-state spin triplet can be used as a robust nanoscale thermometer in a broad range of environments. However, despite numerous measurements of this dependence in different temperature ranges, to our knowledge no analytical… ▽ More The temperature dependence of the zero-field splitting (ZFS) between the $|m_{s}=0\rangle$ and $|m_{s}=\pm 1\rangle$ levels of the nitrogen-vacancy (NV) center's electronic ground-state spin triplet can be used as a robust nanoscale thermometer in a broad range of environments. However, despite numerous measurements of this dependence in different temperature ranges, to our knowledge no analytical expression has been put forward that captures the scaling of the ZFS of the NV center across all relevant temperatures. Here we present a simple, analytical, and physically motivated expression for the temperature dependence of the NV center's ZFS that matches all experimental observations, in which the ZFS shifts in proportion to the occupation numbers of two representative phonon modes. In contrast to prior models our expression does not diverge outside the regions of fitting. We show that our model quantitatively matches experimental measurements of the ZFS from 15 to 500 K in single NV centers in ultra-pure bulk diamond, and we compare our model and measurements to prior models and experimental data. △ Less

Submitted 8 June, 2023; originally announced June 2023.

Comments: Main text: 7 pages, 4 figures, 1 table, 44 references. Supplemental Material: 12 pages, 5 figures, 2 tables, 23 references

Simulating noise on a quantum processor: interactions between a qubit and resonant two-level system bath

Authors: Yu** Cho, Dipti Jasrasaria, Keith G. Ray, Daniel M. Tennant, Vincenzo Lordi, Jonathan L DuBois, Yaniv J. Rosen

Abstract: Material defects fundamentally limit the coherence times of superconducting qubits, and manufacturing completely defect-free devices is not yet possible. Therefore, understanding the interactions between defects and a qubit in a real quantum processor design is essential. We build a model that incorporates the standard tunneling model, the electric field distributions in the qubit, and open quantu… ▽ More Material defects fundamentally limit the coherence times of superconducting qubits, and manufacturing completely defect-free devices is not yet possible. Therefore, understanding the interactions between defects and a qubit in a real quantum processor design is essential. We build a model that incorporates the standard tunneling model, the electric field distributions in the qubit, and open quantum system dynamics, and draws from the current understanding of two-level system (TLS) theory. Specifically, we start with one million TLSs distributed on the surface of a qubit and pick the 200 systems that are most strongly coupled to the qubit. We then perform a full Lindbladian simulation that explicitly includes the coherent coupling between the qubit and the TLS bath to model the time dependent density matrix of resonant TLS defects and the qubit. We find that the 200 most strongly coupled TLSs can accurately describe the qubit energy relaxation time. This work confirms that resonant TLSs located in areas where the electric field is strong can significantly affect the qubit relaxation time, even if they are located far from the Josephson junction. Similarly, a strongly-coupled resonant TLS located in the Josephson junction does not guarantee a reduced qubit relaxation time if a more strongly coupled TLS is far from the Josephson junction. In addition to the coupling strengths between TLSs and the qubit, the model predicts that the geometry of the device and the TLS relaxation time play a significant role in qubit dynamics. Our work can provide guidance for future quantum processor designs with improved qubit coherence times. △ Less

Submitted 7 June, 2023; v1 submitted 15 November, 2022; originally announced November 2022.

Comments: 8 pages, 5 figures

Journal ref: Quantum Sci. Technol. 8 045023 (2023)

Temperature-dependent spin-lattice relaxation of the nitrogen-vacancy spin triplet in diamond

Authors: M. C. Cambria, A. Norambuena, H. T. Dinani, G. Thiering, A. Gardill, I. Kemeny, Y. Li, V. Lordi, A. Gali, J. R. Maze, S. Kolkowitz

Abstract: Spin-lattice relaxation within the nitrogen-vacancy (NV) center's electronic ground-state spin triplet limits its coherence times, and thereby impacts its performance in quantum applications. We report measurements of the relaxation rates on the NV center's $|m_{s}=0\rangle \leftrightarrow |m_{s}=\pm 1\rangle$ and $|m_{s}=-1\rangle \leftrightarrow |m_{s}=+1\rangle$ transitions as a function of tem… ▽ More Spin-lattice relaxation within the nitrogen-vacancy (NV) center's electronic ground-state spin triplet limits its coherence times, and thereby impacts its performance in quantum applications. We report measurements of the relaxation rates on the NV center's $|m_{s}=0\rangle \leftrightarrow |m_{s}=\pm 1\rangle$ and $|m_{s}=-1\rangle \leftrightarrow |m_{s}=+1\rangle$ transitions as a function of temperature from 9 to 474 K in high-purity samples. We show that the temperature dependencies of the rates are reproduced by an ab initio theory of Raman scattering due to second-order spin-phonon interactions, and we discuss the applicability of the theory to other spin systems. Using a novel analytical model based on these results, we suggest that the high-temperature behavior of NV spin-lattice relaxation is dominated by interactions with two groups of quasilocalized phonons centered at 68.2(17) and 167(12) meV. △ Less

Submitted 9 May, 2023; v1 submitted 28 September, 2022; originally announced September 2022.

Comments: Main text: 7 pages, 4 figures, 44 references. Supplement: 14 pages, 11 figures, 4 tables, 25 references. Revised version v2 includes changes to improve clarity

Material Effects on Electron Capture Decays in Cryogenic Sensors

Authors: Amit Samanta, Stephan Friedrich, Kyle G. Leach, Vincenzo Lordi

Abstract: Several current searches for physics beyond the standard model are based on measuring the electron capture (EC) decay of radionuclides implanted into cryogenic high-resolution sensors. The sensitivity of these experiments has already reached the level where systematic effects related to atomic-state energy changes from the host material are a limiting factor. One example is a neutrino mass study b… ▽ More Several current searches for physics beyond the standard model are based on measuring the electron capture (EC) decay of radionuclides implanted into cryogenic high-resolution sensors. The sensitivity of these experiments has already reached the level where systematic effects related to atomic-state energy changes from the host material are a limiting factor. One example is a neutrino mass study based on the nuclear EC decay of $^7$Be to $^7$Li inside cryogenic Ta-based sensors. To understand the material effects at the required level we have used density functional theory and modeled the electronic structure of lithium atoms in different atomic environments of the polycrystalline Ta absorber film. The calculations reveal that the Li 1s binding energies can vary by more than 2 eV due to insertion at different lattice sites, at grain boundaries, in disordered Ta, and in the vicinity of various impurities. However, the total range of Li 1s shifts does not exceed 4 eV, even for extreme amorphous disorder. Further, when investigating the effects on the Li 2s levels, we find broadening of more than 5 eV due to hybridization with the Ta band structure. Materials effects are shown to contribute significantly to peak broadening in Ta-based sensors that are used to search for physics beyond the standard model in the EC decay of $^7$Be, but they do not explain the full extent of observed broadening. Understanding these in-medium effects will be required for current- and future-generation experiments that observe low-energy radiation from the EC decay of implanted isotopes to evaluate potential limitations on the measurement sensitivity. △ Less

Submitted 31 May, 2022; originally announced June 2022.

Comments: 15 pages, 8 figures

Report number: LLNL-JRNL-834730

Super-resolution Airy disk microscopy of individual color centers in diamond

Authors: A. Gardill, I. Kemeny, Y. Li, M. Zahedian, M. C. Cambria, X. Xu, V. Lordi, Á. Gali, J. R. Maze, J. T. Choy, S. Kolkowitz

Abstract: Super-resolution imaging techniques enable nanoscale microscopy in fields such as physics, biology, and chemistry. However, many super-resolution techniques require specialized optical components, such as a helical-phase mask. We present a novel technique, Super-resolution Airy disk Microscopy (SAM) that can be used in a standard confocal microscope without any specialized optics. We demonstrate t… ▽ More Super-resolution imaging techniques enable nanoscale microscopy in fields such as physics, biology, and chemistry. However, many super-resolution techniques require specialized optical components, such as a helical-phase mask. We present a novel technique, Super-resolution Airy disk Microscopy (SAM) that can be used in a standard confocal microscope without any specialized optics. We demonstrate this technique, in combination with ground state depletion, to image and control nitrogen-vacancy (NV) centers in bulk diamond below the diffraction limit. A greater than 14-fold improvement in resolution compared to the diffraction limit is achieved, corresponding to a spatial resolution of 16.9(8) nm for a 1.3 NA microscope with 589 nm light. We make use of our enhanced spatial resolution to control the spins states of individual NV centers separated from each other by less than the diffraction limit, including pairs sharing the same orientation that are indistinguishable with a conventional electron spin resonance measurement. △ Less

Submitted 10 May, 2022; v1 submitted 22 March, 2022; originally announced March 2022.

Comments: Main text: 6 pages, 4 figures, 31 references. Supplement: 14 pages, 10 figures, 15 references. Version 2 contains updated figures and modified text to improve clarity and readability

How Correlated Adsorbate Dynamics on Realistic Substrates Can Give Rise to 1/ω Electric-Field Noise in Surface Ion Traps

Authors: Benjamin Foulon, Keith G. Ray, Chang-Eun Kim, Yuan Liu, Brenda M. Rubenstein, Vincenzo Lordi

Abstract: Ion traps are promising architectures for implementing scalable quantum computing, but they suffer from excessive "anomalous" heating that prevents their full potential from being realized. This heating, which is orders of magnitude larger than that expected from Johnson-Nyquist noise, results in ion motion that leads to decoherence and reduced fidelity in quantum logic gates. The exact origin of… ▽ More Ion traps are promising architectures for implementing scalable quantum computing, but they suffer from excessive "anomalous" heating that prevents their full potential from being realized. This heating, which is orders of magnitude larger than that expected from Johnson-Nyquist noise, results in ion motion that leads to decoherence and reduced fidelity in quantum logic gates. The exact origin of anomalous heating is an open question, but experiments point to adsorbates on trap electrodes as a likely source. Many different models of anomalous heating have been proposed, but these models have yet to pinpoint the atomistic origin of the experimentally-observed $1/ω$ electric field noise scaling observed in ion traps at frequencies between 0.1-10 MHz. In this work, we perform the first computational study of the ion trap electric field noise produced by the motions of multiple monolayers of adsorbates described by first principles potentials. In so doing, we show that correlated adsorbate motions play a definitive role in producing $1/ω$ noise and identify candidate collective adsorbate motions, including translational and rotational motions of adsorbate patches and multilayer exchanges, that give rise to $1/ω$ scaling at the MHz frequencies typically employed in ion traps. These results demonstrate that multi-adsorbate systems, even simple ones, can give rise to a set of activated motions that can produce the $1/ω$ noise observed in ion traps and that collective, rather than individual, adsorbate motions are much more likely to give rise to low-frequency heating. △ Less

Submitted 2 July, 2021; originally announced July 2021.

Probing charge dynamics in diamond with an individual color center

Authors: A. Gardill, I. Kemeny, M. C. Cambria, Y. Li, H. T. Dinani, A. Norambuena, J. R. Maze, V. Lordi, S. Kolkowitz

Abstract: Control over the charge states of color centers in solids is necessary in order to fully utilize them in quantum technologies. However, the microscopic charge dynamics of deep defects in wide-bandgap semiconductors are complex, and much remains unknown. Here, we utilize single shot charge state readout of an individual nitrogen-vacancy (NV) center to probe charge dynamics of the surrounding defect… ▽ More Control over the charge states of color centers in solids is necessary in order to fully utilize them in quantum technologies. However, the microscopic charge dynamics of deep defects in wide-bandgap semiconductors are complex, and much remains unknown. Here, we utilize single shot charge state readout of an individual nitrogen-vacancy (NV) center to probe charge dynamics of the surrounding defects in diamond. We show that the NV center charge state can be converted through the capture of holes produced by optical illumination of defects many microns away. With this method, we study the optical charge conversion of silicon-vacancy (SiV) centers and provide evidence that the dark state of the SiV center under optical illumination is SiV2-. These measurements illustrate that charge carrier generation, transport, and capture are important considerations in the design and implementation of quantum devices with color centers, and provide a novel way to probe and control charge dynamics in diamond. △ Less

Submitted 9 June, 2021; originally announced June 2021.

Comments: Main text: 18 pages, 4 figures, 32 references. Supporting Information: 20 pages, 9 figures, 2 tables, 12 references

Changes in electric-field noise due to thermal transformation of a surface ion trap

Authors: Maya Berlin-Udi, Clemens Matthiesen, P. N. Thomas Lloyd, Alberto M. Alonso, Crystal Noel, Benjamin Saarel, Christine A. Orme, Chang-Eun Kim, Art J. Nelson, Keith G. Ray, Vincenzo Lordi, Hartmut Häffner

Abstract: We aim to illuminate how the microscopic properties of a metal surface map to its electric-field noise characteristics. In our system, prolonged heat treatments of a metal film can induce a rise in the magnitude of the electric-field noise generated by the surface of that film. We refer to this heat-induced rise in noise magnitude as a thermal transformation. The underlying physics of this thermal… ▽ More We aim to illuminate how the microscopic properties of a metal surface map to its electric-field noise characteristics. In our system, prolonged heat treatments of a metal film can induce a rise in the magnitude of the electric-field noise generated by the surface of that film. We refer to this heat-induced rise in noise magnitude as a thermal transformation. The underlying physics of this thermal transformation process is explored through a series of heating, milling, and electron treatments performed on a single surface ion trap. Between these treatments, $^{40}$Ca$^+$ ions trapped 70~$μ$m above the surface of the metal are used as detectors to monitor the electric-field noise at frequencies close to 1~MHz. An Auger spectrometer is used to track changes in the composition of the contaminated metal surface. With these tools we investigate contaminant deposition, chemical reactions, and atomic restructuring as possible drivers of thermal transformations. △ Less

Submitted 15 July, 2022; v1 submitted 7 March, 2021; originally announced March 2021.

Limits on the Existence of sub-MeV Sterile Neutrinos from the Decay of $^7$Be in Superconducting Quantum Sensors

Authors: S. Friedrich, G. B. Kim, C. Bray, R. Cantor, J. Dilling, S. Fretwell, J. A. Hall, A. Lennarz, V. Lordi, P. Machule, D. McKeen, X. Mougeot, F. Ponce, C. Ruiz, A. Samanta, W. K. Warburton, K. G. Leach

Abstract: Sterile neutrinos are natural extensions to the standard model of particle physics and provide a possible portal to the dark sector. We report a new search for the existence of sub-MeV sterile neutrinos using the decay-momentum reconstruction technique in the decay of $^7$Be. The experiment measures the total energy of the $^7$Li daughter atom from the electron capture decay of $^7$Be implanted in… ▽ More Sterile neutrinos are natural extensions to the standard model of particle physics and provide a possible portal to the dark sector. We report a new search for the existence of sub-MeV sterile neutrinos using the decay-momentum reconstruction technique in the decay of $^7$Be. The experiment measures the total energy of the $^7$Li daughter atom from the electron capture decay of $^7$Be implanted into sensitive superconducting tunnel junction (STJ) quantum sensors. This first experiment presents data from a single STJ operated at a low count rate for a net total of 28 days, and provides exclusion limits on sterile neutrinos in the mass range from 100 to 850 keV that improve upon previous work by up to an order of magnitude. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Comments: 7 pages. 3 figures. Submitted to Physical Review Letters

Journal ref: Phys. Rev. Lett. 126, 021803 (2021)

On Quantifying Large Lattice Relaxations in Photovoltaic Devices

Authors: Marco Nardone, Yasas Patikirige, Kyoung E. Kweon, Curtis Walkons, Theresa Magorian Friedlmeier, Joel B. Varley, Vincenzo Lordi, Shubhra Bansal

Abstract: Temporal variations of Cu(In,Ga)Se$_2$ photovoltaic device properties during light exposure at various temperatures and voltage biases for times up to 100 h were analyzed using the kinetic theory of large lattice relaxations. Open-circuit voltage and p-type do** increased with charge injection and decreased with temperature at low injection conditions. Lattice relaxation can account for both tre… ▽ More Temporal variations of Cu(In,Ga)Se$_2$ photovoltaic device properties during light exposure at various temperatures and voltage biases for times up to 100 h were analyzed using the kinetic theory of large lattice relaxations. Open-circuit voltage and p-type do** increased with charge injection and decreased with temperature at low injection conditions. Lattice relaxation can account for both trends and activation energies extracted from the data were approximately 0.9 and 1.2 eV for devices with lower and higher sodium content, respectively. In these devices, increased sodium content resulted in higher initial p-type do** with greater stability. First principles calculations providing revised activation energies for the ($V_{Se}-V_{Cu}$) complex suggest that this defect does not account for the metastability observed here. △ Less

Submitted 11 November, 2019; originally announced November 2019.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. Applied 13, 024025 (2020)

vdW-corrected density functional study of electric field noise heating in ion traps caused by electrode surface adsorbates

Authors: Keith G. Ray, Brenda M. Rubenstein, Wenze Gu, Vincenzo Lordi

Abstract: In order to realize the full potential of ion trap quantum computers, an improved understanding is required of the motional heating that trapped ions experience. Experimental studies of the temperature-, frequency-, and ion--electrode distance-dependence of the electric field noise responsible for motional heating, as well as the noise before and after ion bombardment cleaning of trap electrodes,… ▽ More In order to realize the full potential of ion trap quantum computers, an improved understanding is required of the motional heating that trapped ions experience. Experimental studies of the temperature-, frequency-, and ion--electrode distance-dependence of the electric field noise responsible for motional heating, as well as the noise before and after ion bombardment cleaning of trap electrodes, suggest that fluctuations of adsorbate dipoles are a likely source of so-called `anomalous heating,' or motional heating of the trapped ions at a rate much higher than the Johnson noise limit. Previous computational studies have investigated how the fluctuation of model adsorbate dipoles affects anomalous heating. However, the way in which specific adsorbates affect the electric field noise has not yet been examined, and an electric dipole model employed in previous studies is only accurate for a small subset of possible adsorbates. Here, we analyze the behavior of both in-plane and out-of-plane vibrational modes of fifteen adsorbate--electrode combinations within the independent fluctuating dipole model, utilizing accurate first principles computational methods to determine the surface-induced dipole moments. We find the chemical specificity of the adsorbate can change the electric field noise by seven orders of magnitude and specifically that soft in-plane modes of weakly-adsorbed hydrocarbons produce the greatest noise and ion heating. We discuss the dynamics captured by the fluctuating dipole model, namely the adsorbate dependent turn-on temperature and electric field noise magnitude, and also discuss the model's failure to reproduce the measured 1/$ω$ noise frequency scaling with a single adsorbate species. We suggest future research directions for improved, quantitatively predictive models based on extensions of the present framework to multiple interacting adsorbates. △ Less

Submitted 11 April, 2019; v1 submitted 24 October, 2018; originally announced October 2018.

Electric-field noise from thermally-activated fluctuators in a surface ion trap

Authors: Crystal Noel, Maya Berlin-Udi, Clemens Matthiesen, Jessica Yu, Yi Zhou, Vincenzo Lordi, Hartmut Häffner

Abstract: We probe electric-field noise near the metal surface of an ion trap chip in a previously unexplored high-temperature regime. We observe a non-trivial temperature dependence with the noise amplitude at 1-MHz frequency saturating around 500~K. Measurements of the noise spectrum reveal a $1/f^{α\approx1}$-dependence and a small decrease in $α$ between low and high temperatures. This behavior can be e… ▽ More We probe electric-field noise near the metal surface of an ion trap chip in a previously unexplored high-temperature regime. We observe a non-trivial temperature dependence with the noise amplitude at 1-MHz frequency saturating around 500~K. Measurements of the noise spectrum reveal a $1/f^{α\approx1}$-dependence and a small decrease in $α$ between low and high temperatures. This behavior can be explained by considering noise from a distribution of thermally-activated two-level fluctuators with activation energies between 0.35~eV and 0.65~eV. Processes in this energy range may be relevant to understanding electric-field noise in ion traps; for example defect motion in the solid state and surface adsorbate binding energies. Studying these processes may aid in identifying the origin of excess electric-field noise in ion traps -- a major source of ion motional decoherence limiting the performance of surface traps as quantum devices. △ Less

Submitted 4 June, 2019; v1 submitted 14 September, 2018; originally announced September 2018.

Comments: Version accepted by PRA, significantly expanded compared to v1

Journal ref: Phys. Rev. A 99, 063427 (2019)

Anomalous Diffusion along Metal/Ceramic Interfaces

Authors: Aakash Kumar, Hagit Barda, Leonid Klinger, Michael W. Finnis, Vincenzo Lordi, Eugen Rabkin, David J. Srolovitz

Abstract: Hole formation in a polycrystalline Ni film on an $α$-Al$_2$O$_3$ substrate coupled with a continuum diffusion analysis demonstrates that Ni diffusion along the Ni/$α$-Al$_2$O$_3$ interface is surprisingly fast. Ab initio calculations demonstrate that both Ni vacancy formation and migration energies at the coherent Ni/$α$-Al$_2$O$_3$ interface are much smaller than in bulk Ni, suggesting that the… ▽ More Hole formation in a polycrystalline Ni film on an $α$-Al$_2$O$_3$ substrate coupled with a continuum diffusion analysis demonstrates that Ni diffusion along the Ni/$α$-Al$_2$O$_3$ interface is surprisingly fast. Ab initio calculations demonstrate that both Ni vacancy formation and migration energies at the coherent Ni/$α$-Al$_2$O$_3$ interface are much smaller than in bulk Ni, suggesting that the activation energy for diffusion along coherent Ni/$α$-Al$_2$O$_3$ interfaces is comparable to that along (incoherent/high angle) grain boundaries. Based on these results, we develop a simple model for diffusion along metal/ceramic interfaces, apply to a wide range of metal/ceramic systems and validate it with several ab initio calculations. These results suggest that fast metal diffusion along metal/ceramic interfaces should be common, but is not universal. △ Less

Submitted 12 July, 2018; originally announced July 2018.

Thermodynamics of the SmCo5 compound doped with Fe and Ni: an ab initio study

Authors: A. Landa, P. Söderlind, D. Parker, D. Åberg, V. Lordi, A. Perron, P. E. A. Turchi, R. K. Chouhan, D. Paudyal, T. A. Lograsso

Abstract: SmCo5 permanent magnets exhibit enormous uniaxial magnetocrystalline anisotropy energy and have a high Curie temperature. However, a low energy product presents a significant drawback in the performance of SmCo5 permanent magnets. In order to increase the energy product in SmCo5, we propose substituting fixed amount of cobalt with iron in a new magnet, SmFe3CoNi, where inclusion of nickel metal ma… ▽ More SmCo5 permanent magnets exhibit enormous uniaxial magnetocrystalline anisotropy energy and have a high Curie temperature. However, a low energy product presents a significant drawback in the performance of SmCo5 permanent magnets. In order to increase the energy product in SmCo5, we propose substituting fixed amount of cobalt with iron in a new magnet, SmFe3CoNi, where inclusion of nickel metal makes this magnet thermodynamically stable. We further discuss some basic theoretical magnetic properties of the SmCo5 compound. △ Less

Submitted 28 July, 2017; originally announced July 2017.

Comments: 12 pages, 8 figures, 12 tables

Report number: LLNL-JRNL-714797

Lithium Ion Solvation and Diffusion in Bulk Organic Electrolytes from First Principles and Classical Reactive Molecular Dynamics

Authors: Mitchell T. Ong, Osvalds Verners, Erik W. Draeger, Adri C. T. van Duin, Vincenzo Lordi, John E. Pask

Abstract: Lithium-ion battery performance is strongly influenced by the ionic conductivity of the electrolyte, which depends on the speed at which Li ions migrate across the cell and relates to their solvation structure. The choice of solvent can greatly impact both solvation and diffusivity of Li ions. We use first principles molecular dynamics to examine the solvation and diffusion of Li ions in the bulk… ▽ More Lithium-ion battery performance is strongly influenced by the ionic conductivity of the electrolyte, which depends on the speed at which Li ions migrate across the cell and relates to their solvation structure. The choice of solvent can greatly impact both solvation and diffusivity of Li ions. We use first principles molecular dynamics to examine the solvation and diffusion of Li ions in the bulk organic solvents ethylene carbonate (EC), ethyl methyl carbonate (EMC), and a mixture of EC/EMC. We find that Li ions are solvated by either carbonyl or ether oxygen atoms of the solvents and sometimes by the PF$_6^-$ anion. Li$^+$ prefers a tetrahedrally-coordinated first solvation shell regardless of which species are involved, with the specific preferred solvation structure dependent on the organic solvent. In addition, we calculate Li diffusion coefficients in each electrolyte, finding slightly larger diffusivities in the linear carbonate EMC compared to the cyclic carbonate EC. The magnitude of the diffusion coefficient correlates with the strength of Li$^+$ solvation. Corresponding analysis for the PF$_6^-$ anion shows greater diffusivity associated with a weakly-bound, poorly defined first solvation shell. These results may be used to aid in the design of new electrolytes to improve Li-ion battery performance. △ Less

Submitted 26 February, 2015; originally announced February 2015.

Comments: 31 pages, 12 figures, Published in the Journal of Physical Chemistry B

Journal ref: M. T. Ong, O. Verners, E. W. Draeger, A. C. T. van Duin, V. Lordi, J. E. Pask, J. Phys. Chem. B, 119 (4), 1535-1545 (2015)

Magnetic fluctuation from oxygen deficiency centers on the SiO$_2$ surface

Authors: Nicole Adelstein, Donghwa Lee, Jonathan L. DuBois, Vincenzo Lordi

Abstract: The magnetic stability of oxygen deficiency centers on the surface of α-quartz is investigated with first- principles calculations to understand their role in contributing to magnetic flux noise in superconducting qubits (SQs) and superconducting quantum interference devices (SQUIDs) fabricated on amorphous silica substrates. Magnetic defects on the substrate are likely responsible for some of the… ▽ More The magnetic stability of oxygen deficiency centers on the surface of α-quartz is investigated with first- principles calculations to understand their role in contributing to magnetic flux noise in superconducting qubits (SQs) and superconducting quantum interference devices (SQUIDs) fabricated on amorphous silica substrates. Magnetic defects on the substrate are likely responsible for some of the 1/f noise that plagues these systems. Dangling-bonds associated with three-coordinated Si atoms allow electron density transfer between spin up and down channels, resulting in low energy magnetic states. Such under-coordinated Si defects are common in both stoichiometric and oxygen deficient silica and quartz and are a probable source of magnetic flux fluctuations in SQs and SQUIDs. △ Less

Submitted 4 March, 2014; originally announced March 2014.

Electronic and optical properties of GaSb:N from first principles

Authors: Priyamvada Jadaun, Hari P. Nair, Vincenzo Lordi, Seth R. Bank, Sanjay K. Banerjee

Abstract: GaSb:N displays promise towards realization of optoelectronic devices accessing the mid-infrared wavelength regime. Theoretical and experimental results on its electronic and optical properties are however few. To address this, we present a first principles, density functional theory study using the hybrid HSE06 exchange-correlation functional of GaSb doped with 1.6$\%$ nitrogen. To study dilute-n… ▽ More GaSb:N displays promise towards realization of optoelectronic devices accessing the mid-infrared wavelength regime. Theoretical and experimental results on its electronic and optical properties are however few. To address this, we present a first principles, density functional theory study using the hybrid HSE06 exchange-correlation functional of GaSb doped with 1.6$\%$ nitrogen. To study dilute-nitrides with small band gaps, the local density approximation (LDA) is insufficient and more accurate techniques such as HSE06 are needed. We conduct a comparative study on GaAs:N, also with 1.6$\%$ nitrogen mole fraction, and find that GaSb:N has a smaller band gap and displays more band gap bowing than GaAs:N. In addition we examine the orbital character of the bands, finding the lowest conduction band to be quasi-delocalized, with a large N-$3s$ contribution. At high concentrations, the N atoms interact via the host matrix, forming a dispersive band of their own which governs optoelectronic properties and dominates band gap bowing. While this band drives the optical and electronic properties of GaSb:N, its physics is not captured by traditional models for dilute-nitrides. We thus propose that a complete theory of dilute-nitrides should incorporate orbital character examination, especially at high N concentrations. △ Less

Submitted 5 March, 2014; v1 submitted 1 August, 2013; originally announced August 2013.

Contributions of point defects, chemical disorder, and thermal vibrations to electronic properties of Cd(1-x)Zn(x)Te alloys

Authors: Daniel Åberg, Paul Erhart, Vincenzo Lordi

Abstract: We present a first principles study based on density functional theory of thermodynamic and electronic properties of the most important intrinsic defects in the semiconductor alloy Cd(1-x)Zn(x)Te with x<0.13. The alloy is represented by a set of supercells with disorder on the Cd/Zn sublattice. Defect formation energies as well as electronic and optical transition levels are analyzed as a function… ▽ More We present a first principles study based on density functional theory of thermodynamic and electronic properties of the most important intrinsic defects in the semiconductor alloy Cd(1-x)Zn(x)Te with x<0.13. The alloy is represented by a set of supercells with disorder on the Cd/Zn sublattice. Defect formation energies as well as electronic and optical transition levels are analyzed as a function of composition. We show that defect formation energies increase with Zn content with the exception of the neutral Te vacancy. This behavior is qualitatively similar to but quantitatively rather different from the effect of volumetric strain on defect properties in pure CdTe. Finally, the relative carrier scattering strengths of point defects, alloy disorder, and phonons are obtained. It is demonstrated that for realistic defect concentrations carrier mobilities are limited by phonon scattering for temperature above approximately 150 K. △ Less

Submitted 11 October, 2012; originally announced October 2012.

Report number: LLNL-JRNL-584272

Journal ref: Physical Review B 88, 045201 (2013)

Intrinsic point defects in aluminum antimonide

Authors: Daniel Åberg, Paul Erhart, Andrew J. Williamson, Vincenzo Lordi

Abstract: Calculations within density functional theory on the basis of the local density approximation are carried out to study the properties of intrinsic point defects in aluminum antimonide. Special care is taken to address finite-size effects, band gap error, and symmetry reduction in the defect structures. The correction of the band gap is based on a set of GW calculations. The most important defects… ▽ More Calculations within density functional theory on the basis of the local density approximation are carried out to study the properties of intrinsic point defects in aluminum antimonide. Special care is taken to address finite-size effects, band gap error, and symmetry reduction in the defect structures. The correction of the band gap is based on a set of GW calculations. The most important defects are identified to be the aluminum interstitial $Al_{i,Al}^{1+}$, the antimony antisites $Sb_{Al}^0$ and $Sb_{Al}^{1+}$, and the aluminum vacancy $V_{Al}^{3-}$. The intrinsic defect and charge carrier concentrations in the impurity-free material are calculated by self-consistently solving the charge neutrality equation. The impurity-free material is found to be n-type conducting at finite temperatures. △ Less

Submitted 2 September, 2010; originally announced September 2010.

Comments: 11 pages, 5 figures

Report number: UCRL-JRNL-234774

Journal ref: Phys. Rev. B 77, 165206 (2008)

Extrinsic point defects in aluminum antimonide

Authors: Paul Erhart, Daniel Åberg, Vincenzo Lordi

Abstract: We investigate thermodynamic and electronic properties of group IV (C, Si, Ge, Sn) and group VI (O, S, Se, Te) impurities as well as P and H in aluminum antimonide (AlSb) using first-principles calculations. To this end, we compute the formation energies of a broad range of possible defect configurations including defect complexes with the most important intrinsic defects. We also obtain relative… ▽ More We investigate thermodynamic and electronic properties of group IV (C, Si, Ge, Sn) and group VI (O, S, Se, Te) impurities as well as P and H in aluminum antimonide (AlSb) using first-principles calculations. To this end, we compute the formation energies of a broad range of possible defect configurations including defect complexes with the most important intrinsic defects. We also obtain relative scattering cross strengths for these defects to determine their impact on charge carrier mobility. Furthermore, we employ a self-consistent charge equilibration scheme to determine the net charge carrier concentrations for different temperatures and impurity concentrations. Thereby, we are able to study the effect of impurities incorporated during growth and identify optimal processing conditions for achieving compensated material. The key findings are summarized as follows. Among the group IV elements, C, Si, and Ge substitute for Sb and act as shallow acceptors, while Sn can substitute for either Sb or Al and displays amphoteric character. Among the group VI elements, S, Se, and Te substitute for Sb and act as deep donors. In contrast, O is most likely to be incorporated as an interstitial and predominantly acts as an acceptor. As a group V element, P substitutes for Sb and is electrically inactive. C and O are the most detrimental impurities to carrier transport, while Sn, Se, and Te have a modest to low impact. Therefore, Te can be used to compensate C and O impurities, which are unintentionally incorporated during the growth process, with minimal effect on the carrier mobilities. △ Less

Submitted 1 September, 2010; originally announced September 2010.

Comments: 12 pages, 12 figures

Report number: LLNL-JRNL-421587

Journal ref: Phys. Rev. B 81, 195216 (2010)