Showing 1–3 of 3 results for author: Lopez-Romero, D

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

Authors: S. Fernández-Garrido, J. Grandal, E. Calleja, M. A. Sánchez-García, D. López-Romero

Abstract: The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of im**ing Ga/N flux ratio and growth temperature (750-850°C).Two different growth regimes were identified: compact and nanocolumnar. A growth diagram was established as a function of growth parameters, exhibiting the transition between growth regimes, and showing und… ▽ More The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of im**ing Ga/N flux ratio and growth temperature (750-850°C).Two different growth regimes were identified: compact and nanocolumnar. A growth diagram was established as a function of growth parameters, exhibiting the transition between growth regimes, and showing under which growth conditions GaN cannot be grown due to thermal decomposition and Ga desorption. Present results indicate that adatoms diffusion length and the actual Ga/N ratio on the growing surface are key factors to achieve nanocolumnar growth. △ Less

Submitted 29 January, 2024; originally announced January 2024.

Comments: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (citation of published article) and may be found at J. Appl. Phys. 106, 126102 (2009) and may be found at https://doi.org/10.1063/1.3267151

Journal ref: JOURNAL OF APPLIED PHYSICS 106, 126102 (2009)

Magneto-transport of graphene and quantum phase transitions in the quantum Hall regime

Authors: Mario Amado, Enrique Diez, Francesco Rossella, Vittorio Bellani, David Lopez-Romero, Duncan K Maude

Abstract: We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals new non-universalities of the critical exponents of the plateau-insulator transition. Thes… ▽ More We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals new non-universalities of the critical exponents of the plateau-insulator transition. These exponent depends on the type of disorder that governs the electrical transport, which knowledge is important for the design and fabrication of new graphene nano-devices. △ Less

Submitted 17 April, 2012; originally announced April 2012.

Plateau insulator transition in graphene

Authors: M. Amado, E. Diez, D. López-Romero, F. Rossella, J. M. Caridad, F. Dionigi, V. Bellani, D. K. Maude

Abstract: The quantum Hall effect in a single-layer graphene sample is studied in strong magnetic fields up to 28 T. Our measurements reveal the existence of a metal- insulator transition from filling factor $ν=-2$ to $ν=0$. The value of the universal scaling exponent is found to be $κ=0.57 $ in graphene and therefore in a truly two-dimensional system. This value of $κ$ is in agreement with the accepted u… ▽ More The quantum Hall effect in a single-layer graphene sample is studied in strong magnetic fields up to 28 T. Our measurements reveal the existence of a metal- insulator transition from filling factor $ν=-2$ to $ν=0$. The value of the universal scaling exponent is found to be $κ=0.57 $ in graphene and therefore in a truly two-dimensional system. This value of $κ$ is in agreement with the accepted universal value for the plateau-insulator transitions in standard quasi two-dimensional electron and hole gases. △ Less

Submitted 30 March, 2010; v1 submitted 9 July, 2009; originally announced July 2009.

Comments: 10 pages, 5 figures