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Potential Energy Landscape of a Flexible Water Model: Equation-of-State, Configurational Entropy, and Adam-Gibbs Relationship
Authors:
Ali Eltareb,
Gustavo E. Lopez,
Nicolas Giovambattista
Abstract:
The potential energy landscape (PEL) formalism is a tool within statistical mechanics that has been used in the past to calculate the equation of states (EOS) of classical rigid model liquids at low temperatures, where computer simulations may be challenging. In this work, we use classical molecular dynamics (MD) simulations and the PEL formalism to calculate the EOS of the flexible q-TIP4P/F wate…
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The potential energy landscape (PEL) formalism is a tool within statistical mechanics that has been used in the past to calculate the equation of states (EOS) of classical rigid model liquids at low temperatures, where computer simulations may be challenging. In this work, we use classical molecular dynamics (MD) simulations and the PEL formalism to calculate the EOS of the flexible q-TIP4P/F water model. This model exhibits a liquid-liquid critical point (LLCP) in the supercooled regime, at ($P_c = 150$ MPa, $T_c = 190$ K, $ρ_c = 1.04$ g/cm$^3$) [using the reaction field technique]. The PEL-EOS of q-TIP4P/F water, and the corresponding location of the LLCP, are in very good agreement with the MD simulations. We show that the PEL of q-TIP4P/F water is Gaussian which allows us to calculate the configurational entropy of the system, $S_{conf}$. The $S_{conf}$ of q-TIP4P/F water is surprisingly similar to that reported previously for rigid water models, suggesting that intramolecular flexibility does not necessarily add roughness to the PEL. We also show that the Adam-Gibbs relation, which relates the diffusion coefficient $D$ with $S_{conf}$, holds for the flexible q-TIP4P/F water model. Overall, our results indicate that the PEL formalism can be used to study molecular systems that include molecular flexibility, the common case in standard force fields. This is not trivial since the introduction of large bending/stretching mode frequencies is problematic in classical statistical mechanics. For example, as shown previously, we find that such high-frequencies lead to an unphysical (negative) entropy for q-TIP4P/F water (yet the PEL formalism can be applied successfully).
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Submitted 17 January, 2024;
originally announced January 2024.
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Design and Development of a Remotely-enabled Modular Release Mechanism for Autonomous Underwater Vehicles
Authors:
Demetrious T. Kutzke,
Gustavo E. Miranda López,
Robert J. Herman,
Harryel Philippeaux
Abstract:
We introduce a launch device, called the remotely-enabled modular release mechanism, to augment rapid testing and prototy** of cooperative autonomy maritime applications by facilitating autonomous deployment of an autonomous underwater vehicle (AUV) from an autonomous surface vessel (ASV). While we focus our development on a specific application of deploying an AUV from a catamaran style ASV, th…
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We introduce a launch device, called the remotely-enabled modular release mechanism, to augment rapid testing and prototy** of cooperative autonomy maritime applications by facilitating autonomous deployment of an autonomous underwater vehicle (AUV) from an autonomous surface vessel (ASV). While we focus our development on a specific application of deploying an AUV from a catamaran style ASV, the release mechanism can be adapted to different deployable objects and towing vehicles, such as buoys and sensors for oceanographic surveys or mono-hull ASVs. In this paper we explore a number of hardware and software design considerations to facilitate ease of integration with existing maritime autonomy systems. We expound on bench tests and in-water tests used to explore the utility of the release system and diagnose system issues. Additionally, we make a first-principles argument, based on a hydrodynamics physics model, for assured deployment that is virtually independent of sea state, making the release system a suitable alternative for different maritime applications in varying environmental conditions.
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Submitted 8 January, 2024;
originally announced January 2024.
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Superconductivity in correlated carbon nanotubes under pressure: A Bogoliubov-de Gennes study
Authors:
Germán E. López,
Chumin Wang
Abstract:
In contrast to most microscopic theories of superconductivity based on the reciprocal space, the Bogoliubov-de Gennes (BdG) formalism provides a real-space alternative for addressing inhomogeneous systems. In this article, we study the superconducting states in correlated single-walled carbon nanotubes (SWNTs) with curvature and spin-orbit corrections, as well as the inter-tube interaction through…
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In contrast to most microscopic theories of superconductivity based on the reciprocal space, the Bogoliubov-de Gennes (BdG) formalism provides a real-space alternative for addressing inhomogeneous systems. In this article, we study the superconducting states in correlated single-walled carbon nanotubes (SWNTs) with curvature and spin-orbit corrections, as well as the inter-tube interaction through a connecting molecule using an attractive Hubbard model. The results reveal a close relationship between the on-site superconducting gap and the single-electron local density of states. For the limiting case of independent large-diameter nanotubes, the BdG equations can be reduced to the standard Bardeen-Cooper-Schrieffer one with analytical solutions. Moreover, an optimal separation between nanotubes is found, which leads to a maximal superconducting critical temperature. This finding has a remarkable accordance with the experimental data obtained from Buckypapers built of boron doped SWNTs under external pressure.
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Submitted 19 December, 2023; v1 submitted 10 December, 2023;
originally announced December 2023.
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Structural and magnetic properties of molecular beam epitaxy (MnSb2Te4)x(Sb2Te3)1-x topological materials with exceedingly high Curie temperature
Authors:
Candice R. Forrester,
Christophe Testelin,
Kaushini Wickramasinghe,
Ido Levy,
Dominique Demaille,
David Hrabovski,
Xiaxin Ding,
Lia Krusin-Elbaum,
Gustavo E. Lopez,
Maria C. Tamargo
Abstract:
Tuning magnetic properties of magnetic topological materials is of interest to realize elusive physical phenomena such as quantum anomalous hall effect (QAHE) at higher temperatures and design topological spintronic devices. However, current topological materials exhibit Curie temperature (TC) values far below room temperature. In recent years, significant progress has been made to control and opt…
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Tuning magnetic properties of magnetic topological materials is of interest to realize elusive physical phenomena such as quantum anomalous hall effect (QAHE) at higher temperatures and design topological spintronic devices. However, current topological materials exhibit Curie temperature (TC) values far below room temperature. In recent years, significant progress has been made to control and optimize TC, particularly through defect engineering of these structures. Most recently we showed evidence of TC values up to 80K for (MnSb2Te4)x(Sb2Te3)1-x, where x is greater than or equal to 0.7 and less than or equal to 0.85, by controlling the compositions and Mn content in these structures. Here we show further enhancement of the TC, as high as 100K, by maintaining high Mn content and reducing the growth rate from 0.9 nm/min to 0.5 nm/min. Derivative curves reveal the presence of two TC components contributing to the overall value and propose TC1 and TC2 have distinct origins: excess Mn in SLs and Mn in Sb2-yMnyTe3QLs alloys, respectively. In pursuit of elucidating the mechanisms promoting higher Curie temperature values in this system, we show evidence of structural disorder where Mn is occupying not only Sb sites but also Te sites, providing evidence of significant excess Mn and a new crystal structure:(Mn1+ySb2-yTe4)x(Sb2-yMnyTe3)1-x. Our work shows progress in understanding how to control magnetic defects to enhance desired magnetic properties and the mechanism promoting these high TC in magnetic topological materials such as (Mn1+ySb2-yTe4)x(Sb2-yMnyTe3)1-x.
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Submitted 17 November, 2023;
originally announced November 2023.
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Ab-initio investigation of Er3+ defects in tungsten disulfide
Authors:
Gabriel I. López-Morales,
Alexander Hampel,
Gustavo E. López,
Vinod M. Menon,
Johannes Flick,
Carlos A. Meriles
Abstract:
We use density functional theory (DFT) to explore the physical properties of an $Er_{ W}$ point defect in monolayer $WS_{ 2}$. Our calculations indicate that electrons localize at the dangling bonds associated with a tungsten vacancy ($V_{W}$) and at the $Er^{ 3+}$ ion site, even in the presence of a net negative charge in the supercell. The system features a set of intra-gap defect states, some o…
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We use density functional theory (DFT) to explore the physical properties of an $Er_{ W}$ point defect in monolayer $WS_{ 2}$. Our calculations indicate that electrons localize at the dangling bonds associated with a tungsten vacancy ($V_{W}$) and at the $Er^{ 3+}$ ion site, even in the presence of a net negative charge in the supercell. The system features a set of intra-gap defect states, some of which are reminiscent of those present in isolated $Er^{ 3+}$ ions. In both instances, the level of hybridization is low, i.e., orbitals show either strong Er or W character. Through the calculation of the absorption spectrum as a function of wavelength, we identify a broad set of transitions, including one possibly consistent with the $Er^{ 3+}$ $4I_{ 15/2} \rightarrow 4I_{ 13/2}$ observed in other hosts. Combined with the low native concentration of spin-active nuclei as well as the two-dimensional nature of the host, these properties reveal $Er:WS_{ 2}$ as a potential platform for realizing spin qubits that can be subsequently integrated with other nanoscale optoelectronic devices.
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Submitted 28 January, 2022;
originally announced January 2022.
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Investigation of photon emitters in Ce-implanted hexagonal boron nitride
Authors:
Gabriel I. López-Morales,
Mingxing Li,
Alexander Hampel,
Sitakanta Satapathy,
Nicholas V. Proscia,
Harishankar Jayakumar,
Artur Lozovoi,
Daniela Pagliero,
Gustavo E. Lopez,
Vinod M. Menon,
Johannes Flick,
Carlos A. Meriles
Abstract:
Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a small percentage of the emitters studied thus far has the properties required to serve as optically addressable spin qubits. Here, we use confocal fluorescence mi…
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Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a small percentage of the emitters studied thus far has the properties required to serve as optically addressable spin qubits. Here, we use confocal fluorescence microscopy at variable temperature to study a new class of point defects produced via cerium ion implantation in thin hBN flakes. We find that, to a significant fraction, emitters show bright room-temperature emission, and good optical stability suggesting the formation of Ce-based point defects. Using density functional theory (DFT) we calculate the emission properties of candidate emitters, and single out the CeVB center - formed by an interlayer Ce atom adjacent to a boron vacancy - as one possible microscopic model. Our results suggest an intriguing route to defect engineering that simultaneously exploits the singular properties of rare-earth ions and the versatility of two-dimensional material hosts.
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Submitted 2 October, 2021;
originally announced October 2021.
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Toward the Identification of Atomic Defects in Hexagonal Boron Nitride: X-Ray Photoelectron Spectroscopy and First-Principles Calculations
Authors:
Gabriel I. López-Morales,
Nicholas V. Proscia,
Gustavo E. López,
Carlos A. Meriles,
Vinod M. Menon
Abstract:
Defects in hexagonal boron nitride (hBN) exhibit single-photon emission (SPE) and are thus attracting broad interest as platforms for quantum information and spintronic applications. However, the atomic structure and the specific impact of the local environment on the defect physical properties remain elusive. Here we articulate X-ray photoelectron spectroscopy (XPS) and first-principles calculati…
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Defects in hexagonal boron nitride (hBN) exhibit single-photon emission (SPE) and are thus attracting broad interest as platforms for quantum information and spintronic applications. However, the atomic structure and the specific impact of the local environment on the defect physical properties remain elusive. Here we articulate X-ray photoelectron spectroscopy (XPS) and first-principles calculations to discern the experimentally-observed point defects responsible for the quantum emission observed in hBN. XPS measurements show a broad band, which was deconvolved and then assigned to $N_{B}V_{N}$, $V_{N}$, $C_{B}$, $C_{B}V_{N}$, and $O_{2B}V_{N}$ defect structures using Density Functional Theory (DFT) core-level binding energy (BE) calculations.
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Submitted 14 November, 2018;
originally announced November 2018.
