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Nitrogen magneto-ionics
Authors:
Julius de Rojas,
Alberto Quintana,
Aitor Lopeandía,
Joaquín Salguero,
Beatriz Muñiz,
Fatima Ibrahim,
Mairbek Chshiev,
Maciej O. Liedke,
Maik Butterling,
Andreas Wagner,
Veronica Sireus,
Llibertat Abad,
Christopher J. Jensen,
Kai Liu,
Josep Nogués,
José L. Costa-Krämer,
Enric Menéndez,
Jordi Sort
Abstract:
So far, magneto-ionics, understood as voltage-driven ion transport in magnetic materials, has largely relied on controlled migration of oxygen ion/vacancy and, to a lesser extent, lithium and hydrogen. Here, we demonstrate efficient, room-temperature, voltage-driven nitrogen transport (i.e., nitrogen magneto-ionics) by electrolyte-gating of a single CoN film (without an ion-reservoir layer). Nitro…
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So far, magneto-ionics, understood as voltage-driven ion transport in magnetic materials, has largely relied on controlled migration of oxygen ion/vacancy and, to a lesser extent, lithium and hydrogen. Here, we demonstrate efficient, room-temperature, voltage-driven nitrogen transport (i.e., nitrogen magneto-ionics) by electrolyte-gating of a single CoN film (without an ion-reservoir layer). Nitrogen magneto-ionics in CoN is compared to oxygen magneto-ionics in Co3O4, both layers showing a nanocrystalline face-centered-cubic structure and reversible voltage-driven ON-OFF ferromagnetism. In contrast to oxygen, nitrogen transport occurs uniformly creating a plane-wave-like migration front, without assistance of diffusion channels. Nitrogen magneto-ionics requires lower threshold voltages and exhibits enhanced rates and cyclability. This is due to the lower activation energy for ion diffusion and the lower electronegativity of nitrogen compared to oxygen. These results are appealing for the use of magneto-ionics in nitride semiconductor devices, in applications requiring endurance and moderate speeds of operation, such as brain-inspired computing.
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Submitted 24 March, 2020;
originally announced March 2020.
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Boosting room temperature magneto-ionics in Co3O4
Authors:
Julius de Rojas,
Alberto Quintana,
Aitor Lopeandía,
Joaquín Salguero,
José L. Costa-Krämer,
Llibertat Abad,
Maciej O. Liedke,
Maik Butterling,
Andreas Wagner,
Lowie Henderick,
Jolien Dendooven,
Christophe Detavernier,
Jordi Sort,
Enric Menéndez
Abstract:
Voltage control of magnetism through electric field-induced oxygen motion (magneto-ionics) could represent a significant breakthrough in the pursuit for new strategies to enhance energy efficiency in a large variety of magnetic devices, such as magnetic micro-electro-mechanical systems (MEMS), magnetic logics, spin electronics, or neuromorphic computing, i.e., envisaging ultra-low power emulation…
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Voltage control of magnetism through electric field-induced oxygen motion (magneto-ionics) could represent a significant breakthrough in the pursuit for new strategies to enhance energy efficiency in a large variety of magnetic devices, such as magnetic micro-electro-mechanical systems (MEMS), magnetic logics, spin electronics, or neuromorphic computing, i.e., envisaging ultra-low power emulation of the biological synapse. Boosting the induced changes in magnetization, magneto-ionic motion and cyclability (endurance) continue to be key challenges to turn magneto-ionic phenomena into real applications. Here, we demonstrate that, without degrading cyclability, room temperature magneto-ionic motion in electrolyte-gated paramagnetic and fairly thick (> 100 nm) Co3O4 films largely depends on the configuration used to apply the electric field. In particular, magneto-ionic effects are significantly increased both in terms of generated magnetization (6 times larger: from 118.5 to 699.2 emu cm-3) and speed (35 times faster: from 33.1 to 1170.8 emu cm-3 h-1) if the electric field is applied across a conducting buffer layer (grown underneath the Co3O4 films), instead of directly contacting Co3O4. This is attributed to a greater uniformity and strength of the applied electric field when using the conducting layer. These results may trigger the use of oxygen magneto-ionics into promising new technologies, such as magnetic MEMS or brain-inspired computing, which require endurance and moderate speeds of operation.
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Submitted 22 January, 2020;
originally announced January 2020.
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Growth monitoring with sub-monolayer sensitivity via real time thermal conductance measurements
Authors:
P. Ferrando-Villalba,
D. Takegami,
Ll. Abad,
J. Ràfols-Ribé,
A. Lopeandía,
G. Garcia,
J. Rodríguez-Viejo
Abstract:
Growth monitoring during the early stages of film formation is of prime importance to understand the growth process, the microstructure and thus the overall layer properties. In this work, we demonstrate that phonons can be used as sensitive probes to monitor real time evolution of film microstructure during growth, from incipient clustering to continuous film formation. For that purpose, a silico…
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Growth monitoring during the early stages of film formation is of prime importance to understand the growth process, the microstructure and thus the overall layer properties. In this work, we demonstrate that phonons can be used as sensitive probes to monitor real time evolution of film microstructure during growth, from incipient clustering to continuous film formation. For that purpose, a silicon nitride membrane-based sensor has been fabricated to measure in-plane thermal conductivity of thin film samples. Operating with the 3ω-Völklein method at low frequencies, the sensor shows an exceptional resolution down to Δ(κ*t)=0.065 nm*W/(m*K), enabling accurate measurements. Validation of the sensor performance is done with organic and metallic thin films. In both cases, at early stages of growth, we observe an initial reduction of the effective thermal conductance of the supporting amorphous membrane, K, related with the surface phonon scattering enhanced by the incipient nanoclusters formation. As clusters develop, K reaches a minimum at the percolation threshold. Subsequent island percolation produces a sharp increase of the conductance and once the surface coverage is completed K increases linearly with thickness The thermal conductivity of the deposited films is obtained from the variation of K with thickness.
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Submitted 16 March, 2018;
originally announced March 2018.
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Evidence of thermal transport anisotropy in stable glasses of vapour deposited organic molecules
Authors:
Joan Ràfols-Ribé,
Riccardo Dettori,
Pablo Ferrando-Villalba,
Marta Gonzalez-Silveira,
Llibertat Abad,
Aitor Lopeandía,
Luciano Colombo,
Javier Rodríguez-Viejo
Abstract:
Vapour-deposited organic glasses are currently in use in many optoelectronic devices. Their operation temperature is limited by the glass transition temperature of the organic layers and thermal management strategies become increasingly important to improve the lifetime of the device. Here we report the unusual finding that molecular orientation heavily influences heat flow propagation in glassy f…
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Vapour-deposited organic glasses are currently in use in many optoelectronic devices. Their operation temperature is limited by the glass transition temperature of the organic layers and thermal management strategies become increasingly important to improve the lifetime of the device. Here we report the unusual finding that molecular orientation heavily influences heat flow propagation in glassy films of small molecule organic semiconductors. The thermal conductivity of vapour-deposited thin-film semiconductor glasses is anisotropic and controlled by the deposition temperature. We compare our data with extensive molecular dynamics simulations to disentangle the role of density and molecular orientation on heat propagation. Simulations do support the view that thermal transport along the backbone of the organic molecule is strongly preferred with respect to the perpendicular direction. This is due to the anisotropy of the molecular interaction strength that limit the transport of atomic vibrations. This approach could be used in future developments to implement small molecule glassy films in thermoelectric or other organic electronic devices.
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Submitted 27 October, 2017;
originally announced October 2017.
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Thermal conductivity of bulk and nanoscaled Si/Ge alloys from the Kinetic Collective Model
Authors:
P. Torres,
C. de Tomas,
A. Lopeandia,
X. Cartoixà,
X. Alvarez
Abstract:
Several hitherto unexplained features of thermal conductivity in group IV materials, such as the change in the slope as a function of sample size for pure vs. alloyed samples and the fast decay in thermal conductivity for low impurity concentration, are described in terms of a transition from a collective to kinetic regime in phonon transport. We show that thermal transport in pure bulk silicon sa…
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Several hitherto unexplained features of thermal conductivity in group IV materials, such as the change in the slope as a function of sample size for pure vs. alloyed samples and the fast decay in thermal conductivity for low impurity concentration, are described in terms of a transition from a collective to kinetic regime in phonon transport. We show that thermal transport in pure bulk silicon samples is mainly collective, and that impurity/alloy and boundary scattering are responsible for the destruction of this regime with an associated strong reduction in thermal conductivity, leaving kinetic transport as the only one allowed when those resistive scattering mechanisms are dominant.
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Submitted 3 September, 2015; v1 submitted 4 June, 2015;
originally announced June 2015.
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Thermal conductivity of group-IV Semiconductors from a Kinetic-Collective Model
Authors:
C. de Tomas,
A. Cantarero,
A. F. Lopeandia,
F. X. Alvarez
Abstract:
The thermal conductivity of several diamond-like materials is calculated from a kinetic-collective model. From this approach, a thermal conductivity expression is obtained that includes a transition from a kinetic (free) to a collective (hydrodynamic) behavior of the phonon field. The expression contains only three parameters. Once fitted to natural occurring silicon, the same parameters for the o…
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The thermal conductivity of several diamond-like materials is calculated from a kinetic-collective model. From this approach, a thermal conductivity expression is obtained that includes a transition from a kinetic (free) to a collective (hydrodynamic) behavior of the phonon field. The expression contains only three parameters. Once fitted to natural occurring silicon, the same parameters for the other materials are directly calculated from theoretical relations. The results are in good agreement with experimental data.
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Submitted 2 February, 2014;
originally announced February 2014.
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From kinetic to collective behavior in thermal transport on semiconductors and semiconductor nanostructures
Authors:
C. de Tomas,
A. Cantarero,
A. F. Lopeandia,
F. X. Alvarez
Abstract:
We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit exp…
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We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit experimental data is changing the way to perform the average on the scattering rates. We apply the model to bulk Si with different isotopic compositions obtaining an accurate fit. Then we calculate the thermal conductivity of Si thin films and nanowires by only introducing the effective size as additional parameter. The model provides a better prediction of the thermal conductivity behavior valid for all temperatures and sizes above 30 nm with a single expression. Avoiding the introduction of confinement or quantum effects, the model permits to establish the limit of classical theories in the study of the thermal conductivity in nanoscopic systems.
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Submitted 14 February, 2014; v1 submitted 26 October, 2013;
originally announced October 2013.
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Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling
Authors:
D. Petti,
E. Albisetti,
H. Reichlová,
J. Gazquez,
M. Varela,
M. Molina-Ruiz,
A. F. Lopeandía,
K. Olejník,
V. Novák,
I. Fina,
B. Dkhil,
J. Hayakawa,
X. Marti,
J. Wunderlich,
T. Jungwirth,
R. Bertacco
Abstract:
Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magn…
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Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magnetic fields thus constituting a memory element robust against external magnetic fields. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer.
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Submitted 15 February, 2013;
originally announced February 2013.
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arXiv:0908.0609
[pdf]
cond-mat.mes-hall
cond-mat.soft
physics.bio-ph
physics.chem-ph
physics.ins-det
Thermodynamics of small systems by nanocalorimetry: from physical to biological nano-objects
Authors:
Jean-Luc Garden,
Hervé Guillou,
Aitor Fernandez Lopeandia,
Jacques Richard,
Jean-Savin Heron,
Germain Souche,
Florian Ong,
Benoit Vianay,
Olivier Bourgeois
Abstract:
Membrane based nanocalorimeters have been developed for ac calorimetry experiments. It has allowed highly sensitive measurements of heat capacity from solid state physics to complex systems like polymers and proteins. In this article we review what has been developed in ac calorimetry toward the measurement of very small systems. Firstly, at low temperature ac calorimetry using silicon membrane…
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Membrane based nanocalorimeters have been developed for ac calorimetry experiments. It has allowed highly sensitive measurements of heat capacity from solid state physics to complex systems like polymers and proteins. In this article we review what has been developed in ac calorimetry toward the measurement of very small systems. Firstly, at low temperature ac calorimetry using silicon membrane permits the measurement of superconducting sample having geometry down to the nanometer scale. New phase transitions have been found in these nanosystems illustrated by heat capacity jumps versus the applied magnetic field. Secondly, a sensor based on ultra-thin polymer membrane will be presented. It has been devoted to thermal measurements of nanomagnetic systems at intermediate temperature (20K to 300K). Thirdly, three specific polyimide membrane based sensors have been designed for room temperature measurements. One is devoted to phase transitions detection in polymer, the second one to protein folding/unfolding studies and the third one will be used for the study of heat release in living cells. The possibility of measuring systems out of equilibrium will be emphasized.
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Submitted 5 August, 2009;
originally announced August 2009.