Showing 1–2 of 2 results for author: Lonnemann, J G
-
Closing the gap between spatial and spin dynamics of electrons at the metal-to-insulator transition
Authors:
J. G. Lonnemann,
E. P. Rugeramigabo,
M. Oestreich,
J. Hübner
Abstract:
We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex contributions to the spin relaxation at the metal-to-insulator transition (MIT). Just below the MIT, the interplay between hop** induced loss of spin coherence and hy…
▽ More
We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex contributions to the spin relaxation at the metal-to-insulator transition (MIT). Just below the MIT, the interplay between hop** induced loss of spin coherence and hyperfine interaction yields a maximum spin lifetime exceeding 800~ns. At slightly higher do** concentrations, however, the spin relaxation deviates from the expected Dyakonov-Perel mechanism which is consistently explained by a reduction of the effective motional narrowing with increasing do** concentration. The reduction is attributed to the change of the dominant momentum scattering mechanism in the metallic impurity band where scattering by local conductivity domain boundaries due to the intrinsic random distribution of donors becomes significant. Here, we fully identify and model all intricate contributions of the relevant microscopic scattering mechanisms which allows the complete quantitative modeling of the electron spin relaxation in the entire regime from weakly interacting up to fully delocalized electrons.
△ Less
Submitted 2 June, 2017;
originally announced June 2017.
-
Ultrahigh Bandwidth Spin Noise Spectroscopy: Detection of Large g-Factor Fluctuations in Highly n-Doped GaAs
Authors:
Fabian Berski,
Hendrik Kuhn,
Jan G. Lonnemann,
Jens Hübner,
Michael Oestreich
Abstract:
We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of several hundred gigahertz by employing an ingenious scheme of pulse trains from ultrafast laser oscillators as an optical probe. The ultrafast SNS technique avoids the need for optical pum** and enables nearly perturbation free measurements of extremely short spin dephasing times. We employ the tech…
▽ More
We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of several hundred gigahertz by employing an ingenious scheme of pulse trains from ultrafast laser oscillators as an optical probe. The ultrafast SNS technique avoids the need for optical pum** and enables nearly perturbation free measurements of extremely short spin dephasing times. We employ the technique to highly n-doped bulk GaAs where magnetic field dependent measurements show unexpected large g-factor fluctuations. Calculations suggest that such large g-factor fluctuations do not necessarily result from extrinsic sample variations but are intrinsically present in every doped semiconductor due to the stochastic nature of the dopant distribution.
△ Less
Submitted 30 June, 2012;
originally announced July 2012.
