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Predicting the activity of chemical compounds based on machine learning approaches
Authors:
Do Hoang Tu,
Tran Van Lang,
Pham Cong Xuyen,
Le Mau Long
Abstract:
Exploring methods and techniques of machine learning (ML) to address specific challenges in various fields is essential. In this work, we tackle a problem in the domain of Cheminformatics; that is, providing a suitable solution to aid in predicting the activity of a chemical compound to the best extent possible. To address the problem at hand, this study conducts experiments on 100 different combi…
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Exploring methods and techniques of machine learning (ML) to address specific challenges in various fields is essential. In this work, we tackle a problem in the domain of Cheminformatics; that is, providing a suitable solution to aid in predicting the activity of a chemical compound to the best extent possible. To address the problem at hand, this study conducts experiments on 100 different combinations of existing techniques. These solutions are then selected based on a set of criteria that includes the G-means, F1-score, and AUC metrics. The results have been tested on a dataset of about 10,000 chemical compounds from PubChem that have been classified according to their activity
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Submitted 10 September, 2023;
originally announced January 2024.
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Flexible MgO barrier magnetic tunnel junctions
Authors:
Li Ming Loong,
Wonho Lee,
Xuepeng Qiu,
** Yang,
Hiroyo Kawai,
Mark Saeys,
Jong-Hyun Ahn,
Hyunsoo Yang
Abstract:
Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible electronics. Here, we present flexible MgO barrier magnetic tunnel junction (MTJ) devices fabricated using a transfer printing process, which exhibit reliable and sta…
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Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible electronics. Here, we present flexible MgO barrier magnetic tunnel junction (MTJ) devices fabricated using a transfer printing process, which exhibit reliable and stable operation under substantial deformation of the device substrates. In addition, the flexible MTJ devices yield significantly enhanced tunneling magnetoresistance (TMR) of ~300 % and improved abruptness of switching, as residual strain in the MTJ structure induced by the fabrication process is released during the transfer process. This approach could be useful for a wide range of flexible electronic systems that require high performance memory components.
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Submitted 12 March, 2016;
originally announced March 2016.
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Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions
Authors:
Li Ming Loong,
Xuepeng Qiu,
Zhi Peng Neo,
Praveen Deorani,
Yang Wu,
Charanjit S. Bhatia,
Mark Saeys,
Hyunsoo Yang
Abstract:
While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tun…
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While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical strain, achieving an enhancement factor of ~2 in the experimental tunneling magnetoresistance (TMR) ratio. We further correlate this strain-enhanced TMR with coherent spin tunneling through the MgO barrier. Moreover, the strain-enhanced TMR is analyzed using non-equilibrium Green's function (NEGF) quantum transport calculations. Our results help elucidate the TMR mechanism at the atomic level and can provide a new way to enhance, as well as tune, the quantum properties in nanoscale materials and devices.
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Submitted 2 October, 2014;
originally announced October 2014.
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Investigation of the temperature-dependence of ferromagnetic resonance and spin waves in Co2FeAl0.5Si0.5
Authors:
Li Ming Loong,
Jae Hyun Kwon,
Praveen Deorani,
Chris Nga Tung Yu,
Atsufumi Hirohata,
Hyunsoo Yang
Abstract:
Co2FeAl0.5Si0.5 (CFAS) is a Heusler compound that is of interest for spintronics applications, due to its high spin polarization and relatively low Gilbert dam** constant. In this study, the behavior of ferromagnetic resonance as a function of temperature was investigated in CFAS, yielding a decreasing trend of dam** constant as the temperature was increased from 13 to 300 K. Furthermore, we s…
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Co2FeAl0.5Si0.5 (CFAS) is a Heusler compound that is of interest for spintronics applications, due to its high spin polarization and relatively low Gilbert dam** constant. In this study, the behavior of ferromagnetic resonance as a function of temperature was investigated in CFAS, yielding a decreasing trend of dam** constant as the temperature was increased from 13 to 300 K. Furthermore, we studied spin waves in CFAS using both frequency domain and time domain techniques, obtaining group velocities and attenuation lengths as high as 26 km/s and 23.3 um, respectively, at room temperature.
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Submitted 1 October, 2014;
originally announced October 2014.
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Spin-orbit torques in Co/Pd multilayer nanowires
Authors:
Mahdi Jamali,
Kulothungasagaran Narayanapillai,
Xuepeng Qiu,
Li Ming Loong,
Aurelien Manchon,
Hyunsoo Yang
Abstract:
Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (field-like) torques build up in the nanowire. The torque efficiencies are found to be as l…
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Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (field-like) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 kOe and 5 kOe at 108 A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (~ 1 nm) magnetic bilayers. We show that this result cannot be explained solely by spin Hall effect induced torque at the outer interfaces, indicating a probable contribution of the bulk of the Co/Pd multilayer.
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Submitted 13 November, 2013;
originally announced November 2013.
