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Efficient Electron Spin Relaxation by Chiral Phonons in WSe$_2$ Monolayers
Authors:
D. Lagarde,
M. Glazov,
V. **dal,
K. Mourzidis,
Iann Gerber,
A. Balocchi,
L. Lombez,
P. Renucci,
T. Taniguchi,
K. Watanabe,
C. Robert,
X. Marie
Abstract:
In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is…
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In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is known about the intra-valley spin relaxation processes. In this work we have performed stationary and time-resolved photoluminescence measurements in high quality WSe$_2$ monolayers. Our experiments highlight an efficient relaxation from bright to dark excitons, due to a fast intra-valley electron transfer from the top to the bottom conduction band with opposite spins. A combination of experiments and theoretical analysis allows us to infer a spin relaxation time of about $τ_s\sim10~$ps, driven by the interplay between $Γ$-valley chiral phonons and spin-orbit mixing.
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Submitted 9 July, 2024;
originally announced July 2024.
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Brightened emission of dark trions in transition-metal dichalcogenide monolayers
Authors:
V. **dal,
K. Mourzidis,
A. Balocchi,
C. Robert,
P. Li,
D. Van Tuan,
L. Lombez,
D. Lagarde,
P. Renucci,
T. Taniguchi,
K. Watanabe,
H. Dery,
X. Marie
Abstract:
The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions.…
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The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions. Despite previous investigations, its origin remains elusive. Here, we demonstrate that this luminescence peak is the result of electron-electron assisted recombination that brightens the dark trion emission. Supporting evidence for this second-order recombination process comes from identifying the equivalent brightened emission of positively charged dark trions when the monolayer is electrostatically doped with holes. Remarkably, the discovered hole-hole assisted luminescence peak emerges in the near infrared, about 500 meV below the well-studied spectral region of excitons and trions. In addition to identifying new recombination channels of these excitonic complexes, our findings accurately determine the spin-split energies of the conduction and valence bands. Both of which play crucial roles in understanding the optical properties of WSe2 based homo- and hetero-structures.
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Submitted 4 June, 2024;
originally announced June 2024.
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Electron and hole do** of monolayer WSe2 induced by twisted ferroelectric hexagonal boron nitride
Authors:
Jules Fraunié,
Rayan Jamil,
Richard Kantelberg,
Sébastien Roux,
Lionel Petit,
Emmanuel Lepleux,
Louis Pacheco,
Kenji Watanabe,
Takashi Taniguchi,
Vincent Jacques,
Laurent Lombez,
Mikhail M. Glazov,
Benjamin Lassagne,
Xavier Marie,
Cedric Robert
Abstract:
For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride, one of the most used 2D materials, has opened the route to its integration into complex van der Waals heterostructures combining hybrid properties. Here we show t…
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For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride, one of the most used 2D materials, has opened the route to its integration into complex van der Waals heterostructures combining hybrid properties. Here we show that opposite polarizations in ferroelectric domains of a folded hBN layer can imprint local n and p do** in a semiconducting transition metal dichalcogenide WSe2 monolayer. We demonstrate that WSe2 can be used as an optical probe of ferroelectricity in hBN and show that the do** density and type can be controlled with the position of the semiconductor with respect to the ferroelectric interface. Our results establish the ferroelectric hBN/WSe2 van der Waals stacking as a promising optoelectronic structure.
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Submitted 6 December, 2023; v1 submitted 16 July, 2023;
originally announced July 2023.
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Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction
Authors:
Hassan Lamsaadi,
Dorian Beret,
Ioannis Paradisanos,
Pierre Renucci,
Delphine Lagarde,
Xavier Marie,
Bernhard Urbaszek,
Ziyang Gan,
Antony George,
Kenji Watanabe,
Takashi Taniguchi,
Andrey Turchanin,
Laurent Lombez,
Nicolas Combe,
Vincent Paillard,
Jean-Marie Poumirol
Abstract:
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challe…
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Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe$_{2}$-WSe$_{2}$) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.
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Submitted 23 June, 2023;
originally announced June 2023.
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Control of the Bright-Dark Exciton Splitting using Lamb Shift in a 2D Semiconductor
Authors:
L. Ren,
C. Robert,
M. M. Glazov,
M. A. Semina,
T. Amand,
L. Lombez,
D. Lagarde,
T. Taniguchi,
K. Watanabe,
X. Marie
Abstract:
We have investigated the exciton fine structure in atomically thin WSe2 -based van der Waals heterostructures where the density of optical modes at the location of the semiconductor monolayer can be tuned. The energy splitting $Δ$ between the bright and dark exciton has been measured by photoluminescence spectroscopy. We demonstrate that $Δ$ can be tuned by a few meV, as a result of a significant…
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We have investigated the exciton fine structure in atomically thin WSe2 -based van der Waals heterostructures where the density of optical modes at the location of the semiconductor monolayer can be tuned. The energy splitting $Δ$ between the bright and dark exciton has been measured by photoluminescence spectroscopy. We demonstrate that $Δ$ can be tuned by a few meV, as a result of a significant Lamb shift of the optically active exciton which arises from emission and absorption of virtual photons triggered by the vacuum fluctuations of the electromagnetic field. We also measured strong variations of the bright exciton radiative linewidth, as a result of the Purcell effect. All these experimental results illustrate the strong sensitivity of the excitons to local vacuum field. We found a very good agreement with a model that demonstrates the equivalence, for our system, of a classical electrodynamical transfer matrix formalism and quantum-electrodynamical approach. The bright-dark splitting control demonstrated here should apply to any semiconductor structures.
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Submitted 31 March, 2023;
originally announced March 2023.
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Interface engineering of charge-transfer excitons in 2D lateral heterostructures
Authors:
Roberto Rosati,
Ioannis Paradisanos,
Libai Huang,
Ziyang Gan,
Antony George,
Kenji Watanabe,
Takashi Taniguchi,
Laurent Lombez,
Pierre Renucci,
Andrey Turchanin,
Bernhard Urbaszek,
Ermin Malic
Abstract:
The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-enca…
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The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-encapsulated lateral MoSe$_2$-WSe$_2$ heterostructures. Based on a fully microscopic and material-specific theory, we reveal the many-particle processes behind the formation of CT excitons and how they can be tuned via interface- and dielectric engineering. For junction widths smaller than the Coulomb-induced Bohr radius we predict the appearance of a low-energy CT exciton. The theoretical prediction is compared with experimental low-temperature photoluminescence measurements showing emission in the bound CT excitons energy range. Our joint theory-experiment study presents a significant step towards a microscopic understanding of optical properties of technologically promising 2D lateral heterostructures.
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Submitted 6 February, 2023;
originally announced February 2023.
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Non-linear diffusion of negatively charged excitons in WSe2 monolayer
Authors:
D. Beret,
L. Ren,
C. Robert,
L. Foussat,
P. Renucci,
D. Lagarde,
A. Balocchi,
T. Amand,
B. Urbaszek,
K. Watanabe,
T. Taniguchi,
X. Marie,
L. Lombez
Abstract:
We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffusion process with an effective negative diffusion behavior. Specifically, we examine the dynamics of the two negatively charged bright excitons (interv…
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We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffusion process with an effective negative diffusion behavior. Specifically, we examine the dynamics of the two negatively charged bright excitons (intervalley and intravalley trion) as well as the dark trion. The time evolution allows us to identify the interplay of different excitonic species: the trionic species appear after the neutral excitonic ones, consistent with a bimolecular formation mechanism. Using the experimental observations, we propose a phenomenological model suggesting the coexistence of two populations: a first one exhibiting a fast and efficient diffusion mechanism and a second one with a slower dynamics and a less efficient diffusion process. These two contributions could be attributed to hot and cold trion populations.
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Submitted 1 August, 2022;
originally announced August 2022.
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Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
Authors:
Dorian Beret,
Ioannis Paradisanos,
Ziyang Gan,
Emad Naja dehaghani,
Antony George,
Tibor Lehnert,
Johannes Biskupek,
Shivangi Shree,
Ana Estrada-Real,
Delphine Lagarde,
Jean-Marie Poumirol,
Vincent Paillard,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Ute Kaiser,
Pierre Renucci,
Laurent Lombez,
Andrey Turchanin,
Bernhard Urbaszek
Abstract:
Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostruc…
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Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy at T = 4 K and also at 300 K to access the optical transitions in CVD grown MoSe2-WSe2 lateral heterostructures that are transferred from the growth-substrate and are encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal considerably narrowed optical transition linewidth similar to high quality exfoliated monolayers. In high-resolution transmission electron microscopy (HRTEM) we find near-atomically sharp junctions with a typical extent of 3nm for the covalently bonded MoSe2-WSe2. In PL imaging experiments we find effective excitonic diffusion length that are longer for WSe2 than for MoSe2 at low T=4 K, whereas at 300 K this trend is reversed.
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Submitted 15 April, 2022;
originally announced April 2022.
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Valley polarization fluctuations, bistability, and switching in two-dimensional semiconductors
Authors:
M. A. Semina,
M. M. Glazov,
C. Robert,
L. Lombez,
T. Amand,
X. Marie
Abstract:
We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton interactions. We address temporal dynamics of valley polarized excitons and study the steady states of the polarized exciton gas. We demonstrate bistability of t…
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We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton interactions. We address temporal dynamics of valley polarized excitons and study the steady states of the polarized exciton gas. We demonstrate bistability of the valley polarization where two steady states with low and high valley polarization are formed. We study the effects of fluctuations and noise in such system. We evaluate valley polarization autocorrelation functions and demonstrate that for a high-polarization regime the fluctuations are characterized by high amplitude and long relaxation time. We study the switching between the low- and high-valley polarized states caused by the noise in the system and demonstrate that the state with high valley polarization is preferential in a wide range of pum** rates.
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Submitted 28 June, 2022; v1 submitted 10 April, 2022;
originally announced April 2022.
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Optical detection of long electron spin transport lengths in a monolayer semiconductor
Authors:
Lei Ren,
Laurent Lombez,
Cedric Robert,
Dorian Beret,
Delphine Lagarde,
Bernhard Urbaszek,
Pierre Renucci,
Takashi Taniguchi,
Kenji Watanabe,
Scott A. Crooker,
Xavier Marie
Abstract:
Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pum** the Fermi sea of 2D electrons to a high degree of spin/valley polarization (up to 75%) using circularly-polarized light, the lateral diffusion of the electron polarization can be m…
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Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pum** the Fermi sea of 2D electrons to a high degree of spin/valley polarization (up to 75%) using circularly-polarized light, the lateral diffusion of the electron polarization can be mapped out via the photoluminescence induced by a spatially-separated and linearly-polarized probe laser. Up to 25% spin-valley polarization is observed at pump-probe separations up to 20 microns. Characteristic spin/valley diffusion lengths of 18 +/- 3 um are revealed at low temperatures. The dependence on temperature, pump helicity, pump intensity, and electron density highlight the key roles played by spin relaxation time and pum** efficiency on polarized electron transport in monolayer semiconductors possessing spin-valley locking.
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Submitted 2 February, 2022;
originally announced February 2022.
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Relaxation and darkening of excitonic complexes in electrostatically-doped monolayer semiconductors: Roles of exciton-electron and trion-electron interactions
Authors:
Min Yang,
Lei Ren,
Cedric Robert,
Dinh Van Tuan,
Laurent Lombez,
Bernhard Urbaszek,
Xavier Marie,
Hanan Dery
Abstract:
We present photoluminescence measurements in monolayer WSe$_2$, which point to the importance of the interaction between charged particles and excitonic complexes. The theoretical analysis highlights the key role played by exchange scattering, referring to cases wherein the particle composition of the complex changes after the interaction. For example, exchange scattering renders bright excitonic…
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We present photoluminescence measurements in monolayer WSe$_2$, which point to the importance of the interaction between charged particles and excitonic complexes. The theoretical analysis highlights the key role played by exchange scattering, referring to cases wherein the particle composition of the complex changes after the interaction. For example, exchange scattering renders bright excitonic complexes dark in monolayer WSe$_2$ on accounts of the unique valley-spin configuration in this material. In addition to the ultrafast energy relaxation of hot excitonic complexes following their interaction with electrons or holes, our analysis sheds light on several key features that are commonly seen in the photoluminescence of this monolayer semiconductor. In particular, we can understand why the photoluminescence intensity of the neutral bright exciton is strongest when the monolayer is hole-doped rather than charge neutral or electron-doped. Or the reason for the dramatic increase of the photoluminescence intensity of negatively-charged excitons (trions) as soon as electrons are added to the monolayer. To self-consistently explain the findings, we further study the photoluminescence spectra at different excitation energies and analyze the behavior of the elusive indirect exciton.
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Submitted 2 October, 2021;
originally announced October 2021.
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Impact of excitation energy on hot carrier properties in InGaAs MQW structure
Authors:
Hamidreza Esmaielpour,
Laurent Lombez,
Maxime Giteau,
Jean-Francois Guillemoles,
Daniel Suchet
Abstract:
Hot carrier solar cells aim to overcome the theoretical limit of single-junction photovoltaic devices by suppressing the thermalization of hot carriers and extracting them through energy selective contacts. Designing efficient hot carrier absorbers requires further investigation on hot carrier properties in materials. Although the thermalization of hot carriers is responsible for a large portion o…
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Hot carrier solar cells aim to overcome the theoretical limit of single-junction photovoltaic devices by suppressing the thermalization of hot carriers and extracting them through energy selective contacts. Designing efficient hot carrier absorbers requires further investigation on hot carrier properties in materials. Although the thermalization of hot carriers is responsible for a large portion of energy loss in solar cells, it is still one of the least understood phenomena in semiconductors. Here, the impact of excitation energy on the properties of photo-generated hot carriers in an InGaAs multi-quantum well (MQW) structure at various lattice temperatures and excitation powers is studied. Photoluminescence (PL) emission of the sample is detected by a hyperspectral luminescence imager, which creates spectrally and spatially resolved PL maps. The thermodynamic properties of hot carriers, such as temperature and quasi-Fermi level splitting, are carefully determined via applying full PL spectrum fitting, which solves the Fermi-Dirac integral and considers the band-filling effect in the nanostructured material. In addition, the impact of thermalized power density and carrier scattering with longitudinal optical phonons on the spectral linewidth broadening under two excitation energies is studied.
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Submitted 4 July, 2021;
originally announced July 2021.
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Imaging Seebeck drift of excitons and trions in MoSe2 monolayers
Authors:
Sangjun Park,
Bo Han,
Caroline Boule,
Daniel Paget,
Alistair Rowe,
Fausto Sirotti,
Takashi Taniguchi,
Kenji Watanabe,
Cedric Robert,
Laurent Lombez,
Bernhard Urbaszek,
Xavier Marie,
Fabian Cadiz
Abstract:
Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe$_2$ monolayers encapsulated with hexagonal boron nitride (hBN). Under a tightly focused, continuous-wave laser excitation, the spatial distribution of neutral excitons and charged trions strongly differ at high excitation densities. Remarkably, in this regime the trion distribution develops…
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Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe$_2$ monolayers encapsulated with hexagonal boron nitride (hBN). Under a tightly focused, continuous-wave laser excitation, the spatial distribution of neutral excitons and charged trions strongly differ at high excitation densities. Remarkably, in this regime the trion distribution develops a halo shape, similar to that previously observed in WS2 monolayers at room temperature and under pulsed excitation. In contrast, the exciton distribution only presents a moderate broadening without the appereance of a halo. Spatially and spectrally resolved luminescence spectra reveal the buildup of a significant temperature gradient at high excitation power, that is attributed to the energy relaxation of photoinduced hot carriers. We show, via a numerical resolution of the transport equations for excitons and trions, that the halo can be interpreted as thermal drift of trions due to a Seebeck term in the particle current. The model shows that the difference between trion and exciton profiles is simply understood in terms of the very different lifetimes of these two quasiparticles.
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Submitted 20 May, 2021;
originally announced May 2021.
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Spin/Valley pum** of resident electrons in WSe2 and WS2 monolayers
Authors:
Cedric Robert,
Sangjun Park,
Fabian Cadiz,
Laurent Lombez,
Lei Ren,
Hans Tornatzky,
Alistair Rowe,
Daniel Paget,
Fausto Sirotti,
Min Yang,
Dinh Van Tuan,
Takashi Taniguchi,
Bernhard Urbaszek,
Kenji Watanabe,
Thierry Amand,
Hanan Dery,
Xavier Marie
Abstract:
Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pum** of resident electrons in n-doped WSe2 and WS2 monola…
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Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pum** of resident electrons in n-doped WSe2 and WS2 monolayers. We observe that, using a continuous wave laser and appropriate do** and excitation densities, negative trion doublet lines exhibit circular polarization of opposite sign and the photoluminescence intensity of the triplet trion is more than four times larger with circular excitation than with linear excitation. We interpret our results as a consequence of a large dynamic polarization of resident electrons using circular light.
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Submitted 11 May, 2021;
originally announced May 2021.
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Interlayer exciton mediated second harmonic generation in bilayer MoS2
Authors:
Shivangi Shree,
Delphine Lagarde,
Laurent Lombez,
Cedric Robert,
Andrea Balocchi,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Iann C. Gerber,
Mikhail M. Glazov,
Leonid E. Golub,
Bernhard Urbaszek,
Ioannis Paradisanos
Abstract:
Second harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of…
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Second harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of bilayer MoS2, that shows strong optical oscillator strength for the intra- but also inter-layer exciton resonances. As we tune the SHG signal onto these resonances by varying the laser energy, the SHG amplitude is enhanced by several orders of magnitude. In the resonant case the bilayer SHG signal reaches amplitudes comparable to the off-resonant signal from a monolayer. In applied electric fields the interlayer exciton energies can be tuned due to their in-built electric dipole via the Stark effect. As a result the interlayer exciton degeneracy is lifted and the bilayer SHG response is further enhanced by an additional two orders of magnitude, well reproduced by our model calculations.
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Submitted 2 April, 2021;
originally announced April 2021.
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Slow diffusion and long lifetime in metal halide perovskites for photovoltaics
Authors:
Adrien Bercegol,
F. Javier Ramos,
Amelle Rebai,
Thomas Guillemot,
Daniel Ory,
Jean Rousset,
Laurent Lombez
Abstract:
Metal halide perovskites feature excellent absorption, emission and charge carrier transport properties. These materials are therefore very well suited for photovoltaics applications where there is a growing interest. Still, questions arise when looking at the unusual long carrier lifetime that, regarding the micrometric diffusion length, would imply a very low diffusion coefficient as compared to…
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Metal halide perovskites feature excellent absorption, emission and charge carrier transport properties. These materials are therefore very well suited for photovoltaics applications where there is a growing interest. Still, questions arise when looking at the unusual long carrier lifetime that, regarding the micrometric diffusion length, would imply a very low diffusion coefficient as compared to commonly used photovoltaic absorbers. In this paper, we provide an experimental insight into this long lifetime of charge carriers in slow-motion. Our approach relies on an improved model to analyze time-resolved photoluminescence decays at multiple fluence levels that includes charge carrier transport, photon recycling, and traps dynamics. The model is verified on different interface properties. Moreover, we investigate various perovskite absorbers such as mixed alloys with cesium content. For most of the perovskite based materials we analyzed, the band-to-band recombination rate remains close to the radiative limit, leading to the expected sub-microsecond lifetime. The slow diffusion of charge carriers is observed with values of the diffusion coefficient D around 5x10-3 cm2/s. Nonetheless, the power conversion efficiency remains high. The observations might be related to the debated coexistence of a direct and indirect bandgap slowing down the recombination process.
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Submitted 10 July, 2018; v1 submitted 11 June, 2018;
originally announced June 2018.
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Wide range electrical tunability of single photon emission from chromium-based colour centres in diamond
Authors:
T. Müller,
I. Aharonovich,
L. Lombez,
Y. Alaverdyan,
A. N. Vamivakas,
S. Castelletto,
F. Jelezko,
J. Wrachtrup,
S. Prawer,
M. Atatüre
Abstract:
We demonstrate electrical control of the single photon emission spectrum from chromium-based colour centres implanted in monolithic diamond. Under an external electric field the tunability range is typically three orders of magnitude larger than the radiative linewidth and at least one order of magnitude larger than the observed linewidth. The electric and magnetic field dependence of luminescence…
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We demonstrate electrical control of the single photon emission spectrum from chromium-based colour centres implanted in monolithic diamond. Under an external electric field the tunability range is typically three orders of magnitude larger than the radiative linewidth and at least one order of magnitude larger than the observed linewidth. The electric and magnetic field dependence of luminescence gives indications on the inherent symmetry and we propose Cr-X or X-Cr-Y type noncentrosymmetric atomic configurations as most probable candidates for these centres.
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Submitted 25 January, 2011;
originally announced January 2011.
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Hot Carrier Solar Cells : In the Making ?
Authors:
A. Le Bris,
L. Lombez,
Jean Francois Guillemoles,
R. Esteban,
M. Laroche,
Jj. Greffet,
G. Boissier,
P. Christol,
S. Collin,
Jl. Pelouard,
P. Aschehoug,
F. Pellé
Abstract:
Hot carrier solar cells allow potential efficiency close to the thermodynamical limit in ideal conditions. However, the feasability of such devices has not been clearly stated so far and only ideal cells were considered in previous studies. Here we develop a model with realistic energy selective contacts, carrier thermalization and absorptivity. The requirements in term of contact selectivity is i…
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Hot carrier solar cells allow potential efficiency close to the thermodynamical limit in ideal conditions. However, the feasability of such devices has not been clearly stated so far and only ideal cells were considered in previous studies. Here we develop a model with realistic energy selective contacts, carrier thermalization and absorptivity. The requirements in term of contact selectivity is investigated, showing that semi-selective contacts are not incompatible with high efficiencies. Candidates for absorbing material were synthesized and the required thermalization properties are obtained. Specific structures were designed to enhance absorption of concentrated sunlight in a small material thickness, allowing high carrier density in the absorber.
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Submitted 9 December, 2010;
originally announced December 2010.
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Measuring sheet resistance of CIGS solar cell's window layer by spatially resolved electroluminescence imaging
Authors:
Myriam Paire,
Laurent Lombez,
Jean Francois Guillemoles,
Daniel Lincot
Abstract:
A spatially resolved electroluminescence (EL) imaging experiment is developed to measure the local sheet resistance of the window layer, directly on the completed CIGS cell. Our method can be applied to the EL imaging studies that are made in fundamental studies as well as in in-line process inspection (1-3). The EL experiment consists in using solar cell as a light emitting device : a voltage is…
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A spatially resolved electroluminescence (EL) imaging experiment is developed to measure the local sheet resistance of the window layer, directly on the completed CIGS cell. Our method can be applied to the EL imaging studies that are made in fundamental studies as well as in in-line process inspection (1-3). The EL experiment consists in using solar cell as a light emitting device : a voltage is applied to the cell and its luminescence is detected. We develop an analytical and quantitative model to simulate the behavior of CIGS solar cells based on the spread sheet resistance effect in the window layer. We determine the repartition of the electric potential on the ZnO, for given cell's characteristics such as sheet resistance and contact geometries. Knowing the repartition of the potential, the EL intensity is estimated and the experimental EL signal is fitted, which allows the determination of the window layer sheet resistance.
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Submitted 8 December, 2010;
originally announced December 2010.
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Low temperature optical characterization of near infrared single photon emitters in nanodiamonds
Authors:
P. Siyushev,
V. Jacques,
I. Aharonovich,
F. Kaiser,
T. Muller,
L. Lombez,
M. Atature,
S. Castelletto,
S. Prawer,
F. Jelezko,
J. Wrachtrup
Abstract:
In this paper, we study the optical properties of single defects emitting in the near infrared in nanodiamonds at liquid helium temperature. The nanodiamonds are synthesized using a microwave chemical vapor deposition method followed by nickel implantation and annealing. We show that single defects exhibit several striking features at cryogenic temperature: the photoluminescence is strongly conc…
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In this paper, we study the optical properties of single defects emitting in the near infrared in nanodiamonds at liquid helium temperature. The nanodiamonds are synthesized using a microwave chemical vapor deposition method followed by nickel implantation and annealing. We show that single defects exhibit several striking features at cryogenic temperature: the photoluminescence is strongly concentrated into a sharp zero-phonon line in the near infrared, the radiative lifetime is in the nanosecond range and the emission is perfectly linearly polarized. The spectral stability of the defects is then investigated. An optical resonance linewidth of 4 GHz is measured using resonant excitation on the zero-phonon line. Although Fourier-transform limited emission is not achieved, our results show that it might be possible to use consecutive photons emitted in the near infrared by single defects in diamond nanocrystals to perform two photon interference experiments, which are at the heart of linear quantum computing protocols.
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Submitted 18 November, 2009; v1 submitted 16 September, 2009;
originally announced September 2009.
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Electron spin quantum beats in positively charged quantum dots: nuclear field effects
Authors:
L. Lombez,
P. -F. Braun,
X. Marie,
P. Renucci,
B. Urbaszek,
T. Amand,
O. Krebs,
P. Voisin
Abstract:
We have studied the electron spin coherence in an ensemble of positively charged InAs/GaAs quantum dots. In a transverse magnetic field, we show that two main contributions must be taken into account to explain the dam** of the circular polarization oscillations. The first one is due to the nuclear field fluctuations from dot to dot experienced by the electron spin. The second one is due to th…
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We have studied the electron spin coherence in an ensemble of positively charged InAs/GaAs quantum dots. In a transverse magnetic field, we show that two main contributions must be taken into account to explain the dam** of the circular polarization oscillations. The first one is due to the nuclear field fluctuations from dot to dot experienced by the electron spin. The second one is due to the dispersion of the transverse electron Lande g-factor, due to the inherent inhomogeneity of the system, and leads to a field dependent contribution to the dam**. We have developed a model taking into account both contributions, which is in good agreement with the experimental data. This enables us to extract the pure contribution to dephasing due to the nuclei.
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Submitted 12 April, 2007; v1 submitted 12 January, 2007;
originally announced January 2007.
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Spin-dependent electron dynamics and recombination in GaAs(1-x)N(x) alloys at room temperature
Authors:
V. K. Kalevich,
A. Yu. Shiryaev,
E. L. Ivchenko,
A. Yu. Egorov,
L. Lombez,
D. Lagarde,
X. Marie,
T. Amand
Abstract:
We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pum** at room temperature in GaAs(1-x)N(x) alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is found that the photoluminescence circular polarization determined by the mean spin of free electrons reaches 40-45% and this giant value persists within 2 ns.…
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We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pum** at room temperature in GaAs(1-x)N(x) alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is found that the photoluminescence circular polarization determined by the mean spin of free electrons reaches 40-45% and this giant value persists within 2 ns. Simultaneously, the total free-electron spin decays rapidly with the characteristic time ~150 ps. The results are explained by spin-dependent capture of free conduction electrons on deep paramagnetic centers resulting in dynamical polarization of bound electrons. We have developed a nonlinear theory of spin dynamics in the coupled system of spin-polarized free and localized carriers which describes the experimental dependencies, in particular, electron spin quantum beats observed in a transverse magnetic field.
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Submitted 27 December, 2006;
originally announced December 2006.
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Electrical spin injection into p-doped quantum dots through a tunnel barrier
Authors:
L. Lombez,
P. Renucci,
P. Gallo,
P. F. Braun,
H. Carrere,
P. H. Binh,
X. Marie,
T. Amand,
B. Urbaszek,
J. L. Gauffier,
T. Camps,
A. Arnoult,
C. Fontaine,
C. Deranlot,
R. Mattana,
H. Jaffres,
J. M. George
Abstract:
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization resolved photoluminescence). The measured electroluminesc…
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We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at low temperature in a 2T magnetic field, leading to an estimation of the electrical spin injection yield of 35%. Moreover, this electroluminescence circular polarization is stable up to 70 K.
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Submitted 8 January, 2007; v1 submitted 16 October, 2006;
originally announced October 2006.
