Showing 1–2 of 2 results for author: Loippo, T

Strain effects in phosphorous bound exciton transitions in silicon

Authors: Teemu Loippo, Antti Kanniainen, Juha T. Muhonen

Abstract: Donor spin states in silicon are a promising candidate for quantum information processing. One possible donor spin readout mechanism is the bound exciton transition that can be excited optically and creates an electrical signal when it decays. This transition has been extensively studied in bulk, but in order to scale towards localized spin readout, microfabricated structures are needed for detect… ▽ More Donor spin states in silicon are a promising candidate for quantum information processing. One possible donor spin readout mechanism is the bound exciton transition that can be excited optically and creates an electrical signal when it decays. This transition has been extensively studied in bulk, but in order to scale towards localized spin readout, microfabricated structures are needed for detection. As these electrodes will inevitably cause strain in the silicon lattice, it will be crucial to understand how strain affects the exciton transitions. Here we study the phosphorous donor bound exciton transitions in silicon using hybrid electro-optical readout with microfabricated electrodes. We observe a significant zero-field splitting as well mixing of the hole states due to strain. We can model these effects assuming the known asymmetry of the hole g-factors and the Pikus-Bir Hamiltonian describing the strain. In addition, we describe the temperature, laser power and light polarization dependence of the transitions. Importantly, the hole-mixing should not prevent donor electron spin readout and using our measured parameters and numerical simulations we anticipate that hybrid spin readout in a silicon-on-insulator platform should be possible, allowing integration to silicon photonics platforms. △ Less

Submitted 10 January, 2023; v1 submitted 7 July, 2022; originally announced July 2022.

Comments: 7 pages, 8 figures and a supplementary

Journal ref: Phys. Rev. Materials 7, 016202 (2023)

The effects of ion implantation damage to photonic crystal optomechanical resonators in silicon

Authors: Cliona Shakespeare, Teemu Loippo, Henri Lyyra, Juha T. Muhonen

Abstract: Optomechanical resonators were fabricated on a silicon-on-insulator (SOI) substrate that had been implanted with phosphorus donors. The resonators' mechanical and optical properties were then measured (at 6 kelvin and room temperature) before and after the substrate was annealed. All measured resonators survived the annealing and their mechanical linewidths decreased while their optical and mechan… ▽ More Optomechanical resonators were fabricated on a silicon-on-insulator (SOI) substrate that had been implanted with phosphorus donors. The resonators' mechanical and optical properties were then measured (at 6 kelvin and room temperature) before and after the substrate was annealed. All measured resonators survived the annealing and their mechanical linewidths decreased while their optical and mechanical frequencies increased. This is consistent with crystal lattice damage from the ion implantation causing the optical and mechanical properties to degrade and then subsequently being repaired by the annealing. We explain these effects qualitatively with changes in the silicon crystal lattice structure. We also report on some unexplained features in the pre-anneal samples. In addition, we report partial fabrication of optomechanical resonators with neon ion milling. △ Less

Submitted 28 September, 2021; originally announced September 2021.