Ubiquitous Superconducting Diode Effect in Superconductor Thin Films
Authors:
Yasen Hou,
Fabrizio Nichele,
Hang Chi,
Alessandro Lodesani,
Yingying Wu,
Markus F. Ritter,
Daniel Z. Haxell,
Margarita Davydova,
Stefan Ilić,
Ourania Glezakou-Elbert,
Amith Varambally,
F. Sebastian Bergeret,
Akashdeep Kamra,
Liang Fu,
Patrick A. Lee,
Jagadeesh S. Moodera
Abstract:
The macroscopic coherence in superconductors supports dissipationless supercurrents which could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called superconducting (SC) diode effect. We demonstrate strong SC diode effect in…
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The macroscopic coherence in superconductors supports dissipationless supercurrents which could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called superconducting (SC) diode effect. We demonstrate strong SC diode effect in conventional SC thin films, such as niobium and vanadium, employing external magnetic fields as small as 1 Oe. Interfacing the SC layer with a ferromagnetic semiconductor EuS, we further accomplish non-volatile SC diode effect reaching a giant efficiency of 65%. By careful control experiments and theoretical modeling, we demonstrate that the critical supercurrent nonreciprocity in SC thin films could be easily accomplished with asymmetrical vortex edge/surface barriers and the universal Meissner screening current governing the critical currents. Our engineering of the SC diode effect in simple systems opens door for novel technologies. Meanwhile, we reveal the ubiquity of Meissner screening effect induced SC diode effect in superconducting films, which should be eliminated with great care in the search of exotic superconducting states harboring finite-momentum Cooper pairing.
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Submitted 3 February, 2023; v1 submitted 18 May, 2022;
originally announced May 2022.
A van der Waals Interface Hosting Two Groups of Magnetic Skyrmions
Authors:
Yingying Wu,
Brian Francisco,
Wei Wang,
Yu Zhang,
Caihua Wan,
Xiufen Han,
Hang Chi,
Yasen Hou,
Alessandro Lodesani,
Yong-tao Cui,
Kang L. Wang,
Jagadeesh S. Moodera
Abstract:
Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion based ultrahigh-density spin memory devices. Extending the field to two-dimensional van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g. thickness, twisting angle and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality.…
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Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion based ultrahigh-density spin memory devices. Extending the field to two-dimensional van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g. thickness, twisting angle and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality. We report a van der Waals interface, formed by two 2D ferromagnets Cr2Ge2Te6 and Fe3GeTe2 with a Curie temperature of ~65 K and ~205 K, respectively, hosting two groups of magnetic skyrmions. Two sets of topological Hall effect are observed below 60 K when Cr2Ge2Te6 is magnetically ordered. These two groups of skyrmions are directly imaged using magnetic force microscopy. Interestingly, the magnetic skyrmions persist in the heterostructure in the remanent state with zero applied magnetic field. Our results are promising for the realization of skyrmionic devices based on van der Waals heterostructures hosting multiple skyrmion phases.
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Submitted 15 February, 2022; v1 submitted 15 December, 2021;
originally announced December 2021.
