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Potential for Improved Time Resolution Using Very Thin Ultra-Fast Silicon Detectors (UFSDs)
Authors:
A. Seiden,
H. Ren,
Y. **,
S. Christie,
Z. Galloway,
C. Gee,
C. Labitan,
M. Lockerby,
F. Martinez-McKinney,
S. M. Mazza,
R. Padilla,
H. F. -W. Sadrozinski,
B. Schumm,
M. Wilder,
W. Wyatt,
Y. Zhao,
N. Cartiglia
Abstract:
Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain allows excellent time measurement for im**ing minimum ionizing charged particles. An important design consideration is the sensor thickness, which has a stron…
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Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain allows excellent time measurement for im**ing minimum ionizing charged particles. An important design consideration is the sensor thickness, which has a strong impact on the achievable time resolution. We present the result of measurements for LGADs of thickness between 20 micro-m and 50 micro-m. The data are fit to a formula that captures the impact of both electronic jitter and Landau fluctuations on the time resolution. The data illustrate the importance of having a saturated electron drift velocity and a large signal-to-noise in order to achieve good time resolution. Sensors of 20 micro-m thickness offer the potential of 10 to 15 ps time resolution per measurement, a significant improvement over the value for the 50 micro-m sensors that have been typically used to date.
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Submitted 24 February, 2021; v1 submitted 7 June, 2020;
originally announced June 2020.
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Radiation Campaign of HPK Prototype LGAD sensors for the High-Granularity Timing Detector (HGTD)
Authors:
X. Shi,
M. K. Ayoub,
J. Barreiro Guimarães da Costa,
H. Cui,
R. Kiuchi,
Y. Fan,
S. Han,
Y. Huang,
M. **g,
Z. Liang,
B. Liu,
J. Liu,
F. Lyu,
B. Qi,
K. Ran,
L. Shan,
L. Shi,
Y. Tan,
K. Wu,
S. Xiao,
T. Yang,
Y. Yang,
C. Yu,
M. Zhao,
X. Zhuang
, et al. (52 additional authors not shown)
Abstract:
We report on the results of a radiation campaign with neutrons and protons of Low Gain Avalanche Detectors (LGAD) produced by Hamamatsu (HPK) as prototypes for the High-Granularity Timing Detector (HGTD) in ATLAS. Sensors with an active thickness of 50~$μ$m were irradiated in steps of roughly 2$\times$ up to a fluence of $3\times10^{15}~\mathrm{n_{eq}cm^{-2}}$. As a function of the fluence, the co…
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We report on the results of a radiation campaign with neutrons and protons of Low Gain Avalanche Detectors (LGAD) produced by Hamamatsu (HPK) as prototypes for the High-Granularity Timing Detector (HGTD) in ATLAS. Sensors with an active thickness of 50~$μ$m were irradiated in steps of roughly 2$\times$ up to a fluence of $3\times10^{15}~\mathrm{n_{eq}cm^{-2}}$. As a function of the fluence, the collected charge and time resolution of the irradiated sensors will be reported for operation at $-30^{\circ}$.
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Submitted 28 April, 2020;
originally announced April 2020.
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Effect of deep gain layer and Carbon infusion on LGAD radiation hardness
Authors:
R Padilla,
C. Labitan,
Z. Galloway,
C. Gee,
S. M. Mazza,
F. McKinney-Martinez,
H. F. -W. Sadrozinski,
A. Seiden,
B. Schumm,
M. Wilder,
Y. Zhao,
H. Ren,
Y. **,
M. Lockerby,
V. Cindro,
G. Kramberger,
I. Mandiz,
M. Mikuz,
M. Zavrtanik,
R. Arcidiacono,
N. Cartiglia,
M. Ferrero,
M. Mandurrino,
V. Sola,
A. Staiano
Abstract:
The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Car…
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The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Carbon infusion to the gain layer of the sensors was tested by FBK in the UFSD3 production. HPK instead produced LGADs with a very thin, highly doped and deep multiplication layer. The sensors were exposed to a neutron fluence from 4e14 neq/cm2 to 4e15 neq/cm2. The collected charge and the timing resolution were measured as a function of bias voltage at -30C, furthermore the profile of the capacitance over voltage of the sensors was measured.
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Submitted 27 July, 2020; v1 submitted 10 April, 2020;
originally announced April 2020.
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Layout and Performance of HPK Prototype LGAD Sensors for the High-Granularity Timing Detector
Authors:
X. Yang,
S. Alderweireldt,
N. Atanov,
M. K. Ayoub,
J. Barreiro Guimaraes da Costa,
L. Castillo Garcia,
H. Chen,
S. Christie,
V. Cindro,
H. Cui,
G. D'Amen,
Y. Davydov,
Y. Y. Fan,
Z. Galloway,
J. J. Ge,
C. Gee,
G. Giacomini,
E. L. Gkougkousis,
C. Grieco,
S. Grinstein,
J. Grosse-Knetter,
S. Guindon,
S. Han,
A. Howard,
Y. P. Huang
, et al. (54 additional authors not shown)
Abstract:
The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology will cover the pseudo-rapidity region of $2.4<|η|<4.0$ with two end caps on each side and a total area of 6.4 $m^2$. The timing performance can be improved by implanting an internal gain layer that can produce signal with a fast rising…
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The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology will cover the pseudo-rapidity region of $2.4<|η|<4.0$ with two end caps on each side and a total area of 6.4 $m^2$. The timing performance can be improved by implanting an internal gain layer that can produce signal with a fast rising edge, which improve significantly the signal-to-noise ratio. The required average timing resolution per track for a minimum-ionising particle is 30 ps at the start and 50 ps at the end of the HL-LHC operation. This is achieved with several layers of LGAD. The innermost region of the detector would accumulate a 1 MeV-neutron equivalent fluence up to $2.5 \times 10^{15} cm^{-2}$ before being replaced during the scheduled shutdowns. The addition of this new detector is expected to play an important role in the mitigation of high pile-up at the HL-LHC. The layout and performance of the various versions of LGAD prototypes produced by Hamamatsu (HPK) have been studied by the ATLAS Collaboration. The breakdown voltages, depletion voltages, inter-pad gaps, collected charge as well as the time resolution have been measured and the production yield of large size sensors has been evaluated.
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Submitted 31 March, 2020;
originally announced March 2020.
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Experimental Study of Acceptor Removal in UFSD
Authors:
Y. **,
H. Ren,
S. Christie,
Z. Galloway,
C. Gee,
C. Labitan,
M. Lockerby,
F. Martinez-McKinney,
S. M. Mazza,
R. Padilla,
H. F. -W. Sadrozinski,
B. Schumm,
A. Seiden,
M. Wilder,
W. Wyatt,
Y. Zhao,
R. Arcidiacono,
N. Cartiglia,
M. Ferrero,
M. Mandurrino,
F. Siviero,
V. Sola,
M. Tornago,
V. Cindro,
A. Howard
, et al. (3 additional authors not shown)
Abstract:
The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with C-V measurements of the do** concentration and with measurements of charge collection using charged particles. We find a perfect linear correlation between t…
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The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with C-V measurements of the do** concentration and with measurements of charge collection using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C-V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.
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Submitted 16 September, 2020; v1 submitted 16 March, 2020;
originally announced March 2020.
