Showing 1–18 of 18 results for author: Lo, C C

Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity

Authors: Philipp Ross, Brendon C. Rose, Cheuk C. Lo, Mike L. W. Thewalt, Alexei M. Tyryshkin, Stephen A. Lyon, John J. L. Morton

Abstract: Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although such times are exceptionally long for electron spins in the solid state, they are nevertheless limited by donor electron spin-spin interactions. Suppressing such… ▽ More Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although such times are exceptionally long for electron spins in the solid state, they are nevertheless limited by donor electron spin-spin interactions. Suppressing such interactions requires even lower donor concentrations, which lie below the detection limit for typical electron spin resonance (ESR) spectrometers. Here we describe an alternative method for phosphorus donor ESR detection, exploiting the spin-to-charge conversion provided by the optical donor bound exciton transition. We characterise the method and its dependence on laser power and use it to measure a coherence time of $T_2 = 130 $ms for one of the purest silicon samples grown to-date ([P]$ = 5\times 10^{11} $cm$^{-3}$). We then benchmark this result using an alternative application of the donor bound exciton transition: optically polarising the donor spins before using conventional ESR detection at 1.7~K for a sample with [P]$ = 4\times10^{12} $cm$^{-3}$, and measuring in this case a $T_2$ of 350 ms. △ Less

Submitted 28 December, 2020; v1 submitted 4 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. Applied 11, 054014 (2019)

Spin-orbit entangled j=1/2 moments in Ba$_2$CeIrO$_6$ -- a frustrated fcc quantum magnet

Authors: A. Revelli, C. C. Loo, D. Kiese, P. Becker, T. Fröhlich, T. Lorenz, M. Moretti Sala, G. Monaco, F. L. Buessen, J. Attig, M. Hermanns, S. V. Streltsov, D. I. Khomskii, J. van den Brink, M. Braden, P. H. M. van Loosdrecht, S. Trebst, A. Paramekanti, M. Grüninger

Abstract: We establish the double perovskite Ba$_2$CeIrO$_6$ as a nearly ideal model system for j=1/2 moments, with resonant inelastic x-ray scattering indicating a deviation of less than 1% from the ideally cubic j=1/2 state. The local j=1/2 moments form an fcc lattice and are found to order antiferromagnetically at $T_N$=14K, more than an order of magnitude below the Curie-Weiss temperature. Model calcula… ▽ More We establish the double perovskite Ba$_2$CeIrO$_6$ as a nearly ideal model system for j=1/2 moments, with resonant inelastic x-ray scattering indicating a deviation of less than 1% from the ideally cubic j=1/2 state. The local j=1/2 moments form an fcc lattice and are found to order antiferromagnetically at $T_N$=14K, more than an order of magnitude below the Curie-Weiss temperature. Model calculations show that the geometric frustration of the fcc Heisenberg antiferromagnet is further enhanced by a next-nearest neighbor exchange, indicated by ab initio theory. Magnetic order is driven by a bond-directional Kitaev exchange and by local distortions via a strong magneto-elastic effect - both effects are typically not expected for j=1/2 compounds making Ba2CeIrO6 a riveting example for the rich physics of spin-orbit entangled Mott insulators. △ Less

Submitted 2 September, 2019; v1 submitted 18 January, 2019; originally announced January 2019.

Comments: published version, 10 pages, 7 figures

Journal ref: Phys. Rev. B 100, 085139 (2019)

Controlling spin relaxation with a cavity

Authors: A. Bienfait, J. J. Pla, Y. Kubo, X. Zhou, M. Stern, C. C. Lo, C. D. Weis, T. Schenkel, D. Vion, D. Esteve, J. J. L. Morton, P. Bertet

Abstract: Spontaneous emission of radiation is one of the fundamental mechanisms by which an excited quantum system returns to equilibrium. For spins, however, spontaneous emission is generally negligible compared to other non-radiative relaxation processes because of the weak coupling between the magnetic dipole and the electromagnetic field. In 1946, Purcell realized that the spontaneous emission rate can… ▽ More Spontaneous emission of radiation is one of the fundamental mechanisms by which an excited quantum system returns to equilibrium. For spins, however, spontaneous emission is generally negligible compared to other non-radiative relaxation processes because of the weak coupling between the magnetic dipole and the electromagnetic field. In 1946, Purcell realized that the spontaneous emission rate can be strongly enhanced by placing the quantum system in a resonant cavity -an effect which has since been used extensively to control the lifetime of atoms and semiconducting heterostructures coupled to microwave or optical cavities, underpinning single-photon sources. Here we report the first application of these ideas to spins in solids. By coupling donor spins in silicon to a superconducting microwave cavity of high quality factor and small mode volume, we reach for the first time the regime where spontaneous emission constitutes the dominant spin relaxation mechanism. The relaxation rate is increased by three orders of magnitude when the spins are tuned to the cavity resonance, showing that energy relaxation can be engineered and controlled on-demand. Our results provide a novel and general way to initialise spin systems into their ground state, with applications in magnetic resonance and quantum information processing. They also demonstrate that, contrary to popular belief, the coupling between the magnetic dipole of a spin and the electromagnetic field can be enhanced up to the point where quantum fluctuations have a dramatic effect on the spin dynamics; as such our work represents an important step towards the coherent magnetic coupling of individual spins to microwave photons. △ Less

Submitted 27 August, 2015; v1 submitted 25 August, 2015; originally announced August 2015.

Comments: 8 pages, 6 figures, 1 table

Reaching the quantum limit of sensitivity in electron spin resonance

Authors: A. Bienfait, J. J. Pla, Y. Kubo, M. Stern, X. Zhou, C. C. Lo, C. D. Weis, T. Schenkel, M. L. W. Thewalt, D. Vion, D. Esteve, B. Julsgaard, K. Moelmer, J. J. L. Morton, P. Bertet

Abstract: We report pulsed electron-spin resonance (ESR) measurements on an ensemble of Bismuth donors in Silicon cooled at 10mK in a dilution refrigerator. Using a Josephson parametric microwave amplifier combined with high-quality factor superconducting micro-resonators cooled at millikelvin temperatures, we improve the state-of-the-art sensitivity of inductive ESR detection by nearly 4 orders of magnitud… ▽ More We report pulsed electron-spin resonance (ESR) measurements on an ensemble of Bismuth donors in Silicon cooled at 10mK in a dilution refrigerator. Using a Josephson parametric microwave amplifier combined with high-quality factor superconducting micro-resonators cooled at millikelvin temperatures, we improve the state-of-the-art sensitivity of inductive ESR detection by nearly 4 orders of magnitude. We demonstrate the detection of 1700 bismuth donor spins in silicon within a single Hahn echo with unit signal-to-noise (SNR) ratio, reduced to just 150 spins by averaging a single Carr-Purcell-Meiboom-Gill sequence. This unprecedented sensitivity reaches the limit set by quantum fluctuations of the electromagnetic field instead of thermal or technical noise, which constitutes a novel regime for magnetic resonance. △ Less

Submitted 24 July, 2015; originally announced July 2015.

Comments: Main text : 10 pages, 4 figures. Supplementary text : 16 pages, 8 figures

Charge dynamics and spin blockade in a hybrid double quantum dot in silicon

Authors: M. Urdampilleta, A. Chatterjee, C. C. Lo, T. Kobayashi, J. Mansir, S. Barraud, A. C. Betz, S. Rogge, M. F. Gonzalez-Zalba, J. J. L. Morton

Abstract: Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfin… ▽ More Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability and scalability. Here we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterise the charge dynamics, which reveals a charge T2* of 200 ps and a relaxation time T1 of 100 ns. Additionally, we demonstrate spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus. △ Less

Submitted 19 March, 2015; v1 submitted 3 March, 2015; originally announced March 2015.

Comments: 6 pages, 4 figures, supplementary information (3 pages, 4 figures)

Journal ref: Phys. Rev. X 5, 031024 (2015)

Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon

Authors: C. C. Lo, M. Urdampilleta, P. Ross, M. F. Gonzalez-Zalba, J. Mansir, S. A. Lyon, M. L. W. Thewalt, J. J. L. Morton

Abstract: Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing. For electron spins bound to shallow donors in silicon, bulk electrically-detected magnetic resonance has relied on coupling to spin readout partners such as pa… ▽ More Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing. For electron spins bound to shallow donors in silicon, bulk electrically-detected magnetic resonance has relied on coupling to spin readout partners such as paramagnetic defects or conduction electrons which fundamentally limits spin coherence times. Here we demonstrate electrical detection of phosphorus donor electron spin resonance by transport through a silicon device, using optically-driven donor-bound exciton transitions. We use this method to measure electron spin Rabi oscillations, and, by avoiding use of an ancillary spin for readout, we are able to obtain long intrinsic electron spin coherence times, limited only by the donor concentration. We go on to experimentally address critical issues for adopting this scheme for single spin measurement in silicon nanodevices, including the effects of strain, electric fields, and non-resonant excitation. This lays the foundations for realising a versatile readout method for single spin readout with relaxed magnetic field and temperature requirements compared with spin-dependent tunneling. △ Less

Submitted 5 November, 2014; originally announced November 2014.

Comments: 13 pages, 4 figures

Stark shift and field ionization of arsenic donors in $^{28}$Si-SOI structures

Authors: C. C. Lo, S. Simmons, R. Lo Nardo, C. D. Weis, A. M. Tyryshkin, J. Meijer, D. Rogalla, S. A. Lyon, J. Bokor, T. Schenkel, J. J. L. Morton

Abstract: We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large an… ▽ More We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to $\sim$ 2 V/$μ$m to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the $^{28}$Si SOI layer and find a contact hyperfine Stark parameter of $η_a=-1.9\pm0.2\times10^{-3} μ$m$^2$/V$^2$. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance. △ Less

Submitted 27 January, 2014; originally announced January 2014.

Comments: 5 pages, 3 figures

Microwave manipulation of electrically injected spin polarized electrons in silicon

Authors: C. C. Lo, J. Li, I. Appelbaum, J. J. L. Morton

Abstract: We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic metal films, we show that moderate microwave power can be applied to the devices without altering the device operation significantly. Resonant microwave irradiation is used to induce spin rotation of spin-polarized electrons… ▽ More We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic metal films, we show that moderate microwave power can be applied to the devices without altering the device operation significantly. Resonant microwave irradiation is used to induce spin rotation of spin-polarized electrons as they travel across a silicon channel, and the resultant spin polarization is subsequently detected by a ferromagnetic Schottky barrier spin detector. These results demonstrate the potential for combining advanced electron spin resonance techniques to complement the study of semiconductor spintronic devices beyond standard magnetotransport measurements. △ Less

Submitted 12 December, 2013; originally announced December 2013.

Comments: 5 pages, 4 figures

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

Authors: C. D. Weis, C. C. Lo, V. Lang, A. M. Tyryshkin, R. E. George, K. M. Yu, J. Bokor, S. A. Lyon, J. J. L. Morton, T. Schenkel

Abstract: We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms… ▽ More We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon. △ Less

Submitted 26 February, 2012; v1 submitted 7 February, 2012; originally announced February 2012.

Comments: 4 pages, 4 figures

A spin quantum bit architecture with coupled donors and quantum dots in silicon

Authors: T. Schenkel, C. C. Lo, C. D. Weis, J. Bokor, A. M. Tyryshkin, S. A. Lyon

Abstract: Spins of donor electrons and nuclei in silicon are promising quantum bit (qubit) candidates which combine long coherence times with the fabrication finesse of the silicon nanotechnology industry. We outline a potentially scalable spin qubit architecture where donor nuclear and electron spins are coupled to spins of electrons in quantum dots and discuss requirements for donor placement aligned to q… ▽ More Spins of donor electrons and nuclei in silicon are promising quantum bit (qubit) candidates which combine long coherence times with the fabrication finesse of the silicon nanotechnology industry. We outline a potentially scalable spin qubit architecture where donor nuclear and electron spins are coupled to spins of electrons in quantum dots and discuss requirements for donor placement aligned to quantum dots by single ion implantation. △ Less

Submitted 10 October, 2011; originally announced October 2011.

Report number: in "Single Atom Electronics", E. Prati, T. Shinada (eds), Pan Stanford, 2013, pp. 255-279

Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas

Authors: C. C. Lo, V. Lang, R. E. George, J. J. L. Morton, A. M. Tyryshkin, S. A. Lyon, J. Bokor, T. Schenkel

Abstract: We have measured the electrically detected magnetic resonance of channel-implanted donors in silicon field-effect transistors in resonant X- ($9.7\:$GHz) and W-band ($94\:$GHz) microwave cavities, with corresponding Zeeman fields of $0.35\:$T and $3.36\:$T, respectively. It is found that the conduction electron resonance signal increases by two orders of magnitude from X- to W-band, while the hype… ▽ More We have measured the electrically detected magnetic resonance of channel-implanted donors in silicon field-effect transistors in resonant X- ($9.7\:$GHz) and W-band ($94\:$GHz) microwave cavities, with corresponding Zeeman fields of $0.35\:$T and $3.36\:$T, respectively. It is found that the conduction electron resonance signal increases by two orders of magnitude from X- to W-band, while the hyperfine-split donor resonance signals are enhanced by over one order of magnitude. We rule out a bolometric origin of the resonance signals, and find that direct spin-dependent scattering between the two-dimensional electron gas and neutral donors is inconsistent with the experimental observations. We propose a new polarization transfer model from the donor to the conduction electrons as the main contributer to the spin resonance signals observed. △ Less

Submitted 17 December, 2010; originally announced December 2010.

Comments: 5 pages, 3 figures

Critical issues in the formation of quantum computer test structures by ion implantation

Authors: T. Schenkel, C. C. Lo, C. D. Weis, A. Schuh, A. Persaud, J. Bokor

Abstract: The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent results in the characterization of spin dependent transport and single ion do** and then discuss the diffusion and segregation behaviour of phosphorus, antimon… ▽ More The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent results in the characterization of spin dependent transport and single ion do** and then discuss the diffusion and segregation behaviour of phosphorus, antimony and bismuth ions from low fluence, low energy implantations as characterized through depth profiling by secondary ion mass spectrometry (SIMS). Both phosphorus and bismuth are found to segregate to the SiO2/Si interface during activation anneals, while antimony diffusion is found to be minimal. An effect of the ion charge state on the range of antimony ions, 121Sb25+, in SiO2/Si is also discussed. △ Less

Submitted 29 April, 2009; originally announced April 2009.

Map** of ion beam induced current changes in FinFETs

Authors: C. D. Weis, A. Schuh, A. Batra, A. Persaud, I. W. Rangelow, J. Bokor, C. C. Lo, S. Cabrini, D. Olynick, S. Duhey, T. Schenkel

Abstract: We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of posi… ▽ More We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained. △ Less

Submitted 12 September, 2008; v1 submitted 11 September, 2008; originally announced September 2008.

Comments: IBMM 2008 conference proceeding

Spin-dependent scattering in a silicon transistor

Authors: Rogerio de Sousa, Cheuk Chi Lo, Jeffrey Bokor

Abstract: The scattering of conduction electrons off neutral donors depends sensitively on the relative orientation of their spin states. We present a theory of spin-dependent scattering in the two dimensional electron gas (2DEG) of field effect transistors. Our theory shows that the scattering mechanism is dominated by virtual transitions to negatively ionized donor levels. This effect translates into a… ▽ More The scattering of conduction electrons off neutral donors depends sensitively on the relative orientation of their spin states. We present a theory of spin-dependent scattering in the two dimensional electron gas (2DEG) of field effect transistors. Our theory shows that the scattering mechanism is dominated by virtual transitions to negatively ionized donor levels. This effect translates into a source-drain current that always gets reduced when donor spins are at resonance with a strong microwave field. We propose a model for donor impurities interacting with conduction electrons in a silicon transistor, and compare our explicit numerical calculations to electrically detected magnetic resonance (EDMR) experiments. Remarkably, we show that EDMR is optimal for donors placed into a sweet spot located at a narrow depth window quite far from the 2DEG interface. This allows significant optimization of spin signal intensity for the minimal number of donors placed into the sweet spot, enabling the development of single spin readout devices. Our theory reveals an interesting dependence on conduction electron spin polarization p_c. As p_c increases upon spin injection, the EDMR amplitude first increases as p_{c}^{2}, and then saturates when a polarization threshold p_T is reached. These results show that it is possible to use EDMR as an in-situ probe of carrier spin polarization in silicon and other materials with weak spin-orbit coupling. △ Less

Submitted 24 July, 2009; v1 submitted 27 June, 2008; originally announced June 2008.

Journal ref: Phys. Rev. B 80, 045320 (2009)

Single-atom do** for quantum device development in diamond and silicon

Authors: C. D. Weis, A. Schuh, A. Batra, A. Persaud, I. W. Rangelow, J. Bokor, C. C. Lo, S. Cabrini, E. Sideras-Haddad, G. D. Fuchs, R. Hanson, D. D. Awschalom, T. Schenkel

Abstract: The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers. We describe a single atom injector, in which the im… ▽ More The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers. We describe a single atom injector, in which the imaging and alignment capabilities of a scanning force microscope (SFM) are integrated with ion beams from a series of ion sources and with sensitive detection of current transients induced by incident ions. Ion beams are collimated by a small hole in the SFM tip and current changes induced by single ion impacts in transistor channels enable reliable detection of single ion hits. We discuss resolution limiting factors in ion placement and processing and paths to single atom (and color center) array formation for systematic testing of quantum computer architectures in silicon and diamond. △ Less

Submitted 12 June, 2008; originally announced June 2008.

Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors

Authors: C. C. Lo, J. Bokor, T. Schenkel, A. M. Tyryshkin, S. A. Lyon

Abstract: We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where the spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We di… ▽ More We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where the spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering as a mechanism for the readout of donor spin-states in silicon based quantum computers. △ Less

Submitted 6 November, 2007; v1 submitted 26 October, 2007; originally announced October 2007.

Comments: 14 pages, 3 figures. Correction made to figure3(b)

Detection of low energy single ion impacts in micron scale transistors at room temperature

Authors: A. Batra, C. D. Weis, J. Reijonen, A. Persaud, S. Cabrini, C. C. Lo, J. Bokor, T. Schenkel

Abstract: We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar, micro-scale FETs by electron beam assisted etching. FET currents increase due to the generation of positively charged defects in gate oxides when io… ▽ More We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar, micro-scale FETs by electron beam assisted etching. FET currents increase due to the generation of positively charged defects in gate oxides when ions (121Sb12+, 14+, Xe6+; 50 to 70 keV) im**e into channel regions. Implant damage is repaired by rapid thermal annealing, enabling iterative cycles of device do** and electrical characterization for development of single atom devices and studies of dopant fluctuation effects. △ Less

Submitted 27 September, 2007; v1 submitted 25 September, 2007; originally announced September 2007.

Metallic behaviour of carrier-polarized C$_{60}$ molecular layers: Experiment and Theory

Authors: Z. H. Lu, C. C. Lo, C. J. Huang, M. W. C. Dharma-wardana, Marek Z. Zgierski

Abstract: Although C$_{60}$ is a molecular crystal with a bandgap E$_g$ of ~2.5 eV, we show that E$_g$ is strongly affected by injected charge. In sharp contrast to the Coulomb blockade typical of quantum dots, E$_g$ is {\it reduced} by the Coulomb effects. The conductance of a thin C$_{60}$ layer sandwiched between metal (Al, Ag, Au, Mg and Pt) contacts is investigated. Excellent Ohmic conductance is obs… ▽ More Although C$_{60}$ is a molecular crystal with a bandgap E$_g$ of ~2.5 eV, we show that E$_g$ is strongly affected by injected charge. In sharp contrast to the Coulomb blockade typical of quantum dots, E$_g$ is {\it reduced} by the Coulomb effects. The conductance of a thin C$_{60}$ layer sandwiched between metal (Al, Ag, Au, Mg and Pt) contacts is investigated. Excellent Ohmic conductance is observed for Al electrodes protected with ultra-thin LiF layers. First-principles calculations, Hubbard models etc., show that the energy gap of C$_{60}$ is dramatically reduced when electrons hop from C$_{60}^-$ to C$_{60}$. △ Less

Submitted 2 November, 2004; originally announced November 2004.

Comments: 4 PRL style pages, 2 figures. email: [email protected]

Journal ref: Phys. Rev. B vol. 72, 155440 (2005)