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Liquid-State Semiconductor Lasers Based on Type-(I+II) Colloidal Quantum Dots
Authors:
Donghyo Hahm,
Valerio Pinchetti,
Clément Livache,
Namyoung Ahn,
Jungchul Noh,
Xueyang Li,
Jun Du,
Kaifeng Wu,
Victor I. Klimov
Abstract:
Present-day liquid-state lasers are based on organic dyes. Here we demonstrate an alternative class of liquid lasers that employ solutions of colloidal quantum dots (QDs). Previous efforts to realize such devices have been hampered by fast nonradiative Auger recombination of multi-carrier states needed for optical gain. We overcome this challenge using type-(I+II) QDs that feature a trion-like opt…
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Present-day liquid-state lasers are based on organic dyes. Here we demonstrate an alternative class of liquid lasers that employ solutions of colloidal quantum dots (QDs). Previous efforts to realize such devices have been hampered by fast nonradiative Auger recombination of multi-carrier states needed for optical gain. We overcome this challenge using type-(I+II) QDs that feature a trion-like optical-gain state with strongly suppressed Auger recombination. When combined with a Littrow optical cavity, static (non-circulated) solutions of these QDs exhibit stable lasing tunable from 634 nm to 594 nm. These results point towards the feasibility of technologically viable dye-like QD lasers that feature wide spectral tunability and, importantly, allow for stable operation without the need for a bulky circulation system, a standard attribute of traditional dye lasers.
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Submitted 16 January, 2024;
originally announced January 2024.
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Optically Excited Two-Band Amplified Spontaneous Emission from a High-Current-Density Quantum-Dot LED
Authors:
Namyoung Ahn,
Young-Shin Park,
Clément Livache,
Jun Du,
Victor I. Klimov
Abstract:
Laser diodes based on solution-processable materials could benefit numerous technologies including integrated electronics and photonics, telecommunication, and medical diagnostics. An attractive system for implementing these devices is colloidal semiconductor quantum dots (QDs). The primary challenge that hampered progress towards a QD laser diode (QLD) has been fast nonradiative Auger decay of op…
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Laser diodes based on solution-processable materials could benefit numerous technologies including integrated electronics and photonics, telecommunication, and medical diagnostics. An attractive system for implementing these devices is colloidal semiconductor quantum dots (QDs). The primary challenge that hampered progress towards a QD laser diode (QLD) has been fast nonradiative Auger decay of optical-gain-active multicarrier states. Recently, this problem has been resolved by employing continuously graded QDs (cg-QDs) wherein Auger recombination is strongly suppressed. The use of these structures allowed for demonstrations of optical gain with electrical pum** and optically-excited lasing in multilayered LED-like devices. Here we report on achieving the next critical milestone towards a QLD, which is the demonstration of optically excited amplified spontaneous emission from a fully functional high-current density electroluminescent device. This advance has become possible due to excellent optical gain properties of novel 'compact' cg-QDs and a new LED architecture, which allows for concerted optimization of its optical and electrical properties. The results of this work strongly suggest the feasibility of the final step towards a functional QLD, which is the demonstration of lasing with electrical pum**.
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Submitted 4 April, 2022;
originally announced April 2022.
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Transport and Phototransport in ITO Nanocrystals with Short to Long-Wave Infrared Absorption
Authors:
Junling Qu,
Clément Livache,
Bertille Martinez,
Charlie Gréboval,
Audrey Chu,
Elisa Meriggio,
Julien Ramade,
Hervé Cruguel,
Xiang Zhen Xu,
Anna Proust,
Florence Volatron,
Grégory Cabailh,
Nicolas Goubet,
Emmanuel Lhuillier
Abstract:
Nanocrystals are often described as an interesting strategy for the design of low-cost optoelectronic devices especially in the infrared range. However the driving materials reaching infrared absorption are generally heavy metalcontaining (Pb and Hg) with a high toxicity. An alternative strategy to achieve infrared transition is the use of doped semiconductors presenting intraband or plasmonic tra…
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Nanocrystals are often described as an interesting strategy for the design of low-cost optoelectronic devices especially in the infrared range. However the driving materials reaching infrared absorption are generally heavy metalcontaining (Pb and Hg) with a high toxicity. An alternative strategy to achieve infrared transition is the use of doped semiconductors presenting intraband or plasmonic transition in the short, mid and long-wave infrared. This strategy may offer more flexibility regarding the range of possible candidate materials. In particular, significant progresses have been achieved for the synthesis of doped oxides and for the control of their do** magnitude. Among them, tin doped indium oxide (ITO) is the one providing the broadest spectral tunability. Here we test the potential of such ITO nanoparticles for photoconduction in the infrared. We demonstrate that In2O3 nanoparticles presents an intraband absorption in the mid infrared range which is transformed into a plasmonic feature as do** is introduced. We have determined the cross section associated with the plasmonic transition to be in the 1-3x10-13 cm2 range. We have observed that the nanocrystals can be made conductive and photoconductive due to a ligand exchange using a short carboxylic acid, leading to a dark conduction with n-type character. We bring further evidence that the observed photoresponse in the infrared is the result of a bolometric effect.
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Submitted 2 January, 2019;
originally announced March 2019.
