Direct Band Gap Semiconducting Holey Graphyne: Structure, Synthesis and Potential Applications
Authors:
Xinghui Liu1,
Soo Min Cho,
Shiru Lin,
Eunbhin Yun,
Eun Hee Baek,
Zhongfang Chen,
Do Hyun Ryu,
Hyoyoung Lee
Abstract:
Here we report two-dimensional (2D) single-crystalline holey-graphyne (HGY) created an interfacial two-solvent system through a Castro-Stephens coupling reaction from 1,3,5-tribromo-2,4,6-triethynylbenzene. HGY is a new type of 2D carbon allotrope whose structure is comprised of a pattern of six-vertex and eight-vertex rings. The carbon-carbon 2D network of HGY is alternately linked between benzen…
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Here we report two-dimensional (2D) single-crystalline holey-graphyne (HGY) created an interfacial two-solvent system through a Castro-Stephens coupling reaction from 1,3,5-tribromo-2,4,6-triethynylbenzene. HGY is a new type of 2D carbon allotrope whose structure is comprised of a pattern of six-vertex and eight-vertex rings. The carbon-carbon 2D network of HGY is alternately linked between benzene rings and sp (carbon-carbon triple bond) bonding. The ratio of the sp over sp2 bonding is 50%. It is confirmed that HGY is stable by DFT calculation. The vibrational, optic, and electric properties of HGY are investigated theoretically and experimentally. It is a p-type semiconductor that embraces a natural direct band gap (~ 1.0 eV) with high hole mobility and electron mobility at room temperature. This report is expected to help develop a new types of carbon-based semiconductor devices with high mobility.
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Submitted 8 July, 2019;
originally announced July 2019.
