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Correlated Electronic Structure and Density-Wave Gap in Trilayer Nickelate La4Ni3O10
Authors:
X. Du,
Y. D. Li,
Y. T. Cao,
C. Y. Pei,
M. X. Zhang,
W. X. Zhao,
K. Y. Zhai,
R. Z. Xu,
Z. K. Liu,
Z. W. Li,
J. K. Zhao,
G. Li,
Y. L. Chen,
Y. P. Qi,
H. J. Guo,
L. X. Yang
Abstract:
The discovery of pressurized superconductivity at 80 K in La3Ni2O7 officially brings nickelates into the family of high-temperature superconductors, which gives rise to not only new insights but also mysteries in the strongly correlated superconductivity. More recently, the sibling compound La4Ni3O10 was also shown to be superconducting below about 25 K under pressure, further boosting the popular…
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The discovery of pressurized superconductivity at 80 K in La3Ni2O7 officially brings nickelates into the family of high-temperature superconductors, which gives rise to not only new insights but also mysteries in the strongly correlated superconductivity. More recently, the sibling compound La4Ni3O10 was also shown to be superconducting below about 25 K under pressure, further boosting the popularity of nickelates in the Ruddlesden-Popper phase. In this study, combining high-resolution angle-resolved photoemission spectroscopy and ab initio calculation, we systematically investigate the electronic structures of La4Ni3O10 at ambient pressure. We reveal a high resemblance of La4Ni3O10 with La3Ni2O7 in the orbital-dependent fermiology and electronic structure, suggesting a similar electronic correlation between the two compounds. The temperature-dependent measurements imply an orbital-dependent energy gap related to the density-wave transition in La4Ni3O10. By comparing the theoretical pressure-dependent electronic structure, clues about the superconducting high-pressure phase can be deduced from the ambient measurements, providing crucial information for deciphering the unconventional superconductivity in nickelates.
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Submitted 30 May, 2024;
originally announced May 2024.
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Viscosity bounds in liquids with different structure and bonding types
Authors:
M. Withington,
H. L. Devereux,
C. Cockrell,
A. M. Elena,
I. T. Todorov,
Z. K. Liu,
S. L. Shang,
J. S. McCloy,
P. A. Bingham,
K. Trachenko
Abstract:
Recently, it was realised that liquid viscosity has a lower bound which is nearly constant for all liquids and is governed by fundamental physical constants. This was supported by experimental data in noble and molecular liquids. Here, we perform large-scale molecular dynamics simulations to ascertain this bound in two other important liquid types: the ionic molten salt system LiF and metallic Pb.…
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Recently, it was realised that liquid viscosity has a lower bound which is nearly constant for all liquids and is governed by fundamental physical constants. This was supported by experimental data in noble and molecular liquids. Here, we perform large-scale molecular dynamics simulations to ascertain this bound in two other important liquid types: the ionic molten salt system LiF and metallic Pb. We find that these ionic and metallic systems similarly have lower viscosity bounds corresponding to the minimum of kinematic viscosity of about 10$^{-7}$ $\frac{{\rm m}^2}{\rm s}$. We show that this agrees with experimental data in other systems with different structures and bonding types, including noble, molecular, metallic and covalent liquids. This expands the universality of viscosity bounds into the main system types known.
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Submitted 6 January, 2024;
originally announced January 2024.
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Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4
Authors:
W. X. Zhao,
M. Yang,
R. Z. Xu,
X. Du,
Y. D. Li,
K. Y. Zhai,
C. Peng,
D. Pei,
H. Gao,
Y. W. Li,
L. X. Xu,
J. F. Han,
Y. Huang,
Z. K. Liu,
Y. G. Yao,
J. C. Zhuang,
Y. Du,
J. J. Zhou,
Y. L. Chen,
L. X. Yang
Abstract:
The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk1-5. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measureme…
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The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk1-5. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements with submicron spatial and spin resolutions, we systematically investigate the electronic structure and spin texture of quasi-one-dimensional (1D) HOTI candidate Bi4Br4. In contrast to the bulk-state-dominant spectra on the (001) surface, we observe gapped surface states on the (100) surface, whose dispersion and spin-polarization agree well with our ab initio calculations. Moreover, we reveal in-gap states connecting the surface valence and conduction bands, which is an explicit signature of the existence of hinge states inside the (100) surface gap. Our findings provide compelling evidence for the HOTI phase of Bi4Br4. The identification of the higher-order topological phase will lay the promising prospect of applications based on 1D spin-momentum locked current in electronic and spintronic devices.
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Submitted 6 November, 2023;
originally announced November 2023.
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Orbital-selective charge-density wave in TaTe$_4$
Authors:
R. Z. Xu,
X. Du,
J. S. Zhou,
X. Gu,
Q. Q. Zhang,
Y. D. Li,
W. X. Zhao,
F. W. Zheng,
M. Arita,
K. Shimada,
T. K. Kim,
C. Cacho,
Y. F. Guo,
Z. K. Liu,
Y. L. Chen,
L. X. Yang
Abstract:
TaTe$_4$, a metallic charge-density wave (CDW) material discovered decades ago, has attracted renewed attention due to its rich interesting properties such as pressure-induced superconductivity and candidate non-trivial topological phase. Here, using high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of TaTe…
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TaTe$_4$, a metallic charge-density wave (CDW) material discovered decades ago, has attracted renewed attention due to its rich interesting properties such as pressure-induced superconductivity and candidate non-trivial topological phase. Here, using high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of TaTe$_4$. At 26 K, we observe a CDW gap as large as 290 meV, which persists up to 500 K. The CDW-modulated band structure shows a complex reconstruction that closely correlates with the lattice distortion. Inside the CDW gap, there exist highly dispersive energy bands contributing to the remnant Fermi surface and metallic behavior in the CDW state. Interestingly, our ab-initio calculation reveals that the large CDW gap mainly opens in the electronic states with out-of-plane orbital components, while the in-gap metallic states originate from in-plane orbitals, suggesting an orbital texture that couples with the CDW order. Our results shed light on the interplay between electron, lattice, and orbital in quasi-one-dimensional CDW materials.
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Submitted 16 August, 2023;
originally announced August 2023.
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Genomic Materials Design: CALculation of PHAse Dynamics
Authors:
G. B Olson,
Z. K. Liu
Abstract:
The CALPHAD system of fundamental phase-level databases, now known as the Materials Genome, has enabled a mature technology of computational materials design and qualification that has already met the acceleration goals of the national Materials Genome Initiative. As first commercialized by QuesTek Innovations, the methodology combines efficient genomic-level parametric design of new material comp…
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The CALPHAD system of fundamental phase-level databases, now known as the Materials Genome, has enabled a mature technology of computational materials design and qualification that has already met the acceleration goals of the national Materials Genome Initiative. As first commercialized by QuesTek Innovations, the methodology combines efficient genomic-level parametric design of new material composition and process specifications with multidisciplinary simulation-based forecasting of manufacturing variation, integrating efficient uncertainty management. Recent projects demonstrated under the multi-institutional CHiMaD Design Center notably include novel alloys designed specifically for the new technology of additive manufacturing. With the proven success of the CALPHAD-based Materials Genome technology, current university research emphasizes new methodologies for affordable accelerated expansion of more accurate CALPHAD databases. Rapid adoption of these new capabilities by US apex corporations has compressed the materials design and development cycle to under 2 years, enabling a new "materials concurrency" integrated into a new level of concurrent engineering supporting an unprecedented level of manufacturing innovation.
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Submitted 22 July, 2023; v1 submitted 8 May, 2023;
originally announced May 2023.
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Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4
Authors:
Q. Q. Zhang,
Y. Shi,
K. Y. Zhai,
W. X. Zhao,
X. Du,
J. S. Zhou,
X. Gu,
R. Z. Xu,
Y. D. Li,
Y. F. Guo,
Z. K. Liu,
C. Chen,
S. -K. Mo,
T. K. Kim,
C. Cacho,
J. W. Yu,
W. Li,
Y. L. Chen,
Jiun-Haw Chu,
L. X. Yang
Abstract:
EuTe4 is a newly-discovered van der Waals material exhibiting a novel charge-density wave (CDW) with a large thermal hysteresis in the resistivity and CDW gap. In this work, we systematically study the electronic structure and transport properties of EuTe4 using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetoresistance measurements, and scanning tunneling microscopy (STM…
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EuTe4 is a newly-discovered van der Waals material exhibiting a novel charge-density wave (CDW) with a large thermal hysteresis in the resistivity and CDW gap. In this work, we systematically study the electronic structure and transport properties of EuTe4 using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetoresistance measurements, and scanning tunneling microscopy (STM). We observe a CDW gap of about 200 meV at low temperatures that persists up to 400 K, suggesting that the CDW transition occurs at a much higher temperature. We observe a large thermal hysteretic behavior of the ARPES intensity near the Fermi level, consistent with the resistivity measurement. The hysteresis in the resistivity measurement does not change under a magnetic field up to 7 T, excluding the thermal magnetic hysteresis mechanism. Instead, the surface topography measured with STM shows surface domains with different CDW trimerization directions, which may be important for the thermal hysteretic behavior of EuTe4. Interestingly, we observe a large negative magnetoresistance at low temperatures that can be associated with the canting of magnetically ordered Eu spins. Our work shed light on the understanding of magnetic, transport, and electronic properties of EuTe4.
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Submitted 5 March, 2023;
originally announced March 2023.
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Development of a Laser-based angle-resolved-photoemission spectrometer with sub-micrometer spatial resolution and high-efficiency spin detection
Authors:
R. Z. Xu,
X. Gu,
W. X. Zhao,
J. S. Zhou,
Q. Q. Zhang,
X. Du,
Y. D. Li,
Y. H. Mao,
D. Zhao,
K. Huang,
C. F. Zhang,
F. Wang,
Z. K. Liu,
Y. L. Chen,
L. X. Yang
Abstract:
Angle-resolved photoemission spectroscopy with sub-micrometer spatial resolution (μ-ARPES), has become a powerful tool for studying quantum materials. To achieve sub-micrometer or even nanometer-scale spatial resolution, it is important to focus the incident light beam (usually from the synchrotron radiation) using X-ray optics such as the zone plate or ellipsoidal capillary mirrors. Recently, we…
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Angle-resolved photoemission spectroscopy with sub-micrometer spatial resolution (μ-ARPES), has become a powerful tool for studying quantum materials. To achieve sub-micrometer or even nanometer-scale spatial resolution, it is important to focus the incident light beam (usually from the synchrotron radiation) using X-ray optics such as the zone plate or ellipsoidal capillary mirrors. Recently, we developed a laser-based μ-ARPES with spin-resolution (LMS-ARPES). The 177 nm laser beam is achieved by frequency doubling a 355 nm beam using a KBBF crystal and subsequently focused using an optical lens with a focal length of about 16 mm. By characterizing the focused spot size using different methods and performing spatial-scanning photoemission measurement, we confirm the sub-micron spatial resolution of the system. Compared with the μ-ARPES facilities based on synchrotron radiation, our LMS-ARPES system is not only more economical and convenient but also with higher photon flux (> 5E13 photons/s), thus enabling the high-resolution and high-statistics measurements. Moreover, the system is equipped with a two-dimensional spin detector based on exchange scattering at a surface-passivated iron film grown on a W(100) substrate. We investigate the spin structure of the prototype topological insulator Bi2Se3 and reveal a high spin-polarization rate, confirming its spin-momentum locking property. This lab-based LMS-ARPES will be a powerful research tool for studying the local fine electronic structures of different condensed matter systems, including topological quantum materials, mesoscopic materials and structures, and phase-separated materials.
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Submitted 30 January, 2023;
originally announced January 2023.
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Crossed Luttinger Liquid Hidden in a Quasi-two-dimensional Material η-Mo4O11
Authors:
X. Du,
L. Kang,
Y. Y. Lv,
J. S. Zhou,
X. Gu,
R. Z. Xu,
Q. Q. Zhang,
Z. X. Yin,
W. X. Zhao,
Y. D. Li,
S. M. He,
D. Pei,
Y. B. Chen,
M. X. Wang,
Z. K. Liu,
Y. L. Chen,
L. X. Yang
Abstract:
Although the concept of Luttinger liquid (LL) that describes a one-dimensional (1D) interacting fermion system collapses in higher dimensions, it has been proposed to be closely related to many mysteries including the normal state of cuprate superconductor, unconventional metal, and quantum criticality. Therefore, the generalization of LL model to higher dimensions has attracted substantial resear…
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Although the concept of Luttinger liquid (LL) that describes a one-dimensional (1D) interacting fermion system collapses in higher dimensions, it has been proposed to be closely related to many mysteries including the normal state of cuprate superconductor, unconventional metal, and quantum criticality. Therefore, the generalization of LL model to higher dimensions has attracted substantial research attention. Here we systematically investigate the electronic structure of a quasi-2D compound η-Mo4O11 using high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation. Remarkably, we reveal a prototypical LL behavior originating from the crossing quasi-1D chain arrays hidden in the quasi-2D crystal structure. Our results suggest that η-Mo4O11 materializes the long sought-after crossed LL phase, where the orthogonal orbital components significantly reduce the coupling between intersecting quasi-1D chains and therefore maintain the essential properties of LL. Our finding not only presents a realization of 2D LL, but also provides a new angle to understand non-Fermi liquid behaviors in other 2D and 3D quantum materials.
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Submitted 15 September, 2022;
originally announced September 2022.
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Direct observation of quantum anomalous vortex in Fe(Se,Te)
Authors:
Y. S. Lin,
S. Y. Wang,
X. Zhang,
Y. Feng,
Y. P. Pan,
H. Ru,
J. J. Zhu,
B. K. Xiang,
K. Liu,
C. L. Zheng,
L. Y. Wei,
M. X. Wang,
Z. K. Liu,
L. Chen,
K. Jiang,
Y. F. Guo,
Ziqiang Wang,
Y. H. Wang
Abstract:
Vortices are topological defects of type-II superconductors in an external magnetic field. In a similar fashion to a quantum anomalous Hall insulator, quantum anomalous vortex (QAV) spontaneously nucleates due to orbital-and-spin exchange interaction between vortex core states and magnetic impurity moment, breaking time-reversal symmetry (TRS) of the vortex without an external field. Here, we used…
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Vortices are topological defects of type-II superconductors in an external magnetic field. In a similar fashion to a quantum anomalous Hall insulator, quantum anomalous vortex (QAV) spontaneously nucleates due to orbital-and-spin exchange interaction between vortex core states and magnetic impurity moment, breaking time-reversal symmetry (TRS) of the vortex without an external field. Here, we used scanning superconducting quantum interference device microscopy (sSQUID) to search for its signatures in iron-chalcogenide superconductor Fe(Se,Te). Under zero magnetic field, we found a stochastic distribution of isolated anomalous vortices and antivortices with flux quanta $Φ_0$. By applying a small local magnetic field under the coil of the nano-SQUID device, we observed hysteretic flip** of the vortices reminiscent of the switching of ferromagnetic domains, suggesting locally broken-TRS. We further showed vectorial rotation of a flux line linking a paired vortex-antivortex with the local field. These unique properties of the anomalous vortices satisfied the defining criteria of QAV. Our observation suggests a quantum vortex phase with spontaneous broken-TRS in a high-temperature superconductor.
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Submitted 1 August, 2022;
originally announced August 2022.
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Hybridization and Correlation between f- and d-orbital electrons in a valence fluctuating compound EuNi2P2
Authors:
Z. X. Yin,
X. Du,
W. Z. Cao,
J. Jiang,
C. Chen,
S. R. Duan,
J. S. Zhou,
X. Gu,
R. Z. Xu,
Q. Q. Zhang,
W. X. Zhao,
Y. D. Li,
Yi-feng Yang,
H. F. Yang,
A. J. Liang,
Z. K. Liu,
H. Yao,
Y. P. Qi,
Y. L. Chen,
L. X. Yang
Abstract:
The interaction between localized f and itinerant conduction electrons is crucial in the electronic properties of heavy fermion and valence fluctuating compounds. Using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structure of the archetypical valence fluctuating compound EuNi2P2 that hosts multiple f electrons. At low temperatures, we rev…
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The interaction between localized f and itinerant conduction electrons is crucial in the electronic properties of heavy fermion and valence fluctuating compounds. Using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structure of the archetypical valence fluctuating compound EuNi2P2 that hosts multiple f electrons. At low temperatures, we reveal the hybridization between Eu 4f and Ni 3d states, which contributes to the electron mass enhancement, consistent with the periodic Anderson model. With increasing temperature, interestingly, we observe opposite temperature evolution of electron spectral function above and below the Kondo coherence temperature near 110 K, which is in contrast to the monotonic valence change and beyond the expectation of the periodic Anderson model. We argue that both f-d hybridization and correlation are imperative in the electronic properties of EuNi2P2. Our results shed light on the understanding of novel properties, such as heavy fermion behaviors and valence fluctuation, of rare-earth transition-metal intermetallic compounds with multiple f electrons.
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Submitted 26 June, 2022;
originally announced June 2022.
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Visualization of Chiral Electronic Structure and Anomalous Optical Response in a Material with Chiral Charge Density Waves
Authors:
H. F. Yang,
K. Y. He,
J. Koo,
S. W. Shen,
S. H. Zhang,
G. Liu,
Y. Z. Liu,
C. Chen,
A. J. Liang,
K. Huang,
M. X. Wang,
J. J. Gao,
X. Luo,
L. X. Yang,
J. P. Liu,
Y. P. Sun,
S. C. Yan,
B. H. Yan,
Y. L. Chen,
X. Xi,
Z. K. Liu
Abstract:
Chiral materials have attracted significant research interests as they exhibit intriguing physical properties, such as chiral optical response, spin-momentum locking and chiral induced spin selectivity. Recently, layered transition metal dichalcogenide 1T-TaS2 has been found to host a chiral charge density wave (CDW) order. Nevertheless, the physical consequences of the chiral order, for example,…
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Chiral materials have attracted significant research interests as they exhibit intriguing physical properties, such as chiral optical response, spin-momentum locking and chiral induced spin selectivity. Recently, layered transition metal dichalcogenide 1T-TaS2 has been found to host a chiral charge density wave (CDW) order. Nevertheless, the physical consequences of the chiral order, for example, in electronic structures and the optical properties, are yet to be explored. Here, we report the spectroscopic visualization of an emergent chiral electronic band structure in the CDW phase, characterized by windmill-shape Fermi surfaces. We uncover a remarkable chirality-dependent circularly polarized Raman response due to the salient chiral symmetry of CDW, although the ordinary circular dichroism vanishes. Chiral Fermi surfaces and anomalous Raman responses coincide with the CDW transition, proving their lattice origin. Our work paves a path to manipulate the chiral electronic and optical properties in two-dimensional materials and explore applications in polarization optics and spintronics.
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Submitted 19 May, 2022;
originally announced May 2022.
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Observation of non-trivial topological electronic structure of orthorhombic SnSe
Authors:
H. J. Zheng,
W. J. Shi,
C. W. Wang,
Y. Y. Lv,
W. Xia,
B. H. Li,
F. Wu,
S. M. He,
K. Huang,
S. T. Cui,
C. Chen,
H. F. Yang,
A. J. Liang,
M. X. Wang,
Z. Sun,
S. H. Yao,
Y. B. Chen,
Y. F. Guo,
Q. X. Mi,
L. X. Yang,
M. S. Bahramy,
Z. K. Liu,
Y. L. Chen
Abstract:
Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interests due to its superior thermoelectric performance. However, it's topological nature has long been ignored. In this work, by combining synchrotron-based angle-resolved photoemissi…
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Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interests due to its superior thermoelectric performance. However, it's topological nature has long been ignored. In this work, by combining synchrotron-based angle-resolved photoemission spectroscopy and ab-initio calculations, we systematically investigated the topological electronic structure of orthorhombic SnSe. By identifying the continuous gap in the valence bands due to the band inversion and the topological surface states on its (001) surface, we establish SnSe as a strong topological insulator. Furthermore, we studied the evolution of the topological electronic structure and propose the topological phase diagram in SnSe1-xTex. Our work reveals the topological non-trivial nature of SnSe and provides new understandings of its intriguing transport properties.
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Submitted 14 April, 2022;
originally announced April 2022.
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Robust Kagome Electronic Structure in Topological Quantum Magnets XMn6Sn6 (X = Dy, Tb, Gd, Y)
Authors:
X. Gu,
C. Chen,
W. S. Wei,
J. Y. Liu,
X. Du,
D. Pei,
J. S. Zhou,
R. Z. Xu,
Z. X. Yin,
W. X. Zhao,
Y. D. Li,
C. Jozwiak,
A. Bostwick,
E. Rotenberg,
D. Backes,
L. S. I. Veiga,
S. Dhesi,
T. Hesjedal,
G. van der Laan,
H. F. Du,
W. J. Jiang,
Y. P. Qi,
G. Li,
W. J. Shi,
Z. K. Liu
, et al. (2 additional authors not shown)
Abstract:
Crystal geometry can greatly influence the emergent properties of quantum materials. As an example, the kagome lattice is an ideal platform to study the rich interplay between topology, magnetism, and electronic correlation. In this work, combining high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of XMn6Sn6…
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Crystal geometry can greatly influence the emergent properties of quantum materials. As an example, the kagome lattice is an ideal platform to study the rich interplay between topology, magnetism, and electronic correlation. In this work, combining high-resolution angle-resolved photoemission spectroscopy and ab-initio calculation, we systematically investigate the electronic structure of XMn6Sn6 (X = Dy, Tb, Gd, Y) family compounds. We observe the Dirac fermion and the flat band arising from the magnetic kagome lattice of Mn atoms. Interestingly, the flat band locates in the same energy region in all compounds studied, regardless of their different magnetic ground states and 4f electronic configurations. These observations suggest a robust Mn magnetic kagome lattice across the XMn6Sn6 family, thus providing an ideal platform for the search and investigation on new emergent phenomena in magnetic topological materials.
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Submitted 20 March, 2022;
originally announced March 2022.
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Band-selective Holstein polaron in Luttinger liquid material A0.3MoO3 (A = K, Rb)
Authors:
L. Kang,
X. Du,
J. S. Zhou,
X. Gu,
Y. J. Chen,
R. Z. Xu,
Q. Q. Zhang,
S. C. Sun,
Z. X. Yin,
Y. W. Li,
D. Pei,
J. Zhang,
R. K. Gu,
Z. G. Wang,
Z. K. Liu,
R. Xiong,
J. Shi,
Y. Zhang,
Y. L. Chen,
L. X. Yang
Abstract:
(Quasi-)one-dimensional systems exhibit various fascinating properties such as Luttinger liquid behavior, Peierls transition, novel topological phases, and the accommodation of unique quasiparticles (e.g., spinon, holon, and soliton, etc.). Here we study molybdenum blue bronze A0.3MoO3 (A = K, Rb), a canonical quasi-one-dimensional charge-density-wave material, using laser-based angle-resolved pho…
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(Quasi-)one-dimensional systems exhibit various fascinating properties such as Luttinger liquid behavior, Peierls transition, novel topological phases, and the accommodation of unique quasiparticles (e.g., spinon, holon, and soliton, etc.). Here we study molybdenum blue bronze A0.3MoO3 (A = K, Rb), a canonical quasi-one-dimensional charge-density-wave material, using laser-based angle-resolved photoemission spectroscopy. Our experiment suggests that the normal phase of A0.3MoO3 is a prototypical Luttinger liquid, from which the charge-density-wave emerges with decreasing temperature. Prominently, we observe strong renormalizations of band dispersions, which is recognized as the spectral function of Holstein polaron derived from band-selective electron-phonon coupling in the system. We argue that the strong electron-phonon coupling plays a dominant role in electronic properties and the charge-density-wave transition in blue bronzes. Our results not only reconcile the long-standing heavy debates on the electronic properties of blue bronzes but also provide a rare platform to study novel composite quasiparticles in Luttinger liquid materials.
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Submitted 21 September, 2021;
originally announced September 2021.
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Observation of the Critical State to Multiple-Type Dirac Semimetal Phases in KMgBi
Authors:
D. F. Liu,
L. Y. W,
C. C. Le,
H. Y. Wang,
X. Zhang,
N. Kumar,
C. Shekhar,
N. B. M. Schröter,
Y. W. Li,
D. Pei,
L. X. Xu,
P. Dudin,
T. K. Kim,
C. Cacho,
J. Fujii,
I. Vobornik,
M. X. W,
L. X. Yang,
Z. K. Liu,
Y. F. Guo,
J. P. Hu,
C. Felser,
S. S. P. Parkin,
Y. L. Chen
Abstract:
Dirac semimetals (DSMs) are classified into different phases based on the types of the Dirac fermions. Tuning the transition among different types of the Dirac fermions in one system remains challenging. Recently, KMgBi was predicted to be located at a critical state that various types of Dirac fermions can be induced owing to the existence of a flat band. Here, we carried out systematic studies o…
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Dirac semimetals (DSMs) are classified into different phases based on the types of the Dirac fermions. Tuning the transition among different types of the Dirac fermions in one system remains challenging. Recently, KMgBi was predicted to be located at a critical state that various types of Dirac fermions can be induced owing to the existence of a flat band. Here, we carried out systematic studies on the electronic structure of KMgBi single crystal by combining angle-resolve photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS). The flat band was clearly observed near the Fermi level. We also revealed a small bandgap of ~ 20 meV between the flat band and the conduction band. These results demonstrate the critical state of KMgBi that transitions among various types of Dirac fermions can be tuned in one system.
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Submitted 18 June, 2021;
originally announced June 2021.
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Topological Phase Transition in a Magnetic Weyl Semimetal
Authors:
D. F. Liu,
Q. N. Xu,
E. K. Liu,
J. L. Shen,
C. C. Le,
Y. W. Li,
D. Pei,
A. J. Liang,
P. Dudin,
T. K. Kim,
C. Cacho,
Y. F. Xu,
Y. Sun,
L. X. Yang,
Z. K. Liu,
C. Felser,
S. S. P. Parkin,
Y. L. Chen
Abstract:
Topological Weyl semimetals (TWSs) are exotic crystals possessing emergent relativistic Weyl fermions connected by unique surface Fermi-arcs (SFAs) in their electronic structures. To realize the TWS state, certain symmetry (such as the inversion or time reversal symmetry) must be broken, leading to a topological phase transition (TPT). Despite the great importance in understanding the formation of…
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Topological Weyl semimetals (TWSs) are exotic crystals possessing emergent relativistic Weyl fermions connected by unique surface Fermi-arcs (SFAs) in their electronic structures. To realize the TWS state, certain symmetry (such as the inversion or time reversal symmetry) must be broken, leading to a topological phase transition (TPT). Despite the great importance in understanding the formation of TWSs and their unusual properties, direct observation of such a TPT has been challenging. Here, using a recently discovered magnetic TWS Co3Sn2S2, we were able to systematically study its TPT with detailed temperature dependence of the electronic structures by angle-resolved photoemission spectroscopy. The TPT with drastic band structures evolution was clearly observed across the Curie temperature (TC = 177 K), including the disappearance of the characteristic SFAs and the recombination of the spin-split bands that leads to the annihilation of Weyl points with opposite chirality. These results not only reveal important insights on the interplay between the magnetism and band topology in TWSs, but also provide a new method to control their exotic physical properties.
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Submitted 6 June, 2021;
originally announced June 2021.
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Measurement of Electronic Structure and Surface Reconstruction in the Superionic Cu2-xTe
Authors:
S. Liu,
W. Xia,
K. Huang,
D. Pei,
T. Deng,
A. J. Liang,
J. Jiang,
H. F. Yang,
J. Zhang,
H. J. Zheng,
Y. J. Chen,
L. X. Yang,
Y. F. Guo,
M. X. Wang,
Z. K. Liu,
Y. L. Chen
Abstract:
Recently, layered copper chalcogenides Cu2X family (X=S, Se, Te) has attracted tremendous research interests due to their high thermoelectric (TE) performance, which is partly due to the superionic behavior of mobile Cu ions, making these compounds phonon liquids. Here, we systematically investigate the electronic structure and its temperature evolution of the less studied single crystal Cu2-xTe b…
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Recently, layered copper chalcogenides Cu2X family (X=S, Se, Te) has attracted tremendous research interests due to their high thermoelectric (TE) performance, which is partly due to the superionic behavior of mobile Cu ions, making these compounds phonon liquids. Here, we systematically investigate the electronic structure and its temperature evolution of the less studied single crystal Cu2-xTe by the combination of angle resolved photoemission spectroscopy (ARPES) and scanning tunneling microscope/spectroscopy (STM/STS) experiments. While the band structure of the Cu2-xTe shows agreement with the calculations, we clearly observe a 2 * 2 surface reconstruction from both our low temperature ARPES and STM/STS experiments which survives up to room temperature. Interestingly, our low temperature STM experiments further reveal multiple types of reconstruction patterns, which suggests the origin of the surface reconstruction being the distributed deficiency of liquid-like Cu ions. Our findings reveal the electronic structure and impurity level of Cu2Te, which provides knowledge about its thermoelectric properties from the electronic degree of freedom.
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Submitted 24 May, 2021;
originally announced May 2021.
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Evidence of topological edge states in a superconducting nonsymmorphic nodal-line semimetal
Authors:
L. X. Xu,
Y. Y. Y. Xia,
S. Liu,
Y. W. Li,
L. Y. Wei,
H. Y. Wang,
C. W. Wang,
H. F. Yang,
A. J. Liang,
K. Huang,
T. Deng,
W. Xia,
X. Zhang,
H. J. Zheng,
Y. J. Chen,
L. X. Yang,
M. X. Wang,
Y. F. Guo,
G. Li,
Z. K. Liu,
Y. L. Chen
Abstract:
Topological materials host fascinating low dimensional gapless states at the boundary. As a prominent example, helical topological edge states (TESs) of two-dimensional topological insulators (2DTIs) and their stacked three-dimensional (3D) equivalent, weak topological insulators (WTIs), have sparked research enthusiasm due to their potential application in the next generation of electronics/spint…
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Topological materials host fascinating low dimensional gapless states at the boundary. As a prominent example, helical topological edge states (TESs) of two-dimensional topological insulators (2DTIs) and their stacked three-dimensional (3D) equivalent, weak topological insulators (WTIs), have sparked research enthusiasm due to their potential application in the next generation of electronics/spintronics with low dissipation. Here, we propose layered superconducting material CaSn as a WTI with nontrivial Z2 as well as nodal line semimetal protected by crystalline non-symmorphic symmetry. Our systematic angle-resolved photoemission spectroscopy (ARPES) investigation on the electronic structure exhibits excellent agreement with the calculation. Furthermore, scanning tunnelling microscopy/spectroscopy (STM/STS) at the surface step edge shows signatures of the expected TES. These integrated evidences from ARPES, STM/STS measurement and corresponding ab initio calculation strongly support the existence of TES in the non-symmorphic nodal line semimetal CaSn, which may become a versatile material platform to realize multiple exotic electronic states as well as topological superconductivity.
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Submitted 9 May, 2021; v1 submitted 7 May, 2021;
originally announced May 2021.
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Observation of the topological Dirac fermions and surface states in superconducting BaSn3
Authors:
K. Huang,
A. Y. Luo,
C. Chen,
G. N. Zhang,
X. L. Liu,
Y. W. Li,
F. Wu,
S. T. Cui,
Z. Sun,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
H. F. Yang,
L. X. Yang,
G. Xu,
Y. F. Guo,
Z. K. Liu,
Y. L. Chen
Abstract:
The interplay between topological electronic structure and superconductivity has attracted tremendous research interests recently as they could induce topological superconductivity (TSCs) which may be used to realize topological qubits for quantum computation. Among various TSC candidates, superconducting BaSn3 (Tc ~ 4.4 K) has been predicted to be a topological Dirac semimetal (TDS) hosting two p…
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The interplay between topological electronic structure and superconductivity has attracted tremendous research interests recently as they could induce topological superconductivity (TSCs) which may be used to realize topological qubits for quantum computation. Among various TSC candidates, superconducting BaSn3 (Tc ~ 4.4 K) has been predicted to be a topological Dirac semimetal (TDS) hosting two pairs of Dirac points along the G - A direction. Here, by combining the use of angle-resolved photoemission spectroscopy and ab initio calculations, we identified the predicted topological Dirac fermions and confirmed the TDS nature of the compound. In addition, we observed surface states connecting the Dirac points. Our observations demonstrate BaSn3 as a superconductor with nontrivial topological electronic structures.
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Submitted 27 April, 2021;
originally announced April 2021.
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Observation of Topological Superconductivity in a Stoichiometric Transition Metal Dichalcogenide 2M-WS2
Authors:
Y. W. Li,
H. J. Zheng,
Y. Q. Fang,
D. Q. Zhang,
Y. J. Chen,
C. Chen,
A. J. Liang,
W. J. Shi,
D. Pei,
L. X. Xu,
S. Liu,
J. Pan,
D. H. Lu,
M. Hashimoto,
A. Barinov,
S. W. Jung,
C. Cacho,
M. X. Wang,
Y. He,
L. Fu,
H. J. Zhang,
F. Q. Huang,
L. X. Yang,
Z. K. Liu,
Y. L. Chen
Abstract:
Topological superconductors (TSCs) are unconventional superconductors with bulk superconducting gap and in-gap Majorana states on the boundary that may be used as topological qubits for quantum computation. Despite their importance in both fundamental research and applications, natural TSCs are very rare. Here, combining state of the art synchrotron and laser-based angle-resolved photoemission spe…
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Topological superconductors (TSCs) are unconventional superconductors with bulk superconducting gap and in-gap Majorana states on the boundary that may be used as topological qubits for quantum computation. Despite their importance in both fundamental research and applications, natural TSCs are very rare. Here, combining state of the art synchrotron and laser-based angle-resolved photoemission spectroscopy, we investigated a stoichiometric transition metal dichalcogenide (TMD), 2M-WS2 with a superconducting transition temperature of 8.8 K (the highest among all TMDs in the natural form up to date) and observed distinctive topological surface states (TSSs). Furthermore, in the superconducting state, we found that the TSSs acquired a nodeless superconducting gap with similar magnitude as that of the bulk states. These discoveries not only evidence 2M-WS2 as an intrinsic TSC without the need of sensitive composition tuning or sophisticated heterostructures fabrication, but also provide an ideal platform for device applications thanks to its van der Waals layered structure.
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Submitted 14 April, 2021;
originally announced April 2021.
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Direct observation of the spin-orbit coupling effect in Magnetic Weyl semimetal Co3Sn2S2
Authors:
D. F. Liu,
E. K. Liu,
Q. N. Xu,
J. L. Shen,
Y. W. Li,
D. Pei,
A. J. Liang,
P. Dudin,
T. K. Kim,
C. Cacho,
Y. F. Xu,
Y. Sun,
L. X. Yang,
Z. K. Liu,
C. Felser,
S. S. P. Parkin,
Y. L. Chen
Abstract:
The spin-orbit coupling (SOC) lifts the band degeneracy that plays a vital role in the search for different topological states, such as topological insulators (TIs) and topological semimetals (TSMs). In TSMs, the SOC can partially gap a degenerate nodal line, leading to the formation of Dirac/Weyl semimetals (DSMs/WSMs). However, such SOC-induced gap structure along the nodal line in TSMs has not…
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The spin-orbit coupling (SOC) lifts the band degeneracy that plays a vital role in the search for different topological states, such as topological insulators (TIs) and topological semimetals (TSMs). In TSMs, the SOC can partially gap a degenerate nodal line, leading to the formation of Dirac/Weyl semimetals (DSMs/WSMs). However, such SOC-induced gap structure along the nodal line in TSMs has not yet been systematically investigated experimentally. Here, we report a direct observation of such gap structure in a magnetic WSM Co3Sn2S2 using high resolution angle-resolved photoemission spectroscopy. Our results not only reveal the existence and importance of the strong SOC effect in the formation of the WSM phase in Co3Sn2S2, but also provide insights for the understanding of its exotic physical properties.
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Submitted 14 March, 2021;
originally announced March 2021.
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Spectroscopic Signature for Local-moment Magnetism in van der Waals Ferromagnet Fe$_3$GeTe$_2$
Authors:
X. Xu,
Y. W. Li,
S. R. Duan,
S. L. Zhang,
Y. J. Chen,
L. Kang,
A. J. Liang,
C. Chen,
W. Xia,
Y. Xu,
P. Malinowski,
X. D. Xu,
J. -H. Chu,
G. Li,
Y. F. Guo,
Z. K. Liu,
L. X. Yang,
Y. L. Chen
Abstract:
The van der Waals ferromagnet Fe$_3$GeTe$_2$ has recently attracted extensive research attention due to its intertwined magnetic, electronic and topological properties. Here, using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the temperature evolution of the electronic structure of bulk Fe$_3$GeTe$_2$. We observe largely dispersive energy bands that are…
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The van der Waals ferromagnet Fe$_3$GeTe$_2$ has recently attracted extensive research attention due to its intertwined magnetic, electronic and topological properties. Here, using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the temperature evolution of the electronic structure of bulk Fe$_3$GeTe$_2$. We observe largely dispersive energy bands that are narrowed by a factor of 1.6 compared with ab-initio calculation. Upon heating towards the ferromagnetic transition near 225 K, we observe a massive reduction of quasiparticle coherence in a large energy range, which is attributed to the enhanced magnetic fluctuation in the system. Remarkably, the electron bands barely shift with increasing temperature, which deviates from the exchange splitting picture within the itinerant Stoner model. We argue that the local magnetic moments play a crucial role in the ferromagnetism of Fe$_3$GeTe$_2$, despite its strongly itinerant nature. Our results provide important insights into the electronic and magnetic properties of Fe$_3$GeTe$_2$ and shed light on the generic understanding of itinerant magnetism in correlated materials.
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Submitted 21 April, 2020;
originally announced April 2020.
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Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures
Authors:
Yong Hu,
Lixuan Xu,
Mengzhu Shi,
Aiyun Luo,
Shuting Peng,
Z. Y. Wang,
J. J. Ying,
T. Wu,
Z. K. Liu,
C. F. Zhang,
Y. L. Chen,
G. Xu,
X. -H. Chen,
J. -F. He
Abstract:
In the newly discovered magnetic topological insulator MnBi$_2$Te$_4$, both axion insulator state and quantized anomalous Hall effect (QAHE) have been observed by tuning the magnetic structure. The related (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures with increased tuning knobs, are predicted to be a more versatile platform for exotic topological states. Here, we report angle-resolved p…
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In the newly discovered magnetic topological insulator MnBi$_2$Te$_4$, both axion insulator state and quantized anomalous Hall effect (QAHE) have been observed by tuning the magnetic structure. The related (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures with increased tuning knobs, are predicted to be a more versatile platform for exotic topological states. Here, we report angle-resolved photoemission spectroscopy (ARPES) studies on a series of the heterostructures (MnBi$_2$Te$_4$, MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$). A universal gapless Dirac cone is observed at the MnBi$_2$Te$_4$ terminated (0001) surfaces in all systems. This is in sharp contrast to the expected gap from the original antiferromagnetic ground state, indicating an altered magnetic structure near the surface, possibly due to the surface termination. In the meantime, the electron band dispersion of the surface states, presumably dominated by the top surface, is found to be sensitive to different stackings of the underlying MnBi$_2$Te$_4$ and Bi$_2$Te$_3$ layers. Our results suggest the high tunability of both magnetic and electronic structures of the topological surface states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures, which is essential in realizing various novel topological states.
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Submitted 24 October, 2019;
originally announced October 2019.
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Persistent gapless surface states in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator
Authors:
L. X. Xu,
Y. H. Mao,
H. Y. Wang,
J. H. Li,
Y. J. Chen,
Y. Y. Y. Xia,
Y. W. Li,
J. Zhang,
H. J. Zheng,
K. Huang,
C. F. Zhang,
S. T. Cui,
A. J. Liang,
W. Xia,
H. Su,
S. W. Jung,
C. Cacho,
M. X. Wang,
G. Li,
Y. Xu,
Y. F. Guo,
L. X. Yang,
Z. K. Liu,
Y. L. Chen
Abstract:
Magnetic topological quantum materials (TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic (AFM) topological insulator MnBi2Te4 that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM co…
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Magnetic topological quantum materials (TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic (AFM) topological insulator MnBi2Te4 that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM compound MnBi4Te7 where Bi2Te3 and MnBi2Te4 layers alternate to form a superlattice. Using spatial- and angle-resolved photoemission spectroscopy, we identified ubiquitous (albeit termination dependent) topological electronic structures from both Bi2Te3 and MnBi2Te4 terminations. Unexpectedly, while the bulk bands show strong temperature dependence correlated with the AFM transition, the topological surface states show little temperature dependence and remain gapless across the AFM transition. The detailed electronic structure of MnBi4Te7 and its temperature evolution, together with the results of its sister compound MnBi2Te4, will not only help understand the exotic properties of this family of magnetic TQMs, but also guide the design for possible applications.
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Submitted 24 October, 2019;
originally announced October 2019.
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Magnetic Weyl Semimetal Phase in a Kagome Crystal
Authors:
D. F. Liu,
A. J. Liang,
E. K. Liu,
Q. N. Xu,
Y. W. Li,
C. Chen,
D. Pei,
W. J. Shi,
S. K. Mo,
P. Dudin,
T. Kim,
C. Cacho,
G. Li,
Y. Sun,
L. X. Yang,
Z. K. Liu,
S. S. P. Parkin,
C. Felser,
Y. L. Chen
Abstract:
Weyl semimetals are crystalline solids that host emergent relativistic Weyl fermions and have characteristic surface Fermi-arcs in their electronic structure. Weyl semimetals with broken time reversal symmetry are difficult to identify unambiguously. In this work, using angle-resolved photoemission spectroscopy, we visualized the electronic structure of the ferromagnetic crystal Co3Sn2S2 and disco…
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Weyl semimetals are crystalline solids that host emergent relativistic Weyl fermions and have characteristic surface Fermi-arcs in their electronic structure. Weyl semimetals with broken time reversal symmetry are difficult to identify unambiguously. In this work, using angle-resolved photoemission spectroscopy, we visualized the electronic structure of the ferromagnetic crystal Co3Sn2S2 and discovered its characteristic surface Fermi-arcs and linear bulk band dispersions across the Weyl points. These results establish Co3Sn2S2 as a magnetic Weyl semimetal that may serve as a platform for realizing phenomena such as chiral magnetic effects, unusually large anomalous Hall effect and quantum anomalous Hall effect.
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Submitted 20 September, 2019;
originally announced September 2019.
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Topological Lifshitz Transitions and Fermi Arc Manipulation in Weyl Semimetal NbAs
Authors:
H. F. Yang,
L. X. Yang,
Z. K. Liu,
Y. Sun,
C. Chen,
H. Peng,
M. Schmidt,
D. Prabhakaran,
B. A. Bernevig,
C. Felser,
B. H. Yan,
Y. L. Chen
Abstract:
Surface Fermi arcs (SFAs), the unique open Fermi-surfaces (FSs) discovered recently in topological Weyl semimetals (TWSs), are unlike closed FSs in conventional materials and can give rise to many exotic phenomena, such as anomalous SFA-mediated quantum oscillations, chiral magnetic effects, three-dimensional quantum Hall effect, non-local voltage generation and anomalous electromagnetic wave tran…
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Surface Fermi arcs (SFAs), the unique open Fermi-surfaces (FSs) discovered recently in topological Weyl semimetals (TWSs), are unlike closed FSs in conventional materials and can give rise to many exotic phenomena, such as anomalous SFA-mediated quantum oscillations, chiral magnetic effects, three-dimensional quantum Hall effect, non-local voltage generation and anomalous electromagnetic wave transmission. Here, by using in-situ surface decoration, we demonstrate successful manipulation of the shape, size and even the connections of SFAs in a model TWS, NbAs, and observe their evolution that leads to an unusual topological Lifshitz transition not caused by the change of the carrier concentration. The phase transition teleports the SFAs between different parts of the surface Brillouin zone. Despite the dramatic surface evolution, the existence of SFAs is robust and each SFA remains tied to a pair of Weyl points of opposite chirality, as dictated by the bulk topology.
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Submitted 3 August, 2019;
originally announced August 2019.
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Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4
Authors:
Y. J. Chen,
L. X. Xu,
J. H. Li,
Y. W. Li,
C. F. Zhang,
H. Li,
Y. Wu,
A. J. Liang,
C. Chen,
S. W. Jung,
C. Cacho,
H. Y. Wang,
Y. H. Mao,
S. Liu,
M. X. Wang,
Y. F. Guo,
Y. Xu,
Z. K. Liu,
L. X. Yang,
Y. L. Chen
Abstract:
Topological quantum materials coupled with magnetism can provide a platform for realizing rich exotic physical phenomena, including quantum anomalous Hall effect, axion electrodynamics and Majorana fermions. However, these unusual effects typically require extreme experimental conditions such as ultralow temperature or sophisticate material growth and fabrication. Recently, new intrinsic magnetic…
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Topological quantum materials coupled with magnetism can provide a platform for realizing rich exotic physical phenomena, including quantum anomalous Hall effect, axion electrodynamics and Majorana fermions. However, these unusual effects typically require extreme experimental conditions such as ultralow temperature or sophisticate material growth and fabrication. Recently, new intrinsic magnetic topological insulators were proposed in MnBi2Te4-family compounds - on which rich topological effects could be realized under much relaxed experimental conditions. However, despite the exciting progresses, the detailed electronic structures observed in this family of compounds remain controversial up to date. Here, combining the use of synchrotron and laser light sources, we carried out comprehensive and high resolution angle-resolved photoemission spectroscopy studies on MnBi2Te4, and clearly identified its topological electronic structures including the characteristic gapless topological surface states. In addition, the temperature evolution of the energy bands clearly reveals their interplay with the magnetic phase transition by showing interesting differences for the bulk and surface states, respectively. The identification of the detailed electronic structures of MnBi2Te4 will not only help understand its exotic properties, but also pave the way for the design and realization of novel phenomena and applications.
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Submitted 11 July, 2019;
originally announced July 2019.
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Photoemission Study of the Electronic Structure of Valence Band Convergent SnSe
Authors:
C. W. Wang,
Y. Y. Y. Xia,
Z. Tian,
J. Jiang,
B. H. Li,
S. T. Cui,
H. F. Yang,
A. J. Liang,
X. Y. Zhan,
G. H. Hong,
S. Liu,
C. Chen,
M. X. Wang,
L. X. Yang,
Z. Liu,
Q. X. Mi,
G. Li,
J. M. Xue,
Z. K. Liu,
Y. L. Chen
Abstract:
IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance.The multiple close-to-degenerate valence bands in the electronic band structure has been one of the key factors contributing to the high power factor and thus figure of merit in the SnSe single crystal. To date, there have been primarily theoretical calculations of this particular electronic band st…
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IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance.The multiple close-to-degenerate valence bands in the electronic band structure has been one of the key factors contributing to the high power factor and thus figure of merit in the SnSe single crystal. To date, there have been primarily theoretical calculations of this particular electronic band structure. In this paper, however, using angle-resolved photoemission spectroscopy, we perform a systematic investigation of the electronic structure of SnSe. We directly observe three predicted hole bands with small energy differences between their band tops and relatively small in-plane effective masses, in good agreement with the ab initio calculations and critical for the enhancement of the Seebeck coefficient while kee** high electrical conductivity. Our results reveal the complete band structure of SnSe and help to provide a deeper understanding of the electronic origin of the excellent thermoelectric performances in SnSe.
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Submitted 12 April, 2018;
originally announced April 2018.
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The topological surface state of $α$-Sn on InSb(001) as studied by photoemission
Authors:
M. R. Scholz,
V. A. Rogalev,
L. Dudy,
F. Reis,
F. Adler,
J. Aulbach,
L. J. Collins-McIntyre,
L. B. Duffy,
H. F. Yang,
Y. L. Chen,
T. Hesjedal,
Z. K. Liu,
M. Hoesch,
S. Muff,
J. H. Dil,
J. Schäfer,
R. Claessen
Abstract:
We report on the electronic structure of the elemental topological semimetal $α$-Sn on InSb(001). High-resolution angle-resolved photoemission data allow to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional $p$-type do** of the as-grown films was compensated by…
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We report on the electronic structure of the elemental topological semimetal $α$-Sn on InSb(001). High-resolution angle-resolved photoemission data allow to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional $p$-type do** of the as-grown films was compensated by deposition of potassium or tellurium after the growth, thereby shifting the Dirac point of the surface state below the Fermi level. We show that, while having the potential to break time-reversal symmetry, iron impurities with a coverage of up to 0.25 monolayers do not have any further impact on the surface state beyond that of K or Te. Furthermore, we have measured the spin-momentum locking of electrons from the TSS by means of spin-resolved photoemission. Our results show that the spin vector lies fully in-plane, but it also has a finite radial component. Finally, we analyze the decay of photoholes introduced in the photoemission process, and by this gain insight into the many-body interactions in the system. Surprisingly, we extract quasiparticle lifetimes comparable to other topological materials where the TSS is located within a bulk band gap. We argue that the main decay of photoholes is caused by intraband scattering, while scattering into bulk states is suppressed due to different orbital symmetries of bulk and surface states.
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Submitted 29 November, 2017;
originally announced November 2017.
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Dirac Line-nodes and Effect of Spin-orbit Coupling in Non-symmorphic Critical Semimetal MSiS (M=Hf, Zr)
Authors:
C. Chen,
X. Xu,
J. Jiang,
S. -C. Wu,
Y. P. Qi,
L. X. Yang,
M. X. Wang,
Y. Sun,
N. B. M. Schröter,
H. F. Yang,
L. M. Schoop,
Y. Y. Lv,
J. Zhou,
Y. B. Chen,
S. H. Yao,
M. H. Lu,
Y. F. Chen,
C. Felser,
B. H. Yan,
Z. K. Liu,
Y. L. Chen
Abstract:
Topological Dirac semimetals (TDSs) represent a new state of quantum matter recently discovered that offers a platform for realizing many exotic physical phenomena. A TDS is characterized by the linear touching of bulk (conduction and valance) bands at discrete points in the momentum space (i.e. 3D Dirac points), such as in Na3Bi and Cd3As2. More recently, new types of Dirac semimetals with robust…
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Topological Dirac semimetals (TDSs) represent a new state of quantum matter recently discovered that offers a platform for realizing many exotic physical phenomena. A TDS is characterized by the linear touching of bulk (conduction and valance) bands at discrete points in the momentum space (i.e. 3D Dirac points), such as in Na3Bi and Cd3As2. More recently, new types of Dirac semimetals with robust Dirac line-nodes (with non-trivial topology or near the critical point between topological phase transitions) have been proposed that extends the bulk linear touching from discrete points to 1D lines. In this work, using angle-resolved photoemission spectroscopy (ARPES), we explored the electronic structure of the non-symmorphic crystals MSiS (M=Hf, Zr). Remarkably, by map** out the band structure in the full 3D Brillouin Zone (BZ), we observed two sets of Dirac line-nodes in parallel with the kz-axis and their dispersions. Interestingly, along directions other than the line-nodes in the 3D BZ, the bulk degeneracy is lifted by spin-orbit coupling (SOC) in both compounds with larger magnitude in HfSiS. Our work not only experimentally confirms a new Dirac line-node semimetal family protected by non-symmorphic symmetry, but also helps understanding and further exploring the exotic properties as well as practical applications of the MSiS family of compounds.
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Submitted 26 January, 2017; v1 submitted 24 January, 2017;
originally announced January 2017.
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Observation of the Type-II Weyl Semimetal Phase in MoTe2
Authors:
J. Jiang,
Z. K. Liu,
Y. Sun,
H. F. Yang,
R. Rajamathi,
Y. P. Qi,
L. X. Yang,
C. Chen,
H. Peng,
C. -C. Hwang,
S. Z. Sun,
S. -K. Mo,
I. Vobornik,
J. Fujii,
S. S. P. Parkin,
C. Felser,
B. H. Yan,
Y. L. Chen
Abstract:
Topological Weyl semimetal (TWS), a new state of quantum matter, has sparked enormous research interest recently. Possessing unique Weyl fermions in the bulk and Fermi arcs on the surface, TWSs offer a rare platform for realizing many exotic physical phenomena. TWSs can be classified into type-I that respect Lorentz symmetry and type-II that do not. Here, we directly visualize the electronic struc…
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Topological Weyl semimetal (TWS), a new state of quantum matter, has sparked enormous research interest recently. Possessing unique Weyl fermions in the bulk and Fermi arcs on the surface, TWSs offer a rare platform for realizing many exotic physical phenomena. TWSs can be classified into type-I that respect Lorentz symmetry and type-II that do not. Here, we directly visualize the electronic structure of MoTe2, a recently proposed type-II TWS. Using angle-resolved photoemission spectroscopy (ARPES), we unravel the unique surface Fermi arcs, in good agreement with our ab-initio calculations. From spin-resolved ARPES measurements, we demonstrate the non-degenerate spin-texture of surface Fermi-arcs, thereby proving their non-trivial topological nature. Our work not only lead to new understandings of the unusual properties discovered in this family of compounds, but also allow for the further exploration of exotic properties and practical applications of type-II TWSs, as well as the interplay between superconductivity (MoTe2 was discovered to be superconducting recently) and their topological order.
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Submitted 1 April, 2016;
originally announced April 2016.
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Interfacial mode coupling as the origin of the enhancement of Tc in FeSe films on SrTiO3
Authors:
J. J. Lee,
F. T. Schmitt,
R. G. Moore,
S. Johnston,
Y. -T. Cui,
W. Li,
M. Yi,
Z. K. Liu,
M. Hashimoto,
Y. Zhang,
D. H. Lu,
T. P. Devereaux,
D. -H. Lee,
Z. -X. Shen
Abstract:
Single unit cell films of iron selenide (1UC FeSe) grown on SrTiO3 (STO) substrates have recently shown superconducting energy gaps opening at temperatures close to the boiling point of liquid nitrogen (77 K), a record for iron-based superconductors. Towards understanding why Cooper pairs form at such high temperatures, a primary question to address is the role, if any, of the STO substrate. Here,…
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Single unit cell films of iron selenide (1UC FeSe) grown on SrTiO3 (STO) substrates have recently shown superconducting energy gaps opening at temperatures close to the boiling point of liquid nitrogen (77 K), a record for iron-based superconductors. Towards understanding why Cooper pairs form at such high temperatures, a primary question to address is the role, if any, of the STO substrate. Here, we report high resolution angle resolved photoemission spectroscopy (ARPES) results which reveal an unexpected and unique characteristic of the 1UC FeSe/STO system: shake-off bands suggesting the presence of bosonic modes, most likely oxygen optical phonons in STO, which couple to the FeSe electrons with only small momentum transfer. Such coupling has the unusual benefit of hel** superconductivity in most channels, including those mediated by spin fluctuations. Our calculations suggest such coupling is responsible for raising the superconducting gap opening temperature in 1UC FeSe/STO. This discovery suggests a pathway to engineer high temperature superconductors.
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Submitted 11 May, 2015; v1 submitted 9 December, 2013;
originally announced December 2013.
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Discovery of a Three-dimensional Topological Dirac Semimetal, Na3Bi
Authors:
Z. K. Liu,
B. Zhou,
Z. J. Wang,
H. M. Weng,
D. Prabhakaran,
S. -K. Mo,
Y. Zhang,
Z. X. Shen,
Z. Fang,
X. Dai,
Z. Hussain,
Y. L. Chen
Abstract:
Three-dimensional (3D) topological Dirac semimetals (TDSs) represent a novel state of quantum matter that can be viewed as '3D graphene'. In contrast to two-dimensional (2D) Dirac fermions in graphene or on the surface of 3D topological insulators, TDSs possess 3D Dirac fermions in the bulk. The TDS is also an important boundary state mediating numerous novel quantum states, such as topological in…
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Three-dimensional (3D) topological Dirac semimetals (TDSs) represent a novel state of quantum matter that can be viewed as '3D graphene'. In contrast to two-dimensional (2D) Dirac fermions in graphene or on the surface of 3D topological insulators, TDSs possess 3D Dirac fermions in the bulk. The TDS is also an important boundary state mediating numerous novel quantum states, such as topological insulators, Weyl semi-metals, Axion insulators and topological superconductors. By investigating the electronic structure of Na3Bi with angle resolved photoemission spectroscopy, we discovered 3D Dirac fermions with linear dispersions along all momentum directions for the first time. Furthermore, we demonstrated that the 3D Dirac fermions in Na3Bi were protected by the bulk crystal symmetry. Our results establish that Na3Bi is the first model system of 3D TDSs, which can also serve as an ideal platform for the systematic study of quantum phase transitions between rich novel topological quantum states.
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Submitted 1 October, 2013;
originally announced October 2013.
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Large Gap Topological Insulator Bi2Te3 with a Single Dirac Cone on the Surface
Authors:
Y. L. Chen,
J. G. Analytis,
J. H. Chu,
Z. K. Liu,
S. K. Mo,
X. L. Qi,
H. J. Zhang,
D. H. Lu,
X. Dai,
Z. Fang,
S. C. Zhang,
I. R. Fisher,
Z. Hussain,
Z. X. Shen
Abstract:
We investigate the surface state of Bi$_2$Te$_3$ using angle resolved photoemission spectroscopy (ARPES) and transport measurements. By scanning over the entire Brillouin zone (BZ), we demonstrate that the surface state consists of a single non-degenerate Dirac cone centered at the $Γ$ point. Furthermore, with appropriate hole (Sn) do** to counteract intrinsic n-type do** from vacancy and an…
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We investigate the surface state of Bi$_2$Te$_3$ using angle resolved photoemission spectroscopy (ARPES) and transport measurements. By scanning over the entire Brillouin zone (BZ), we demonstrate that the surface state consists of a single non-degenerate Dirac cone centered at the $Γ$ point. Furthermore, with appropriate hole (Sn) do** to counteract intrinsic n-type do** from vacancy and anti-site defects, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states, consistent with a carrier sign change near this do** in transport properties. Our experimental results establish for the first time that Bi$_2$Te$_3$ is a three dimensional topological insulator with a single Dirac cone on the surface, as predicted by a recent theory.
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Submitted 11 April, 2009;
originally announced April 2009.
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A Finite-temperature First-principles Approach to Spin Fluctuation in BaFe_2As_2
Authors:
Y. Wang,
S. L. Shang,
L. Q. Chen,
Z. K. Liu
Abstract:
Thermodynamic flunctuations in BaFe2As2 is addressed with a first-principles formulation of the Helmholtz energy by accounting for the mixture of various electronic states each distinguished by different spin orientation distributions. We find that it is the spin exchange coupling in the inter-plane c direction that dictates the spin density wave ordering. We quantitatively predicted the pressur…
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Thermodynamic flunctuations in BaFe2As2 is addressed with a first-principles formulation of the Helmholtz energy by accounting for the mixture of various electronic states each distinguished by different spin orientation distributions. We find that it is the spin exchange coupling in the inter-plane c direction that dictates the spin density wave ordering. We quantitatively predicted the pressure dependence of the spin density wave ordering, the Schottky anomaly, and the temperature dependence of thermal populations of spin structures, all in agreement with available experimental data.
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Submitted 24 March, 2009;
originally announced March 2009.
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Mixed-State Dissipation in Zero Temperature Limit in $MgB_2$ Thin Films
Authors:
Y. Jia,
Y. Huang,
H. Yang,
L. Shan,
C. Ren,
C. G. Zhuang,
Y. Cui,
Qi Li,
Z. K. Liu,
X. X. Xi,
H. H. Wen
Abstract:
We have studied mixed-state dissipation in epitaxial MgB$_2$ thin films by measurements of resistive transition, current-voltage characteristics, Hall effect, and point-contact tunnelling spectrum. We found that unlike single gap superconductors with negligible vortex quantum fluctuations in which vortices are frozen at T=0 K, finite zero-temperature dissipation due to vortex motion exists in Mg…
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We have studied mixed-state dissipation in epitaxial MgB$_2$ thin films by measurements of resistive transition, current-voltage characteristics, Hall effect, and point-contact tunnelling spectrum. We found that unlike single gap superconductors with negligible vortex quantum fluctuations in which vortices are frozen at T=0 K, finite zero-temperature dissipation due to vortex motion exists in MgB$_2$ over a wide magnetic field range. This dissipation was found to be associated with proliferation of quasiparticles from the $π$-band of MgB$_2$. The result shows that the vortex fluctuations are enhanced by two-band superconductivity in MgB$_2$ and we suggest that the vortex quantum fluctuation is a possible cause of the non-vanishing zero-temperature dissipation.
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Submitted 23 March, 2007;
originally announced March 2007.
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Structural and transport properties of epitaxial NaxCoO2 thin films
Authors:
A. Venimadhav,
A. Soukiassian,
D. A. Tenne,
Qi Li,
X. X. Xi,
D. G. Schlom,
R. Arroyave,
Z. K. Liu,
H. P. Sun,
Xiaoqing Pan,
Minhyea Lee,
N. P. Ong
Abstract:
We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees from [10 1 0] sapphire. Different Na vapor pressures during the annealing resulted in films…
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We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees from [10 1 0] sapphire. Different Na vapor pressures during the annealing resulted in films with different Na concentrations, which showed distinct transport properties.
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Submitted 10 May, 2005;
originally announced May 2005.
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CVD-based approach to the growth of epitaxial MgB2 thin films
Authors:
A. V. Pogrebnyakov,
X. H. Zheng,
A. Kotcharov,
J. E. Jones,
X. X. Xi,
E. M. Lysczek,
J. Redwing,
S. Y. Xu,
Q. Li,
J. Lettiery,
D. G. Schlom,
J. Schallenberger,
Z. K. Liu,
W. Tian,
X. Q. Pan
Abstract:
The paper has been withdrawn
The paper has been withdrawn
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Submitted 9 April, 2002; v1 submitted 6 April, 2002;
originally announced April 2002.
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In situ epitaxial MgB2 thin films for superconducting electronics
Authors:
X. H. Zeng,
A. V. Pogrebnyakov,
A. Kotcharov,
J. E. Jones,
X. X. Xi,
E. M. Lysczek,
J. M. Redwing,
S. Y. Xu,
Qi Li,
J. Lettieri,
D. G. Schlom,
W. Tian,
X. Q. Pan,
Z. K. Liu
Abstract:
A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ}…
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A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ} growth of MgB$_2$ thin films. The films grow epitaxially on (0001) sapphire and (0001) 4H-SiC substrates and show a bulk-like $T_c$ of 39 K, a $J_c$(4.2K) of $1.2 \times 10^7$ A/cm$^2$ in zero field, and a $H_{c2}(0)$ of 29.2 T in parallel magnetic field. The surface is smooth with a root-mean-square roughness of 2.5 nm for MgB$_2$ films on SiC. This deposition method opens tremendous opportunities for superconducting electronics using MgB$_2$.
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Submitted 27 March, 2002;
originally announced March 2002.
