Observation of protected localized states induced by curved space in acoustic topological insulators
Authors:
H. W. Wu,
J. Q. Quan,
Y. K. Liu,
Y. Pan,
Z. Q. Sheng,
L. W. **g
Abstract:
Topological insulators (TIs) with robust boundary states against perturbations and disorders provide a unique approach for manipulating waves, whereas curved space can effectively control the wave propagation on curved surfaces by the geometric potential effect as well. In general, two-dimensional (2D) TIs are designed on a flat surface; however, in most practical cases, curved topological structu…
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Topological insulators (TIs) with robust boundary states against perturbations and disorders provide a unique approach for manipulating waves, whereas curved space can effectively control the wave propagation on curved surfaces by the geometric potential effect as well. In general, two-dimensional (2D) TIs are designed on a flat surface; however, in most practical cases, curved topological structures are required. In this study, we design a 2D curved acoustic TI by perforation on a curved rigid plate. We experimentally demonstrate that a topological localized state stands erect in the bulk gap, and the corresponding pressure distributions are confined at the position with the maximal curvature. Moreover, we experimentally verify the robustness of the topological localized state by introducing defects near the localized position. To understand the underlying mechanism of the topological localized state, a tight-binding model considering the geometric potential effect is proposed. The interaction between the geometrical curvature and topology in the system provides a novel scheme for manipulating and trap** wave propagation along the boundary of curved TIs, thereby offering potential applications in flexible devices.
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Submitted 9 January, 2021;
originally announced January 2021.
High-temperature Anomalous Hall Effect in Transition Metal Dichalcogenide-Ferromagnetic Insulator Heterostructure
Authors:
Sheung Mei Ng,
Hui Chao Wang,
Yu Kuai Liu,
Hon Fai Wong,
Hei Man Yau,
Chun Hung Suen,
Ze Han Wu,
Chi Wah Leung,
Ji Yan Dai
Abstract:
Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe2 thin film using heterostructure approach by depositing it on ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is demonstrated. In this hete…
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Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe2 thin film using heterostructure approach by depositing it on ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is demonstrated. In this heterostructure, significant anomalous Hall effect can be observed at temperatures up to at least 400 K, which is a record high temperature for the observation of AHE in TMDs, and the large RAHE is more than one order of magnitude larger than those previously reported value in topological insulators or TMDs based heterostructures. The magnetization of interfacial reaction-induced ZrO2 between YIG and ZrTe2 is believed to play a crucial role for the induced high-temperature anomalous Hall effect in the ZrTe2. These results reveal a promising system for the room-temperature spintronic device applications, and it may also open a new avenue toward introducing magnetism to TMDs and exploring the quantum AHE at higher temperatures considering the prediction of nontrivial topology in ZrTe2.
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Submitted 27 February, 2020;
originally announced February 2020.
