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Showing 1–8 of 8 results for author: Liu, H C

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  1. arXiv:2205.14479  [pdf, other

    cs.PL

    TinyIREE: An ML Execution Environment for Embedded Systems from Compilation to Deployment

    Authors: Hsin-I Cindy Liu, Marius Brehler, Mahesh Ravishankar, Nicolas Vasilache, Ben Vanik, Stella Laurenzo

    Abstract: Machine learning model deployment for training and execution has been an important topic for industry and academic research in the last decade. Much of the attention has been focused on develo** specific toolchains to support acceleration hardware. In this paper, we present IREE, a unified compiler and runtime stack with the explicit goal to scale down machine learning programs to the smallest f… ▽ More

    Submitted 28 May, 2022; originally announced May 2022.

    Comments: 9 pages, 3 figures, to be published in IEEE Micro

  2. arXiv:2106.01334  [pdf, other

    cond-mat.quant-gas physics.atom-ph quant-ph

    Overlap** Bose-Einstein Condensates of $^{23}$Na and $^{133}$Cs

    Authors: Claire Warner, Aden Z. Lam, Niccolò Bigagli, Henry C. Liu, Ian Stevenson, Sebastian Will

    Abstract: We report on the creation of dual-species Bose-Einstein condensates (BECs) of $^{23}$Na atoms and $^{133}$Cs atoms. We demonstrate sympathetic cooling of Cs with Na in a magnetic quadrupole trap and a crossed optical dipole trap, leading to Na BECs with $8 \times 10^5$ atoms and Cs BECs with $3.5 \times 10^4$ atoms. Investigating cross-thermalization and lifetimes of the mixture, we find that the… ▽ More

    Submitted 21 March, 2022; v1 submitted 2 June, 2021; originally announced June 2021.

    Comments: 10 pages, 7 figures

    Journal ref: Phys. Rev. A 104, 033302 (2021)

  3. arXiv:1703.04291  [pdf

    cond-mat.supr-con

    Reinforcement of interfacial superconductivity in a Bi2Te3/Fe1+yTe heterostructure under hydrostatic pressure

    Authors: Junying Shen, Claire Heuckeroth, Yuhang Deng, Qinglin He, Hong Chao Liu, **g Liang, Jiannong Wang, Iam Keong Sou, James S. Schilling, Rolf Lortz

    Abstract: We investigate the hydrostatic pressure dependence of interfacial superconductivity occurring at the atomically sharp interface between two non-superconducting materials: the topological insulator (TI) Bi2Te3 and the parent compound Fe1+yTe of the chalcogenide iron based superconductors. Under pressure, a significant increase in the superconducting transition temperature Tc is observed. We trace t… ▽ More

    Submitted 5 June, 2017; v1 submitted 13 March, 2017; originally announced March 2017.

  4. arXiv:1407.5875  [pdf

    cond-mat.supr-con

    Large gap, a pseudogap and proximity effect in the Bi2Te3/Fe1+yTe interfacial superconductor

    Authors: M. Q. He, Q. L. He, J. Y. Shen, H. C. Liu, Y. Zheng, C. H. Wong, Q. H. Chen, J. N. Wang, K. T. Law, I. K. Sou, A. P. Petrovic, R. Lortz

    Abstract: We report directional point-contact spectroscopy data on the novel Bi2Te3/Fe1+yTe interfacial superconductor for a Bi2Te3 thickness of 9 quintuple layers, bonded by van der Waals epitaxy to a Fe1+yTe film at an atomically sharp interface. Our data show a very large superconducting twin-gap structure with an energy scale exceeding that of bulk FeSe or FeSe1-xTex by a factor of 4. While the larger g… ▽ More

    Submitted 29 October, 2014; v1 submitted 22 July, 2014; originally announced July 2014.

  5. arXiv:1201.4189  [pdf, ps, other

    cond-mat.mes-hall

    A phonon scattering assisted injection and extraction based terahertz quantum cascade laser

    Authors: E. Dupont, S. Fathololoumi, Z. R. Wasilewski, G. Aers, S. R. Laframboise, M. Lindskog, A. Wacker, D. Ban, H. C. Liu

    Abstract: A novel lasing scheme for terahertz quantum cascade lasers, based on consecutive phonon-photon-phonon emissions per module, is proposed and experimentally demonstrated. The charge transport of the proposed structure is modeled using a rate equation formalism. An optimization code based on a genetic algorithm was developed to find a four-well design in the $\mathrm{GaAs/Al_{0.25}Ga_{0.75}As}$ mater… ▽ More

    Submitted 19 January, 2012; originally announced January 2012.

    Comments: 11 pages, 10 figures

  6. arXiv:1008.1878  [pdf, ps, other

    physics.data-an math.HO

    Bertrand's paradox: a physical solution

    Authors: P. Di Porto, B. Crosignani, A. Ciattoni, H. C. Liu

    Abstract: We present a conclusive answer to Bertrand's paradox, a long standing open issue in the basic physical interpretation of probability. The paradox deals with the existence of mutually inconsistent results when looking for the probability that a chord, drawn at random in a circle, is longer than the side of an inscribed equilateral triangle. We obtain a unique solution by substituting chord drawing… ▽ More

    Submitted 11 August, 2010; originally announced August 2010.

    Comments: 3 pages, 3 figures

  7. arXiv:0903.4385  [pdf, other

    physics.optics

    Stable mode-locked pulses from mid-infrared semiconductor lasers

    Authors: Christine Y. Wang, L. Kuznetsova, V. M. Gkortsas, L. Diehl, F. X. Kaertner, M. A. Belkin, A. Belyanin, X. Li, D. Ham, H Schneider, P. Grant, C. Y. Song, S. Haffouz, Z. R. Wasilewski, H. C. Liu, Federico Capasso

    Abstract: We report the unequivocal demonstration of mid-infrared mode-locked pulses from a semiconductor laser. The train of short pulses was generated by actively modulating the current and hence the optical gain in a small section of an edge-emitting quantum cascade laser (QCL). Pulses with pulse duration at full-width-at-half-maximum of about 3 ps and energy of 0.5 pJ were characterized using a second… ▽ More

    Submitted 25 March, 2009; originally announced March 2009.

    Comments: 26 pages, 4 figures

    Journal ref: Optics Express, Vol. 17, Issue 15, pp. 12929-12943 (2009)

  8. arXiv:cond-mat/9806145  [pdf, ps, other

    cond-mat.mes-hall

    Negative capacitance effect in semiconductor devices

    Authors: M. Ershov, H. C. Liu, L. Li, M. Buchanan, Z. R. Wasilewski, A. K. Jonscher

    Abstract: Nontrivial capacitance behavior, including a negative capacitance (NC) effect, observed in a variety of semiconductor devices, is discussed emphasizing the physical mechanism and the theoretical interpretation of experimental data. The correct interpretation of NC can be based on the analysis of the time-domain transient current in response to a small voltage step or impulse, involving a self-co… ▽ More

    Submitted 11 June, 1998; originally announced June 1998.

    Comments: 9 pages, Latex, 11 ps figures; to be published in IEEE Trans. on Electron Devices