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Crown ether decorated silicon photonics for safeguarding against lead poisoning
Authors:
Luigi Ranno,
Yong Zen Tan,
Chi Siang Ong,
Xin Guo,
Khong Nee Koo,
Xiang Li,
Wanjun Wang,
Samuel Serna,
Chongyang Liu,
Rusli,
Callum G. Littlejohns,
Graham T. Reed,
Juejun Hu,
Hong Wang,
Jia Xu Brian Sia
Abstract:
Lead (Pb2+) toxification in society is one of the most concerning public health crisis that remains unaddressed. The exposure to Pb2+ poisoning leads to a multitude of enduring health issues, even at the part-per-billion scale (ppb). Yet, public action dwarfs its impact. Pb2+ poisoning is estimated to account for 1 million deaths per year globally, which is in addition to its chronic impact on chi…
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Lead (Pb2+) toxification in society is one of the most concerning public health crisis that remains unaddressed. The exposure to Pb2+ poisoning leads to a multitude of enduring health issues, even at the part-per-billion scale (ppb). Yet, public action dwarfs its impact. Pb2+ poisoning is estimated to account for 1 million deaths per year globally, which is in addition to its chronic impact on children. With their ring-shaped cavities, crown ethers are uniquely capable of selectively binding to specific ions. In this work, for the first time, the synergistic integration of highly-scalable silicon photonics, with crown ether amine conjugation via Fischer esterification in an environmentally-friendly fashion is demonstrated. This realises a photonic platform that enables the in-situ, highly-selective and quantitative detection of various ions. The development dispels the existing notion that Fischer esterification is restricted to organic compounds, laying the ground for subsequent amine conjugation for various crown ethers. In this work, the platform is engineered for Pb2+ detection, demonstrating a large dynamic detection range of 1 - 262000 ppb with high selectivity against a wide range of relevant ions. These results indicate the potential for the pervasive implementation of the technology to safeguard against ubiquitous lead poisoning in our society.
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Submitted 31 October, 2023;
originally announced November 2023.
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High speed silicon photonic electro-optic Kerr modulation
Authors:
Jonathan Peltier,
Weiwei Zhang,
Leopold Virot,
Christian Lafforgue,
Lucas Deniel,
Delphine Marris-Morini,
Guy Aubin,
Farah Amar,
Denh Tran,
Xingzhao Yan,
Callum G. Littlejohns,
Carlos Alonso-Ramos,
David J. Thomson,
Graham Reed,
Laurent Vivien
Abstract:
Electro-optic silicon-based modulators contribute to ease the integration of high-speed and low-power consumption circuits for classical optical communications or quantum computers. However, the inversion symmetry in the silicon crystal structure inhibits the use of Pockels effect. An electric field-induced optical modulation equivalent to a Pockels effect can nevertheless be achieved in silicon b…
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Electro-optic silicon-based modulators contribute to ease the integration of high-speed and low-power consumption circuits for classical optical communications or quantum computers. However, the inversion symmetry in the silicon crystal structure inhibits the use of Pockels effect. An electric field-induced optical modulation equivalent to a Pockels effect can nevertheless be achieved in silicon by the use of DC Kerr effect. Although some theoretical and experimental studies have shown its existence in silicon, the DC Kerr effect in optical modulation have led to a negligible contribution so far. This paper reports demonstration of high-speed optical modulation based on the electric field-induced linear electro-optic effect in silicon PIN junction waveguides. The relative contributions of both plasma dispersion and Kerr effects are quantified and we show that the Kerr induced modulation is dominant when a high external DC electric field is applied. Finally, the high-speed modulation response is analyzed and eye diagram up to 100 Gbits/s in NRZ format are obtained. This work demonstrates high speed modulation based on Kerr effect in silicon, and its potential for low loss, quasi-pure phase modulation.
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Submitted 27 February, 2023;
originally announced February 2023.
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Linear Optical Modulators for Prospective Communications at the 2 μm Waveband
Authors:
Jia Xu Brian Sia,
Xiang Li,
X. Guo,
Jiawei Wang,
Wanjun Wang,
Zhongliang Qiao,
Callum G. Littlejohns,
Chongyang Liu,
Kian Siong Ang,
Graham T. Reed,
Hong Wang
Abstract:
The 2 μm waveband is an area that could have significant technological consequences, with applications ranging from spectroscopy, LIDAR and free-space communications. The development of the thulium-doped fiber amplifier, hollow-core photonic bandgap fiber and 2 μm GaSb-based diode lasers has highlighted the ability of the waveband in alleviating the fiber capacity crisis in the incumbent communica…
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The 2 μm waveband is an area that could have significant technological consequences, with applications ranging from spectroscopy, LIDAR and free-space communications. The development of the thulium-doped fiber amplifier, hollow-core photonic bandgap fiber and 2 μm GaSb-based diode lasers has highlighted the ability of the waveband in alleviating the fiber capacity crisis in the incumbent communication infrastructure. The above has initiated vibrant development in the silicon photonic-space at 2 μm, where the area is capable of enabling highly-integrated photonic circuits, and potentially at low-cost and high-volumes. However, as of now, modulator linearity at 2 μm has not been addressed. The metric, as characterized by spurious free dynamic range is imperative for numerous applications such as RF photonic links for 5G and digital analog transmission in coherent communications. The development of linear optical modulators will be crucial in bringing these applications to the 2 μm. In view of that, this work is the first to address modulator linearity at the 2 μm, where the ring-assisted Mach-Zehnder modulator is developed, indicating spurious free dynamic range as high as 95 dB.Hz^2/3. It is found that that modulator spurious free dynamic range has a strong dependence on modulator bias voltage where it impacts the linearity of the transfer function in which the input RF signal is applied upon. The demonstrated modulator indicates favorable performance within silicon photonic modulators developed at 2 μm with bandwidth exceeding 17.5 GHz and modulation efficiency ranging from 0.70 to 1.25 V.cm.
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Submitted 8 October, 2022;
originally announced October 2022.
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Suspended silicon waveguides for long-wave infrared wavelengths
Authors:
J. Soler Penadés,
A. Sánchez-Postigo,
M. Nedeljkovic,
A. Ortega-Moñux,
J. G. Wangüemert-Pérez,
Y. Xu,
R. Halir,
Z. Qu,
A. Z. Khokhar,
A. Osman,
W. Cao,
C. G. Littlejohns,
P. Cheben,
I. Molina-Fernández,
G. Z. Mashanovich
Abstract:
In this paper we report suspended silicon waveguides operating at a wavelength of 7.67 mm with a propagation loss of 3.1 ? 0.3 dB/cm. To our knowledge this is the first demonstration of low loss silicon waveguides at such a long wavelength, with loss comparable to other platforms that use more exotic materials. The suspended Si waveguide core is supported by a subwavelength grating that provides l…
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In this paper we report suspended silicon waveguides operating at a wavelength of 7.67 mm with a propagation loss of 3.1 ? 0.3 dB/cm. To our knowledge this is the first demonstration of low loss silicon waveguides at such a long wavelength, with loss comparable to other platforms that use more exotic materials. The suspended Si waveguide core is supported by a subwavelength grating that provides lateral optical confinement, while also allowing access to the buried oxide layer so that it can be wet etched using hydrofluoric acid. We also demonstrate low loss waveguide bends and s-bends.
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Submitted 19 December, 2017; v1 submitted 9 November, 2017;
originally announced November 2017.
