Showing 1–2 of 2 results for author: Litombe, N
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Insulator to Metal Transition in WO$_3$ Induced by Electrolyte Gating
Authors:
X. Leng,
J. Pereiro,
J. Strle,
G. Dubuis,
A. T. Bollinger,
A. Gozar,
J. Wu,
N. Litombe,
C. Panagopoulos,
D. Pavuna,
I. Božović
Abstract:
Tungsten oxide and its associated bronzes (compounds of tungsten oxide and an alkali metal) are well known for their interesting optical and electrical characteristics. We have modified the transport properties of thin WO$_3$ films by electrolyte gating using both ionic liquids and polymer electrolytes. We are able to tune the resistivity of the gated film by more than five orders of magnitude, an…
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Tungsten oxide and its associated bronzes (compounds of tungsten oxide and an alkali metal) are well known for their interesting optical and electrical characteristics. We have modified the transport properties of thin WO$_3$ films by electrolyte gating using both ionic liquids and polymer electrolytes. We are able to tune the resistivity of the gated film by more than five orders of magnitude, and a clear insulator-to-metal transition is observed. To clarify the do** mechanism, we have performed a series of incisive operando experiments, ruling out both a purely electronic effect (charge accumulation near the interface) and oxygen-related mechanisms. We propose instead that hydrogen intercalation is responsible for do** WO$_3$ into a highly conductive ground state and provide evidence that it can be described as a dense polaronic gas.
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Submitted 18 July, 2017;
originally announced July 2017.
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Optical Nanoscopy of High-Tc Cuprate Nano-Constriction Devices Patterned by Helium Ion Beams
Authors:
Adrian Gozar,
Nicholas E. Litombe,
Jennifer E. Hoffman,
Ivan Bozovic
Abstract:
Helium-ion beams (HIB) focused to sub-nanometer scales have emerged as powerful tools for high-resolution imaging as well as nano-scale lithography, ion milling or deposition. Quantifying irradiation effects is essential for reliable device fabrication but most of the depth profiling information is provided by computer simulations rather than experiment. Here, we use atomic force microscopy (AFM)…
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Helium-ion beams (HIB) focused to sub-nanometer scales have emerged as powerful tools for high-resolution imaging as well as nano-scale lithography, ion milling or deposition. Quantifying irradiation effects is essential for reliable device fabrication but most of the depth profiling information is provided by computer simulations rather than experiment. Here, we use atomic force microscopy (AFM) combined with scanning near-field optical microscopy (SNOM) to provide three-dimensional (3D) dielectric characterization of high-temperature superconductor devices fabricated by HIB. By imaging the infrared dielectric response we find that amorphization caused by the nominally 0.5 nm HIB extends throughout the entire 26.5 nm thickness of the cuprate film and by about 500 nm laterally. This unexpectedly widespread structural and electronic damage can be attributed to a Helium depth distribution substantially modified by internal device interfaces. Our study introduces AFM-SNOM as a quantitative nano-scale tomographic technique for non-invasive 3D characterization of irradiation damage in a wide variety of devices.
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Submitted 6 March, 2017;
originally announced March 2017.
