Showing 1–7 of 7 results for author: List-Kratochvil, E

Strong coupling of monolayer WS2 excitons and surface plasmon polaritons in a planar Ag/WS2 hybrid structure

Authors: Nicolas Zorn Morales, Daniel Steffen Rühl, Sergey Sadofev, Giovanni Ligorio, Emil List-Kratochvil, Günter Kewes, Sylke Blumstengel

Abstract: Monolayer (1L) transition metal dichalcogenides (TMDC) are of strong interest in nanophotonics due to their narrow-band intense excitonic transitions persisting up to room temperature. When brought into resonance with surface plasmon polariton (SPP) excitations of a conductive medium opportunities for studying and engineering strong light-matter coupling arise. Here, we consider a most simple geom… ▽ More Monolayer (1L) transition metal dichalcogenides (TMDC) are of strong interest in nanophotonics due to their narrow-band intense excitonic transitions persisting up to room temperature. When brought into resonance with surface plasmon polariton (SPP) excitations of a conductive medium opportunities for studying and engineering strong light-matter coupling arise. Here, we consider a most simple geometry, namely a planar stack composed of a thin silver film, an Al2O3 spacer and a monolayer of WS2. We perform total internal reflection ellipsometry which combines spectroscopic ellipsometry with the Kretschmann-Raether-type surface plasmon resonance configuration. The combined amplitude and phase response of the reflected light at varied angle of incidence proves that despite the atomic thinness of 1L-WS2, the strong coupling (SC) regime between A excitons and SPPs propagating in the thin Ag film is reached. The phasor representation of rho corroborates SC as rho undergoes a topology change indicated by the occurrence of a double point at the cross over from the weak to the strong coupling regime. Our findings are validated by both analytical transfer matrix method calculations and numerical Maxwell simulations. The findings open up new perspectives for applications in plasmonic modulators and sensors benefitting from the tunability of the optical properties of 1L-TMDCs by electric fields, electrostatic do**, light and the chemical environment. △ Less

Submitted 28 June, 2023; originally announced June 2023.

Comments: 15 pages, 3 figures

Vortex dynamics in the two-dimensional BCS-BEC crossover

Authors: Max Heyl, Kyosuke Adachi, Yuki M. Itahashi, Yuji Nakagawa, Yuichi Kasahara, Emil J. W. List-Kratochvil, Yusuke Kato, Yoshihiro Iwasa

Abstract: The Bardeen-Cooper-Schrieffer (BCS) condensation and Bose-Einstein condensation (BEC) are the two limiting ground states of paired Fermion systems, and the crossover between these two limits has been a source of excitement for both fields of high temperature superconductivity and cold atom superfluidity. For superconductors, ultra-low do** systems like graphene and LixZrNCl successfully approach… ▽ More The Bardeen-Cooper-Schrieffer (BCS) condensation and Bose-Einstein condensation (BEC) are the two limiting ground states of paired Fermion systems, and the crossover between these two limits has been a source of excitement for both fields of high temperature superconductivity and cold atom superfluidity. For superconductors, ultra-low do** systems like graphene and LixZrNCl successfully approached the crossover starting from the BCS-side. These superconductors offer new opportunities to clarify the nature of charged-particles transport towards the BEC regime. Here we report the study of vortex dynamics within the crossover using their Hall effect as a probe in LixZrNCl. We observed a systematic enhancement of the Hall angle towards the BCS-BEC crossover, which was qualitatively reproduced by the phenomenological time-dependent Ginzburg-Landau (TDGL) theory. LixZrNCl exhibits a band structure free from various electronic instabilities, allowing us to achieve a comprehensive understanding of the vortex Hall effect and thereby propose a global picture of vortex dynamics within the crossover. These results demonstrate that gate-controlled superconductors are ideal platforms towards investigations of unexplored properties in BEC superconductors. △ Less

Submitted 11 September, 2022; originally announced September 2022.

Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors

Authors: Somayeh Saadat Niavol, Melanie Budde, Alexandra Papadogianni, Martin Heilmann, Hossain Milani Moghaddam, Celso M. Aldao, Giovanni Ligorio, Emil J. W. List-Kratochvil, Joao Marcelo J. Lopes, Nicolae Barsan, Oliver Bierwagen, Federico Schipani

Abstract: Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in environmental pollution monitoring can be realized with graphene-based materials. Here we show that, single layer graphene grown on SiC can be utilized to implement sensor devices being extremely sensitive towards NO2 showing an n-type response. A second type of sensor with an added NiO layer on top of the… ▽ More Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in environmental pollution monitoring can be realized with graphene-based materials. Here we show that, single layer graphene grown on SiC can be utilized to implement sensor devices being extremely sensitive towards NO2 showing an n-type response. A second type of sensor with an added NiO layer on top of the single layer graphene changed its response to p-type but did not reduce its sensitivity. We show that the conduction switch from n-type to p-type was not a consequence of an alteration of the graphene layer but is found to be an effect of the NiO layer. We find that the NiO leads to lowering of the Fermi level to a point that a crossing of the Dirac Point in the graphene switched the conduction type. These sensors were tested in the 100 ppb NO2 regime, showing good response and a detection limit extrapolated to be below 1 ppb. This new NiO/graphene/SiC configuration can be an attractive p-type sub-ppb sensor platform for NO2 and related gases. △ Less

Submitted 6 October, 2020; originally announced October 2020.

Monotonic and cyclic mechanical reliability of metallization lines on polymer substrates

Authors: Oleksandr Glushko, Andreas Klug, Emil J. W. List-Kratochvil, Megan J. Cordill

Abstract: Mechanical stability of Ag and Cu printed and evaporated metallization lines on polymer substrates is investigated by means of monotonic tensile and cyclic bending tests. It is shown that lines which demonstrate good performance during monotonic tests fail at lower strains during a cyclic bending tests. Evaporated lines with the grain size of several hundreds of nanometers have good ductility and… ▽ More Mechanical stability of Ag and Cu printed and evaporated metallization lines on polymer substrates is investigated by means of monotonic tensile and cyclic bending tests. It is shown that lines which demonstrate good performance during monotonic tests fail at lower strains during a cyclic bending tests. Evaporated lines with the grain size of several hundreds of nanometers have good ductility and consequently good stability during monotonic loading but at the same time they fail at low strains during cyclic bending. Printed lines with nanocrystalline microstructure, in contrast, demonstrate more intensive cracking during monotonic loading but higher failure strains during cyclic bending. Apart from the grain size effect, the effect of film thickness on the saturation crack density after cyclic bending is also demonstrated. Thinner films have higher crack density in accordance with the shear lag model. △ Less

Submitted 9 April, 2019; originally announced April 2019.

Journal ref: Journal of Materials Research, 32(9), 1760-1769 (2017)

Dynamically switching the surface electronic and electrostatic properties of indium tin oxide electrodes with photochromic monolayers

Authors: Qiankun Wang, Valentin Diez-Cabanes, Simone Dell'Elce, Andrea Liscio, Björn Kobin, Hong Li, Jean-Luc Brédas, Stefan Hecht, Vincenzo Palermo, Emil J. W. List-Kratochvil, Jérôme Cornil, Norbert Koch, Giovanni Ligorio

Abstract: The chemical modification of electrodes with organic materials is a common approach to tune the electronic and electrostatic landscape between interlayers in optoelectronic devices, thus facilitating charge injection at the electrode/semiconductor interfaces and improving their performance. The use of photochromic molecules for the surface modification allows dynamic control of the electronic and… ▽ More The chemical modification of electrodes with organic materials is a common approach to tune the electronic and electrostatic landscape between interlayers in optoelectronic devices, thus facilitating charge injection at the electrode/semiconductor interfaces and improving their performance. The use of photochromic molecules for the surface modification allows dynamic control of the electronic and electrostatic properties of the electrode and thereby enables additional functionalities in such devices. Here, we show that the electronic properties of a transparent indium tin oxide (ITO) electrode are reversibly and dynamically modified by depositing organic photochromic switches (diarylethenes) in the form of self-assembled monolayers (SAMs). By combining a range of surface characterization and density functional theory calculations, we present a detailed picture of the SAM binding onto ITO, the packing density of molecules, their orientation, as well as the work function modification of the ITO surface due to the SAM deposition. Upon illumination with ultraviolet and green light, we observe a reversible shift of the frontier occupied levels by 0.7 eV, and concomitantly a reversible work function change of ca. 60 meV. Our results prove the viability of dynamic switching of the electronic properties of the electrode with external light stimuli, which could be used to fabricate ITO-based photo-switchable optoelectronic devices. △ Less

Submitted 30 November, 2018; originally announced November 2018.

Pulsed thermal deposition of binary and ternary transition metal dichalcogenide monolayers and heterostructures

Authors: Niklas Mutz, Tino Meisel, Holm Kirmse, Soohyung Park, Nikolai Severin, Jürgen P. Rabe, Emil List-Kratochvil, Norbert Koch, Christoph Koch, Sylke Blumstengel, Sergey Sadofev

Abstract: Application of transition metal dichalcogenides (TMDC) in photonic, optoelectronic or valleytronic devices requires the growth of continuous monolayers, heterostructures and alloys of different materials in a single process. We present a facile pulsed thermal deposition method which provides precise control over layer thickness and stoichiometry of two-dimensional systems. The versatility of the m… ▽ More Application of transition metal dichalcogenides (TMDC) in photonic, optoelectronic or valleytronic devices requires the growth of continuous monolayers, heterostructures and alloys of different materials in a single process. We present a facile pulsed thermal deposition method which provides precise control over layer thickness and stoichiometry of two-dimensional systems. The versatility of the method is demonstrated on ternary monolayers of Mo$_{1-x}$W$_{x}$S$_{2}$ and on heterostructures combining metallic TaS$_{2}$ and semiconducting MoS$_{2}$ layers. The fabricated ternary monolayers cover the entire composition range of $x$ = 0...1 without phase separation. Band gap engineering and control over the spin-orbit coupling strength is demonstrated by absorption and photoluminescence spectroscopy. Vertical heterostructures are grown without intermixing. The formation of clean and atomically abrupt interfaces is evidenced by high-resolution transmission electron microscopy. Since both the metal components as well as the chalcogenides are thermally evaporated complex alloys and heterostructures can thus be prepared. △ Less

Submitted 11 February, 2019; v1 submitted 19 November, 2018; originally announced November 2018.

Simultaneous Extraction of Charge Density Dependent Mobility and Variable Contact Resistance from Thin Film Transistors

Authors: Riccardo Di Pietro, Deepak Venkateshvaran, Andreas Klug, Emil J. W. List-Kratochvil, Antonio Facchetti, Henning Sirringhaus, Dieter Neher

Abstract: A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determin… ▽ More A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of both contact and channel resistance from the analysis of the current voltage characteristics of a single device, with no a-priori assumption on the two parameters. It solves the inconsistencies in the commonly accepted mobility extraction methods and provides new possibilities for the analysis of the injection and transport processes in semiconducting materials. △ Less

Submitted 21 February, 2014; originally announced February 2014.

Comments: Submitted to Applied Physics Letters