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Electron Transport across Vertical Silicon / MoS${_2}$ / Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene-Base Hot Electron Transistors
Authors:
Melkamu Belete,
Olof Engström,
Sam Vaziri,
Gunther Lippert,
Mindaugas Lukosius,
Satender Kataria,
Max C. Lemme
Abstract:
Heterostructures comprising of silicon (Si), molybdenum disulfide (MoS${_2}$) and graphene are investigated with respect to the vertical current conduction mechanism. The measured current-voltage (I-V) characteristics exhibit temperature dependent asymmetric current, indicating thermally activated charge carrier transport. The data is compared and fitted to a current transport model that confirms…
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Heterostructures comprising of silicon (Si), molybdenum disulfide (MoS${_2}$) and graphene are investigated with respect to the vertical current conduction mechanism. The measured current-voltage (I-V) characteristics exhibit temperature dependent asymmetric current, indicating thermally activated charge carrier transport. The data is compared and fitted to a current transport model that confirms thermionic emission as the responsible transport mechanism across the devices. Theoretical calculations in combination with the experimental data suggest that the heterojunction barrier from Si to MoS${_2}$ is linearly temperature dependent for T = 200 to 300 K with a positive temperature coefficient. The temperature dependence may be attributed to a change in band gap difference between Si and MoS${_2}$, strain at the Si/MoS${_2}$ interface or different electron effective masses in Si and MoS${_2}$, leading to a possible entropy change stemming from variation in density of states as electrons move from Si to MoS${_2}$. The low barrier formed between Si and MoS${_2}$ and the resultant thermionic emission demonstrated here makes the present devices potential candidates as the emitter diode of graphene-base hot electron transistors for future high-speed electronics.
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Submitted 23 December, 2019;
originally announced December 2019.
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Plasma-enhanced chemical vapor deposition of amorphous Si on graphene
Authors:
G. Lupina,
C. Strobel,
J. Dabrowski,
G. Lippert,
J. Kitzmann,
H. M. Krause,
Ch. Wenger,
M. Lukosius,
A. Wolff,
M. Albert,
J. W. Bartha
Abstract:
Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide conformal coating of graphene with Si layers as thin as 20 nm without any additional seed layer. The RF plasma process results in amorphization of the graphene l…
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Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide conformal coating of graphene with Si layers as thin as 20 nm without any additional seed layer. The RF plasma process results in amorphization of the graphene layer. In contrast, the VHF process keeps the high crystalline quality of the graphene layer almost intact. Correlation analysis of Raman 2D and G band positions indicates that Si deposition induces reduction of the initial do** in graphene and an increase of compressive strain. Upon rapid thermal annealing the amorphous Si layer undergoes dehydrogenation and transformation into a polycrystalline film whereby a high crystalline quality of graphene is preserved.
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Submitted 17 May, 2016;
originally announced May 2016.
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Direct growth of low-doped graphene on Ge/Si(001) surfaces
Authors:
J. Dabrowski,
G. Lippert,
J. Avila,
J. Baringhaus,
I. Colambo,
Yu. S. Dedkov,
F. Herziger,
G. Lupina,
J. Maultzsch,
T. Schaffus,
T. Schroeder,
M. Sowinska,
C. Tegenkamp,
D. Vignaud,
M. -C. Asensio
Abstract:
The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD an…
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The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C$_2$H$_4$) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive map** of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by $30^\circ$ with respect to each other. The growth mode is attributed to the mechanism when small graphene "molecules" nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process.
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Submitted 8 April, 2016;
originally announced April 2016.
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Going Ballistic: Graphene Hot Electron Transistors
Authors:
Sam Vaziri,
Anderson D. Smith,
Mikael Östling,
Grzegorz Lupina,
Jarek Dabrowski,
Gunther Lippert,
Francesco Driussi,
Stefano Venica,
Valerio Di Lecce,
Antonio Gnudi,
Matthias König,
Günther Ruhl,
Melkamu Belete,
Max C. Lemme
Abstract:
This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly d…
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This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.
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Submitted 3 September, 2015;
originally announced September 2015.
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Graphene Grown on Ge(001) from Atomic Source
Authors:
Gunther Lippert,
Jarek Dabrowski,
Thomas Schroeder,
Yuji Yamamoto,
Felix Herziger,
Janina Maultzsch,
Jens Baringhaus,
Christoph Tegenkamp,
Maria Carmen Asensio,
Jose Avila,
Grzegorz Lupina
Abstract:
Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001) layers on Si(001) wafers can be uniformly covered with graphene at temperatures between 800°C and the melting temperature of Ge. The graphene is closed, with s…
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Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001) layers on Si(001) wafers can be uniformly covered with graphene at temperatures between 800°C and the melting temperature of Ge. The graphene is closed, with sheet resistivity strongly decreasing with growth temperature, weakly decreasing with the amount of deposited C, and reaching down to 2 kOhm/sq. Activation energy of surface roughness is low (about 0.66 eV) and constant throughout the range of temperatures in which graphene is formed. Density functional theory calculations indicate that the major physical processes affecting the growth are: (1) substitution of Ge in surface dimers by C, (2) interaction between C clusters and Ge monomers, and (3) formation of chemical bonds between graphene edge and Ge(001), and that the processes 1 and 2 are surpassed by CH$_{2}$ surface diffusion when the C atoms are delivered from CH$_{4}$. The results of this study indicate that graphene can be produced directly at the active region of the transistor in a process compatible with the Si technology.
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Submitted 19 December, 2013;
originally announced December 2013.
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A Graphene-based Hot Electron Transistor
Authors:
Sam Vaziri,
Grzegorz Lupina,
Christoph Henkel,
Anderson D. Smith,
Mikael Östling,
Jarek Dabrowski,
Gunther Lippert,
Wolfgang Mehr,
Max C. Lemme
Abstract:
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. T…
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We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 50.000.
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Submitted 2 June, 2013; v1 submitted 13 November, 2012;
originally announced November 2012.
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Molecular beam growth of graphene on mica
Authors:
Gunther Lippert,
Jarek Dabrowski,
Yuji Yamamoto,
Felix Herziger,
Janina Maultzsch,
Max C. Lemme,
Wolfgang Mehr,
Grzegorz Lupina
Abstract:
We demonstrate molecular beam growth of graphene on biotite mica substrates at temperatures below 1000°C. As indicated by optical and atomic force microscopy, evaporation of carbon from a high purity solid-state source onto biotite surface results in the formation of single-, bi-, and multilayer graphene with size in the micrometer regime. Graphene grown directly on mica surface is of very high cr…
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We demonstrate molecular beam growth of graphene on biotite mica substrates at temperatures below 1000°C. As indicated by optical and atomic force microscopy, evaporation of carbon from a high purity solid-state source onto biotite surface results in the formation of single-, bi-, and multilayer graphene with size in the micrometer regime. Graphene grown directly on mica surface is of very high crystalline quality with the defect density below the threshold detectable by Raman spectroscopy. The interaction between graphene and the mica substrate is studied by comparison of the Raman spectroscopy and atomic force microscopy data with the corresponding results obtained for graphene flakes mechanically exfoliated onto biotite substrates. Experimental insights are combined with density functional theory calculations to propose a model for the initial stage of the van der Waals growth of graphene on mica surfaces. This work provides important hints on how the direct growth of high quality graphene on insulators can be realized in general without exceeding the thermal budget limitations of Si technologies.
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Submitted 30 May, 2012;
originally announced May 2012.
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Vertical Graphene Base Transistor
Authors:
Wolfgang Mehr,
J. Christoph Scheytt,
Jarek Dabrowski,
Gunther Lippert,
Ya-Hong Xie,
Max C. Lemme,
Mikael Ostling,
Grzegorz Lupina
Abstract:
We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows THz operation. Based on energy band considerations we propose a specific materials solution that is compatible with SiG…
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We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows THz operation. Based on energy band considerations we propose a specific materials solution that is compatible with SiGe process lines.
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Submitted 21 March, 2012; v1 submitted 19 December, 2011;
originally announced December 2011.
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Direct Graphene Growth on Insulator
Authors:
Gunther Lippert,
Jarek Dabrowski,
Max C. Lemme,
Charles M. Marcus,
Olaf Seifarth,
Grzegorz Lupina
Abstract:
Fabrication of graphene devices is often hindered by incompatibility between the silicon technology and the methods of graphene growth. Exfoliation from graphite yields excellent films but is good mainly for research. Graphene grown on metal has a technological potential but requires mechanical transfer. Growth by SiC decomposition requires a temperature budget exceeding the technological limits.…
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Fabrication of graphene devices is often hindered by incompatibility between the silicon technology and the methods of graphene growth. Exfoliation from graphite yields excellent films but is good mainly for research. Graphene grown on metal has a technological potential but requires mechanical transfer. Growth by SiC decomposition requires a temperature budget exceeding the technological limits. These issues could be circumvented by growing graphene directly on insulator, implying Van der Waals growth. During growth, the insulator acts as a support defining the growth plane. In the device, it insulates graphene from the Si substrate. We demonstrate planar growth of graphene on mica surface. This was achieved by molecular beam deposition above 600°C. High resolution Raman scans illustrate the effect of growth parameters and substrate topography on the film perfection. Ab initio calculations suggest a growth model. Data analysis highlights the competition between nucleation at surface steps and flat surface. As a proof of concept, we show the evidence of electric field effect in a transistor with a directly grown channel.
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Submitted 10 June, 2011;
originally announced June 2011.
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Measurement of p + d -> 3He + eta in S(11) Resonance
Authors:
M. Betigeri,
J. Bojowald,
A. Budzanowski,
A. Chatterjee,
M. Drochner,
J. Ernst,
S. Foertsch,
L. Freindl,
D. Frekers,
W. Garske,
K. Grewer,
A. Hamacher,
S. Igel,
J. Ilieva,
R. Jahn,
L. Jarczyk,
G. Kemmerling,
K. Kilian,
S. Kliczewski,
W. Klimala,
D. Kolev,
T. Kutsarova,
J. Lieb,
G. Lippert,
H. Machner
, et al. (14 additional authors not shown)
Abstract:
We have measured the reaction p + d -> 3He + eta at a proton beam energy of 980 MeV, which is 88.5 MeV above threshold using the new ``germanium wall'' detector system. A missing--mass resolution of the detector system of 2.6% was achieved. The angular distribution of the meson is forward peaked. We found a total cross section of (573 +- 83(stat.) +- 69(syst.))nb. The excitation function for the…
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We have measured the reaction p + d -> 3He + eta at a proton beam energy of 980 MeV, which is 88.5 MeV above threshold using the new ``germanium wall'' detector system. A missing--mass resolution of the detector system of 2.6% was achieved. The angular distribution of the meson is forward peaked. We found a total cross section of (573 +- 83(stat.) +- 69(syst.))nb. The excitation function for the present reaction is described by a Breit Wigner form with parameters from photoproduction.
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Submitted 9 December, 1999; v1 submitted 8 December, 1999;
originally announced December 1999.
