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Interplay of thermal and non-thermal effects in x-ray-induced ultrafast melting
Authors:
Ichiro Inoue,
Victor Tkachenko,
Yuya Kubota,
Fabien Dorchies,
Toru Hara,
Hauke Höeppner,
Yuichi Inubushi,
Konrad J. Kapcia,
Hae Ja Lee,
Vladimir Lipp,
Paloma Martinez,
Eiji Nishibori,
Taito Osaka,
Sven Toleikis,
Jumpei Yamada,
Makina Yabashi,
Beata Ziaja,
Philip A. Heimann
Abstract:
X-ray laser-induced structural changes in silicon undergoing femtosecond melting have been investigated by using an x-ray pump-x-ray probe technique. The experimental results for different initial sample temperatures reveal that the onset time and the speed of the atomic disordering are independent of the initial temperature, suggesting that equilibrium atomic motion in the initial state does not…
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X-ray laser-induced structural changes in silicon undergoing femtosecond melting have been investigated by using an x-ray pump-x-ray probe technique. The experimental results for different initial sample temperatures reveal that the onset time and the speed of the atomic disordering are independent of the initial temperature, suggesting that equilibrium atomic motion in the initial state does not play a pivotal role in the x-ray-induced ultrafast melting. By comparing the observed time-dependence of the atomic disordering and the dedicated theoretical simulations, we interpret that the energy transfer from the excited electrons to ions via electron-ion coupling (thermal effect) as well as a strong modification of the interatomic potential due to electron excitations (non-thermal effect) trigger the ultrafast atomic disordering. Our finding of the interplay of thermal and non-thermal effects in the x-ray-induced melting demonstrates that accurate modeling of intense x-ray interactions with matter is essential to ensure a correct interpretation of experiments using intense x-ray laser pulses.
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Submitted 28 August, 2023; v1 submitted 28 August, 2023;
originally announced August 2023.
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Delayed onset and directionality of x-ray-induced atomic displacements observed on subatomic length scales
Authors:
Ichiro Inoue,
Victor Tkachenko,
Konrad J. Kapcia,
Vladimir Lipp,
Beata Ziaja,
Yuichi Inubushi,
Toru Hara,
Makina Yabashi,
Eiji Nishibori
Abstract:
Transient structural changes of Al$_2$O$_3$ on subatomic length scales following irradiation with an intense x-ray laser pulse (photon energy: 8.70 keV; pulse duration: 6 fs; fluence: 8$\times$10$^2$ J/cm$^{2}$) have been investigated by using an x-ray pump x-ray probe technique. The measurement reveals that aluminum and oxygen atoms remain in their original positions by $\sim$20 fs after the inte…
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Transient structural changes of Al$_2$O$_3$ on subatomic length scales following irradiation with an intense x-ray laser pulse (photon energy: 8.70 keV; pulse duration: 6 fs; fluence: 8$\times$10$^2$ J/cm$^{2}$) have been investigated by using an x-ray pump x-ray probe technique. The measurement reveals that aluminum and oxygen atoms remain in their original positions by $\sim$20 fs after the intensity maximum of the pump pulse, followed by directional atomic displacements at the fixed unit cell parameters. By comparing the experimental results and theoretical simulations, we interpret that electron excitation and relaxation triggered by the pump pulse modifies the potential energy surface and drives the directional atomic displacements. Our results indicate that high-resolution x-ray structural analysis with the accuracy of 0.01 Åis feasible even with intense x-ray pulses by making the pulse duration shorter than the timescale needed to complete electron excitation and relaxation processes, which usually take up to a few tens of femtoseconds.
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Submitted 21 March, 2022; v1 submitted 10 December, 2021;
originally announced December 2021.
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Femtosecond laser produced periodic plasma in a colloidal crystal probed by XFEL radiation
Authors:
Nastasia Mukharamova,
Sergey Lazarev,
Janne-Mieke Meijer,
Oleg Yu. Gorobtsov,
Andrej Singer,
Matthieu Chollet,
Michael Bussmann,
Dmitry Dzhigaev,
Yi** Feng,
Marco Garten,
Axel Huebl,
Thomas Kluge,
Ruslan P. Kurta,
Vladimir Lipp,
Robin Santra,
Marcin Sikorski,
Sanghoon Song,
Garth Williams,
Diling Zhu,
Beata Ziaja-Motyka,
Thomas Cowan,
Andrei V. Petukhov,
Ivan A. Vartanyants
Abstract:
With the rapid development of short-pulse intense laser sources, studies of matter under extreme irradiation conditions enter further unexplored regimes. In addition, an application of X-ray Free- Electron Lasers (XFELs), delivering intense femtosecond X-ray pulses allows to investigate sample evolution in IR pump - X-ray probe experiments with an unprecedented time resolution. Here we present the…
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With the rapid development of short-pulse intense laser sources, studies of matter under extreme irradiation conditions enter further unexplored regimes. In addition, an application of X-ray Free- Electron Lasers (XFELs), delivering intense femtosecond X-ray pulses allows to investigate sample evolution in IR pump - X-ray probe experiments with an unprecedented time resolution. Here we present the detailed study of periodic plasma created from the colloidal crystal. Both experimental data and theory modeling show that the periodicity in the sample survives to a large extent the extreme excitation and shock wave propagation inside the colloidal crystal. This feature enables probing the excited crystal, using the powerful Bragg peak analysis, in contrast to the conventional studies of dense plasma created from bulk samples for which probing with Bragg diffraction technique is not possible. X-ray diffraction measurements of excited colloidal crystals may then lead towards a better understanding of matter phase transitions under extreme irradiation conditions.
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Submitted 9 November, 2019;
originally announced November 2019.
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Self-learning analytical interatomic potential describing laser-excited silicon
Authors:
Bernd Bauerhenne,
Vladimir P. Lipp,
Tobias Zier,
Eeuwe S. Zijlstra,
Martin E. Garcia
Abstract:
We develop an electronic-temperature dependent interatomic potential $Φ(T_\text{e})$ for unexcited and laser-excited silicon. The potential is designed to reproduce ab initio molecular dynamics simulations by requiring force- and energy matching for each time step. $Φ(T_\text{e})$ has a simple and flexible analytical form, can describe all relevant interactions and is applicable for any kind of bo…
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We develop an electronic-temperature dependent interatomic potential $Φ(T_\text{e})$ for unexcited and laser-excited silicon. The potential is designed to reproduce ab initio molecular dynamics simulations by requiring force- and energy matching for each time step. $Φ(T_\text{e})$ has a simple and flexible analytical form, can describe all relevant interactions and is applicable for any kind of boundary conditions (bulk, thin films, clusters). Its overall shape is automatically adjusted by a self-learning procedure, which finally finds the global minimum in the parameter space. We show that $Φ(T_\text{e})$ can reproduce all thermal and nonthermal features provided by ab initio simulations. We apply the potential to simulate laser-excited Si nanoparticles and find critical dam** of their breathing modes due to nonthermal melting.
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Submitted 20 December, 2018;
originally announced December 2018.
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Various damage mechanisms in carbon and silicon materials under femtosecond x-ray irradiation
Authors:
Nikita Medvedev,
Viktor Tkachenko,
Vladimir Lipp,
Zheng Li,
Beata Ziaja
Abstract:
We review the results of our research on damage mechanisms in materials irradiated with femtosecond free-electron-laser (FEL) pulses. They were obtained using our hybrid approach, XTANT (X-ray-induced Thermal And Nonthermal Transitions). Various damage mechanisms are discussed with respect to the pulse fluence and material properties on examples of diamond, amorphous carbon, C60 crystal, and silic…
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We review the results of our research on damage mechanisms in materials irradiated with femtosecond free-electron-laser (FEL) pulses. They were obtained using our hybrid approach, XTANT (X-ray-induced Thermal And Nonthermal Transitions). Various damage mechanisms are discussed with respect to the pulse fluence and material properties on examples of diamond, amorphous carbon, C60 crystal, and silicon. We indicate conditions: producing thermal melting of targets as a result of electron-ion energy exchange; nonthermal phase transitions due to modification of the interatomic potential; Coulomb explosion due to accumulated net charge in finite-size systems; spallation or ablation at higher fluences due to detachment of sample fragments; and warm dense matter formation. Transient optical coefficients are compared with experimental data whenever available, proving the validity of our modeling approach. Predicted diffraction patterns can be compared with the results of ongoing or future FEL experiments. Limitations of our model and possible future directions of development are outlined.
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Submitted 19 May, 2018;
originally announced May 2018.
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Semi-implicit finite-difference method with predictor-corrector algorithm for solution of diffusion equation with nonlinear terms
Authors:
V. P. Lipp,
B. Rethfeld,
M. E. Garcia,
D. S. Ivanov
Abstract:
We present a finite-difference integration algorithm for solution of a system of differential equations containing a diffusion equation with nonlinear terms. The approach is based on Crank-Nicolson method with predictor-corrector algorithm and provides high stability and precision. Using a specific example of short-pulse laser interaction with semiconductors, we give a detailed description of the…
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We present a finite-difference integration algorithm for solution of a system of differential equations containing a diffusion equation with nonlinear terms. The approach is based on Crank-Nicolson method with predictor-corrector algorithm and provides high stability and precision. Using a specific example of short-pulse laser interaction with semiconductors, we give a detailed description of the method and apply it for the solution of the corresponding system of differential equations, one of which is a nonlinear diffusion equation. The calculated dynamics of the energy density and the number density of photoexcited free carriers upon the absorption of laser energy are presented for the irradiated thin silicon film. The energy conservation within 0.2% has been achieved for the time step $10^4$ times larger than that in case of the explicit scheme, for the chosen numerical setup. We also present a few examples of successful application of the method demonstrating its benefits for the theoretical studies of laser-matter interaction problems.
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Submitted 4 July, 2019; v1 submitted 26 November, 2015;
originally announced November 2015.
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Atomistic-continuum modeling of short laser pulse melting of Si targets
Authors:
V. P. Lipp,
B. Rethfeld,
M. E. Garcia,
D. S. Ivanov
Abstract:
We present an atomistic-continuum model to simulate ultrashort laser-induced melting processes in semiconductor solids on the example of silicon. The kinetics of transient non-equilibrium phase transition mechanisms is addressed with a Molecular Dynamics method at atomic level, whereas the laser light absorption, strong generated electron-phonon non-equilibrium, fast diffusion and heat conduction…
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We present an atomistic-continuum model to simulate ultrashort laser-induced melting processes in semiconductor solids on the example of silicon. The kinetics of transient non-equilibrium phase transition mechanisms is addressed with a Molecular Dynamics method at atomic level, whereas the laser light absorption, strong generated electron-phonon non-equilibrium, fast diffusion and heat conduction due to photo-excited free carriers are accounted for in the continuum. We give a detailed description of the model, which is then applied to study the mechanism of short laser pulse melting of free standing Si films. The effect of laser-induced pressure and temperature of the lattice on the melting kinetics is investigated. Two competing melting mechanisms, heterogeneous and homogeneous, were identified. Apart of classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to negative volume of melting of modeled Si material, -7.5%, the material contracts upon the phase transition, relaxes the compressive stresses and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. The threshold fluence value, at which homogeneous nucleation of liquid starts contributing to the classical heterogeneous propagation of the solid-liquid interface, is found from the series of simulations at different laser input fluences. On the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with fcc crystal structure.
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Submitted 16 November, 2014;
originally announced November 2014.
