-
Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3
Authors:
G. J. Shu,
S. C. Liou,
S. K. Karna,
R. Sankar,
M. Hayashi,
F. C. Chou
Abstract:
Layered narrow band gap semiconductor Bi2Se3 is composed of heavy elements with strong spin-orbital coupling (SOC), which has been identified both as a good candidate of thermoelectric material of high thermoelectric figure-of-merit (ZT) and a topological insulator of Z2-type with a gapless surface band in Dirac cone shape. The existence of a conjugated pi-bond system on the surface of each Bi2Se3…
▽ More
Layered narrow band gap semiconductor Bi2Se3 is composed of heavy elements with strong spin-orbital coupling (SOC), which has been identified both as a good candidate of thermoelectric material of high thermoelectric figure-of-merit (ZT) and a topological insulator of Z2-type with a gapless surface band in Dirac cone shape. The existence of a conjugated pi-bond system on the surface of each Bi2Se3 quintuple layer is proposed based on an extended valence bond model having valence electrons distributed in the hybridized orbitals. Supporting experimental evidences of a 2D conjugated pi-bond system on each quintuple layer of Bi2Se3 are provided by electron energy-loss spectroscopy (EELS) and electron density (ED) map** through inverse Fourier transform of X-ray diffraction data. Quantum chemistry calculations support the pi-bond existence between partially filled 4pz orbitals of Se via side-to-side orbital overlap positively. The conjugated pi-bond system on the surface of each quintuple Bi2Se3 layer is proposed being similar to that found in graphite (graphene) and responsible for the unique 2D conduction mechanism. The van der Waals (vdW) attractive force between quintuple layers is interpreted being coming from the anti-ferroelectrically ordered effective electric dipoles which are constructed with pi-bond trimer pairs on Se-layers across the vdW gap of minimized Coulomb repulsion.
△ Less
Submitted 3 April, 2018;
originally announced April 2018.
-
Graphene-like conjugated pi-bond system in Pb1-xSnxSe
Authors:
G. J. Shu,
S. C. Liou,
S. Karna,
R. Sankar,
M. Hayashi,
M. -W. Chu,
F. C. Chou
Abstract:
Following the identification of the pi bond in graphene, in this work, a pi bond constructed through side-to-side overlap of half-filled 6pz orbitals was observed in a non-carbon crystal of Pb1-xSnxSe (x=0.34) (PSS), a prototype topological crystalline insulator (TCI) and thermoelectric material with a high figure-of-merit (ZT). PSS compounds with a rock-salt type cubic crystal structure was found…
▽ More
Following the identification of the pi bond in graphene, in this work, a pi bond constructed through side-to-side overlap of half-filled 6pz orbitals was observed in a non-carbon crystal of Pb1-xSnxSe (x=0.34) (PSS), a prototype topological crystalline insulator (TCI) and thermoelectric material with a high figure-of-merit (ZT). PSS compounds with a rock-salt type cubic crystal structure was found to consist of sigma bond connected covalent chains of Pb(Sn)-Se with an additional pi bond that is shared as a conjugated system among the four nearest neighbor Pb pairs in square symmetry within all (001) monoatomic layers per cubic unit cell. The pi bond formed with half-filled 6pz orbitals between Pb atoms is consistent with the calculated results from quantum chemistry. The presence of pi bonds was identified and verified with electron energy-loss spectroscopy (EELS) through plasmonic excitations and electron density (ED) map** via an inverse Fourier transform of X-ray diffraction.
△ Less
Submitted 24 March, 2015;
originally announced March 2015.
-
π-Plasmon Dispersion in Free-Standing Graphene by Momentum-Resolved Electron Energy-Loss Spectroscopy
Authors:
S. C. Liou,
C. -S. Shie,
C. H. Chen,
R. Breitwieser,
W. W. Pai,
G. Y. Guo,
M. -W. Chu
Abstract:
The π-plasmon dispersion in graphene was scrutinized by momentum(q)-resolved electron energy-loss spectroscopy with an improved q resolution and found to display the square root of q dispersion characteristic of the collective excitation of two-dimensional electron systems, in contrast with previous experimental and theoretical studies which reported a linear q dispersion. Our theoretical elaborat…
▽ More
The π-plasmon dispersion in graphene was scrutinized by momentum(q)-resolved electron energy-loss spectroscopy with an improved q resolution and found to display the square root of q dispersion characteristic of the collective excitation of two-dimensional electron systems, in contrast with previous experimental and theoretical studies which reported a linear q dispersion. Our theoretical elaborations on the q-dependent spectra affirm this square root of q relation and further unveil an in-plane electronic anisotropy. The physical property of the π plasmon is thoroughly compared to that of the two-dimensional plasmon due to carriers of the Dirac fermions. A clear distinction between the π plasmon and the two-dimensional Dirac plasmon was demonstrated, clarifying the common notion on correlating the linearly-dispersed Dirac cones to the linear dispersion of the π plasmon previously reported.
△ Less
Submitted 29 December, 2014;
originally announced December 2014.
-
pi-bonds in graphene and surface of topological insulator Bi2Se3
Authors:
G. J. Shu,
S. C. Liou,
F. C. Chou
Abstract:
Chemical bond analysis for the topological insulator (TI) Bi2Se3 following valence bond theory and VSEPR rule is proposed and compared to that of graphene. The existence of pi-bond trimers on surface Se-layer is revealed to be responsible for the unusual 2D surface conduction found in the prototype Z2 topological insulator Bi2Se3, which shows great similarity to the ideal "surface-only" 2D materia…
▽ More
Chemical bond analysis for the topological insulator (TI) Bi2Se3 following valence bond theory and VSEPR rule is proposed and compared to that of graphene. The existence of pi-bond trimers on surface Se-layer is revealed to be responsible for the unusual 2D surface conduction found in the prototype Z2 topological insulator Bi2Se3, which shows great similarity to the ideal "surface-only" 2D material graphene with surface band in Dirac cone shape. The pi-bond trimers on the surface of TI form a dynamic pi-bond conjugated system of implicit chirality. Local pi-bond energy exchange in cross-bridge model is proposed responsible for the unique 2D surface conduction for topological insulator Bi2Se3, and the similar low dimensional conduction mechanism can also be identified in graphene and conductive polymers. Preliminary supporting evidence for the existence of pi-bonds is provided by the commonly assigned pi plasmon for the spectral feature near 7 eV in graphite and Bi2Se3 using electron energy-loss spectroscopy (EELS).
△ Less
Submitted 8 July, 2013;
originally announced July 2013.
-
Plasmons dispersion and nonvertical interband transitions in single-crystal Bi2Se3 investigated by electron energy loss spectroscopy
Authors:
S. C. Liou,
M. -W. Chu,
R. Sankar,
F. -T. Huang,
G. -J. Shu,
F. C. Chou,
C. H. Chen
Abstract:
Plasmons dispersion and nonvertical interband transitions in Bi2Se3 single crystals were investigated by electron energy-loss spectroscopy in conjunction with (scanning) transmission electron microscopy, (S)TEM-EELS. Both volume plasmons (π plasmon at 7 eV and π+σ plasmon at 17 eV) and surface plasmons (~5.5 and 10 eV) were demonstrated in STEM-EELS spectra and the corresponding spectral imaging i…
▽ More
Plasmons dispersion and nonvertical interband transitions in Bi2Se3 single crystals were investigated by electron energy-loss spectroscopy in conjunction with (scanning) transmission electron microscopy, (S)TEM-EELS. Both volume plasmons (π plasmon at 7 eV and π+σ plasmon at 17 eV) and surface plasmons (~5.5 and 10 eV) were demonstrated in STEM-EELS spectra and the corresponding spectral imaging in real space. In the further EELS experiments in reciprocal space, the momentum-dependent spectra reveal very different dispersion behavior between π and π+σ plasmons, with π+σ plasmons showing a typical quadratic dependence whereas the π plasmon exhibiting a linear dispersion analogous to what was reported for graphene. Furthermore, a low energy excitation 0.7~1.6 eV was also observed which is attributed to direct nonvertical interband transitions along the gamma-F direction.
△ Less
Submitted 2 January, 2013;
originally announced January 2013.
