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A HRNet-based Rehabilitation Monitoring System
Authors:
Yi-Ching Hung,
Yu-Qing Jiang,
Fong-Syuan Liou,
Yu-Hsuan Tsao,
Zi-Cing Chiang,
MIn-Te Sun
Abstract:
The rehabilitation treatment helps to heal minor sports and occupational injuries. In a traditional rehabilitation process, a therapist will assign certain actions to a patient to perform in between hospital visits, and it will rely on the patient to remember actions correctly and the schedule to perform them. Unfortunately, many patients forget to perform actions or fail to recall actions in deta…
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The rehabilitation treatment helps to heal minor sports and occupational injuries. In a traditional rehabilitation process, a therapist will assign certain actions to a patient to perform in between hospital visits, and it will rely on the patient to remember actions correctly and the schedule to perform them. Unfortunately, many patients forget to perform actions or fail to recall actions in detail. As a consequence, the rehabilitation treatment is hampered or, in the worst case, the patient may suffer from additional injury caused by performing incorrect actions. To resolve these issues, we propose a HRNet-based rehabilitation monitoring system, which can remind a patient when to perform the actions and display the actions for the patient to follow via the patient's smartphone. In addition, it helps the therapist to monitor the progress of the rehabilitation for the patient. Our system consists of an iOS app and several components at the server side. The app is in charge of displaying and collecting action videos. The server computes the similarity score between the therapist's actions and the patient's in the videos to keep track of the number of repetitions of each action. Theses stats will be shown to both of the patient and therapist. The extensive experiments show that the F1-Score of the similarity calculation is as high as 0.9 and the soft accuracy of the number of repetitions is higher than 90%.
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Submitted 14 July, 2023; v1 submitted 19 June, 2023;
originally announced June 2023.
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Imaging gate-induced molecular melting on a graphene field-effect transistor
Authors:
Franklin Liou,
Hsin-Zon Tsai,
Zachary A. H. Goodwin,
Andrew S. Aikawa,
Ethan Ha,
Michael Hu,
Yiming Yang,
Kenji Watanabe,
Takashi Taniguchi,
Alex Zettl,
Johannes Lischner,
Michael F. Crommie
Abstract:
Solid-liquid phase transitions are fundamental physical processes, but atomically-resolved microscopy has yet to capture both the solid and liquid dynamics for such a transition. We have developed a new technique for controlling the melting and freezing of 2D molecular layers on a graphene field-effect transistor (FET) that allows us to image phase transition dynamics via atomically-resolved scann…
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Solid-liquid phase transitions are fundamental physical processes, but atomically-resolved microscopy has yet to capture both the solid and liquid dynamics for such a transition. We have developed a new technique for controlling the melting and freezing of 2D molecular layers on a graphene field-effect transistor (FET) that allows us to image phase transition dynamics via atomically-resolved scanning tunneling microscopy. Back-gate voltages applied to a F4TCNQ-decorated graphene FET induce reversible transitions between a charge-neutral solid phase and a negatively charged liquid phase. Nonequilibrium molecular melting dynamics are visualized by rapidly heating the graphene surface with electrical current and imaging the resulting evolution toward new equilibrium states. An analytical model has been developed that explains the observed equilibrium mixed-state phases based on spectroscopic measurement of both solid and liquid molecular energy levels. Observed non-equilibrium melting dynamics are consistent with Monte Carlo simulations.
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Submitted 23 November, 2022;
originally announced November 2022.
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Imaging reconfigurable molecular concentration on a graphene field-effect transistor
Authors:
Franklin Liou,
Hsin-Zon Tsai,
Andrew S. Aikawa,
Kyler C. Natividad,
Eric Tang,
Ethan Ha,
Alexander Riss,
Kenji Watanabe,
Takashi Taniguchi,
Johannes Lischner,
Alex Zettl,
Michael F. Crommie
Abstract:
The spatial arrangement of adsorbates deposited onto a clean surface in vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors exhibit reversible, electrically-tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F4TCNQ molecules was ach…
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The spatial arrangement of adsorbates deposited onto a clean surface in vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors exhibit reversible, electrically-tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F4TCNQ molecules was achieved on a graphene FET at T = 4.5K. This capability enables precisely controlled impurity do** of graphene devices and also provides a new method for determining molecular energy level alignment based on the gate-dependence of molecular concentration. The gate-tunable molecular concentration can be explained by a dynamical molecular rearrangement process that reduces total electronic energy by maintaining Fermi level pinning in the device substrate. Molecular surface concentration in this case is fully determined by the device back-gate voltage, its geometric capacitance, and the energy difference between the graphene Dirac point and the molecular LUMO level.
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Submitted 15 September, 2021;
originally announced September 2021.
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Imaging gate-tunable Tomonaga-Luttinger liquids in 1H-MoSe$_2$ mirror twin boundaries
Authors:
Tiancong Zhu,
Wei Ruan,
Yan-Qi Wang,
Hsin-Zon Tsai,
Shuopei Wang,
Canxun Zhang,
Tianye Wang,
Franklin Liou,
Kenji Watanabe,
Takashi Taniguchi,
Jeffrey B. Neaton,
Alex Weber-Bargioni,
Alex Zettl,
Ziqiang Qiu,
Guangyu Zhang,
Feng Wang,
Joel E. Moore,
Michael F. Crommie
Abstract:
One-dimensional electron systems (1DESs) exhibit properties that are fundamentally different from higher-dimensional systems. For example, electron-electron interactions in 1DESs have been predicted to induce Tomonaga-Luttinger liquid behavior. Naturally-occurring grain boundaries in single-layer semiconducting transition metal dichalcogenides provide 1D conducting channels that have been proposed…
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One-dimensional electron systems (1DESs) exhibit properties that are fundamentally different from higher-dimensional systems. For example, electron-electron interactions in 1DESs have been predicted to induce Tomonaga-Luttinger liquid behavior. Naturally-occurring grain boundaries in single-layer semiconducting transition metal dichalcogenides provide 1D conducting channels that have been proposed to host Tomonaga-Luttinger liquids, but charge density wave physics has also been suggested to explain their behavior. Clear identification of the electronic ground state of this system has been hampered by an inability to electrostatically gate such boundaries and thereby tune their charge carrier concentration. Here we present a scanning tunneling microscopy/spectroscopy study of gate-tunable mirror twin boundaries (MTBs) in single-layer 1H-MoSe$_2$ devices. Gating here enables STM spectroscopy to be performed for different MTB electron densities, thus allowing precise characterization of electron-electron interaction effects. Visualization of MTB electronic structure under these conditions allows unambiguous identification of collective density wave excitations having two distinct velocities, in quantitative agreement with the spin-charge separation predicted by finite-length Tomonaga-Luttinger-liquid theory.
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Submitted 20 August, 2021; v1 submitted 9 August, 2021;
originally announced August 2021.
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Imaging spinon density modulations in a 2D quantum spin liquid
Authors:
Wei Ruan,
Yi Chen,
Shujie Tang,
**woong Hwang,
Hsin-Zon Tsai,
Ryan Lee,
Meng Wu,
Hye** Ryu,
Salman Kahn,
Franklin Liou,
Caihong Jia,
Andrew Aikawa,
Choongyu Hwang,
Feng Wang,
Yongseong Choi,
Steven G. Louie,
Patrick A. Lee,
Zhi-Xun Shen,
Sung-Kwan Mo,
Michael F. Crommie
Abstract:
Two-dimensional triangular-lattice antiferromagnets are predicted under some conditions to exhibit a quantum spin liquid ground state whose low-energy behavior is described by a spinon Fermi surface. Directly imaging the resulting spinons, however, is difficult due to their fractional, chargeless nature. Here we use scanning tunneling spectroscopy to image spinon density modulations arising from a…
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Two-dimensional triangular-lattice antiferromagnets are predicted under some conditions to exhibit a quantum spin liquid ground state whose low-energy behavior is described by a spinon Fermi surface. Directly imaging the resulting spinons, however, is difficult due to their fractional, chargeless nature. Here we use scanning tunneling spectroscopy to image spinon density modulations arising from a spinon Fermi surface instability in single-layer 1T-TaSe$_2$, a two-dimensional Mott insulator. We first demonstrate the existence of localized spins arranged on a triangular lattice in single-layer 1T-TaSe$_2$ by contacting it to a metallic 1H-TaSe$_2$ layer and measuring the Kondo effect. Subsequent spectroscopic imaging of isolated, single-layer 1T-TaSe$_2$ reveals long-wavelength modulations at Hubbard band energies that reflect spinon density modulations. This allows direct experimental measurement of the spinon Fermi wavevector, in good agreement with theoretical predictions for a 2D quantum spin liquid. These results establish single-layer 1T-TaSe$_2$ as a new platform for studying novel two-dimensional quantum-spin-liquid phenomena.
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Submitted 15 September, 2020;
originally announced September 2020.
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Visualizing Exotic Orbital Texture in the Single-Layer Mott Insulator 1T-TaSe2
Authors:
Yi Chen,
Wei Ruan,
Meng Wu,
Shujie Tang,
Hye** Ryu,
Hsin-Zon Tsai,
Ryan Lee,
Salman Kahn,
Franklin Liou,
Caihong Jia,
Oliver R. Albertini,
Hongyu Xiong,
Tao Jia,
Zhi Liu,
Jonathan A. Sobota,
Amy Y. Liu,
Joel E. Moore,
Zhi-Xun Shen,
Steven G. Louie,
Sung-Kwan Mo,
Michael F. Crommie
Abstract:
Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the exploration of novel Mott systems in the two-dimensional limit. Here we report characterization of the local electronic properties of single- and few-layer 1T-TaSe…
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Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the exploration of novel Mott systems in the two-dimensional limit. Here we report characterization of the local electronic properties of single- and few-layer 1T-TaSe2 via spatial- and momentum-resolved spectroscopy involving scanning tunneling microscopy and angle-resolved photoemission. Our combined experimental and theoretical study indicates that electron correlation induces a robust Mott insulator state in single-layer 1T-TaSe2 that is accompanied by novel orbital texture. Inclusion of interlayer coupling weakens the insulating phase in 1T-TaSe2, as seen by strong reduction of its energy gap and quenching of its correlation-driven orbital texture in bilayer and trilayer 1T-TaSe2. Our results establish single-layer 1T-TaSe2 as a useful new platform for investigating strong correlation physics in two dimensions.
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Submitted 16 May, 2019; v1 submitted 24 April, 2019;
originally announced April 2019.