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DFT-Assisted Investigation of the Electric Field and Charge Density Distribution of Pristine and Defective 2D WSe$_2$ by Differential Phase Contrast Imaging
Authors:
Maja Groll,
Julius Bürger,
Ioannis Caltzidis,
Klaus D. Jöns,
Wolf Gero Schmidt,
Uwe Gerstmann,
Jörg K. N. Lindner
Abstract:
Most properties of solid materials are defined by their internal electric field and charge density distributions which so far are difficult to measure with high spatial resolution. Especially for 2D materials, the atomic electric fields influence the optoelectronic properties. In this study, the atomic-scale electric field and charge density distribution of WSe$_2$ bi- and trilayers are revealed b…
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Most properties of solid materials are defined by their internal electric field and charge density distributions which so far are difficult to measure with high spatial resolution. Especially for 2D materials, the atomic electric fields influence the optoelectronic properties. In this study, the atomic-scale electric field and charge density distribution of WSe$_2$ bi- and trilayers are revealed by using an emerging microscopy technique, differential phase contrast (DPC) imaging in the scanning transmission electron microscope (STEM). For pristine material, a higher positive charge density located at the selenium atomic columns compared to the tungsten atomic columns is obtained and tentatively explained by a coherent scattering effect. Furthermore, the change in the electric field distribution induced by a missing selenium atomic column is investigated. A characteristic electric field distribution in the vicinity of the defect with locally reduced magnitudes compared to the pristine lattice is observed. This effect is accompanied by a considerable inward relaxation of the surrounding lattice, which according to first principles DFT calculation is fully compatible with a missing column of Se atoms. This shows that DPC imaging, as an electric field sensitive technique, provides additional and remarkable information to the otherwise only structural analysis obtained with conventional STEM imaging.
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Submitted 8 May, 2024; v1 submitted 3 April, 2023;
originally announced April 2023.
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Cyclotron- and magnetoplasmon resonances in bilayer graphene ratchets
Authors:
Erwin Mönch,
Sergey O. Potashin,
Katja Lindner,
Ivan Yahniuk,
Leonid E. Golub,
Valentin Yu. Kachorovskii,
Vassily V. Bel'kov,
Robin Huber,
Kenji Watanabe,
Takashi Taniguchi,
Jonathan Eroms,
Dieter Weiss,
Sergey D. Ganichev
Abstract:
We report on a tunable - by magnetic field and gate voltage - conversion of terahertz radiation into a dc current in spatially modulated bilayer graphene. We experimentally demonstrate that the underlying physics is related to the so-called ratchet effect. Our key findings are the direct observation of a sharp cyclotron resonance in the photocurrent and the demonstration of two effects caused by e…
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We report on a tunable - by magnetic field and gate voltage - conversion of terahertz radiation into a dc current in spatially modulated bilayer graphene. We experimentally demonstrate that the underlying physics is related to the so-called ratchet effect. Our key findings are the direct observation of a sharp cyclotron resonance in the photocurrent and the demonstration of two effects caused by electron-electron interaction: the plasmonic splitting of the resonance due to long-range Coulomb coupling and the partial suppression of its second harmonic due to fast interparticle collisions. We develop a theory which perfectly fits our data. We argue that the ratchet current is generated in the hydrodynamic regime of non-ideal electron liquid.
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Submitted 17 August, 2022;
originally announced August 2022.
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Ratchet effect in spatially modulated bilayer graphene: Signature of hydrodynamic transport
Authors:
Erwin Mönch,
Sergey O. Potashin,
Katja Lindner,
Ivan Yahniuk,
Leonid E. Golub,
Valentin Yu. Kachorovskii,
Vasily V. Bel'kov,
Robin Huber,
Kenji Watanabe,
Takashi Taniguchi,
Jonathan Eroms,
Dieter Weiss,
Sergey D. Ganichev
Abstract:
We report on the observation of the ratchet effect -- generation of direct electric current in response to external terahertz (THz) radiation -- in bilayer graphene, where inversion symmetry is broken by an asymmetric dual-grating gate potential. As a central result, we demonstrate that at high temperature, $T = 150~\textrm{K}$, the ratchet current decreases at high frequencies as…
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We report on the observation of the ratchet effect -- generation of direct electric current in response to external terahertz (THz) radiation -- in bilayer graphene, where inversion symmetry is broken by an asymmetric dual-grating gate potential. As a central result, we demonstrate that at high temperature, $T = 150~\textrm{K}$, the ratchet current decreases at high frequencies as $ \propto 1/ω^2$, while at low temperature, $T = 4.2~\textrm{K}$, the frequency dependence becomes much stronger $\propto 1/ω^6$. The developed theory shows that the frequency dependence of the ratchet current is very sensitive to the ratio of the electron-impurity and electron-electron scattering rates. The theory predicts that the dependence $1/ω^6$ is realized in the hydrodynamic regime, when electron-electron scattering dominates, while $1/ω^2$ is specific for the drift-diffusion approximation. Therefore, our experimental observation of a very strong frequency dependence reveals the emergence of the hydrodynamic regime.
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Submitted 17 November, 2021;
originally announced November 2021.
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Cyclotron resonance overtones and near-field magnetoabsorption via terahertz Bernstein modes in graphene
Authors:
D. A. Bandurin,
E. Mönch,
K. Kapralov,
I. Y. Phinney,
K. Lindner,
S. Liu,
J. H. Edgar,
I. A. Dmitriev,
P. Jarillo-Herrero,
D. Svintsov,
S. D. Ganichev
Abstract:
Two-dimensional electron systems subjected to a perpendicular magnetic field absorb electromagnetic radiation via the cyclotron resonance (CR). Here we report a qualitative breach of this well-known behaviour in graphene. Our study of the terahertz photoresponse reveals a resonant burst at the main overtone of the CR, drastically exceeding the signal detected at the position of the ordinary CR. In…
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Two-dimensional electron systems subjected to a perpendicular magnetic field absorb electromagnetic radiation via the cyclotron resonance (CR). Here we report a qualitative breach of this well-known behaviour in graphene. Our study of the terahertz photoresponse reveals a resonant burst at the main overtone of the CR, drastically exceeding the signal detected at the position of the ordinary CR. In accordance with the developed theory, the photoresponse dependencies on the magnetic field, do** level, and sample geometry suggest that the origin of this anomaly lies in the near-field magnetoabsorption facilitated by the Bernstein modes, ultra-slow magnetoplasmonic excitations reshaped by nonlocal electron dynamics. Close to the CR harmonics, these modes are characterized by a flat dispersion and a diverging plasmonic density of states that strongly amplifies the radiation absorption. Besides fundamental interest, our experimental results and developed theory show that the radiation absorption via nonlocal collective modes can facilitate a strong photoresponse, a behaviour potentially useful for infrared and terahertz technology.
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Submitted 1 July, 2021; v1 submitted 3 June, 2021;
originally announced June 2021.
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Applicability of molecular statics simulation to partial dislocations in GaAs
Authors:
Thomas Riedl,
Jörg K. N. Lindner
Abstract:
The suitability of molecular statics (MS) simulations to model the structure of 90° glide set partial dislocation cores in GaAs is analyzed. In the MS simulations the atomic positions are iteratively relaxed by energy minimization, for which a Tersoff potential parametrization appropriate for nanostructures has been used. We show that for the Ga terminated partial the resulting bond lengths of the…
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The suitability of molecular statics (MS) simulations to model the structure of 90° glide set partial dislocation cores in GaAs is analyzed. In the MS simulations the atomic positions are iteratively relaxed by energy minimization, for which a Tersoff potential parametrization appropriate for nanostructures has been used. We show that for the Ga terminated partial the resulting bond lengths of the atoms in the dislocation core agree within 5-10% with those of previous density functional theory studies, whereas a significant discrepancy appears in the case of the As terminated partial.
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Submitted 19 September, 2019;
originally announced September 2019.
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InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A
Authors:
V. S. Kunnathully,
T. Riedl,
A. Trapp,
T. Langer,
D. Reuter,
J. K. N. Lindner
Abstract:
Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in the InAs/GaAs(111)A system using a combination of nanosphere lithography and reactive ion etching of the GaAs(111)A substrate for nano-patterning of the…
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Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in the InAs/GaAs(111)A system using a combination of nanosphere lithography and reactive ion etching of the GaAs(111)A substrate for nano-patterning of the substrate, yielding pillars with honeycomb and hexagonal arrangements and varied nearest neighbor distances. Substrate patterning is followed by MBE growth of InAs at temperatures of 150 - 350 C and growth rates of 0.011 nm/s and 0.11 nm/s. InAs growth in the form of nano-islands on the pillar tops is achieved by lowering the adatom migration length by choosing a low growth temperature of 150 C at the growth rate 0.011 nm/s. The choice of a higher growth rate of 0.11 nm/s results in higher InAs island nucleation and the formation of hillocks concentrated at the pillar bases due to a further reduction of adatom migration length. A common feature of the growth morphology for all other explored conditions is the formation of merged hillocks or pyramids with well-defined facets due to the presence of a concave surface curvature at the pillar bases acting as adatom sinks.
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Submitted 18 September, 2019;
originally announced September 2019.
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Strain-driven InAs island growth on top of GaAs(111) nanopillars
Authors:
T. Riedl,
V. S. Kunnathully,
A. Trapp,
T. Langer,
D. Reuter,
J. K. N. Lindner
Abstract:
We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars experimentally and theoretically. Catalyst-free molecular beam epitaxial growth of InAs at low temperatures on GaAs nanopillars results in InAs islands with diameters < 30 nm exhibiting predominantly rounded triangular in-plane shapes. The islands show a tendency to grow at posit…
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We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars experimentally and theoretically. Catalyst-free molecular beam epitaxial growth of InAs at low temperatures on GaAs nanopillars results in InAs islands with diameters < 30 nm exhibiting predominantly rounded triangular in-plane shapes. The islands show a tendency to grow at positions displaced from the center towards the pillar edge. Atomistic molecular statics simulations evidence that triangular-prismatic islands centered to the pillar axis with diameters smaller than that of the nanopillars are energetically favored. Moreover, we reveal the existence of minimum-energy states for off-axis island positions, in agreement with the experiment. These findings are interpreted by evaluating the spatial strain distributions and the number of broken bonds of surface atoms as a measure for the surface energy. The preferred off-axis island positions can be understood in terms of an increased compliancy of the GaAs nanopillar beneath the island because of the vicinity of free surfaces, leading to a reduction of strain energy. The influence of surface steps on the energy of the system is addressed as well.
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Submitted 13 January, 2020; v1 submitted 17 September, 2019;
originally announced September 2019.
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Pluto's lower atmosphere and pressure evolution from ground-based stellar occultations, 1988-2016
Authors:
E. Meza,
B. Sicardy,
M. Assafin,
J. L. Ortiz,
T. Bertrand,
E. Lellouch,
J. Desmars,
F. Forget,
D. Bérard,
A. Doressoundiram,
J. Lecacheux,
J. Marques Oliveira,
F. Roques,
T. Widemann,
F. Colas,
F. Vachier,
S. Renner,
R. Leiva,
F. Braga-Ribas,
G. Benedetti-Rossi,
J. I. B. Camargo,
A. Dias-Oliveira,
B. Morgado,
A. R. Gomes-Júnior,
R. Vieira-Martins
, et al. (145 additional authors not shown)
Abstract:
Context. Pluto's tenuous nitrogen (N2) atmosphere undergoes strong seasonal effects due to high obliquity and orbital eccentricity, and has been recently (July 2015) observed by the New Horizons spacecraft. Goals are (i) construct a well calibrated record of the seasonal evolution of surface pressure on Pluto and (ii) constrain the structure of the lower atmosphere using a central flash observed i…
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Context. Pluto's tenuous nitrogen (N2) atmosphere undergoes strong seasonal effects due to high obliquity and orbital eccentricity, and has been recently (July 2015) observed by the New Horizons spacecraft. Goals are (i) construct a well calibrated record of the seasonal evolution of surface pressure on Pluto and (ii) constrain the structure of the lower atmosphere using a central flash observed in 2015. Method: eleven stellar occultations by Pluto observed between 2002 and 2016 are used to retrieve atmospheric profiles (density, pressure, temperature) between $\sim$5 km and $\sim$380 km altitude levels (i.e. pressures from about 10 microbar to 10 nanobar). Results: (i) Pressure has suffered a monotonic increase from 1988 to 2016, that is compared to a seasonal volatile transport model, from which tight constraints on a combination of albedo and emissivity of N2 ice are derived; (ii) A central flash observed on 2015 June 29 is consistent with New Horizons REX profiles, provided that (a) large diurnal temperature variations (not expected by current models) occur over Sputnik Planitia and/or (b) hazes with tangential optical depth of about 0.3 are present at 4-7 km altitude levels and/or (c) the nominal REX density values are overestimated by an implausibly large factor of about 20% and/or (d) higher terrains block part of the flash in the Charon facing hemisphere.
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Submitted 6 March, 2019;
originally announced March 2019.
