Showing 1–42 of 42 results for author: Lindelof, P E

Using light and heat to controllably switch and reset disorder configuration in nanoscale devices

Authors: A. M. See, M. Aagesen, P. E. Lindelof, A. R. Hamilton, A. P. Micolich

Abstract: Quantum dots exhibit reproducible conductance fluctuations at low temperatures due to electron quantum interference. The sensitivity of these fluctuations to the underlying disorder potential has only recently been fully realized. We exploit this sensitivity to obtain a novel tool for better understanding the role that background impurities play in the electrical properties of high-mobility AlGaAs… ▽ More Quantum dots exhibit reproducible conductance fluctuations at low temperatures due to electron quantum interference. The sensitivity of these fluctuations to the underlying disorder potential has only recently been fully realized. We exploit this sensitivity to obtain a novel tool for better understanding the role that background impurities play in the electrical properties of high-mobility AlGaAs/GaAs heterostructures and nanoscale devices. In particular, we report the remarkable ability to first alter the disorder potential in an undoped AlGaAs/GaAs heterostructure by optical illumination and then reset it back to its initial configuration by room temperature thermal cycling in the dark. We attribute this behavior to a mixture of C background impurities acting as shallow acceptors and deep trap** by Si impurities. This "alter and reset" capability, not possible in modulation-doped heterostructures, offers an exciting route to studying how scattering from even small densities of charged impurities influences the properties of nanoscale semiconductor devices. △ Less

Submitted 24 August, 2014; v1 submitted 20 August, 2014; originally announced August 2014.

Comments: 7 pages, 4 figures

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

Authors: S. J. MacLeod, A. M. See, Z. K. Keane, P. Scriven, A. P. Micolich, M. Aagesen, P. E. Lindelof, A. R. Hamilton

Abstract: Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena due to their charge stability and robust electronic properties after thermal cycling. However these devices require a large top-gate which is unsuitable for the fast and sensitive radio frequency reflectome… ▽ More Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena due to their charge stability and robust electronic properties after thermal cycling. However these devices require a large top-gate which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here we demonstrate rf reflectometry is possible in an undoped SET. △ Less

Submitted 7 January, 2014; v1 submitted 19 December, 2013; originally announced December 2013.

Comments: Four pages, three figures, one supplementary file

A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor

Authors: A. M. See, O. Klochan, A. P. Micolich, M. Aagesen, P. E. Lindelof, A. R. Hamilton

Abstract: We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependence of these features indicate the couplings between the leads and t… ▽ More We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependence of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin, and the interference effects that arise from coherent tunneling of electrons in the dot. △ Less

Submitted 17 October, 2013; originally announced October 2013.

The Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots

Authors: A. M. See, I. Pilgrim, B. C. Scannell, R. D. Montgomery, O. Klochan, A. M. Burke, M. Aagesen, P. E. Lindelof, I. Farrer, D. A. Ritchie, R. P. Taylor, A. R. Hamilton, A. P. Micolich

Abstract: Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential, and tha… ▽ More Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential, and that by removing the ionized dopants and populating the dot electrostatically, its electronic properties become reproducible with high fidelity after thermal cycling to room temperature. Our work demonstrates that the disorder potential has a significant, perhaps even dominant, influence on the electron dynamics, with important implications for `ballistic' transport in quantum dots. △ Less

Submitted 31 March, 2012; originally announced April 2012.

Comments: In press for Phys. Rev. Lett

Journal ref: Physical Review Letters 108, 196807 (2012)

Fabrication of undoped AlGaAs/GaAs electron quantum dots

Authors: Andrew M. See, Oleh Klochan, Adam P. Micolich, Alex R. Hamilton, Martin. Aagesen, Poul Erik Lindelof

Abstract: We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation do**. Our device is very stable from an electronic perspective, with clear Coulomb blockade oscillations, and minimal drift in conductance when the device is set to the midpoint of a Coulomb blockade peak and held at constant gate bias. Bias spectroscopy measurements show ty… ▽ More We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation do**. Our device is very stable from an electronic perspective, with clear Coulomb blockade oscillations, and minimal drift in conductance when the device is set to the midpoint of a Coulomb blockade peak and held at constant gate bias. Bias spectroscopy measurements show typical Coulomb 'diamonds' free of any significant charge fluctuation noise. We also observe excited state transport in our device. △ Less

Submitted 29 June, 2011; originally announced June 2011.

Comments: 3 pages, 5 figures, ICONN2010 conference paper

AlGaAs/GaAs single electron transistors fabricated without modulation do**

Authors: A. M. See, O. Klochan, A. R. Hamilton, A. P. Micolich, M. Aagesen, P. E. Lindelof

Abstract: We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation do**, which exhibit clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade peak lineshape is well described by standard Coulomb blockade theory in the quantum regime. Bias spectroscopy measurements have allowed us to directly extract th… ▽ More We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation do**, which exhibit clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade peak lineshape is well described by standard Coulomb blockade theory in the quantum regime. Bias spectroscopy measurements have allowed us to directly extract the charging energy, and showed clear evidence of excited state transport, confirming that individual quantum states in the dot can be resolved. △ Less

Submitted 28 February, 2010; originally announced March 2010.

Comments: 4 pages, 4 figures

The role of background impurities in the single particle relaxation lifetime of a two-dimensional electron gas

Authors: S. J. MacLeod, K. Chan, T. P. Martin, A. R. Hamilton, A. See, A. P. Micolich, M. Aagesen, P. E. Lindelof

Abstract: We re-examine the quantum tau_q and transport tau_t scattering lifetimes due to background impurities in two-dimensional systems. We show that the well-known logarithmic divergence in the quantum lifetime is due to the non-physical assumption of an infinitely thick heterostructure, and demonstrate that the existing non-divergent multiple scattering theory can lead to unphysical quantum scatterin… ▽ More We re-examine the quantum tau_q and transport tau_t scattering lifetimes due to background impurities in two-dimensional systems. We show that the well-known logarithmic divergence in the quantum lifetime is due to the non-physical assumption of an infinitely thick heterostructure, and demonstrate that the existing non-divergent multiple scattering theory can lead to unphysical quantum scattering lifetimes in high quality heterostructures. We derive a non-divergent scattering lifetime for finite thickness structures, which can be used both with lowest order perturbation theory and the multiple scattering theory. We calculate the quantum and transport lifetimes for electrons in generic GaAs-AlGaAs heterostructures, and find that the correct `rule of thumb' to distinguish the dominant scattering mechanisms in GaAs heterostructures should be tau_t/tau_q < 10 for background impurities and tau_t/tau_q > 10 for remote impurities. Finally we present the first comparison of theoretical results for tau_q and tau_t with experimental data from a GaAs 2DEG in which only background impurity scattering is present. We obtain excellent agreement between the calculations and experimental data, and are able to extract the background impurity density in both the GaAs and AlGaAs regions. △ Less

Submitted 23 June, 2009; originally announced June 2009.

Comments: Revtex4, 8 pages, 6 figures

Journal ref: Physical Review B 80, 035310 (2009)

Critical and excess current through an open quantum dot: Temperature and magnetic field dependence

Authors: H. Ingerslev Jørgensen, K. Grove-Rasmussen, K. Flensberg, P. E. Lindelof

Abstract: We present measurements of temperature and magnetic field dependence of the critical current and excess current in a carbon nanotube Josephson quantum dot junction. The junction is fabricated in a controlled environment which allows for extraction of the full critical current. The measurements are performed in the open quantum dot regime, and fitted to theory with good qualitative agreement. We… ▽ More We present measurements of temperature and magnetic field dependence of the critical current and excess current in a carbon nanotube Josephson quantum dot junction. The junction is fabricated in a controlled environment which allows for extraction of the full critical current. The measurements are performed in the open quantum dot regime, and fitted to theory with good qualitative agreement. We also show how to extract level spacing, level broadening, and charging energy of an open quantum dot from a bias spectroscopy plot. △ Less

Submitted 22 December, 2008; originally announced December 2008.

Journal ref: Phys. Rev. B 79, 155441 (2009)

Superconductivity-enhanced bias spectroscopy in carbon nanotube quantum dots

Authors: K. Grove-Rasmussen, H. I. Jørgensen, B. M. Andersen, J. Paaske, T. S. Jespersen, J. Nygård, K. Flensberg, P. E. Lindelof

Abstract: We study low-temperature transport through carbon nanotube quantum dots in the Coulomb blockade regime coupled to niobium-based superconducting leads. We observe pronounced conductance peaks at finite source-drain bias, which we ascribe to elastic and inelastic cotunneling processes enhanced by the coherence peaks in the density of states of the superconducting leads. The inelastic cotunneling l… ▽ More We study low-temperature transport through carbon nanotube quantum dots in the Coulomb blockade regime coupled to niobium-based superconducting leads. We observe pronounced conductance peaks at finite source-drain bias, which we ascribe to elastic and inelastic cotunneling processes enhanced by the coherence peaks in the density of states of the superconducting leads. The inelastic cotunneling lines display a marked dependence on the applied gate voltage which we relate to different tunneling-renormalizations of the two subbands in the nanotube. Finally, we discuss the origin of an especially pronounced sub-gap structure observed in every fourth Coulomb diamond. △ Less

Submitted 25 May, 2009; v1 submitted 11 September, 2008; originally announced September 2008.

Journal ref: Phys. Rev. B 79, 134518 (2009)

A triple quantum dot in a single wall carbon nanotube

Authors: K. Grove-Rasmussen, H. I. Jørgensen, T. Hayashi, P. E. Lindelof, T. Fujisawa

Abstract: A top-gated single wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements of single, double and triple quantum dot stability diagrams. Simulations using a capacitor model including tunnel coupling between neighboring dots captures th… ▽ More A top-gated single wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements of single, double and triple quantum dot stability diagrams. Simulations using a capacitor model including tunnel coupling between neighboring dots captures the observed behavior with good agreement. Furthermore, anti-crossings between indirectly coupled levels and higher order cotunneling are discussed. △ Less

Submitted 22 April, 2008; originally announced April 2008.

Comments: Supporting Information is available at Nano Lett. website (see link below)

Journal ref: Nano Lett. 8 (4), 1055, 2008

Gate-dependent tunneling-induced level shifts observed in carbon nanotube quantum dots

Authors: J. V. Holm, H. I. Jørgensen, K. Grove-Rasmussen, J. Paaske, K. Flensberg, P. E. Lindelof

Abstract: We have studied electron transport in clean single-walled carbon nanotube quantum dots. Because of the large number of Coulomb blockade diamonds simultaneously showing both shell structure and Kondo effect, we are able to perform a detailed analysis of tunneling renormalization effects. Thus determining the environment induced level shifts of this artificial atom. In shells where only one of the… ▽ More We have studied electron transport in clean single-walled carbon nanotube quantum dots. Because of the large number of Coulomb blockade diamonds simultaneously showing both shell structure and Kondo effect, we are able to perform a detailed analysis of tunneling renormalization effects. Thus determining the environment induced level shifts of this artificial atom. In shells where only one of the two orbitals is coupled strongly, we observe a marked asymmetric gate-dependence of the inelastic cotunneling lines together with a systematic gate dependence of the size (and shape) of the Coulomb diamonds. These effects are all given a simple explanation in terms of second-order perturbation theory in the tunnel coupling. △ Less

Submitted 27 June, 2008; v1 submitted 30 November, 2007; originally announced November 2007.

Journal ref: Phys. Rev. B 77, 161406(R) (2008)

Singlet-Triplet Physics and Shell Filling in Carbon Nanotube Double Quantum Dots

Authors: H. Ingerslev Jørgensen, K. Grove-Rasmussen, K. -Y. Wang, A. M. Blackburn, K. Flensberg, P. E. Lindelof, D. A. Williams

Abstract: An artifcial two-atomic molecule, also called a double quantum dot (DQD), is an ideal system for exploring few electron physics. Spin-entanglement between just two electrons can be explored in such systems where singlet and triplet states are accessible. These two spin-states can be regarded as the two states in a quantum two-state system, a so-called singlet-triplet qubit. A very attractive mat… ▽ More An artifcial two-atomic molecule, also called a double quantum dot (DQD), is an ideal system for exploring few electron physics. Spin-entanglement between just two electrons can be explored in such systems where singlet and triplet states are accessible. These two spin-states can be regarded as the two states in a quantum two-state system, a so-called singlet-triplet qubit. A very attractive material for realizing spin based qubits is the carbon nanotube (CNT), because it is expected to have a very long spin coherence time. Here we show the existence of a gate-tunable singlet-triplet qubit in a CNT DQD. We show that the CNT DQD has clear shell structures of both four and eight electrons, with the singlet-triplet qubit present in the four-electron shells. We furthermore observe inelastic cotunneling via the singlet and triplet states, which we use to probe the splitting between singlet and triplet, in good agreement with theory. △ Less

Submitted 21 November, 2007; originally announced November 2007.

Comments: Supplement available at: http://www.fys.ku.dk/~hij/public/singlet-triple_supp.pdf

Journal ref: Nature Physics 4, 536 - 539 (2008)

Fabry-Perot interference, Kondo effect and Coulomb blockade in carbon nanotubes

Authors: K. Grove-Rasmussen, H. I. Jørgensen, P. E. Lindelof

Abstract: High quality single wall carbon nanotube quantum dots have been made showing both metallic and semiconducting behavior. Some of the devices are identified as small band gap semiconducting nanotubes with relatively high broad conductance oscillations for hole transport through the valence band and low conductance Coulomb blockade oscillations for electron transport through the conduction band. Th… ▽ More High quality single wall carbon nanotube quantum dots have been made showing both metallic and semiconducting behavior. Some of the devices are identified as small band gap semiconducting nanotubes with relatively high broad conductance oscillations for hole transport through the valence band and low conductance Coulomb blockade oscillations for electron transport through the conduction band. The transition between these regimes illustrates that transport evolves from being wave-like transmission known as Fabry-Perot interference to single particle-like tunneling of electrons or holes. In the intermediate regime four Coulomb blockade peaks appear in each Fabry-Perot resonance, which is interpreted as entering the SU(4) Kondo regime. A bias shift of opposite polarity for the Kondo resonances for one electron and one hole in a shell is in some cases observed. △ Less

Submitted 13 November, 2007; originally announced November 2007.

Comments: Proceeding for the International workshop on Quantum Coherence, Noise and decoherence in nanostructures (DECON'06). See published version for improved figure quality

Journal ref: Physica E 40 (2007) 92-98

Electric-field controlled spin reversal in a quantum dot with ferromagnetic contacts

Authors: J. R. Hauptmann, J. Paaske, P. E. Lindelof

Abstract: Manipulation of the spin-states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin-filters, spin-transistors and single-spin memory as well as for solid-state qubits. An electrically gated quantum dot in the Coulomb blockade regime can be tuned to hold a single unpaired spin-1/2, which is rou… ▽ More Manipulation of the spin-states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin-filters, spin-transistors and single-spin memory as well as for solid-state qubits. An electrically gated quantum dot in the Coulomb blockade regime can be tuned to hold a single unpaired spin-1/2, which is routinely spin-polarized by an applied magnetic field. Using ferromagnetic electrodes, however, the properties of the quantum dot become directly spin-dependent and it has been demonstrated that the ferromagnetic electrodes induce a local exchange-field which polarizes the localized spin in the absence of any external fields. Here we report on the experimental realization of this tunneling-induced spin-splitting in a carbon nanotube quantum dot coupled to ferromagnetic nickel-electrodes. We study the intermediate coupling regime in which single-electron states remain well defined, but with sufficiently good tunnel-contacts to give rise to a sizable exchange-field. Since charge transport in this regime is dominated by the Kondo-effect, we can utilize this sharp many-body resonance to read off the local spin-polarization from the measured bias-spectroscopy. We show that the exchange-field can be compensated by an external magnetic field, thus restoring a zero-bias Kondo-resonance, and we demonstrate that the exchange-field itself, and hence the local spin-polarization, can be tuned and reversed merely by tuning the gate-voltage. This demonstrates a very direct electrical control over the spin-state of a quantum dot which, in contrast to an applied magnetic field, allows for rapid spin-reversal with a very localized addressing. △ Less

Submitted 2 November, 2007; originally announced November 2007.

Comments: 19 pages, 11 figures

Journal ref: Nature Physics 4, 373 - 376 (01 May 2008)

Critical Current 0-$π$ Transition in Designed Josephson Quantum Dot Junctions

Authors: H. Ingerslev Jørgensen, T. Novotný, K. Grove-Rasmussen, K. Flensberg, P. E. Lindelof

Abstract: We report on quantum dot based Josephson junctions designed specifically for measuring the supercurrent. From high-accuracy fitting of the current-voltage characteristics we determine the full magnitude of the supercurrent (critical current). Strong gate modulation of the critical current is observed through several consecutive Coulomb blockade oscillations. The critical current crosses zero clo… ▽ More We report on quantum dot based Josephson junctions designed specifically for measuring the supercurrent. From high-accuracy fitting of the current-voltage characteristics we determine the full magnitude of the supercurrent (critical current). Strong gate modulation of the critical current is observed through several consecutive Coulomb blockade oscillations. The critical current crosses zero close to, but not at, resonance due to the so-called 0-$π$ transition in agreement with a simple theoretical model. △ Less

Submitted 24 July, 2007; originally announced July 2007.

Comments: 5 pages, 4 figures, (Supplementary information available at http://www.fys.ku.dk/~hij/public/nl_supp.pdf)

Journal ref: NANO LETTERS 7 (8): 2441-2445 AUG 2007

Single Wall Carbon Nanotube Weak Links

Authors: Kasper Grove-Rasmussen, Henrik Ingerslev Jørgensen, Poul Erik Lindelof

Abstract: We have reproducibly contacted gated single wall carbon nanotubes (SWCNT) to superconducting leads based on niobium. The devices are identified to belong to two transparency regimes: The Coulomb blockade and the Kondo regime. Clear signature of the superconducting leads is observed in both regimes and in the Kondo regime a narrow zero bias peak interpreted as a proximity induced supercurrent per… ▽ More We have reproducibly contacted gated single wall carbon nanotubes (SWCNT) to superconducting leads based on niobium. The devices are identified to belong to two transparency regimes: The Coulomb blockade and the Kondo regime. Clear signature of the superconducting leads is observed in both regimes and in the Kondo regime a narrow zero bias peak interpreted as a proximity induced supercurrent persist in Coulomb blockade diamonds with Kondo resonances. △ Less

Submitted 13 March, 2007; originally announced March 2007.

Comments: Proceeding for International Symposium on Mesoscopic Superconductivity and Spintronics 2006, NTT BRL, Atsugi, Japan

Kondo-Enhanced Andreev Tunneling in InAs Nanowire Quantum Dots

Authors: T. Sand-Jespersen, J. Paaske, B. M. Andersen, K. Grove-Rasmussen, H. I. Jørgensen, M. Aagesen, C. Sørensen, P. E. Lindelof, K. Flensberg, J. Nygård

Abstract: We report measurements of the nonlinear conductance of InAs nanowire quantum dots coupled to superconducting leads. We observe a clear alternation between odd and even occupation of the dot, with sub-gap-peaks at $|V_{sd}|=Δ/e$ markedly stronger(weaker) than the quasiparticle tunneling peaks at $|V_{sd}|=2Δ/e$ for odd(even) occupation. We attribute the enhanced $Δ$-peak to an interplay between K… ▽ More We report measurements of the nonlinear conductance of InAs nanowire quantum dots coupled to superconducting leads. We observe a clear alternation between odd and even occupation of the dot, with sub-gap-peaks at $|V_{sd}|=Δ/e$ markedly stronger(weaker) than the quasiparticle tunneling peaks at $|V_{sd}|=2Δ/e$ for odd(even) occupation. We attribute the enhanced $Δ$-peak to an interplay between Kondo-correlations and Andreev tunneling in dots with an odd number of spins, and substantiate this interpretation by a poor man's scaling analysis. △ Less

Submitted 10 March, 2007; originally announced March 2007.

Journal ref: Phys. Rev. Lett. 99, 126603 (2007)

Single-electron transport driven by surface acoustic waves: moving quantum dots versus short barriers

Authors: P. Utko, J. Bindslev Hansen, P. E. Lindelof, C. B. Sorensen, K. Gloos

Abstract: We have investigated the response of the acoustoelectric current driven by a surface-acoustic wave through a quantum point contact in the closed-channel regime. Under proper conditions, the current develops plateaus at integer multiples of ef when the frequency f of the surface-acoustic wave or the gate voltage Vg of the point contact is varied. A pronounced 1.1 MHz beat period of the current in… ▽ More We have investigated the response of the acoustoelectric current driven by a surface-acoustic wave through a quantum point contact in the closed-channel regime. Under proper conditions, the current develops plateaus at integer multiples of ef when the frequency f of the surface-acoustic wave or the gate voltage Vg of the point contact is varied. A pronounced 1.1 MHz beat period of the current indicates that the interference of the surface-acoustic wave with reflected waves matters. This is supported by the results obtained after a second independent beam of surface-acoustic wave was added, traveling in opposite direction. We have found that two sub-intervals can be distinguished within the 1.1 MHz modulation period, where two different sets of plateaus dominate the acoustoelectric-current versus gate-voltage characteristics. In some cases, both types of quantized steps appeared simultaneously, though at different current values, as if they were superposed on each other. Their presence could result from two independent quantization mechanisms for the acoustoelectric current. We point out that short potential barriers determining the properties of our nominally long constrictions could lead to an additional quantization mechanism, independent from those described in the standard model of 'moving quantum dots'. △ Less

Submitted 9 November, 2006; originally announced November 2006.

Comments: 25 pages, 12 figures, to be published in a special issue of J. Low Temp. Phys. in honour of Prof. F. Pobell

Different quantization mechanisms in single-electron pumps driven by surface acoustic waves

Authors: P. Utko, K. Gloos, J. Bindslev Hansen, C. B. Sorensen, P. E. Lindelof

Abstract: We have studied the acoustoelectric current in single-electron pumps driven by surface acoustic waves. We have found that in certain parameter ranges two different sets of quantized steps dominate the acoustoelectric current versus gate-voltage characteristics. In some cases, both types of quantized steps appear simultaneously though at different current values, as if they were superposed on eac… ▽ More We have studied the acoustoelectric current in single-electron pumps driven by surface acoustic waves. We have found that in certain parameter ranges two different sets of quantized steps dominate the acoustoelectric current versus gate-voltage characteristics. In some cases, both types of quantized steps appear simultaneously though at different current values, as if they were superposed on each other. This could indicate two independent quantization mechanisms for the acoustoelectric current. △ Less

Submitted 8 November, 2006; originally announced November 2006.

Comments: 6 pages, 3 figures

Journal ref: Acta Phys. Pol. A 110, 403-408 (2006)

Kondo physics in tunable semiconductor nanowire quantum dots

Authors: T. S. Jespersen, M. Aagesen, C. Soerensen, P. E. Lindelof, J. Nygaard

Abstract: We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, and contacted by titanium leads. The device transparency can be tuned by changing the potential on a gate electrode, and for increasing transparencies the effects dominating the transport changes from Coulomb Blockade to… ▽ More We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, and contacted by titanium leads. The device transparency can be tuned by changing the potential on a gate electrode, and for increasing transparencies the effects dominating the transport changes from Coulomb Blockade to Universal Conductance Fluctuations with Kondo physics appearing in the intermediate region. △ Less

Submitted 22 August, 2006; originally announced August 2006.

Comments: 4 pages, 4 figures

Single wall carbon nanotube double quantum dot

Authors: H. I. Jørgensen, K. Grove-Rasmussen, J. R. Hauptmann, P. E. Lindelof

Abstract: We report on two top-gate defined, coupled quantum dots in a semiconducting single wall carbon nanotube, constituting a tunable double quantum dot system. The single wall carbon nanotubes are contacted by titanium electrodes, and gated by three narrow top-gate electrodes as well as a back-gate. We show that a bias spectroscopy plot on just one of the two quantum dots can be used to extract the a… ▽ More We report on two top-gate defined, coupled quantum dots in a semiconducting single wall carbon nanotube, constituting a tunable double quantum dot system. The single wall carbon nanotubes are contacted by titanium electrodes, and gated by three narrow top-gate electrodes as well as a back-gate. We show that a bias spectroscopy plot on just one of the two quantum dots can be used to extract the addition energy of both quantum dots. Furthermore, honeycomb charge stability diagrams are analyzed by an electrostatic capacitor model that includes cross capacitances, and we extract the coupling energy of the double quantum dot. △ Less

Submitted 7 December, 2006; v1 submitted 14 June, 2006; originally announced June 2006.

Comments: Published in Applied Physics Letters 4 December 2006. http://link.aip.org/link/?APL/89/232113

Journal ref: Appl. Phys. Lett. 89, 232113 (2006)

Kondo resonance enhanced supercurrent in single wall carbon nanotube Josephson junctions

Authors: K. Grove-Rasmussen, H. Ingerslev Jørgensen, P. E. Lindelof

Abstract: We have contacted single wall carbon nanotubes grown by chemical vapor deposition to superconducting Ti/Al/Ti electrodes. The device, we here report on is in the Kondo regime exhibiting a four-fold shell structure, where a clear signature of the superconducting electrodes is observed below the critical temperature. Multiple Andreev reflections are revealed by sub-gap structure and a narrow peak… ▽ More We have contacted single wall carbon nanotubes grown by chemical vapor deposition to superconducting Ti/Al/Ti electrodes. The device, we here report on is in the Kondo regime exhibiting a four-fold shell structure, where a clear signature of the superconducting electrodes is observed below the critical temperature. Multiple Andreev reflections are revealed by sub-gap structure and a narrow peak in the differential conductance around zero bias is seen depending on the shell filling. We interpret the peak as a proximity induced supercurrent and examine its interplay with Kondo resonances. △ Less

Submitted 10 May, 2007; v1 submitted 17 January, 2006; originally announced January 2006.

Comments: 4 figures

Journal ref: New Journal of Physics 9 (2007) 124 (http://www.iop.org/EJ/abstract/1367-2630/9/5/124)

Electron transport in single wall carbon nanotube weak links in the Fabry-Perot regime

Authors: H. I. Jørgensen, K. Grove-Rasmussen, T. Novotný, K. Flensberg, P. E. Lindelof

Abstract: We fabricated reproducible high transparency superconducting contacts consisting of superconducting Ti/Al/Ti trilayers to gated single-walled carbon nanotubes (SWCNTs). The reported semiconducting SWCNT have normal state differential conductance up to $3e^2/h$ and exhibit clear Fabry-Perot interference patterns in the bias spectroscopy plot. We observed subharmonic gap structure in the different… ▽ More We fabricated reproducible high transparency superconducting contacts consisting of superconducting Ti/Al/Ti trilayers to gated single-walled carbon nanotubes (SWCNTs). The reported semiconducting SWCNT have normal state differential conductance up to $3e^2/h$ and exhibit clear Fabry-Perot interference patterns in the bias spectroscopy plot. We observed subharmonic gap structure in the differential conductance and a distinct peak in the conductance at zero bias which is interpreted as a manifestation of a supercurrent. The gate dependence of this supercurrent as well as the excess current are examined and compared to a coherent theory of superconducting point contacts with good agreement. △ Less

Submitted 16 March, 2006; v1 submitted 7 October, 2005; originally announced October 2005.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. Lett. 96, 207003 (2006)

An improved 2.5 GHz electron pump: single-electron transport through shallow-etched point contacts driven by surface acoustic waves

Authors: P. Utko, K. Gloos, J. B. Hansen, P. E. Lindelof

Abstract: We present an experimental study of a 2.5 GHz electron pump based on the quantized acoustoelectric current driven by surface acoustic waves (SAWs) through a shallow-etched point contact in a GaAs/AlGaAs heterostructure. At low temperatures and with an additional counter-propagating SAW beam, up to n = 20 current plateaus at I=nef could be resolved, where n is an integer, e the electron charge, a… ▽ More We present an experimental study of a 2.5 GHz electron pump based on the quantized acoustoelectric current driven by surface acoustic waves (SAWs) through a shallow-etched point contact in a GaAs/AlGaAs heterostructure. At low temperatures and with an additional counter-propagating SAW beam, up to n = 20 current plateaus at I=nef could be resolved, where n is an integer, e the electron charge, and f the SAW frequency. In the best case the accuracy of the first plateau at 0.40 nA was estimated to be dI/I = +/- 25 ppm over 0.25 mV in gate voltage, which is better than previous results. △ Less

Submitted 4 November, 2003; originally announced November 2003.

Comments: 11 pages, 4 figures

Journal ref: Acta Phys. Pol. A 103 (6): 533-538 June 2003

Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

Authors: B. Sorensen, J. Sadowski, R. Mathieu, P. Svedlindh, P. E. Lindelof

Abstract: We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 nm and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As - GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows addit… ▽ More We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 nm and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As - GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin. △ Less

Submitted 17 December, 2002; originally announced December 2002.

Comments: 9 pages, 3 figures

Journal ref: Appl. Phys. Lett. 82, 2287 (2003)

Dependence of Curie Temperature on the Thickness of Epitaxial (Ga,Mn)As Film

Authors: B. S. Sorensen, J. sadowski, S. E. Andresen, P. E. Lindelof

Abstract: We present the magnetotransport properties of very thin (5 to 15 nm) single (Ga,Mn)As layers grown by low temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the ferromagnetic phase and the dependence of the Curie temperature on (Ga,Mn)As thickness are determined from electrical transport measurements. The Curie temperature is determined to be 97 K for the thinnest… ▽ More We present the magnetotransport properties of very thin (5 to 15 nm) single (Ga,Mn)As layers grown by low temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the ferromagnetic phase and the dependence of the Curie temperature on (Ga,Mn)As thickness are determined from electrical transport measurements. The Curie temperature is determined to be 97 K for the thinnest ferromagnetic sample and is found to decrease for increasing layer thickness. A carrier density of ~7.1$\times10^{20}$ cm$^{-3}$ for the 5 nm thick (Ga,Mn)As layer is determined from Hall measurements. Differences between magnetotransport properties of thick and thin (Ga,Mn)As layers are observed and discussed. △ Less

Submitted 22 October, 2002; originally announced October 2002.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 66, 233313 (2002)

Magnetization of ultrathin (Ga,Mn)As layers

Authors: R. Mathieu, B. S. Sørensen, J. Sadowski, U. Södervall, J. Kanski, P. Svedlindh, P. E. Lindelof, D. Hrabovsky, E. Vanelle

Abstract: Kerr rotation and Superconducting QUantum Interference Device (SQUID) magnetometry measurements were performed on ultrathin (Ga$_{0.95}$Mn$_{0.05}$)As layers. The thinner layers (below 250 Å) exhibit magnetic properties different than those of thicker ones, associated with different microstructure, and some degree of inhomogeneity. The temperature dependence of the field-cooled-magnetization of… ▽ More Kerr rotation and Superconducting QUantum Interference Device (SQUID) magnetometry measurements were performed on ultrathin (Ga$_{0.95}$Mn$_{0.05}$)As layers. The thinner layers (below 250 Å) exhibit magnetic properties different than those of thicker ones, associated with different microstructure, and some degree of inhomogeneity. The temperature dependence of the field-cooled-magnetization of the layers is recorded after successive low temperature annealings. While the Curie temperature of the thicker layer (250 Å) is nearly unchanged, the critical temperature of the thinner layers is enhanced by more than 23 K after two annealings. Secondary Ion Mass Spectrometry (SIMS) experiments on similar layers show that Mn is displaced upon annealing. The results are discussed considering a possible segregation of substitutional and interstitial Mn atoms at the surface of the (Ga,Mn)As layers. △ Less

Submitted 9 October, 2003; v1 submitted 21 August, 2002; originally announced August 2002.

Comments: REVTeX 4 style; 5 pages, 4 figures; revised 25/2; revised 25/7 and accepted for publication

Journal ref: Phys. Rev. B 68, 184421 (2003).

On the two-dimensional metallic state in silicon-on-insulator structures

Authors: G. Brunthaler, A. Prinz, G. Pillwein, P. E. Lindelof, J. Ahopelto

Abstract: It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility versus density, the strong drop in resistivity and the critical concentration for the metal-insulator transition are all consistent. On the basis of our SOI data f… ▽ More It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility versus density, the strong drop in resistivity and the critical concentration for the metal-insulator transition are all consistent. On the basis of our SOI data for the temperature and in-plane magnetic field dependence of the resistivity, we discuss several models for the metallic state in two dimensions. We find that the observed behavior can be well described by the theory on the interaction corrections in the ballistic regime. For the investigated regime, the temperature dependent screening of scattering potentials gives also a good description of the data. △ Less

Submitted 5 July, 2002; originally announced July 2002.

Comments: 15 pages, 19 figures

Dilation of the Giant Vortex State in a Mesoscopic Superconducting Loop

Authors: S. Pedersen, G. R. Kofod, J. C. Hollingbery, C. B. Sørensen, P. E. Lindelof

Abstract: We have experimentally investigated the magnetisation of a mesoscopic aluminum loop at temperatures well below the superconducting transition temperature $T_{c}$. The flux quantisation of the superconducting loop was investigated with a $μ$-Hall magnetometer in magnetic field intensities between $\pm 100 {Gauss}$. The magnetic field intensity periodicity observed in the magnetization measurement… ▽ More We have experimentally investigated the magnetisation of a mesoscopic aluminum loop at temperatures well below the superconducting transition temperature $T_{c}$. The flux quantisation of the superconducting loop was investigated with a $μ$-Hall magnetometer in magnetic field intensities between $\pm 100 {Gauss}$. The magnetic field intensity periodicity observed in the magnetization measurements is expected to take integer values of the superconducting flux quanta $Φ_{0}=h/2e$. A closer inspection of the periodicity, however, reveal a sub flux quantum shift. This fine structure we interpret as a consequence of a so called giant vortex state nucleating towards either the inner or the outer side of the loop. These findings are in agreement with recent theoretical reports. △ Less

Submitted 11 July, 2001; originally announced July 2001.

Comments: 12 pages, 5 figures. Accepted for publication in Phys. Rev. B

Mesoscopic decoherence in Aharonov-Bohm rings

Authors: A. E. Hansen, A. Kristensen, S. Pedersen, C. B. Sorensen, P. E. Lindelof

Abstract: We study electron decoherence by measuring the temperature dependence of Aharonov-Bohm (AB) oscillations in quasi-1D rings, etched in a high-mobility GaAs/GaAlAs heterostructure. The oscillation amplitude is influenced both by phase-breaking and by thermal averaging. Thermal averaging is important when the temperature approaches the energy scale, on which the AB oscillations shift their phase. F… ▽ More We study electron decoherence by measuring the temperature dependence of Aharonov-Bohm (AB) oscillations in quasi-1D rings, etched in a high-mobility GaAs/GaAlAs heterostructure. The oscillation amplitude is influenced both by phase-breaking and by thermal averaging. Thermal averaging is important when the temperature approaches the energy scale, on which the AB oscillations shift their phase. For the phase-breaking, it is demonstrated that the dam** of the oscillation amplitude is proportional to the length of the interfering paths. For temperatures $T$ from 0.3 to 4 $\rm K$ we find the phase coherence length $\it L_φ$ $\propto$ $T^{-1}$, close to what has been reported for open quantum dots. This might indicate that the $T^{-1}$ decoherence rate is a general property of open and ballistic mesoscopic systems. △ Less

Submitted 8 May, 2001; v1 submitted 6 February, 2001; originally announced February 2001.

Comments: 5 pages, 4 figures; to appear in Phys. Rev. B

Kondo physics in carbon nanotubes

Authors: Jesper Nygard, David Henry Cobden, Poul Erik Lindelof

Abstract: The connection of electrical leads to wire-like molecules is a logical step in the development of molecular electronics, but also allows studies of fundamental physics. For example, metallic carbon nanotubes are quantum wires that have been found to act as one-dimensional quantum dots, Luttinger-liquids, proximity-induced superconductors and ballistic and diffusive one-dimensional metals. Here w… ▽ More The connection of electrical leads to wire-like molecules is a logical step in the development of molecular electronics, but also allows studies of fundamental physics. For example, metallic carbon nanotubes are quantum wires that have been found to act as one-dimensional quantum dots, Luttinger-liquids, proximity-induced superconductors and ballistic and diffusive one-dimensional metals. Here we report that electrically-contacted single-wall nanotubes can serve as powerful probes of Kondo physics, demonstrating the universality of the Kondo effect. Arising in the prototypical case from the interaction between a localized impurity magnetic moment and delocalized electrons in a metallic host, the Kondo effect has been used to explain enhanced low-temperature scattering from magnetic impurities in metals, and also occurs in transport through semiconductor quantum dots. The far higher tunability of dots (in our case, nanotubes) compared with atomic impurities renders new classes of Kondo-like effects accessible. Our nanotube devices differ from previous systems in which Kondo effects have been observed, in that they are one-dimensional quantum dots with three-dimensional metal (gold) reservoirs. This allows us to observe Kondo resonances for very large electron number (N) in the dot, and approaching the unitary limit (where the transmission reaches its maximum possible value). Moreover, we detect a previously unobserved Kondo effect, occurring for even values of N in a magnetic field. △ Less

Submitted 17 November, 2000; originally announced November 2000.

Comments: 7 pages, pdf only

Journal ref: Nature 408, 342-6 (2000)

Bias and temperature dependence of the 0.7 conductance anomaly in Quantum Point Contacts

Authors: A. Kristensen, H. Bruus, A. E. Hansen, J. B. Jensen, P. E. Lindelof, C. J. Marckmann, J. Nygard, C. B. Sorensen, F. Beuscher, A. Forchel, M. Michel

Abstract: The 0.7 (2e^2/h) conductance anomaly is studied in strongly confined, etched GaAs/GaAlAs quantum point contacts, by measuring the differential conductance as a function of source-drain and gate bias as well as a function of temperature. We investigate in detail how, for a given gate voltage, the differential conductance depends on the finite bias voltage and find a so-called self-gating effect,… ▽ More The 0.7 (2e^2/h) conductance anomaly is studied in strongly confined, etched GaAs/GaAlAs quantum point contacts, by measuring the differential conductance as a function of source-drain and gate bias as well as a function of temperature. We investigate in detail how, for a given gate voltage, the differential conductance depends on the finite bias voltage and find a so-called self-gating effect, which we correct for. The 0.7 anomaly at zero bias is found to evolve smoothly into a conductance plateau at 0.85 (2e^2/h) at finite bias. Varying the gate voltage the transition between the 1.0 and the 0.85 (2e^2/h) plateaus occurs for definite bias voltages, which defines a gate voltage dependent energy difference $Δ$. This energy difference is compared with the activation temperature T_a extracted from the experimentally observed activated behavior of the 0.7 anomaly at low bias. We find Δ= k_B T_a which lends support to the idea that the conductance anomaly is due to transmission through two conduction channels, of which the one with its subband edge Δbelow the chemical potential becomes thermally depopulated as the temperature is increased. △ Less

Submitted 3 May, 2000; originally announced May 2000.

Comments: 9 pages (RevTex) with 9 figures (some in low resolution)

Journal ref: Phys. Rev. B 62, 10950 - 10957 (2000)

Investigation of the Mesoscopic Aharonov-Bohm effect in Low Magnetic Fields

Authors: A. E. Hansen, S. Pedersen, A. Kristensen, C. B. Sorensen, P. E. Lindelof

Abstract: We have investigated the Aharonov-Bohm effect in mesoscopic semiconductor GaAs/GaAlAs rings in low magnetic fields. The oscillatory magnetoconductance of these systems is systematically studied as a function of electron density. We observe phase-shifts of $π$ in the magnetoconductance oscillations, and halving of the fundamental $h/e$ period, as the density is varied. Theoretically we find agree… ▽ More We have investigated the Aharonov-Bohm effect in mesoscopic semiconductor GaAs/GaAlAs rings in low magnetic fields. The oscillatory magnetoconductance of these systems is systematically studied as a function of electron density. We observe phase-shifts of $π$ in the magnetoconductance oscillations, and halving of the fundamental $h/e$ period, as the density is varied. Theoretically we find agreement with the experiment, by introducing an asymmetry between the two arms of the ring. △ Less

Submitted 16 September, 1999; originally announced September 1999.

Comments: 4 pages, 4 figures; to appear in Physica E (proceedings of MSS9)

Observation of supercurrent enhancement in SNS junctions by non-equilibrium injection into supercurrent carrying bound Andreev states

Authors: Jonatan Kutchinsky, Rafael Taboryski, Claus B. Sorensen, Jorn Bindslev Hansen, Poul Erik Lindelof

Abstract: We report for the first time enhancement of the supercurrent by means of injection in a mesoscopic three terminal planar SNSNS device made of Al on GaAs. When a current is injected from one of the superconducting Al electrodes at an injection bias $V=Δ(T)/e$, the DC Josephson current between the other two superconducting electrodes has a maximum, giving evidence for an enhancement due to a non-e… ▽ More We report for the first time enhancement of the supercurrent by means of injection in a mesoscopic three terminal planar SNSNS device made of Al on GaAs. When a current is injected from one of the superconducting Al electrodes at an injection bias $V=Δ(T)/e$, the DC Josephson current between the other two superconducting electrodes has a maximum, giving evidence for an enhancement due to a non-equilibrium injection into bound Andreev states of the underlying semiconductor. The effect persists to temperatures where the equilibrium supercurrent has vanished. △ Less

Submitted 28 September, 1999; v1 submitted 30 July, 1999; originally announced July 1999.

Comments: 7 pages + 3 figures. Resubmitted to Phys. Rev. Lett. Contents changed

Weak localisation in AlGaAs/GaAs p-type quantum wells

Authors: S. Pedersen, C. B. Sorensen, A. Kristensen, P. E. Lindelof, L. E. Golub, N. S. Averkiev

Abstract: We have for the first time experimentally investigated the weak localisation magnetoresistance in a AlGaAs/GaAs p-type quantum well. The peculiarity of such systems is that spin-orbit interaction is strong. On the theoretical side it is not possible to treat the spin-orbit interaction as a perturbation. This is in contrast to all prior investigations of weak localisation. In this letter we compa… ▽ More We have for the first time experimentally investigated the weak localisation magnetoresistance in a AlGaAs/GaAs p-type quantum well. The peculiarity of such systems is that spin-orbit interaction is strong. On the theoretical side it is not possible to treat the spin-orbit interaction as a perturbation. This is in contrast to all prior investigations of weak localisation. In this letter we compare the experimental results with a newly developed diffusion theory, which explicitly describes the weak localisation regime when the spin-orbit coupling is strong. The spin relaxation rates calculated from the fitting parameters was found to agree with theoretical expectations. Furthermore the fitting parameters indicate an enhanced phase breaking rate compared to theoretical predictions. △ Less

Submitted 1 June, 1999; v1 submitted 5 May, 1999; originally announced May 1999.

Comments: 4 Pages, 5 figures, accepted for publication in PRB

Observation of Quantum Asymmetry in an Aharonov-Bohm Ring

Authors: S. Pedersen, A. E. Hansen, A. Kristensen, C. B. Soerensen, P. E. Lindelof

Abstract: We have investigated the Aharonov-Bohm effect in a one-dimensional GaAs/GaAlAs ring at low magnetic fields. The oscillatory magnetoconductance of these systems are for the first time systematically studied as a function of density. We observe phase-shifts of $π$ in the magnetoconductance oscillations, and halving of the fundamental $h/e$ period, as the density is varied. Theoretically we find ag… ▽ More We have investigated the Aharonov-Bohm effect in a one-dimensional GaAs/GaAlAs ring at low magnetic fields. The oscillatory magnetoconductance of these systems are for the first time systematically studied as a function of density. We observe phase-shifts of $π$ in the magnetoconductance oscillations, and halving of the fundamental $h/e$ period, as the density is varied. Theoretically we find agreement with the experiment, by introducing an asymmetry between the two arms of the ring. △ Less

Submitted 10 May, 1999; v1 submitted 4 May, 1999; originally announced May 1999.

Comments: 4 pages RevTex including 3 figures, submitted to Phys. Rev. B

Multiple Andreev reflections in diffusive SNS structures

Authors: Rafael Taboryski, Jonatan Kutchinsky, Jorn Bindslev Hansen, Morten Wildt, Claus B. Sorensen, Poul Erik Lindelof

Abstract: We report new measurements on sup-gap energy structure originating from multiple Andreev reflections in mesoscopic SNS junctions. The junctions were fabricated in a planar geometry with high transparency superconducting contacts of Al deposited on highly diffusive and surface d-doped n++-GaAs. For samples with a normal GaAs region of active length 0.3um the Josephson effect with a maximal superc… ▽ More We report new measurements on sup-gap energy structure originating from multiple Andreev reflections in mesoscopic SNS junctions. The junctions were fabricated in a planar geometry with high transparency superconducting contacts of Al deposited on highly diffusive and surface d-doped n++-GaAs. For samples with a normal GaAs region of active length 0.3um the Josephson effect with a maximal supercurrent Ic=3mA at T=237mK was observed. The sub-gap structure was observed as a series of local minima in the differential resistance at dc bias voltages V=2D/ne with n=1,2,4 i.e. only the even sub-gap positions. While at V=2D/e (n=1) only one dip is observed, the n=2, and the n=4 sub-gap structures each consists of two separate dips in the differential resistance. The mutual spacing of these two dips is independent of temperature, and the mutual spacing of the n=4 dips is half of the spacing of the n=2 dips. The voltage bias positions of the sub-gap differential resistance minima coincide with the maxima in the oscillation amplitude when a magnetic field is applied in an interferometer configuration, where one of the superconducting electrodes has been replaced by a flux sensitive open loop. △ Less

Submitted 15 January, 1999; v1 submitted 14 January, 1999; originally announced January 1999.

Comments: 20 pages, 7 figures

Activated Behavior of the 0.7 2(e^2)/h Conductance Anomaly in Quantum Point Contacts

Authors: A. Kristensen, H. Bruus, A. Forchel, J. B. Jensen, P. E. Lindelof, M. Michel, J. Nygard, C. B. Sorensen

Abstract: The 0.7 conductance anomaly in the quantized conductance of trench etched GaAs quantum point contacts is studied experimentally. The temperature dependence of the anomaly measured with vanishing source-drain bias reveals the same activated behavior as reported earlier for top-gated structures. Our main result is that the zero bias, high temperature 0.7 anomaly found in activation measurements an… ▽ More The 0.7 conductance anomaly in the quantized conductance of trench etched GaAs quantum point contacts is studied experimentally. The temperature dependence of the anomaly measured with vanishing source-drain bias reveals the same activated behavior as reported earlier for top-gated structures. Our main result is that the zero bias, high temperature 0.7 anomaly found in activation measurements and the finite bias, low temperature 0.9 anomaly found in transport spectroscopy have the same origin: a density dependent excitation gap. △ Less

Submitted 5 August, 1998; v1 submitted 2 August, 1998; originally announced August 1998.

Comments: 4 pages (RevTex), 5 postscript figures added, Contributed paper for ICPS24, Jerusalem, August 2-7, 1998

Temperature dependence of the ``0.7'' 2(e^2)/h quasi plateau in strongly confined quantum point contacts

Authors: A. Kristensen, P. E. Lindelof, J. B. Jensen, M. Zaffalon, J. Hollingbery, S. W. Pedersen, J. Nygard, H. Bruus, S. M. Reimann, C. B. Sorensen M. Michel, A. Forchel

Abstract: We present new results of the ``0.7'' 2(e^2)/h structure or quasi plateau in some of the most strongly confined point contacts so far reported. This strong confinement is obtained by a combination of shallow etching and metal gate deposition on modulation doped GaAs/GaAlAs heterostructures. The resulting subband separations are up to 20 meV, and as a consequence the quantized conductance can be… ▽ More We present new results of the ``0.7'' 2(e^2)/h structure or quasi plateau in some of the most strongly confined point contacts so far reported. This strong confinement is obtained by a combination of shallow etching and metal gate deposition on modulation doped GaAs/GaAlAs heterostructures. The resulting subband separations are up to 20 meV, and as a consequence the quantized conductance can be followed at temperatures up to 30 K, an order of magnitude higher than in conventional split gate devices. We observe pronounced quasi plateaus at several of the lowest conductance steps all the way from their formation around 1 K to 30 K, where the entire conductance quantization is smeared out thermally. We study the deviation of the conductance from ideal integer quantization as a function of temperature, and we find an activated behavior, exp(-T_a/T), with a density dependent activation temperature T_a of the order of 2 K. We analyze our results in terms of a simple theoretical model involving scattering against plasmons in the constriction. △ Less

Submitted 20 July, 1998; originally announced July 1998.

Comments: RevTex (4 pages) including 2 postscript figures. To appear in Physica B, 1998

Journal ref: Physica B 249-251, 180 (1998)

Periodic magnetoconductance fluctuations in triangular quantum dots in the absence of selective probing

Authors: Peter Boggild, Anders Kristensen, Henrik Bruus, Stephanie M. Reimann, Poul Erik Lindelof

Abstract: We have studied the magnetoconductance of quantum dots with triangular symmetry and areas down to 0.2 square microns, made in a high mobility two-dimensional electron gas embedded in a GaAs-AlGaAs heterostructure. Semiclassical simulations show that the gross features in the measured magnetoconductance are caused by ballistic effects. Below 1 K we observe a strong periodic oscillation, which may… ▽ More We have studied the magnetoconductance of quantum dots with triangular symmetry and areas down to 0.2 square microns, made in a high mobility two-dimensional electron gas embedded in a GaAs-AlGaAs heterostructure. Semiclassical simulations show that the gross features in the measured magnetoconductance are caused by ballistic effects. Below 1 K we observe a strong periodic oscillation, which may be explained in terms of the Aharanov-Bohm flux quantization through the area of a single classical periodic orbit. From a numerical and analytical analysis of possible trajectories in hard- and soft-walled potentials, we identify this periodic orbit as the enscribed triangle. Contrary to other recent experiments, this orbit is not accessible by classical processes for the incoming collimated beam. △ Less

Submitted 14 July, 1998; originally announced July 1998.

Comments: RevTex 8 pages, including 5 postscript figures

Journal ref: Phys. Rev. B 57, 15408 (1998)

Spin Splitting and Weak Localization in (110) GaAs/AlGaAs Quantum Wells

Authors: T. Hassenkam, S. Pedersen, K. Baklanov, A. Kristensen, C. B. Sorensen, P. E. Lindelof, F. G. Pikus, G. E. Pikus

Abstract: We investigate experimentally and theoretically the spin-orbit effects on the weak localization in a (110) GaAs 2-dimensional electron gas (2DEG). We analyze the role of two different terms in the spin splitting of the conduction band: the Dresselhaus terms, which arise due to the lack of inversion center in the bulk GaAs, and the Rashba terms, which are caused by the asymmetry of the quantum we… ▽ More We investigate experimentally and theoretically the spin-orbit effects on the weak localization in a (110) GaAs 2-dimensional electron gas (2DEG). We analyze the role of two different terms in the spin splitting of the conduction band: the Dresselhaus terms, which arise due to the lack of inversion center in the bulk GaAs, and the Rashba terms, which are caused by the asymmetry of the quantum well. It is shown that in A3B5 quantum wells the magnetoresistance due to the weak localization depends qualitatively on the orientation of the well. In particular, it is demonstrated that the (110) geometry has a distinctive feature that in the absence of the Rashba terms the ``antilocalization'' effect, i.e. the positive magnetoresistance, does not exist. Calculation of the weak anti-localization magnetoresistance is found to be in excellent agreement with experiments. △ Less

Submitted 23 August, 1996; originally announced August 1996.

Comments: 4 pages (RevTex), 1 PostScript figure, uses epsf.sty

Magnetoresistance of a 2-dimensional electron gas in a random magnetic field

Authors: Anders Smith, Rafael Taboryski, Luise Theil Hansen, Claus B. Sorensen, Per Hedegard, P. E. Lindelof

Abstract: We report magnetoresistance measurements on a two-dimensional electron gas (2DEG) made from a high mobility GaAs/AlGaAs heterostructure, where the externally applied magnetic field was expelled from regions of the semiconductor by means of superconducting lead grains randomly distributed on the surface of the sample. A theoretical explanation in excellent agreement with the experiment is given w… ▽ More We report magnetoresistance measurements on a two-dimensional electron gas (2DEG) made from a high mobility GaAs/AlGaAs heterostructure, where the externally applied magnetic field was expelled from regions of the semiconductor by means of superconducting lead grains randomly distributed on the surface of the sample. A theoretical explanation in excellent agreement with the experiment is given within the framework of the semiclassical Boltzmann equation. △ Less

Submitted 25 July, 1994; originally announced July 1994.

Comments: REVTEX 3.0, 11 pages, 3 Postscript figures appended. The manuscript can also be obtained from our World Wide Web server: http://roemer.fys.ku.dk/randmag.htm