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Electron Holographic Map** of Structural and Electronic Reconstruction at Mono- and Bilayer Steps of h-BN
Authors:
Subakti Subakti,
Mohammadreza Daqiqshirazi,
Daniel Wolf,
Martin Linck,
Felix L. Kern,
Mitisha Jain,
Silvan Kretschmer,
Arkady V. Krasheninnikov,
Thomas Brumme,
Axel Lubk
Abstract:
Here, by making use of medium and high resolution autocorrected off-axis electron holography, we directly probe the electrostatic potential as well as in-plane and out-of-plane charge delocalization at edges and steps in multilayer hexagonal boron nitride. In combination with ab-initio calculations, the data allows to directly reveal the formation of out-of-plane covalent bonds at folded zig-zag e…
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Here, by making use of medium and high resolution autocorrected off-axis electron holography, we directly probe the electrostatic potential as well as in-plane and out-of-plane charge delocalization at edges and steps in multilayer hexagonal boron nitride. In combination with ab-initio calculations, the data allows to directly reveal the formation of out-of-plane covalent bonds at folded zig-zag edges and steps comprising two monolayers and the absence of which at monolayer steps. The technique paves the way for studying other charge (de)localization phenomena in 2D materials, e.g., at polar edges, topological edge states and defects.
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Submitted 8 October, 2022;
originally announced October 2022.
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Autocorrected Off-axis Holography of 2D Materials
Authors:
Felix Kern,
Martin Linck,
Daniel Wolf,
Nasim Alem,
Himani Arora,
Sibylle Gemming,
Artur Erbe,
Alex Zettl,
Bernd Büchner,
Axel Lubk
Abstract:
The reduced dimensionality in two-dimensional materials leads a wealth of unusual properties, which are currently explored for both fundamental and applied sciences. In order to study the crystal structure, edge states, the formation of defects and grain boundaries, or the impact of adsorbates, high resolution microscopy techniques are indispensible. Here we report on the development of an electro…
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The reduced dimensionality in two-dimensional materials leads a wealth of unusual properties, which are currently explored for both fundamental and applied sciences. In order to study the crystal structure, edge states, the formation of defects and grain boundaries, or the impact of adsorbates, high resolution microscopy techniques are indispensible. Here we report on the development of an electron holography (EH) transmission electron microscopy (TEM) technique, which facilitates high spatial resolution by an automatic correction of geometric aberrations. Distinguished features of EH beyond conventional TEM imaging are the gap-free spatial information signal transfer and higher dose efficiency for certain spatial frequency bands as well as direct access to the projected electrostatic potential of the 2D material. We demonstrate these features at the example of h-BN, at which we measure the electrostatic potential as a function of layer number down to the monolayer limit and obtain evidence for a systematic increase of the potential at the zig-zag edges.
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Submitted 25 June, 2020; v1 submitted 24 June, 2020;
originally announced June 2020.
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Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering
Authors:
J. -H. Chen,
G. Autès,
N. Alem,
F. Gargiulo,
A. Gautam,
M. Linck,
C. Kisielowski,
O. V. Yazyev,
S. G. Louie,
A. Zettl
Abstract:
Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of…
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Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated "valley valve" device, a critical component for valleytronics.
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Submitted 3 June, 2014;
originally announced June 2014.
