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Electrically Sign-Reversible Topological Hall Effect in a Top-Gated Topological Insulator (Bi,Sb)2Te3 on a Ferrimagnetic Insulator Europium Iron Garnet
Authors:
Jyun-Fong Wong,
Ko-Hsuan Mandy Chen,
Jui-Min Chia,
Zih-** Huang,
Sheng-Xin Wang,
Pei-Tze Chen,
Lawrence Boyu Young,
Yen-Hsun Glen Lin,
Shang-Fan Lee,
Chung-Yu Mou,
Minghwei Hong,
Jueinai Kwo
Abstract:
Topological Hall effect (THE), an electrical transport signature of systems with chiral spin textures like skyrmions, has been observed recently in topological insulator (TI)-based magnetic heterostructures. However, the intriguing interplay between the topological surface state and THE is yet to be fully understood. In this work, we report a large THE of ~10 ohm (~4 micro-ohm*cm) at 2 K with an e…
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Topological Hall effect (THE), an electrical transport signature of systems with chiral spin textures like skyrmions, has been observed recently in topological insulator (TI)-based magnetic heterostructures. However, the intriguing interplay between the topological surface state and THE is yet to be fully understood. In this work, we report a large THE of ~10 ohm (~4 micro-ohm*cm) at 2 K with an electrically reversible sign in a top-gated 4 nm TI (Bi0.3Sb0.7)2Te3 (BST) grown on a ferrimagnetic insulator (FI) europium iron garnet (EuIG). Temperature, external magnetic field angle, and top gate bias dependences of magnetotransport properties were investigated and consistent with a skyrmion-driven THE. Most importantly, a sign change in THE was discovered as the Fermi level was tuned from the upper to the lower parts of the gapped Dirac cone and vice versa. This discovery is anticipated to impact technological applications in ultralow power skyrmion-based spintronics.
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Submitted 13 April, 2023; v1 submitted 31 December, 2022;
originally announced January 2023.
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Enormous Berry-Curvature-Driven Anomalous Hall Effect in Topological Insulator (Bi,Sb)2Te3 on Ferrimagnetic Europium Iron Garnet beyond 400 K
Authors:
Wei-Jhih Zou,
Meng-Xin Guo,
Jyun-Fong Wong,
Zih-** Huang,
Jui-Min Chia,
Wei-Nien Chen,
Sheng-Xin Wang,
Keng-Yung Lin,
Lawrence Boyu Young,
Yen-Hsun Glen Lin,
Mohammad Yahyavi,
Chien-Ting Wu,
Horng-Tay Jeng,
Shang-Fan Lee,
Tay-Rong Chang,
Minghwei Hong,
Jueinai Kwo
Abstract:
To realize the quantum anomalous Hall effect (QAHE) at elevated temperatures, the approach of magnetic proximity effect (MPE) was adopted to break the time-reversal symmetry in the topological insulator (Bi0.3Sb0.7)2Te3 (BST) based heterostructures with a ferrimagnetic insulator europium iron garnet (EuIG) of perpendicular magnetic anisotropy. Here we demonstrate phenomenally large anomalous Hall…
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To realize the quantum anomalous Hall effect (QAHE) at elevated temperatures, the approach of magnetic proximity effect (MPE) was adopted to break the time-reversal symmetry in the topological insulator (Bi0.3Sb0.7)2Te3 (BST) based heterostructures with a ferrimagnetic insulator europium iron garnet (EuIG) of perpendicular magnetic anisotropy. Here we demonstrate phenomenally large anomalous Hall resistance (RAHE) exceeding 8 Ω (\r{ho}AHE of 3.2 μΩ*cm) at 300 K and sustaining to 400 K in 35 BST/EuIG samples, surpassing the past record of 0.28 Ω (\r{ho}AHE of 0.14 μΩ*cm) at 300 K. The remarkably large RAHE as attributed to an atomically abrupt, Fe-rich interface between BST and EuIG. Importantly, the gate dependence of the AHE loops shows no sign change with varying chemical potential. This observation is supported by our first-principles calculations via applying a gradient Zeeman field plus a contact potential on BST. Our calculations further demonstrate that the AHE in this heterostructure is attributed to the intrinsic Berry curvature. Furthermore, for gate-biased 4 nm BST on EuIG, a pronounced topological Hall effect (THE) coexisting with AHE is observed at the negative top-gate voltage up to 15 K. Interface tuning with theoretical calculations has opened up new opportunities to realize topologically distinct phenomena in tailored magnetic TI-based heterostructures.
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Submitted 30 September, 2021; v1 submitted 30 March, 2021;
originally announced March 2021.
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NbS$_{3}$: A unique quasi one-dimensional conductor with three charge density wave transitions
Authors:
S. G. Zybtsev,
V. Ya. Pokrovskii,
V. F. Nasretdinova,
S. V. Zaitsev-Zotov,
V. V. Pavlovskiy,
A. B. Odobesco,
Woei Wu Pai,
M. -W. Chu,
Y. G. Lin,
E. Zupanič,
H. J. P. van Midden,
S. Šturm,
E. Tchernychova,
A. Prodan,
J. C. Bennett,
I. R. Mukhamedshin,
O. V. Chernysheva,
A. P. Menushenkov,
V. B. Loginov,
B. A. Loginov,
A. N. Titov,
Mahmoud Abdel-Hafiez
Abstract:
Through transport, compositional and structural studies, we review the features of the charge-density wave (CDW) conductor of NbS$_{3}$ (phase II). We highlight three central results: 1) In addition to the previously reported CDW transitions at $T_{P1}$ = 360\,K and $T_{P2}$ = 150\,K, another CDW transition occurs at a much higher temperature $T_{P0}$ = 620-650\,K; evidence for the non-linear cond…
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Through transport, compositional and structural studies, we review the features of the charge-density wave (CDW) conductor of NbS$_{3}$ (phase II). We highlight three central results: 1) In addition to the previously reported CDW transitions at $T_{P1}$ = 360\,K and $T_{P2}$ = 150\,K, another CDW transition occurs at a much higher temperature $T_{P0}$ = 620-650\,K; evidence for the non-linear conductivity of this CDW is presented. 2) We show that CDW associated with the $T_{P2}$ - transition arises from S vacancies acting as donors. Such a CDW transition has not been observed before. 3) We show exceptional coherence of the $T_{P1}$-CDW at room-temperature. Additionally, we report on the effects of uniaxial strain on the CDW transition temperatures and transport.
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Submitted 30 June, 2016;
originally announced June 2016.
