The GRB 071112C: A Case Study of Different Mechanisms in X-ray and Optical Temporal Evolution
Authors:
K. Y. Huang,
Y. Urata,
Y. H. Tung,
H. M. Lin,
L. P. Xin,
M. Yoshida,
W. Zheng,
C. Akerlof,
S. Y. Wang,
W. H. Ip,
M. J. Lehner,
F. B. Bianco,
N. Kawai,
D. Kuroda,
S. L. Marshall,
M. E. Schwamb,
Y. Qiu,
J. H. Wang,
C. Y. Wen,
J. Wei,
K. Yanagisawa,
Z. W. Zhang
Abstract:
We present the study on GRB 071112C X-ray and optical light curves. In these two wavelength ranges, we have found different temporal properties. The R-band light curve showed an initial rise followed by a single power-law decay, while the X-ray light curve was described by a single power-law decay plus a flare-like feature. Our analysis shows that the observed temporal evolution cannot be describe…
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We present the study on GRB 071112C X-ray and optical light curves. In these two wavelength ranges, we have found different temporal properties. The R-band light curve showed an initial rise followed by a single power-law decay, while the X-ray light curve was described by a single power-law decay plus a flare-like feature. Our analysis shows that the observed temporal evolution cannot be described by the external shock model in which the X-ray and optical emission are produced by the same emission mechanism. No significant color changes in multi-band light curves and a reasonable value of the initial Lorentz factor (Γ0 = 275 \pm 20) in a uniform ISM support the afterglow onset scenario as the correct interpretation for the early R-band rise. The result suggests the optical flux is dominated by afterglow. Our further investigations show that the X-ray flux could be created by an additional feature related to energy injection and X-ray afterglow. Different theoretical interpretations indicate the additional feature in X-ray can be explained by either late internal dissipation or local inverse-Compton scattering in the external shock.
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Submitted 7 February, 2012;
originally announced February 2012.
Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire
Authors:
S. Dhara,
A. Datta,
C. T. Wu,
Z. H. Lan,
K. H. Chen,
Y. L. Wang,
C. W. Hsu,
L. C. Chen,
H. M. Lin,
C. C. Chen,
Y. F. Chen
Abstract:
Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor-acceptor pair (DAP) model with emission involving shallow donor introduc…
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Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor-acceptor pair (DAP) model with emission involving shallow donor introduced by point-defect clusters related to nitrogen vacancies and probable deep acceptor created by gallium interstitial clusters is made responsible for the shift. High temperature annealing in nitrogen ambient restores the peak position of YL band by removing nitrogen vacancies.
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Submitted 2 February, 2004;
originally announced February 2004.
