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Artificial Intelligence Enables Real-Time and Intuitive Control of Prostheses via Nerve Interface
Authors:
Diu Khue Luu,
Anh Tuan Nguyen,
Ming Jiang,
Markus W. Drealan,
Jian Xu,
Tong Wu,
Wing-kin Tam,
Wenfeng Zhao,
Brian Z. H. Lim,
Cynthia K. Overstreet,
Qi Zhao,
Jonathan Cheng,
Edward W. Keefer,
Zhi Yang
Abstract:
Objective: The next generation prosthetic hand that moves and feels like a real hand requires a robust neural interconnection between the human minds and machines. Methods: Here we present a neuroprosthetic system to demonstrate that principle by employing an artificial intelligence (AI) agent to translate the amputee's movement intent through a peripheral nerve interface. The AI agent is designed…
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Objective: The next generation prosthetic hand that moves and feels like a real hand requires a robust neural interconnection between the human minds and machines. Methods: Here we present a neuroprosthetic system to demonstrate that principle by employing an artificial intelligence (AI) agent to translate the amputee's movement intent through a peripheral nerve interface. The AI agent is designed based on the recurrent neural network (RNN) and could simultaneously decode six degree-of-freedom (DOF) from multichannel nerve data in real-time. The decoder's performance is characterized in motor decoding experiments with three human amputees. Results: First, we show the AI agent enables amputees to intuitively control a prosthetic hand with individual finger and wrist movements up to 97-98% accuracy. Second, we demonstrate the AI agent's real-time performance by measuring the reaction time and information throughput in a hand gesture matching task. Third, we investigate the AI agent's long-term uses and show the decoder's robust predictive performance over a 16-month implant duration. Conclusion & significance: Our study demonstrates the potential of AI-enabled nerve technology, underling the next generation of dexterous and intuitive prosthetic hands.
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Submitted 16 March, 2022;
originally announced March 2022.
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Selective area epitaxy of GaAs films using patterned graphene on Ge
Authors:
Zheng Hui Lim,
Sebastian Manzo,
Patrick J. Strohbeen,
Vivek Saraswat,
Michael S. Arnold,
Jason K. Kawasaki
Abstract:
We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. The GaAs selectively grows on exposed regions of the Ge substrate, for graphene spacings as large as 10 microns. The selectivity is highly dependent on the growth temperature and annealing time, which we explain in terms of temperature dependent sticking coefficients and surface diffusion. T…
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We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. The GaAs selectively grows on exposed regions of the Ge substrate, for graphene spacings as large as 10 microns. The selectivity is highly dependent on the growth temperature and annealing time, which we explain in terms of temperature dependent sticking coefficients and surface diffusion. The high nucleation selectivity over several microns sets constraints on experimental realizations of remote epitaxy.
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Submitted 1 November, 2021;
originally announced November 2021.
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Effect of Buffer Termination on Intermixing and Conductivity in LaTiO$_3$/SrTiO$_3$ Heterostructures Integrated on Si(100)
Authors:
Tongjie Chen,
Kamyar Ahmadi-Majlan,
Zheng Hui Lim,
Zhan Zhang,
Joseph H. Ngai,
Divine . P. Kumah
Abstract:
The control of chemical exchange across heterointerfaces formed between ultra-thin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. We show that cationic exchange across the interface between the Mott insulator, LaTiO$_3$(LTO) grown epitaxially on SrTiO$_3$(STO)-buffered Silicon by molecular beam epitaxy depends strongly…
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The control of chemical exchange across heterointerfaces formed between ultra-thin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. We show that cationic exchange across the interface between the Mott insulator, LaTiO$_3$(LTO) grown epitaxially on SrTiO$_3$(STO)-buffered Silicon by molecular beam epitaxy depends strongly on the surface termination of the strained STO buffer. Using a combination of temperature-dependent transport and synchrotron X-ray crystal truncation rods and reciprocal space map**, an enhanced conductivity in STO/LTO/SrO- terminated STO buffers compared to heterostructures with TiO$_2$-terminated STO buffers is correlated with La/Sr exchange and the formation of metallic La$_{1-x}$Sr$_x$TiO$_3$. La/Sr exchange effectively reduces the strain energy of the system due to the large lattice mismatch between the nominal oxide layers and the Si substrate.
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Submitted 17 September, 2021;
originally announced September 2021.
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A multi-stop time-of-flight spectrometer for the measurement of positron annihilation-induced electrons in coincidence with the Doppler-shifted annihilation gamma photon
Authors:
V. A. Chirayath,
R. W. Gladen,
A. D. McDonald,
A. J. Fairchild,
P. V. Joglekar,
S. Satyal,
Z. H. Lim,
T. N. Shead,
M. D. Chrysler,
S. Mukherjee,
B. M. Barnett,
N. K. Byrnes,
A. R. Koymen,
R. G. Greaves,
A. H. Weiss
Abstract:
Here we describe an advanced multi functional, variable-energy positron beam system capable of measuring the energies of multiple positron-induced electrons in coincidence with the Doppler-shifted gamma photon resulting from the annihilation of the correlated positron. The measurements were carried out using the unique characteristics of the digital time-of-flight spectrometer and the gamma spectr…
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Here we describe an advanced multi functional, variable-energy positron beam system capable of measuring the energies of multiple positron-induced electrons in coincidence with the Doppler-shifted gamma photon resulting from the annihilation of the correlated positron. The measurements were carried out using the unique characteristics of the digital time-of-flight spectrometer and the gamma spectrometer available with the advanced positron beam system. These measurements have resulted in (i) the first digital time of flight spectrum of positron annihilation-induced Auger electrons generated using coincident signals from a high-purity Ge detector and a micro-channel plate; (ii) a two-dimensional array of the energy of Doppler-broadened annihilation gamma and the time of flight of positron-annihilation induced Auger electrons or secondary electrons measured in coincidence with the annihilation gamma photon; and (iii) the time of flight spectra of multiple secondary electrons ejected from a bilayer graphene surface as a result of the impact and(or) annihilation of positrons. The novelty of the gamma electron coincidence spectroscopy has been demonstrated by extracting the Doppler-broadened spectrum of gamma photons emitted due to the annihilation of positrons exclusively with 1s electrons of carbon. The width of the extracted Doppler-broadened gamma spectrum has been found to be consistent with the expected broadening of the annihilation gamma spectrum due to the momentum of the 1s electrons in carbon.
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Submitted 27 January, 2020;
originally announced January 2020.
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I4U Submission to NIST SRE 2018: Leveraging from a Decade of Shared Experiences
Authors:
Kong Aik Lee,
Ville Hautamaki,
Tomi Kinnunen,
Hitoshi Yamamoto,
Koji Okabe,
Ville Vestman,
**g Huang,
Guohong Ding,
Hanwu Sun,
Anthony Larcher,
Rohan Kumar Das,
Haizhou Li,
Mickael Rouvier,
Pierre-Michel Bousquet,
Wei Rao,
Qing Wang,
Chunlei Zhang,
Fahimeh Bahmaninezhad,
Hector Delgado,
Jose Patino,
Qiongqiong Wang,
Ling Guo,
Takafumi Koshinaka,
Jiacen Zhang,
Koichi Shinoda
, et al. (21 additional authors not shown)
Abstract:
The I4U consortium was established to facilitate a joint entry to NIST speaker recognition evaluations (SRE). The latest edition of such joint submission was in SRE 2018, in which the I4U submission was among the best-performing systems. SRE'18 also marks the 10-year anniversary of I4U consortium into NIST SRE series of evaluation. The primary objective of the current paper is to summarize the res…
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The I4U consortium was established to facilitate a joint entry to NIST speaker recognition evaluations (SRE). The latest edition of such joint submission was in SRE 2018, in which the I4U submission was among the best-performing systems. SRE'18 also marks the 10-year anniversary of I4U consortium into NIST SRE series of evaluation. The primary objective of the current paper is to summarize the results and lessons learned based on the twelve sub-systems and their fusion submitted to SRE'18. It is also our intention to present a shared view on the advancements, progresses, and major paradigm shifts that we have witnessed as an SRE participant in the past decade from SRE'08 to SRE'18. In this regard, we have seen, among others, a paradigm shift from supervector representation to deep speaker embedding, and a switch of research challenge from channel compensation to domain adaptation.
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Submitted 15 April, 2019;
originally announced April 2019.
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Charge transfer and tunable built-in electric fields across semiconductor-crystalline oxide interfaces
Authors:
Zheng Hui Lim,
Nicholas F. Quackenbush,
Aubrey Penn,
Matthew Chrysler,
Mark Bowden,
Zihua Zhu,
James M. Ablett,
Tien-lin Lee,
James M. LeBeau,
Joseph C. Woicik,
Peter V. Sushko,
Scott A. Chambers,
Joseph H. Ngai
Abstract:
Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich setting in which built-in fields can be explored. Here, we present an electrical transport and hard X-ray photoelectron spectroscopy study of epitaxial SrNbxTi1-xO3-δ…
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Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich setting in which built-in fields can be explored. Here, we present an electrical transport and hard X-ray photoelectron spectroscopy study of epitaxial SrNbxTi1-xO3-δ / Si heterojunctions. A non-monotonic anomaly in the sheet resistance is observed near room temperature, which is accompanied by a crossover in sign of the Hall resistance. The crossover is consistent with the formation of a hole gas in the Si and the presence of a built-in field. Hard X-ray photoelectron spectroscopy measurements reveal pronounced asymmetric features in both the SrNbxTi1-xO3-δ and Si core-level spectra that we show arise from built-in fields. The extended probe depth of hard X-ray photoelectron spectroscopy enables band bending across the SrNbxTi1-xO3-δ / Si heterojunction to be spatially mapped. Band alignment at the interface and surface depletion in SrNbxTi1-xO3-δ are implicated in the formation of the hole gas and built-in fields. Control of charge transfer and built-in electric fields across semiconductor-crystalline oxide interfaces opens a pathway to novel functional heterojunctions.
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Submitted 10 October, 2018;
originally announced October 2018.
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Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge
Authors:
Tongjie Chen,
Kamyar Ahmadi-Majlan,
Zheng Hui Lim,
Zhan Zhang,
Joseph H. Ngai,
Alexander F. Kemper,
Divine P. Kumah
Abstract:
The interfacial structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films grown on semiconducting Ge substrates are investigated by synchrotron X-ray diffraction and first-principles density functional theory. By systematically tuning Zr content x, the effects of bonding at the interface and epitaxial strain on the physical structure of the film can be distinguished. The interfacial perovskite layers are found…
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The interfacial structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films grown on semiconducting Ge substrates are investigated by synchrotron X-ray diffraction and first-principles density functional theory. By systematically tuning Zr content x, the effects of bonding at the interface and epitaxial strain on the physical structure of the film can be distinguished. The interfacial perovskite layers are found to be polarized as a result of cation-anion ionic displacements perpendicular to the perovskite/semiconductor interface. We find a correlation between the observed buckling and valence band offsets at the SrZr$_{x}$Ti$_{1-x}$O$_3$/Ge interface. The theoretical valence band offsets for the polar structures are in agreement with reported X-ray photoelectron spectroscopy measurements. These results have important implications for the integration of functional oxide materials with established semiconductor based technologies.
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Submitted 28 June, 2018;
originally announced June 2018.
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Atomic layer control of metal-insulator behavior in oxide quantum wells integrated directly on silicon
Authors:
Kamyar Ahmadi-Majlan,
Tong-Jie Chen,
Zheng Hui Lim,
Patrick Conlin,
Ricky Hensley,
Dong Su,
Hanghui Chen,
Divine P. Kumah,
Joseph H. Ngai
Abstract:
We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 quantum wells integrated directly on Si(100). The quantum wells exhibit metallic transport described by Fermi-liquid behavior. Carriers arise from both charge transfer from the LaTiO3 to SrTiO3 and oxygen vacancies in the latter. By reducing the thickness of the quantum wells, an enhancement in carrier-carrier scatter…
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We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 quantum wells integrated directly on Si(100). The quantum wells exhibit metallic transport described by Fermi-liquid behavior. Carriers arise from both charge transfer from the LaTiO3 to SrTiO3 and oxygen vacancies in the latter. By reducing the thickness of the quantum wells, an enhancement in carrier-carrier scattering is observed, and insulating transport emerges. Consistent with a Mott-driven transition in bulk rare-earth titanates, the insulating behavior is described by activated transport, and the onset of insulating transport occurs near 1 electron per Ti occupation within the SrTiO3 well. We also discuss the role that structure and gradients in strain may play in enhancing the carrier density. The manipulation of metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.
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Submitted 24 October, 2017;
originally announced October 2017.
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Detection of Gravitational Wave - An Application of Relativistic Quantum Information Theory
Authors:
Ye Yeo,
Chee Leong Ching,
Jeremy Chong,
Wee Kang Chua,
Andreas Dewanto,
Zhi Han Lim
Abstract:
We show that a passing gravitational wave may influence the spin entropy and spin negativity of a system of $N$ massive spin-1/2 particles, in a way that is characteristic of the radiation. We establish the specific conditions under which this effect may be nonzero. The change in spin entropy and negativity, however, is extremely small. Here, we propose and show that this effect may be amplified…
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We show that a passing gravitational wave may influence the spin entropy and spin negativity of a system of $N$ massive spin-1/2 particles, in a way that is characteristic of the radiation. We establish the specific conditions under which this effect may be nonzero. The change in spin entropy and negativity, however, is extremely small. Here, we propose and show that this effect may be amplified through entanglement swap**. Relativistic quantum information theory may have a contribution towards the detection of gravitational wave.
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Submitted 16 May, 2006;
originally announced May 2006.
