Showing 1–32 of 32 results for author: Lim, W H

Entangling gates on degenerate spin qubits dressed by a global field

Authors: Ingvild Hansen, Amanda E. Seedhouse, Santiago Serrano, Andreas Nickl, MengKe Feng, Jonathan Y. Huang, Tuomo Tanttu, Nard Dumoulin Stuyck, Wee Han Lim, Fay E. Hudson, Kohei M. Itoh, Andre Saraiva, Arne Laucht, Andrew S. Dzurak, Chih Hwan Yang

Abstract: Coherently dressed spins have shown promising results as building blocks for future quantum computers owing to their resilience to environmental noise and their compatibility with global control fields. This mode of operation allows for more amenable qubit architecture requirements and simplifies signal routing on the chip. However, multi-qubit operations, such as qubit addressability and two-qubi… ▽ More Coherently dressed spins have shown promising results as building blocks for future quantum computers owing to their resilience to environmental noise and their compatibility with global control fields. This mode of operation allows for more amenable qubit architecture requirements and simplifies signal routing on the chip. However, multi-qubit operations, such as qubit addressability and two-qubit gates, are yet to be demonstrated to establish global control in combination with dressed qubits as a viable path to universal quantum computing. Here we demonstrate simultaneous on-resonance driving of degenerate qubits using a global field while retaining addressability for qubits with equal Larmor frequencies. Furthermore, we implement SWAP oscillations during on-resonance driving, constituting the demonstration of driven two-qubit gates. Significantly, our findings highlight the fragility of entangling gates between superposition states and how dressing can increase the noise robustness. These results represent a crucial milestone towards global control operation with dressed qubits. It also opens a door to interesting spin physics on degenerate spins. △ Less

Submitted 30 November, 2023; v1 submitted 16 November, 2023; originally announced November 2023.

A singlet-triplet hole-spin qubit in MOS silicon

Authors: S. D. Liles, D. J. Halverson, Z. Wang, A. Shamim, R. S. Eggli, I. K. **, J. Hillier, K. Kumar, I. Vorreiter, M. Rendell, J. H. Huang, C. C. Escott, F. E. Hudson, W. H. Lim, D. Culcer, A. S. Dzurak, A. R. Hamilton

Abstract: Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We observe rapid qubit control with sing… ▽ More Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We observe rapid qubit control with singlet-triplet oscillations up to 400 MHz. The qubit exhibits promising coherence, with a maximum dephasing time of 600 ns, which is enhanced to 1.3 us using refocusing techniques. We investigate the magnetic field anisotropy of the eigenstates, and determine a magnetic field orientation to improve the qubit initialisation fidelity. These results present a step forward for spin qubit technology, by implementing a high quality singlet-triplet hole-spin qubit in planar architecture suitable for scaling up to 2D arrays of coupled qubits. △ Less

Submitted 14 October, 2023; originally announced October 2023.

Spatio-temporal correlations of noise in MOS spin qubits

Authors: Amanda E. Seedhouse, Nard Dumoulin Stuyck, Santiago Serrano, Tuomo Tanttu, Will Gilbert, Jonathan Yue Huang, Fay E. Hudson, Kohei M. Itoh, Arne Laucht, Wee Han Lim, Chih Hwan Yang, Andrew S. Dzurak, Andre Saraiva

Abstract: In quantum computing, characterising the full noise profile of qubits can aid the efforts towards increasing coherence times and fidelities by creating error mitigating techniques specific to the type of noise in the system, or by completely removing the sources of noise. Spin qubits in MOS quantum dots are exposed to noise originated from the complex glassy behaviour of two-level fluctuators, lea… ▽ More In quantum computing, characterising the full noise profile of qubits can aid the efforts towards increasing coherence times and fidelities by creating error mitigating techniques specific to the type of noise in the system, or by completely removing the sources of noise. Spin qubits in MOS quantum dots are exposed to noise originated from the complex glassy behaviour of two-level fluctuators, leading to non-trivial correlations between qubit properties both in space and time. With recent engineering progress, large amounts of data are being collected in typical spin qubit device experiments, and it is beneficiary to explore data analysis options inspired from fields of research that are experienced in managing large data sets, examples include astrophysics, finance and climate science. Here, we propose and demonstrate wavelet-based analysis techniques to decompose signals into both frequency and time components to gain a deeper insight into the sources of noise in our systems. We apply the analysis to a long feedback experiment performed on a state-of-the-art two-qubit system in a pair of SiMOS quantum dots. The observed correlations serve to identify common microscopic causes of noise, as well as to elucidate pathways for multi-qubit operation with a more scalable feedback system. △ Less

Submitted 24 September, 2023; v1 submitted 21 September, 2023; originally announced September 2023.

Comments: updated reference

Real-time feedback protocols for optimizing fault-tolerant two-qubit gate fidelities in a silicon spin system

Authors: Nard Dumoulin Stuyck, Amanda E. Seedhouse, Santiago Serrano, Tuomo Tanttu, Will Gilbert, Jonathan Yue Huang, Fay Hudson, Kohei M. Itoh, Arne Laucht, Wee Han Lim, Chih Hwan Yang, Andre Saraiva, Andrew S. Dzurak

Abstract: Recently, several groups have demonstrated two-qubit gate fidelities in semiconductor spin qubit systems above 99%. Achieving this regime of fault-tolerant compatible high fidelities is nontrivial and requires exquisite stability and precise control over the different qubit parameters over an extended period of time. This can be done by efficiently calibrating qubit control parameters against diff… ▽ More Recently, several groups have demonstrated two-qubit gate fidelities in semiconductor spin qubit systems above 99%. Achieving this regime of fault-tolerant compatible high fidelities is nontrivial and requires exquisite stability and precise control over the different qubit parameters over an extended period of time. This can be done by efficiently calibrating qubit control parameters against different sources of micro- and macroscopic noise. Here, we present several single- and two-qubit parameter feedback protocols, optimised for and implemented in state-of-the-art fast FPGA hardware. Furthermore, we use wavelet-based analysis on the collected feedback data to gain insight into the different sources of noise in the system. Scalable feedback is an outstanding challenge and the presented implementation and analysis gives insight into the benefits and drawbacks of qubit parameter feedback, as feedback related overhead increases. This work demonstrates a pathway towards robust qubit parameter feedback and systematic noise analysis, crucial for mitigation strategies towards systematic high-fidelity qubit operation compatible with quantum error correction protocols. △ Less

Submitted 21 September, 2023; originally announced September 2023.

Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays

Authors: Jesus D. Cifuentes, Tuomo Tanttu, Paul Steinacker, Santiago Serrano, Ingvild Hansen, James P. Slack-Smith, Will Gilbert, Jonathan Y. Huang, Ensar Vahapoglu, Ross C. C. Leon, Nard Dumoulin Stuyck, Kohei Itoh, Nikolay Abrosimov, Hans-Joachim Pohl, Michael Thewalt, Arne Laucht, Chih Hwan Yang, Christopher C. Escott, Fay E. Hudson, Wee Han Lim, Rajib Rahman, Andrew S. Dzurak, Andre Saraiva

Abstract: Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them susceptible to crosstalk from capacitive coupling between a dot and its neighbouring gates. Small but sizeable spin-orbit interactions can transfer this electros… ▽ More Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them susceptible to crosstalk from capacitive coupling between a dot and its neighbouring gates. Small but sizeable spin-orbit interactions can transfer this electrostatic crosstalk to the spin g-factors, creating a dependence of the Larmor frequency on the electric field created by gate electrodes positioned even tens of nanometers apart. By studying the Stark shift from tens of spin qubits measured in nine different CMOS devices, we developed a theoretical frawework that explains how electric fields couple to the spin of the electrons in increasingly complex arrays, including those electric fluctuations that limit qubit dephasing times $T_2^*$. The results will aid in the design of robust strategies to scale CMOS quantum technology. △ Less

Submitted 4 September, 2023; originally announced September 2023.

Comments: 9 pages, 4 figures

Methods for transverse and longitudinal spin-photon coupling in silicon quantum dots with intrinsic spin-orbit effect

Authors: Kevin S. Guo, MengKe Feng, Jonathan Y. Huang, Will Gilbert, Kohei M. Itoh, Fay E. Hudson, Kok Wai Chan, Wee Han Lim, Andrew S. Dzurak, Andre Saraiva

Abstract: In a full-scale quantum computer with a fault-tolerant architecture, having scalable, long-range interaction between qubits is expected to be a highly valuable resource. One promising method of achieving this is through the light-matter interaction between spins in semiconductors and photons in superconducting cavities. This paper examines the theory of both transverse and longitudinal spin-photon… ▽ More In a full-scale quantum computer with a fault-tolerant architecture, having scalable, long-range interaction between qubits is expected to be a highly valuable resource. One promising method of achieving this is through the light-matter interaction between spins in semiconductors and photons in superconducting cavities. This paper examines the theory of both transverse and longitudinal spin-photon coupling and their applications in the silicon metal-oxide-semiconductor (SiMOS) platform. We propose a method of coupling which uses the intrinsic spin-orbit interaction arising from orbital degeneracies in SiMOS qubits. Using theoretical analysis and experimental data, we show that the strong coupling regime is achievable in the transverse scheme. We also evaluate the feasibility of a longitudinal coupling driven by an AC modulation on the qubit. These coupling methods eschew the requirement for an external micromagnet, enhancing prospects for scalability and integration into a large-scale quantum computer. △ Less

Submitted 24 August, 2023; originally announced August 2023.

High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin

Authors: Jonathan Y. Huang, Rocky Y. Su, Wee Han Lim, MengKe Feng, Barnaby van Straaten, Brandon Severin, Will Gilbert, Nard Dumoulin Stuyck, Tuomo Tanttu, Santiago Serrano, Jesus D. Cifuentes, Ingvild Hansen, Amanda E. Seedhouse, Ensar Vahapoglu, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Christopher C. Escott, Natalia Ares, Stephen D. Bartlett, Andrea Morello, Andre Saraiva, Arne Laucht, Andrew S. Dzurak , et al. (1 additional authors not shown)

Abstract: The encoding of qubits in semiconductor spin carriers has been recognised as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale. However, the operation of the large number of qubits required for advantageous quantum applications will produce a thermal load exceeding the available cooling power of cryostats at millikelvin temperatures… ▽ More The encoding of qubits in semiconductor spin carriers has been recognised as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale. However, the operation of the large number of qubits required for advantageous quantum applications will produce a thermal load exceeding the available cooling power of cryostats at millikelvin temperatures. As the scale-up accelerates, it becomes imperative to establish fault-tolerant operation above 1 kelvin, where the cooling power is orders of magnitude higher. Here, we tune up and operate spin qubits in silicon above 1 kelvin, with fidelities in the range required for fault-tolerant operation at such temperatures. We design an algorithmic initialisation protocol to prepare a pure two-qubit state even when the thermal energy is substantially above the qubit energies, and incorporate radio-frequency readout to achieve fidelities up to 99.34 per cent for both readout and initialisation. Importantly, we demonstrate a single-qubit Clifford gate fidelity of 99.85 per cent, and a two-qubit gate fidelity of 98.92 per cent. These advances overcome the fundamental limitation that the thermal energy must be well below the qubit energies for high-fidelity operation to be possible, surmounting a major obstacle in the pathway to scalable and fault-tolerant quantum computation. △ Less

Submitted 18 August, 2023; v1 submitted 3 August, 2023; originally announced August 2023.

Journal ref: Nature 627, 772-777 (2024)

Characterizing non-Markovian Quantum Process by Fast Bayesian Tomography

Authors: R. Y. Su, J. Y. Huang, N. Dumoulin. Stuyck, M. K. Feng, W. Gilbert, T. J. Evans, W. H. Lim, F. E. Hudson, K. W. Chan, W. Huang, Kohei M. Itoh, R. Harper, S. D. Bartlett, C. H. Yang, A. Laucht, A. Saraiva, T. Tanttu, A. S. Dzurak

Abstract: To push gate performance to levels beyond the thresholds for quantum error correction, it is important to characterize the error sources occurring on quantum gates. However, the characterization of non-Markovian error poses a challenge to current quantum process tomography techniques. Fast Bayesian Tomography (FBT) is a self-consistent gate set tomography protocol that can be bootstrapped from ear… ▽ More To push gate performance to levels beyond the thresholds for quantum error correction, it is important to characterize the error sources occurring on quantum gates. However, the characterization of non-Markovian error poses a challenge to current quantum process tomography techniques. Fast Bayesian Tomography (FBT) is a self-consistent gate set tomography protocol that can be bootstrapped from earlier characterization knowledge and be updated in real-time with arbitrary gate sequences. Here we demonstrate how FBT allows for the characterization of key non-Markovian error processes. We introduce two experimental protocols for FBT to diagnose the non-Markovian behavior of two-qubit systems on silicon quantum dots. To increase the efficiency and scalability of the experiment-analysis loop, we develop an online FBT software stack. To reduce experiment cost and analysis time, we also introduce a native readout method and warm boot strategy. Our results demonstrate that FBT is a useful tool for probing non-Markovian errors that can be detrimental to the ultimate realization of fault-tolerant operation on quantum computing. △ Less

Submitted 4 October, 2023; v1 submitted 23 July, 2023; originally announced July 2023.

Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations

Authors: Santiago Serrano, MengKe Feng, Wee Han Lim, Amanda E. Seedhouse, Tuomo Tanttu, Will Gilbert, Christopher C. Escott, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Andre Saraiva, Andrew S. Dzurak, Arne Laucht

Abstract: High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we pr… ▽ More High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we present a readout technique that enhances the readout fidelity in a linear SiMOS 4-dot array by amplifying correlations between a pair of single-electron transistors, known as a twin SET. By recording and subsequently correlating the twin SET traces as we modulate the dot detuning across a charge transition, we demonstrate a reduction in the charge readout infidelity by over one order of magnitude compared to traditional readout methods. We also study the spin-to-charge conversion errors introduced by the modulation technique, and conclude that faster modulation frequencies avoid relaxation-induced errors without introducing significant spin flip errors, favouring the use of the technique at short integration times. This method not only allows for faster and higher fidelity qubit measurements, but it also enhances the signal corresponding to charge transitions that take place farther away from the sensors, enabling a way to circumvent the reduction in readout fidelities in large arrays of qubits. △ Less

Submitted 15 July, 2023; originally announced July 2023.

Journal ref: PRX QUANTUM 5, 010301 (2024)

Bounds to electron spin qubit variability for scalable CMOS architectures

Authors: Jesús D. Cifuentes, Tuomo Tanttu, Will Gilbert, Jonathan Y. Huang, Ensar Vahapoglu, Ross C. C. Leon, Santiago Serrano, Dennis Otter, Daniel Dunmore, Philip Y. Mai, Frédéric Schlattner, MengKe Feng, Kohei Itoh, Nikolay Abrosimov, Hans-Joachim Pohl, Michael Thewalt, Arne Laucht, Chih Hwan Yang, Christopher C. Escott, Wee Han Lim, Fay E. Hudson, Rajib Rahman, Andrew S. Dzurak, Andre Saraiva

Abstract: Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, co… ▽ More Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, compiling experiments in 12 devices, and develo** theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted for describing fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded and lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated. △ Less

Submitted 5 July, 2024; v1 submitted 26 March, 2023; originally announced March 2023.

Comments: 20 pages, 8 figures

Journal ref: Nat Commun 15, 4299 (2024)

Assessment of error variation in high-fidelity two-qubit gates in silicon

Authors: Tuomo Tanttu, Wee Han Lim, Jonathan Y. Huang, Nard Dumoulin Stuyck, Will Gilbert, Rocky Y. Su, MengKe Feng, Jesus D. Cifuentes, Amanda E. Seedhouse, Stefan K. Seritan, Corey I. Ostrove, Kenneth M. Rudinger, Ross C. C. Leon, Wister Huang, Christopher C. Escott, Kohei M. Itoh, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Robin Blume-Kohout, Stephen D. Bartlett, Andrea Morello, Arne Laucht, Chih Hwan Yang , et al. (2 additional authors not shown)

Abstract: Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit pro… ▽ More Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit processor, tying them to their physical origins. We leverage this knowledge to demonstrate consistent and repeatable operation with above 99% fidelity of two-qubit gates in the technologically important silicon metal-oxide-semiconductor (SiMOS) quantum dot platform. We undertake a detailed study of these operations by analysing the physical errors and fidelities in multiple devices through numerous trials and extended periods to ensure that we capture the variation and the most common error types. Physical error sources include the slow nuclear and electrical noise on single qubits and contextual noise. The identification of the noise sources can be used to maintain performance within tolerance as well as inform future device fabrication. Furthermore, we investigate the impact of qubit design, feedback systems, and robust gates on implementing scalable, high-fidelity control strategies. These results are achieved by using three different characterization methods, we measure entangling gate fidelities ranging from 96.8% to 99.8%. Our analysis tools identify the causes of qubit degradation and offer ways understand their physical mechanisms. These results highlight both the capabilities and challenges for the scaling up of silicon spin-based qubits into full-scale quantum processors. △ Less

Submitted 15 March, 2024; v1 submitted 7 March, 2023; originally announced March 2023.

Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

Authors: Ik Kyeong **, Krittika Kumar, Matthew J. Rendell, Jonathan Y. Huang, Chris C. Escott, Fay E. Hudson, Wee Han Lim, Andrew S. Dzurak, Alexander R. Hamilton, Scott D. Liles

Abstract: Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. In this work, we address… ▽ More Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. In this work, we address these problems by fabricating an ambipolar complementary metal-oxide-semiconductor (CMOS) device using multilayer palladium gates. The device consists of an electron charge sensor adjacent to a hole double quantum dot. We demonstrate control of the spin state via electric dipole spin resonance (EDSR). We achieve smooth control of the inter-dot coupling rate over two orders of magnitude and use the charge sensor to perform spin-to-charge conversion to measure the hole singlet-triplet relaxation time of 11 μs for a known hole occupation. These results provide a path towards improving the quality and controllability of hole spin-qubits. △ Less

Submitted 31 October, 2022; originally announced November 2022.

Journal ref: Nano Lett. 2023, 23, 4, 1261-1266

Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry

Authors: Zeheng Wang, MengKe Feng, Santiago Serrano, William Gilbert, Ross C. C. Leon, Tuomo Tanttu, Philip Mai, Dylan Liang, Jonathan Y. Huang, Yue Su, Wee Han Lim, Fay E. Hudson, Christopher C. Escott, Andrea Morello, Chih Hwan Yang, Andrew S. Dzurak, Andre Saraiva, Arne Laucht

Abstract: The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics can be integrated on-chip, in-between the qubits, if an architecture with sparse arrays of qubits is chosen. In such an architecture qubits are either transpor… ▽ More The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics can be integrated on-chip, in-between the qubits, if an architecture with sparse arrays of qubits is chosen. In such an architecture qubits are either transported across the chip via shuttling, or coupled via mediating quantum systems over short-to-intermediate distances. This paper investigates the charge and spin characteristics of an elongated quantum dot -- a so-called jellybean quantum dot -- for the prospects of acting as a qubit-qubit coupler. Charge transport, charge sensing and magneto-spectroscopy measurements are performed on a SiMOS quantum dot device at mK temperature, and compared to Hartree-Fock multi-electron simulations. At low electron occupancies where disorder effects and strong electron-electron interaction dominate over the electrostatic confinement potential, the data reveals the formation of three coupled dots, akin to a tunable, artificial molecule. One dot is formed centrally under the gate and two are formed at the edges. At high electron occupancies, these dots merge into one large dot with well-defined spin states, verifying that jellybean dots have the potential to be used as qubit couplers in future quantum computing architectures. △ Less

Submitted 8 August, 2022; originally announced August 2022.

On-demand electrical control of spin qubits

Authors: Will Gilbert, Tuomo Tanttu, Wee Han Lim, MengKe Feng, Jonathan Y. Huang, Jesus D. Cifuentes, Santiago Serrano, Philip Y. Mai, Ross C. C. Leon, Christopher C. Escott, Kohei M. Itoh, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Andrea Morello, Arne Laucht, Chih Hwan Yang, Andre Saraiva, Andrew S. Dzurak

Abstract: Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnet… ▽ More Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnets to artificially enhance the coupling between spins and electric field, which in turn hampers the spin's noise immunity and adds architectural complexity. Here we demonstrate a technique that enables a \emph{switchable} interaction between spins and orbital motion of electrons in silicon quantum dots, without the presence of a micromagnet. The naturally weak effects of the relativistic spin-orbit interaction in silicon are enhanced by more than three orders of magnitude by controlling the energy quantisation of electrons in the nanostructure, enhancing the orbital motion. Fast electrical control is demonstrated in multiple devices and electronic configurations, highlighting the utility of the technique. Using the electrical drive we achieve coherence time $T_{2,{\rm Hahn}}\approx50 μ$s, fast single-qubit gates with ${T_{π/2}=3}$ ns and gate fidelities of 99.93 % probed by randomised benchmarking. The higher gate speeds and better compatibility with CMOS manufacturing enabled by on-demand electric control improve the prospects for realising scalable silicon quantum processors. △ Less

Submitted 18 March, 2022; v1 submitted 17 January, 2022; originally announced January 2022.

Journal ref: Nature Nanotechnology (2023)

Coherent control of electron spin qubits in silicon using a global field

Authors: E. Vahapoglu, J. P. Slack-Smith, R. C. C. Leon, W. H. Lim, F. E. Hudson, T. Day, J. D. Cifuentes, T. Tanttu, C. H. Yang, A. Saraiva, N. V. Abrosimov, H. -J. Pohl, M. L. W. Thewalt, A. Laucht, A. S. Dzurak, J. J. Pla

Abstract: Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors. Despite the scalability advantage of using silicon technology, realising a quantum computer with the millions of qubits required to run some of the most demanding quantum algorithms poses several outstanding challenges… ▽ More Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors. Despite the scalability advantage of using silicon technology, realising a quantum computer with the millions of qubits required to run some of the most demanding quantum algorithms poses several outstanding challenges, including how to control so many qubits simultaneously. Recently, compact 3D microwave dielectric resonators were proposed as a way to deliver the magnetic fields for spin qubit control across an entire quantum chip using only a single microwave source. Although spin resonance of individual electrons in the globally applied microwave field was demonstrated, the spins were controlled incoherently. Here we report coherent Rabi oscillations of single electron spin qubits in a planar SiMOS quantum dot device using a global magnetic field generated off-chip. The observation of coherent qubit control driven by a dielectric resonator establishes a credible pathway to achieving large-scale control in a spin-based quantum computer. △ Less

Submitted 6 October, 2021; v1 submitted 30 July, 2021; originally announced July 2021.

Journal ref: npj Quantum Information 8, 126 (2022)

Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits

Authors: Andre Saraiva, Wee Han Lim, Chih Hwan Yang, Christopher C. Escott, Arne Laucht, Andrew S. Dzurak

Abstract: Quantum computers have the potential to efficiently solve problems in logistics, drug and material design, finance, and cybersecurity. However, millions of qubits will be necessary for correcting inevitable errors in quantum operations. In this scenario, electron spins in gate-defined silicon quantum dots are strong contenders for encoding qubits, leveraging the microelectronics industry know-how… ▽ More Quantum computers have the potential to efficiently solve problems in logistics, drug and material design, finance, and cybersecurity. However, millions of qubits will be necessary for correcting inevitable errors in quantum operations. In this scenario, electron spins in gate-defined silicon quantum dots are strong contenders for encoding qubits, leveraging the microelectronics industry know-how for fabricating densely populated chips with nanoscale electrodes. The sophisticated material combinations used in commercially manufactured transistors, however, will have a very different impact on the fragile qubits. We review here some key properties of the materials that have a direct impact on qubit performance and variability. △ Less

Submitted 29 July, 2021; v1 submitted 28 July, 2021; originally announced July 2021.

Comments: Review paper

A high-sensitivity charge sensor for silicon qubits above one kelvin

Authors: Jonathan Y. Huang, Wee Han Lim, Ross C. C. Leon, Chih Hwan Yang, Fay E. Hudson, Christopher C. Escott, Andre Saraiva, Andrew S. Dzurak, Arne Laucht

Abstract: Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on charge sensing with a single-island single-electron transistor (SISET) quickly lose sensitivity due to thermal broadening of the electron distribution in the reservo… ▽ More Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on charge sensing with a single-island single-electron transistor (SISET) quickly lose sensitivity due to thermal broadening of the electron distribution in the reservoirs. Here we exploit the tunneling between two quantised states in a double-island SET (DISET) to demonstrate a charge sensor with an improvement in signal-to-noise by an order of magnitude compared to a standard SISET, and a single-shot charge readout fidelity above 99 % up to 8 K at a bandwidth > 100 kHz. These improvements are consistent with our theoretical modelling of the temperature-dependent current transport for both types of SETs. With minor additional hardware overheads, these sensors can be integrated into existing qubit architectures for high fidelity charge readout at few-kelvin temperatures. △ Less

Submitted 8 June, 2021; v1 submitted 10 March, 2021; originally announced March 2021.

Journal ref: Nano Letters v12, 6328 (2021)

Single-electron spin resonance in a nanoelectronic device using a global field

Authors: E. Vahapoglu, J. P. Slack-Smith, R. C. C. Leon, W. H. Lim, F. E. Hudson, T. Day, T. Tanttu, C. H. Yang, A. Laucht, A. S. Dzurak, J. J. Pla

Abstract: Spin-based silicon quantum electronic circuits offer a scalable platform for quantum computation, combining the manufacturability of semiconductor devices with the long coherence times afforded by spins in silicon. Advancing from current few-qubit devices to silicon quantum processors with upwards of a million qubits, as required for fault-tolerant operation, presents several unique challenges, on… ▽ More Spin-based silicon quantum electronic circuits offer a scalable platform for quantum computation, combining the manufacturability of semiconductor devices with the long coherence times afforded by spins in silicon. Advancing from current few-qubit devices to silicon quantum processors with upwards of a million qubits, as required for fault-tolerant operation, presents several unique challenges, one of the most demanding being the ability to deliver microwave signals for large-scale qubit control. Here we demonstrate a potential solution to this problem by using a three-dimensional dielectric resonator to broadcast a global microwave signal across a quantum nanoelectronic circuit. Critically, this technique utilizes only a single microwave source and is capable of delivering control signals to millions of qubits simultaneously. We show that the global field can be used to perform spin resonance of single electrons confined in a silicon double quantum dot device, establishing the feasibility of this approach for scalable spin qubit control. △ Less

Submitted 10 February, 2021; v1 submitted 18 December, 2020; originally announced December 2020.

Journal ref: Science Advances 7, eabg9158 (2021)

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Authors: Will Gilbert, Andre Saraiva, Wee Han Lim, Chih Hwan Yang, Arne Laucht, Benoit Bertrand, Nils Rambal, Louis Hutin, Christopher C. Escott, Maud Vinet, Andrew S. Dzurak

Abstract: The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot formation and spin blockade in CMOS foundry-compatible devices are encouraging, but results are yet to match the control of individual electrons demonstrated in uni… ▽ More The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot formation and spin blockade in CMOS foundry-compatible devices are encouraging, but results are yet to match the control of individual electrons demonstrated in university-fabricated multi-gate designs. We show here that the charge state of quantum dots formed in a CMOS nanowire device can be sensed by using floating gates to electrostatically couple it to a remote single electron transistor (SET) formed in an adjacent nanowire. By biasing the nanowire and gates of the remote SET with respect to the nanowire hosting the quantum dots, we controllably form ancillary quantum dots under the floating gates, thus enabling the demonstration of independent control over charge transitions in a quadruple (2x2) quantum dot array. This device overcomes the limitations associated with measurements based on tunnelling transport through the dots and permits the sensing of all charge transitions, down to the last electron in each dot. We use effective mass theory to investigate the necessary optimization of the device parameters in order to achieve the tunnel rates required for spin-based quantum computation. △ Less

Submitted 24 April, 2020; originally announced April 2020.

Comments: 12 pages and 6 figures, including supplementary material

Journal ref: Nano Lett. 2020, 20, 11, 7882-7888

Charge State Hysteresis in Semiconductor Quantum Dots

Authors: C. H. Yang, A. Rossi, N. S. Lai, R. Leon, W. H. Lim, A. S. Dzurak

Abstract: Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnel… ▽ More Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch. △ Less

Submitted 7 July, 2014; originally announced July 2014.

Comments: 6 pages, 3 figures

Journal ref: Applied Physics Letters 105, 183505 (2014)

Charge Offset Stability in Si Single Electron Devices with Al Gates

Authors: Neil M. Zimmerman, Chih-Hwan Yang, Nai Shyan Lai, Wee Han Lim, Andrew S. Dzurak

Abstract: We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset… ▽ More We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset drift instability. △ Less

Submitted 29 June, 2014; originally announced June 2014.

A single-atom electron spin qubit in silicon

Authors: Jarryd J. Pla, Kuan Y. Tan, Juan P. Dehollain, Wee H. Lim, John J. L. Morton, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from f… ▽ More A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from few-qubit control to larger scale quantum processors. In this direction, coherent control of spin qubits has been achieved in lithographically-defined double quantum dots in both GaAs and Si. However, it is a formidable challenge to combine the electrical measurement capabilities of engineered nanostructures with the benefits inherent to atomic spin qubits. Here we demonstrate the coherent manipulation of an individual electron spin qubit bound to a phosphorus donor atom in natural silicon, measured electrically via single-shot readout. We use electron spin resonance to drive Rabi oscillations, while a Hahn echo pulse sequence reveals a spin coherence time (T2) exceeding 200 μs. This figure is expected to become even longer in isotopically enriched 28Si samples. Together with the use of a device architecture that is compatible with modern integrated circuit technology, these results indicate that the electron spin of a single phosphorus atom in silicon is an excellent platform on which to build a scalable quantum computer. △ Less

Submitted 20 May, 2013; originally announced May 2013.

Comments: 13 pages, 4 figures

Journal ref: Nature 489, 541 (2012)

Printed Circuit Board Metal Powder Filters for Low Electron Temperatures

Authors: Filipp Mueller, Raymond N. Schouten, Matthias Brauns, Tian Gang, Wee Han Lim, Nai Shyan Lai, Andrew S. Dzurak, Wilfred G. van der Wiel, Floris A. Zwanenburg

Abstract: We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum dot in a silicon MOSFET structure in a dilution refrigerator. We investigate the attenuation behaviour (10 MHz- 20 GHz) of filter made of four metal powders with a grain size below 50 um. The room-temperature attenuatio… ▽ More We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum dot in a silicon MOSFET structure in a dilution refrigerator. We investigate the attenuation behaviour (10 MHz- 20 GHz) of filter made of four metal powders with a grain size below 50 um. The room-temperature attenuation of a stainless steel powder filter is more than 80 dB at frequencies above 1.5 GHz. In all metal powder filters the attenuation increases with temperature. Compared to classical powder filters, the design presented here is much less laborious to fabricate and specifically the copper powder PCB-filters deliver an equal or even better performance than their classical counterparts. △ Less

Submitted 17 April, 2013; v1 submitted 11 April, 2013; originally announced April 2013.

Comments: 13 pages, 5 figures, accepted for publication in Rev. Sci. Instrum

Journal ref: Rev. Sci. Instrum. 84, 044706 (2013)

High-fidelity readout and control of a nuclear spin qubit in silicon

Authors: Jarryd J. Pla, Kuan Y. Tan, Juan P. Dehollain, Wee H. Lim, John J. L. Morton, Floris A. Zwanenburg, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus (31P) nuclear spin in a silicon nanostructure. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate the qu… ▽ More A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus (31P) nuclear spin in a silicon nanostructure. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate the quantum non-demolition, electrical single-shot readout of the nuclear spin, with readout fidelity better than 99.8% - the highest for any solid-state qubit. The single nuclear spin is then operated as a qubit by applying coherent radiofrequency (RF) pulses. For an ionized 31P donor we find a nuclear spin coherence time of 60 ms and a 1-qubit gate control fidelity exceeding 98%. These results demonstrate that the dominant technology of modern electronics can be adapted to host a complete electrical measurement and control platform for nuclear spin-based quantum information processing. △ Less

Submitted 31 January, 2013; originally announced February 2013.

Comments: 18 pages, 5 figures

Journal ref: Nature 496, 334 (2013)

Orbital and valley state spectra of a few-electron silicon quantum dot

Authors: C. H. Yang, W. H. Lim, N. S. Lai, A. Rossi, A. Morello, A. S. Dzurak

Abstract: Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra of a few-electron silicon metal-oxide-semiconductor quantum dot using dynamic charge sensing and pulsed-voltage spectroscopy. The occupancy of the quantum dot is probed down to the single-electron level using a nearby si… ▽ More Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra of a few-electron silicon metal-oxide-semiconductor quantum dot using dynamic charge sensing and pulsed-voltage spectroscopy. The occupancy of the quantum dot is probed down to the single-electron level using a nearby single-electron transistor as a charge sensor. The energy of the first orbital excited state is found to decrease rapidly as the electron occupancy increases from N=1 to 4. By monitoring the sequential spin filling of the dot we extract a valley splitting of ~230 μeV, irrespective of electron number. This indicates that favorable conditions for qubit operation are in place in the few-electron regime. △ Less

Submitted 10 October, 2012; v1 submitted 3 April, 2012; originally announced April 2012.

Comments: 4 figures

Journal ref: Phys. Rev. B 86, 115319 (2012)

Dynamically controlled charge sensing of a few-electron silicon quantum dot

Authors: C. H. Yang, W. H. Lim, F. A. Zwanenburg, A. S. Dzurak

Abstract: We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive and robust detection of the charge state of the quantum dot, even in the presence of charge drifts and random charge rearrangements. The sensor enables the occu… ▽ More We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive and robust detection of the charge state of the quantum dot, even in the presence of charge drifts and random charge rearrangements. The sensor enables the occupancy of the quantum dot to be probed down to the single electron level. △ Less

Submitted 8 July, 2011; originally announced July 2011.

Journal ref: AIP Advances 1, 042111 (2011)

Single-electron shuttle based on a silicon quantum dot

Authors: K. W. Chan, M. Mottonen, A. Kemppinen, N. S. Lai, K. Y. Tan, W. H. Lim, A. S. Dzurak

Abstract: We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead… ▽ More We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency f_p. Current plateaus at integer levels of ef_p are observed up to f_p = 240 MHz operation frequencies. The observed results are explained by a sequential tunneling model which suggests that the electron gas may be heated substantially by the ac driving voltage. △ Less

Submitted 5 October, 2011; v1 submitted 30 March, 2011; originally announced March 2011.

Journal ref: Appl. Phys. Lett. 98, 212103 (2011)

Spin filling of valley-orbit states in a silicon quantum dot

Authors: W. H. Lim, C. H. Yang, F. A. Zwanenburg, A. S. Dzurak

Abstract: We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley-orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory an… ▽ More We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley-orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory and placing a lower bound on the valley splitting. Our results provide optimism for the realization in the near future of spin qubits based on silicon quantum dots. △ Less

Submitted 7 July, 2011; v1 submitted 15 March, 2011; originally announced March 2011.

Comments: 6 pages, 4 figures, to appear in Nanotechnology

Journal ref: Nanotechnology 22, 335704 (2011)

Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot

Authors: N. S. Lai, W. H. Lim, C. H. Yang, F. A. Zwanenburg, W. A. Coish, F. Qassemi, A. Morello, A. S. Dzurak

Abstract: Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle, leading to the well-know Pauli spin blockade of electron transport for triplet states. Coherent spin states would be optimally preserved in an environment free of nu… ▽ More Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle, leading to the well-know Pauli spin blockade of electron transport for triplet states. Coherent spin states would be optimally preserved in an environment free of nuclear spins, which is achievable in silicon by isotopic purification. Here we report on a deliberately engineered, gate-defined silicon metal-oxide-semiconductor double quantum dot system. The electron occupancy of each dot and the inter-dot tunnel coupling are independently tunable by electrostatic gates. At weak inter-dot coupling we clearly observe Pauli spin blockade and measure a large intra-dot singlet-triplet splitting $>$ 1 meV. The leakage current in spin blockade has a peculiar magnetic field dependence, unrelated to electron-nuclear effects and consistent with the effect of spin-flip cotunneling processes. The results obtained here provide excellent prospects for realizing singlet-triplet qubits in silicon. △ Less

Submitted 14 April, 2011; v1 submitted 7 December, 2010; originally announced December 2010.

Comments: 6 pages, 5 figures

Journal ref: Scientific Reports 1, Article number: 110 (2011)

Probe and Control of the Reservoir Density of States in Single-Electron Devices

Authors: M. Mottonen, K. Y. Tan, K. W. Chan, F. A. Zwanenburg, W. H. Lim, C. C. Escott, J. -M. Pirkkalainen, A. Morello, C. Yang, J. A. van Donkelaar, A. D. C. Alves, D. N. Jamieson, L. C. L. Hollenberg, A. S. Dzurak

Abstract: We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window i… ▽ More We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window independently of the other device properties, and in agreement with the theoretical analysis. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures. △ Less

Submitted 5 October, 2009; originally announced October 2009.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 81, 161304 (2010)

Observation of the single-electron regime in a highly tunable silicon quantum dot

Authors: W. H. Lim, F. A. Zwanenburg, H. Huebl, M. Mottonen, K. W. Chan, A. Morello, A. S. Dzurak

Abstract: We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads, and vice versa. Appropriate gate biasing enables the dot occupancy to be redu… ▽ More We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads, and vice versa. Appropriate gate biasing enables the dot occupancy to be reduced to the single-electron level, as evidenced by magnetospectroscopy measurements of the ground state of the first two charge transitions. Independent gate control of the electron reservoirs also enables discrimination between excited states of the dot and density of states modulations in the leads. △ Less

Submitted 10 November, 2009; v1 submitted 3 October, 2009; originally announced October 2009.

Comments: 4 pages, 3 figures, accepted for Applied Physics Letters

Journal ref: Appl. Phys. Lett. 95, 242102 (2009) (3 pages)

Electrostically defined few-electron double quantum dot in silicon

Authors: W. H. Lim, H. Huebl, L. H. Willems van Beveren, S. Rubanov, P. G. Spizzirri, S. J. Angus, R. G. Clark, A. S. Dzurak

Abstract: A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tu… ▽ More A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements. △ Less

Submitted 2 April, 2009; originally announced April 2009.

Comments: 4 pages, 3 figures, accepted for Applied Physics Letters

Journal ref: Appl. Phys. Lett. 94, 173502 (2009)