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Coherent all-optical control of a solid-state spin via a double $Λ$-system
Authors:
C. Adambukulam,
J. A. Scott,
S. Q. Lim,
I. Aharonovich,
A. Morello,
A. Laucht
Abstract:
All-optical control enables fast quantum operations on color center spins that are typically realized via a single Raman transition in a $Λ$-system. Here, we simultaneously drive both Raman transitions in a double $Λ$-system to control the spin of a germanium vacancy (GeV) in diamond. In doing so, we achieve fast operations, observe the quantum interference between the two Raman transitions and pr…
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All-optical control enables fast quantum operations on color center spins that are typically realized via a single Raman transition in a $Λ$-system. Here, we simultaneously drive both Raman transitions in a double $Λ$-system to control the spin of a germanium vacancy (GeV) in diamond. In doing so, we achieve fast operations, observe the quantum interference between the two Raman transitions and probe the GeV coherence ($T_2^*=224\pm14$ ns, $T_2^{\rm H}=11.9\pm0.3$ $μ$s). Importantly, control via a double $Λ$-system is applicable to other color centers and particularly, the group-IV defects in diamond.
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Submitted 4 February, 2024; v1 submitted 31 January, 2024;
originally announced February 2024.
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Deep-level structure of the spin-active recombination center in dilute nitrides
Authors:
A. C. Ulibarri,
C. T. K. Lew,
S. Q. Lim,
J. C. McCallum,
B. C. Johnson,
J. C. Harmand,
J. Peretti,
A. C. H. Rowe
Abstract:
A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap el…
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A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap electronic structure of a $x$ = 0.021 alloy is revealed. The (+/0) state lies $\approx$ 0.27 eV below the conduction band edge, and an anomalous, negative activation energy reveals the presence of not one but \textit{two} other states in the gap. The observations are consistent with a (++/+) state $\approx$ 0.19 eV above the valence band edge, and a hitherto ignored, (+++/++) state $\approx$ 25 meV above the valence band edge. These observations can inform efforts to better model the SDR and the Ga$_{\textrm{i}}$ defect's local chemical environment.
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Submitted 1 December, 2023; v1 submitted 27 October, 2023;
originally announced October 2023.
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Millisecond electron spin coherence time for erbium ions in silicon
Authors:
Ian R. Berkman,
Alexey Lyasota,
Gabriele G. de Boo,
John G. Bartholomew,
Shao Q. Lim,
Brett C. Johnson,
Jeffrey C. McCallum,
Bin-Bin Xu,
Shouyi Xie,
Nikolay V. Abrosimov,
Hans-Joachim Pohl,
Rose L. Ahlefeldt,
Matthew J. Sellars,
Chunming Yin,
Sven Rogge
Abstract:
Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions to provide a robust system for interfacing photonic and spin qubits. Here, we report telecom-compat…
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Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions to provide a robust system for interfacing photonic and spin qubits. Here, we report telecom-compatible Er3+ sites with long optical and electron spin coherence times, measured within a nuclear spin-free silicon crystal (<0.01% 29Si) using optical detection. We investigate two sites and find 0.1 GHz optical inhomogeneous linewidths and homogeneous linewidths below 70 kHz for both sites. We measure the electron spin coherence time of both sites using optically detected magnetic resonance and observe Hahn echo decay constants of 0.8 ms and 1.2 ms at around 11 mT. These optical and spin properties of Er3+:Si are an important milestone towards using optically accessible spins in silicon for a broad range of quantum information processing applications.
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Submitted 25 July, 2023; v1 submitted 19 July, 2023;
originally announced July 2023.
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Graphene-Enhanced Single Ion Detectors for Deterministic Near-Surface Dopant Implantation in Diamond
Authors:
Nicholas F. L. Collins,
Alexander M. Jakob,
Simon G. Robson,
Shao Qi Lim,
Paul Räcke,
Brett C. Johnson,
Boqing Liu,
Yuerui Lu,
Daniel Spemann,
Jeffrey C. McCallum,
David N. Jamieson
Abstract:
Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field sensing down to the nanoscale. Some of these applications are realised with a single centre or randomly distributed ensembles in chips, but the most demanding appl…
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Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field sensing down to the nanoscale. Some of these applications are realised with a single centre or randomly distributed ensembles in chips, but the most demanding application for a large-scale quantum computer will require ordered arrays. By configuring an electronic-grade diamond substrate with a biased surface graphene electrode connected to charge-sensitive electronics, it is possible to demonstrate deterministic single ion implantation for ions stop** between 30 and 130~nm deep from a typical stochastic ion source. An implantation event is signalled by a charge pulse induced by the drift of electron-hole pairs from the ion implantation. The ion implantation site is localised with an AFM nanostencil or a focused ion beam. This allows the construction of ordered arrays of single atoms with associated colour centres that paves the way for the fabrication of deterministic colour center networks in a monolithic device.
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Submitted 14 June, 2023; v1 submitted 12 June, 2023;
originally announced June 2023.
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An Integrated Widefield Probe for Practical Diamond Nitrogen-Vacancy Microscopy
Authors:
G. J. Abrahams,
S. C. Scholten,
A. J. Healey,
I. O. Robertson,
N. Dontschuk,
S. Q. Lim,
B. C. Johnson,
D. A. Simpson,
L. C. L. Hollenberg,
J. -P. Tetienne
Abstract:
The widefield diamond nitrogen-vacancy (NV) microscope is a powerful instrument for imaging magnetic fields. However, a key limitation impeding its wider adoption is its complex operation, in part due to the difficulty of precisely interfacing the sensor and sample to achieve optimum spatial resolution. Here we demonstrate a solution to this interfacing problem that is both practical and reliably…
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The widefield diamond nitrogen-vacancy (NV) microscope is a powerful instrument for imaging magnetic fields. However, a key limitation impeding its wider adoption is its complex operation, in part due to the difficulty of precisely interfacing the sensor and sample to achieve optimum spatial resolution. Here we demonstrate a solution to this interfacing problem that is both practical and reliably minimizes NV-sample standoff. We built a compact widefield NV microscope which incorporates an integrated widefield diamond probe with full position and angular control, and developed a systematic alignment procedure based on optical interference fringes. Using this platform, we imaged an ultrathin (1 nm) magnetic film test sample, and conducted a detailed study of the spatial resolution. We reproducibly achieved an estimated NV-sample standoff (and hence spatial resolution) of at most $\sim2~μ$m across a $\sim0.5$ mm field of view. Guided by these results, we suggest future improvements for approaching the optical diffraction limit. This work is a step towards realizing a widefield NV microscope suitable for routine high-throughput map** of magnetic fields.
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Submitted 29 September, 2021;
originally announced September 2021.
