Showing 1–23 of 23 results for author: Lieber, M

Towards Computational Performance Engineering for Unsupervised Concept Drift Detection -- Complexities, Benchmarking, Performance Analysis

Authors: Elias Werner, Nishant Kumar, Matthias Lieber, Sunna Torge, Stefan Gumhold, Wolfgang E. Nagel

Abstract: Concept drift detection is crucial for many AI systems to ensure the system's reliability. These systems often have to deal with large amounts of data or react in real-time. Thus, drift detectors must meet computational requirements or constraints with a comprehensive performance evaluation. However, so far, the focus of develo** drift detectors is on inference quality, e.g. accuracy, but not on… ▽ More Concept drift detection is crucial for many AI systems to ensure the system's reliability. These systems often have to deal with large amounts of data or react in real-time. Thus, drift detectors must meet computational requirements or constraints with a comprehensive performance evaluation. However, so far, the focus of develo** drift detectors is on inference quality, e.g. accuracy, but not on computational performance, such as runtime. Many of the previous works consider computational performance only as a secondary objective and do not have a benchmark for such evaluation. Hence, we propose and explain performance engineering for unsupervised concept drift detection that reflects on computational complexities, benchmarking, and performance analysis. We provide the computational complexities of existing unsupervised drift detectors and discuss why further computational performance investigations are required. Hence, we state and substantiate the aspects of a benchmark for unsupervised drift detection reflecting on inference quality and computational performance. Furthermore, we demonstrate performance analysis practices that have proven their effectiveness in High-Performance Computing, by tracing two drift detectors and displaying their performance data. △ Less

Submitted 10 June, 2024; v1 submitted 17 April, 2023; originally announced April 2023.

Comments: Accepted at 13th International Conference on Data Science, Technology and Applications (DATA). Source code: https://github.com/elwer/Perf_DD

Scaling of sub-gap excitations in a superconductor-semiconductor nanowire quantum dot

Authors: Eduardo J. H. Lee, Xiaocheng Jiang, Rok Zitko, Ramon Aguado, Charles M. Lieber, Silvano De Franceschi

Abstract: A quantum dot coupled to a superconducting contact provides a tunable artificial analogue of a magnetic atom in a superconductor, a paradigmatic quantum impurity problem. We realize such a system with an InAs semiconductor nanowire contacted by an Al-based superconducting electrode. We use an additional normal-type contact as weakly coupled tunnel probe to perform tunneling spectroscopy measuremen… ▽ More A quantum dot coupled to a superconducting contact provides a tunable artificial analogue of a magnetic atom in a superconductor, a paradigmatic quantum impurity problem. We realize such a system with an InAs semiconductor nanowire contacted by an Al-based superconducting electrode. We use an additional normal-type contact as weakly coupled tunnel probe to perform tunneling spectroscopy measurements of the elementary sub-gap excitations, known as Andreev bound states or Yu-Shiba-Rusinov states. We demonstrate that the energy of these states, $ζ$, scales with the ratio between the Kondo temperature, $T_K$, and the superconducting gap, $Δ$. $ζ$ vanishes for $T_K/Δ\approx 0.6$, denoting a quantum phase transition between spin singlet and doublet ground states. By further leveraging the gate control over the quantum dot parameters, we determine the singlet-doublet phase boundary in the stability diagram of the system. Our experimental results show remarkable quantitative agreement with numerical renormalization group calculations. △ Less

Submitted 24 September, 2016; originally announced September 2016.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 95, 180502 (2017)

Hole Spin Coherence in a Ge/Si Heterostructure Nanowire

Authors: A. P. Higginbotham, T. W. Larsen, J. Yao, H. Yan, C. M. Lieber, C. M. Marcus, F. Kuemmeth

Abstract: Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^* \sim 0.18~\mathrm{μs}$ exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to… ▽ More Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^* \sim 0.18~\mathrm{μs}$ exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing. △ Less

Submitted 13 June, 2014; v1 submitted 9 March, 2014; originally announced March 2014.

Comments: 15 pages, 4 figures

Report number: NBI QDEV 2014

Journal ref: Nano Letters 14, 3582 (2014)

Antilocalization of Coulomb Blockade in a Ge-Si Nanowire

Authors: A. P. Higginbotham, F. Kuemmeth, T. W. Larsen, M. Fitzpatrick, J. Yao, H. Yan, C. M. Lieber, C. M. Marcus

Abstract: The distribution of Coulomb blockade peak heights as a function of magnetic field is investigated experimentally in a Ge-Si nanowire quantum dot. Strong spin-orbit coupling in this hole-gas system leads to antilocalization of Coulomb blockade peaks, consistent with theory. In particular, the peak height distribution has its maximum away from zero at zero magnetic field, with an average that decrea… ▽ More The distribution of Coulomb blockade peak heights as a function of magnetic field is investigated experimentally in a Ge-Si nanowire quantum dot. Strong spin-orbit coupling in this hole-gas system leads to antilocalization of Coulomb blockade peaks, consistent with theory. In particular, the peak height distribution has its maximum away from zero at zero magnetic field, with an average that decreases with increasing field. Magnetoconductance in the open-wire regime places a bound on the spin-orbit length ($l_{so}$ < 20 nm), consistent with values extracted in the Coulomb blockade regime ($l_{so}$ < 25 nm). △ Less

Submitted 13 January, 2014; originally announced January 2014.

Comments: Supplementary Information available at http://bit.ly/19pMpdd

Report number: NBI QDEV 2014

Journal ref: Phys. Rev. Lett. 112, 216806 (2014)

Electric Field Effect Thermoelectric Transport in Individual Silicon and Germanium/Silicon Nanowire

Authors: Yuri M. Brovman, Joshua P. Small, Yongjie Hu, Ying Fang, Charles M. Lieber, Philip Kim

Abstract: We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes respectively. At room temperatur… ▽ More We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes respectively. At room temperature, peak TEP value of $\sim 300 μ$V/K is observed in the subthreshold regime of the Si devices. The temperature dependence of the saturated TEP values are used to estimate the carrier do** of Si nanowires. △ Less

Submitted 30 June, 2013; originally announced July 2013.

Comments: 4 pages, 3 figures

Spin-resolved Andreev levels and parity crossings in hybrid superconductor-semiconductor nanostructures

Authors: Eduardo J. H. Lee, Xiaocheng Jiang, Manuel Houzet, Ramon Aguado, Charles M. Lieber, Silvano De Franceschi

Abstract: The hybrid combination of superconductors and low-dimensional semiconductors offers a versatile ground for novel device concepts, such as sources of spin-entangled electrons, nanoscale superconducting magnetometers, or recently proposed qubits based on topologically protected Majorana fermions. The underlying physics behind such hybrid devices ultimately rely on the magnetic properties of sub-gap… ▽ More The hybrid combination of superconductors and low-dimensional semiconductors offers a versatile ground for novel device concepts, such as sources of spin-entangled electrons, nanoscale superconducting magnetometers, or recently proposed qubits based on topologically protected Majorana fermions. The underlying physics behind such hybrid devices ultimately rely on the magnetic properties of sub-gap excitations, known as Andreev levels. Here we report the Zeeman effect on the Andreev levels of a semiconductor nanowire quantum dot (QD) strongly coupled to a conventional superconductor. The combination of the large QD g-factor with the large superconductor critical magnetic field allows spin degeneracy to be lifted without suppressing superconductivity. We show that a Zeeman-split Andreev level crossing the Fermi energy signals a quantum phase transition in the ground state of the superconductivity-induced QD, denoting a change in the fermionic parity of the system. This transition manifests itself as a zero-bias conductance anomaly appearing at a finite magnetic field, with properties that resemble those expected for Majorana fermions in a topological superconductor. Although the herein reported zero-bias anomalies do not hold any relation with topological superconductivity, the observed parity transitions can be regarded as precursors of Majorana modes in the long-wire limit. △ Less

Submitted 23 January, 2014; v1 submitted 11 February, 2013; originally announced February 2013.

Comments: 16 pages, 9 figures

Journal ref: Nature Nanotech., 9 (2014) 79-84

Zero-bias anomaly in a nanowire quantum dot coupled to superconductors

Authors: Eduardo J. H. Lee, Xiaocheng Jiang, Ramon Aguado, Giorgos Katsaros, Charles M. Lieber, Silvano De Franceschi

Abstract: We studied the low-energy states of spin-1/2 quantum dots defined in InAs/InP nanowires and coupled to aluminium superconducting leads. By varying the superconducting gap, Δ, with a magnetic field, B, we investigated the transition from strong coupling, Δ<< T_{K}, to weak coupling, Δ>> T_{K}, where T_{K} is the Kondo temperature. Below the critical field, we observe a persisting zero-bias Kondo re… ▽ More We studied the low-energy states of spin-1/2 quantum dots defined in InAs/InP nanowires and coupled to aluminium superconducting leads. By varying the superconducting gap, Δ, with a magnetic field, B, we investigated the transition from strong coupling, Δ<< T_{K}, to weak coupling, Δ>> T_{K}, where T_{K} is the Kondo temperature. Below the critical field, we observe a persisting zero-bias Kondo resonance that vanishes only for low B or higher temperatures, leaving the room to more robust sub-gap structures at bias voltages between Δand 2Δ. For strong and approximately symmetric tunnel couplings, a Josephson supercurrent is observed in addition to the Kondo peak. We ascribe the coexistence of a Kondo resonance and a superconducting gap to a significant density of intra-gap quasiparticle states, and the finite-bias sub-gap structures to tunneling through Shiba states. Our results, supported by numerical calculations, own relevance also in relation to tunnel-spectroscopy experiments aiming at the observation of Majorana fermions in hybrid nanostructures. △ Less

Submitted 16 October, 2012; v1 submitted 5 July, 2012; originally announced July 2012.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. Lett. 109, 186802 (2012)

Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits

Authors: Yongjie Hu, Ferdinand Kuemmeth, Charles M. Lieber, Charles M. Marcus

Abstract: Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins in the substrate hinders this approach. To realize spin qubits in a nuclear-spin-free system, intensive studies based on group-IV semiconductor are being pursued… ▽ More Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins in the substrate hinders this approach. To realize spin qubits in a nuclear-spin-free system, intensive studies based on group-IV semiconductor are being pursued. In this case, the challenge is primarily control of materials and interfaces, and device nanofabrication. We report important steps toward implementing spin qubits in a predominantly nuclear-spin-free system by demonstrating state preparation, pulsed gate control, and charge-sensing spin readout of confined hole spins in a one-dimensional Ge/Si nanowire. With fast gating, we measure T1 spin relaxation times in coupled quantum dots approaching 1 ms, increasing with lower magnetic field, consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions. △ Less

Submitted 21 October, 2011; originally announced October 2011.

Journal ref: Nature Nanotechnology 7, 47--50 (2012)

Thomas-forbidden particle capture

Authors: John H. Carter, Michael Lieber

Abstract: At high energies, in particle-capture processes between ions and atoms, classical kinematic requirements show that generally double collision Thomas processes dominate. However, for certain mass-ratios these processes are kinematically forbidden. This paper explores the possibility of capture for such processes by triple or higher order collision processes. At high energies, in particle-capture processes between ions and atoms, classical kinematic requirements show that generally double collision Thomas processes dominate. However, for certain mass-ratios these processes are kinematically forbidden. This paper explores the possibility of capture for such processes by triple or higher order collision processes. △ Less

Submitted 18 February, 2010; originally announced February 2010.

Comments: 34 pages and three figures

Spin states of the first four holes in a silicon nanowire quantum dot

Authors: F. A. Zwanenburg, C. E. W. M. van Rijmenam, Y. Fang, C. M. Lieber, L. P. Kouwenhoven

Abstract: We report measurements on a silicon nanowire quantum dot with a clarity that allows for a complete understanding of the spin states of the first four holes. First, we show control of the hole number down to one. Detailed measurements at perpendicular magnetic fields reveal the Zeeman splitting of a single hole in silicon. We are able to determine the ground-state spin configuration for one to fo… ▽ More We report measurements on a silicon nanowire quantum dot with a clarity that allows for a complete understanding of the spin states of the first four holes. First, we show control of the hole number down to one. Detailed measurements at perpendicular magnetic fields reveal the Zeeman splitting of a single hole in silicon. We are able to determine the ground-state spin configuration for one to four holes occupying the quantum dot and find a spin filling with alternating spin-down and spin-up holes, which is confirmed by magnetospectroscopy up to 9T. Additionally, a so far inexplicable feature in single-charge quantum dots in many materials systems is analyzed in detail. We observe excitations of the zero-hole ground-state energy of the quantum dot, which cannot correspond to electronic or Zeeman states. We show that the most likely explanation is acoustic phonon emission to a cavity between the two contacts to the nanowire. △ Less

Submitted 18 November, 2008; originally announced November 2008.

Comments: 24 pages, 8 figures, both including supporting information

Journal ref: Nano Lett. 9, 1071 (2009)

Strong g-Factor Anisotropy in Hole Quantum Dots Defined in Ge/Si Nanowires

Authors: S. Roddaro, A. Fuhrer, C. Fasth, L. Samuelson, J. Xiang, C. M. Lieber

Abstract: We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five top gate electrodes with a periodicity of 80 nm, insulated from the wire by a 20 nm-thick HfO_2 dielectric film. Low-temperature transport measurements were us… ▽ More We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five top gate electrodes with a periodicity of 80 nm, insulated from the wire by a 20 nm-thick HfO_2 dielectric film. Low-temperature transport measurements were used to investigate the magnetic field dependence of Coulomb blockade peaks in a single quantum dot and indicate a strongly anisotropic g-factor with |g_para| = 0.60 +/- 0.03 and |g_perp| < 0.12. △ Less

Submitted 19 June, 2007; originally announced June 2007.

Comments: 5 pages, 3 figures

Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires

Authors: Yongjie Hu, Hugh H. O. Churchill, David J. Reilly, Jie Xiang, Charles M. Lieber, Charles M. Marcus

Abstract: Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis… ▽ More Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top gate-defined double quantum dot based on Ge/Si heterostructure nanowires with fully tunable coupling between the dots and to the leads. We also demonstrate a novel approach to charge sensing in a one-dimensional nanostructure by capacitively coupling the double dot to a single dot on an adjacent nanowire. The double quantum dot and integrated charge sensor serve as an essential building block required to form a solid-state spin qubit free of nuclear spin. △ Less

Submitted 15 June, 2007; originally announced June 2007.

Comments: Related work at http://marcuslab.harvard.edu and http://cmliris.harvard.edu

Journal ref: Nature Nanotechnology 2, 622 (2007).

Ge/Si nanowire mesoscopic Josephson junctions

Authors: Jie Xiang, A. Vidan, M. Tinkham, R. M. Westervelt, Charles M. Lieber

Abstract: The controlled growth of nanowires (NWs) with dimensions comparable to the Fermi wavelengths of the charge carriers allows fundamental investigations of quantum confinement phenomena. Here, we present studies of proximity-induced superconductivity in undoped Ge/Si core/shell NW heterostructures contacted by superconducting leads. By using a top gate electrode to modulate the carrier density in t… ▽ More The controlled growth of nanowires (NWs) with dimensions comparable to the Fermi wavelengths of the charge carriers allows fundamental investigations of quantum confinement phenomena. Here, we present studies of proximity-induced superconductivity in undoped Ge/Si core/shell NW heterostructures contacted by superconducting leads. By using a top gate electrode to modulate the carrier density in the NW, the critical supercurrent can be tuned from zero to greater than 100 nA. Furthermore, discrete sub-bands form in the NW due to confinement in the radial direction, which results in stepwise increases in the critical current as a function of gate voltage. Transport measurements on these superconductor-NW-superconductor devices reveal high-order (n = 25) resonant multiple Andreev reflections, indicating that the NW channel is smooth and the charge transport is highly coherent. The ability to create and control coherent superconducting ordered states in semiconductor-superconductor hybrid nanostructures allows for new opportunities in the study of fundamental low-dimensional superconductivity. △ Less

Submitted 6 December, 2006; originally announced December 2006.

Journal ref: Nature Nanotechnology 1, 208 - 213 (2006)

Performance Analysis of a Ge/Si Core/Shell Nanowire Field Effect Transistor

Authors: Gengchiau Liang, Jie Xiang, Neerav Kharche, Gerhard Klimeck, Charles M. Lieber, Mark Lundstrom

Abstract: We analyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3s*d5 tight-binding treatment of the electronic structure. Comparison of the measured performance of the device with the effects of series resistance removed to the simulated result assuming ballistic transport shows that the experimental device operate… ▽ More We analyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3s*d5 tight-binding treatment of the electronic structure. Comparison of the measured performance of the device with the effects of series resistance removed to the simulated result assuming ballistic transport shows that the experimental device operates between 60 to 85% of the ballistic limit. For this ~15 nm diameter Ge nanowire, we also find that 14-18 modes are occupied at room temperature under ON-current conditions with ION/IOFF=100. To observe true one dimensional transport in a <110> Ge nanowire transistor, the nanowire diameter would have to be much less than about 5 nm. The methodology described here should prove useful for analyzing and comparing on common basis nanowire transistors of various materials and structures. △ Less

Submitted 8 November, 2006; originally announced November 2006.

Manipulation and assembly of nanowires with holographic optical traps

Authors: Ritesh Agarwal, Kosta Ladavac, Yael Roichman, Guiha Yu, Charles M. Lieber, David G. Grier

Abstract: We demonstrate that semiconductor nanowires measuring just a few nanometers in diameter can be translated, rotated, cut, fused and organized into nontrivial structures using holographic optical traps. The holographic approach to nano-assembly allows for simultaneous independent manipulation of multiple nanowires, including relative translation and relative rotation. We demonstrate that semiconductor nanowires measuring just a few nanometers in diameter can be translated, rotated, cut, fused and organized into nontrivial structures using holographic optical traps. The holographic approach to nano-assembly allows for simultaneous independent manipulation of multiple nanowires, including relative translation and relative rotation. △ Less

Submitted 12 September, 2005; originally announced September 2005.

Comments: 5 pages, 5 figures

One-Dimensional Hole Gas in Germanium/Silicon Nanowire Heterostructures

Authors: Wei Lu, Jie Xiang, Brian P. Timko, Yue Wu, Charles M. Lieber

Abstract: Two-dimensional electron and hole gas systems, enabled through band structure design and epitaxial growth on planar substrates, have served as key platforms for fundamental condensed matter research and high performance devices. The analogous development of one-dimensional (1D) electron or hole gas systems through controlled growth on 1D nanostructure substrates, which could open up opportunitie… ▽ More Two-dimensional electron and hole gas systems, enabled through band structure design and epitaxial growth on planar substrates, have served as key platforms for fundamental condensed matter research and high performance devices. The analogous development of one-dimensional (1D) electron or hole gas systems through controlled growth on 1D nanostructure substrates, which could open up opportunities beyond existing carbon nanotube and nanowire systems, has not been realized. Here we report the synthesis and transport studies of a 1D hole gas system based on a free-standing germanium/silicon (Ge/Si) core/shell nanowire heterostructure. Room temperature electrical transport measurements show clearly hole accumulation in undoped Ge/Si nanowire heterostructures, in contrast to control experiments on single component nanowires. Low-temperature studies show well controlled Coulomb blockade oscillations when the Si shell serves as a tunnel barrier to the hole gas in the Ge channel. Transparent contacts to the hole gas also have been reproducibly achieved by thermal annealing. In such devices, we observe conductance quantization at low temperatures, corresponding to ballistic transport through 1D subbands, where the measured subband energy spacings agree with calculations for a cylindrical confinement potential. In addition, we observe a 0.7 structure, which has been attributed to spontaneous spin polarization, suggesting the universality of this phenomenon in interacting 1D systems. Lastly, the conductance exhibits little temperature dependence, consistent with our calculation of reduced backscattering in this 1D system, and suggests that transport is ballistic even at room temperature. △ Less

Submitted 12 July, 2005; originally announced July 2005.

Comments: 17 pages, 5 figures

Journal ref: PNAS, 102, 10046-10051 (2005)

Coherent Single Charge Transport in Molecular-Scale Silicon Nanowire Transistors

Authors: Zhaohui Zhong, Ying Fang, Wei Lu, Charles M. Lieber

Abstract: We report low-temperature electrical transport studies of molecule-scale silicon nanowires. Individual nanowires exhibit well-defined Coulomb blockade oscillations characteristic of charge addition to a single nanostructure with length scales up to at least 400 nm. Further studies demonstrate coherent charge transport through discrete single particle quantum levels extending the whole device, an… ▽ More We report low-temperature electrical transport studies of molecule-scale silicon nanowires. Individual nanowires exhibit well-defined Coulomb blockade oscillations characteristic of charge addition to a single nanostructure with length scales up to at least 400 nm. Further studies demonstrate coherent charge transport through discrete single particle quantum levels extending the whole device, and show that the ground state spin configuration follows the Lieb-Mattis theorem. In addition, depletion of the nanowires suggests that phase coherent single-dot characteristics are accessible in a regime where correlations are strong. △ Less

Submitted 30 December, 2004; originally announced December 2004.

Comments: 4 pages and 4 figures

Lasing in Single Cadmium Sulfide Nanowire Optical Cavities

Authors: Ritesh Agarwal, Carl J. Barrelet, Charles M. Lieber

Abstract: The mechanism of lasing in single cadmium sulfide (CdS) nanowire cavities was elucidated by temperature-dependent and time-resolved photoluminescence (PL) measurements. Temperature-dependent PL studies reveal rich spectral features and show that an exciton-exciton interaction is critical to lasing up to 75 K, while an exciton-phonon process dominates at higher temperatures. These measurements to… ▽ More The mechanism of lasing in single cadmium sulfide (CdS) nanowire cavities was elucidated by temperature-dependent and time-resolved photoluminescence (PL) measurements. Temperature-dependent PL studies reveal rich spectral features and show that an exciton-exciton interaction is critical to lasing up to 75 K, while an exciton-phonon process dominates at higher temperatures. These measurements together with temperature and intensity dependent life-time and threshold studies suggest that lasing is due to formation of excitons, and moreover, have implications for the design of efficient, low-threshold nanowire lasers. △ Less

Submitted 6 December, 2004; originally announced December 2004.

Comments: 4 figures

Plastic Deformations in Mechanically Strained Single-Walled Carbon Nanotubes

Authors: D. Bozovic, M. Bockrath, J. H. Hafner, C. M. Lieber, H. Park, M. Tinkham

Abstract: AFM manipulation was used to controllably stretch individual metallic single-walled carbon nanotubes (SWNTs). We have found that SWNTs can sustain elongations as great as 30% without breaking. Scanned gate microscopy and transport measurements were used to probe the effects of the mechanical strain on the SWNT electronic properties, which revealed a strain-induced increase in intra-tube electron… ▽ More AFM manipulation was used to controllably stretch individual metallic single-walled carbon nanotubes (SWNTs). We have found that SWNTs can sustain elongations as great as 30% without breaking. Scanned gate microscopy and transport measurements were used to probe the effects of the mechanical strain on the SWNT electronic properties, which revealed a strain-induced increase in intra-tube electronic scattering above a threshold strain of ~5-10%. These findings are consistent with theoretical calculations predicting the onset of plastic deformation and defect formation in carbon nanotubes. △ Less

Submitted 18 October, 2002; originally announced October 2002.

One-Dimensional Energy Dispersion of Single-Walled Carbon Nanotubes by Resonant Electron Scattering

Authors: Min Ouyang, **-Lin Huang, Charles M. Lieber

Abstract: We characterized the energy band dispersion near the Fermi level in single-walled carbon nanotubes using low-temperature scanning tunneling microscopy. Analysis of energy dependent standing wave oscillations, which result from quantum interference of electrons resonantly scattered by defects, yield a linear energy dispersion near EF, and indicate the importance of parity in scattering for armcha… ▽ More We characterized the energy band dispersion near the Fermi level in single-walled carbon nanotubes using low-temperature scanning tunneling microscopy. Analysis of energy dependent standing wave oscillations, which result from quantum interference of electrons resonantly scattered by defects, yield a linear energy dispersion near EF, and indicate the importance of parity in scattering for armchair single-walled carbon nanotubes. Additionally, these data provide values of the tight-binding overlap integral and Fermi wavevector in good agreement with previous work, but indicate that the electron coherence length is substantially shortened. △ Less

Submitted 27 July, 2001; originally announced July 2001.

Comments: 5 pages, 3 figures

Structure of Flux Line Lattices with Weak Disorder at Large Length Scales

Authors: Philip Kim, Zhen Yao, Cristian A. Bolle, Charles M. Lieber

Abstract: Dislocation-free decoration images containing up to 80,000 vortices have been obtained on high quality Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ superconducting single crystals. The observed flux line lattices are in the random manifold regime with a roughening exponent of 0.44 for length scales up to 80-100 lattice constants. At larger length scales, the data exhibit nonequilibrium features that pers… ▽ More Dislocation-free decoration images containing up to 80,000 vortices have been obtained on high quality Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ superconducting single crystals. The observed flux line lattices are in the random manifold regime with a roughening exponent of 0.44 for length scales up to 80-100 lattice constants. At larger length scales, the data exhibit nonequilibrium features that persist for different cooling rates and field histories. △ Less

Submitted 15 October, 1999; v1 submitted 13 October, 1999; originally announced October 1999.

Comments: 4 pages, 3 gif images, to appear in PRB rapid communication

Electronic Density of States of Atomically Resolved Single-Walled Carbon Nanotubes: Van Hove Singularities and End States

Authors: Philip Kim, Teri W. Odom, **-Lin Huang, Charles M. Lieber

Abstract: The electronic density of states of atomically resolved single-walled carbon nanotubes have been investigated using scanning tunneling microscopy. Peaks in the density of states due to the one-dimensional nanotube band structure have been characterized and compared with the results of tight-binding calculations. In addition, tunneling spectroscopy measurements recorded along the axis of an atomi… ▽ More The electronic density of states of atomically resolved single-walled carbon nanotubes have been investigated using scanning tunneling microscopy. Peaks in the density of states due to the one-dimensional nanotube band structure have been characterized and compared with the results of tight-binding calculations. In addition, tunneling spectroscopy measurements recorded along the axis of an atomically-resolved nanotube exhibit new, low-energy peaks in the density of states near the tube end. Calculations suggest that these features arise from the specific arrangement of carbon atoms that close the nanotube end. △ Less

Submitted 28 December, 1998; originally announced December 1998.

Comments: 4 pages including 4 eps figures, to apear in Phys. Rev. Lett

Coulomb Gap and Correlated Vortex Pinning in Superconductors

Authors: Uwe C. Täuber, Hongjie Dai, David R. Nelson, Charles M. Lieber

Abstract: The positions of columnar pins and magnetic flux lines determined from a decoration experiment on BSCCO were used to calculate the single--particle density of states at low temperatures in the Bose glass phase. A wide Coulomb gap is found, with gap exponent $s \approx 1.2$, as a result of the long--range interaction between the vortices. As a consequence, the variable--range hop** transport of… ▽ More The positions of columnar pins and magnetic flux lines determined from a decoration experiment on BSCCO were used to calculate the single--particle density of states at low temperatures in the Bose glass phase. A wide Coulomb gap is found, with gap exponent $s \approx 1.2$, as a result of the long--range interaction between the vortices. As a consequence, the variable--range hop** transport of flux lines is considerably reduced with respect to the non--interacting case, the effective Mott exponent being enhanced from $p_0 = 1/3$ to $p_{\rm eff} \approx 0.5$ for this specific experiment. △ Less

Submitted 9 December, 1994; v1 submitted 5 December, 1994; originally announced December 1994.

Comments: 10 pages, Revtex, 4 figures appended as uu-encoded postscript files, also available as hardcopies from [email protected]

Journal ref: Phys. Rev. Lett. 74 (1995) 5132