Showing 1–25 of 25 results for author: Liang, C -

Variable Electrical Responses in Epitaxial Graphene Nanoribbons

Authors: C. -C. Yeh, S. M. Mhatre, N. T. M. Tran, H. M. Hill, H. **, P. -C. Liao, D. K. Patel, R. E. Elmquist, C. -T. Liang, A. F. Rigosi

Abstract: We have demonstrated the fabrication of both armchair and zigzag epitaxial graphene nanoribbon (GNR) devices on 4H-SiC using a polymer-assisted sublimation growth method. The phenomenon of terrace step formation has traditionally introduced the risk of GNR deformation along sidewalls, but a polymer-assisted sublimation method helps mitigate this risk. Each type of 50 nm wide GNR is examined electr… ▽ More We have demonstrated the fabrication of both armchair and zigzag epitaxial graphene nanoribbon (GNR) devices on 4H-SiC using a polymer-assisted sublimation growth method. The phenomenon of terrace step formation has traditionally introduced the risk of GNR deformation along sidewalls, but a polymer-assisted sublimation method helps mitigate this risk. Each type of 50 nm wide GNR is examined electrically and optically (armchair and zigzag), with the latter method being a check on the quality of the GNR devices and the former using alternating current to investigate resistance attenuation from frequencies above 100 Hz. Rates of attenuation are determined for each type of GNR device, revealing subtle suggested differences between armchair and zigzag GNRs. △ Less

Submitted 25 April, 2023; originally announced April 2023.

Proposal and demonstration of germanium-on-silicon lock-in pixels for indirect time-of-flight based three-dimensional sensing

Authors: N. Na, S. -L. Cheng, H. -D. Liu, M. -J. Yang, C. -Y. Chen, K. -C. Chu, H. -W. Chen, Y. -T. Chou, C. -T. Lin, W. -H. Liu, C. -F. Liang, C. -L. Chen, S. -W. Chu, B. -J. Chen, Y. -F. Lyu, S. -L. Chen

Abstract: We propose the use of germanium-on-silicon technology for indirect time-of-flight based three-dimensional sensing, and demonstrate a novel lock-in pixel featuring high quantum efficiency and large frequency bandwidth. Compared to silicon pixels, germanium-on-silicon pixels simultaneously maintain a high quantum efficiency and a high demodulation contrast deep into GHz frequency regime, which enabl… ▽ More We propose the use of germanium-on-silicon technology for indirect time-of-flight based three-dimensional sensing, and demonstrate a novel lock-in pixel featuring high quantum efficiency and large frequency bandwidth. Compared to silicon pixels, germanium-on-silicon pixels simultaneously maintain a high quantum efficiency and a high demodulation contrast deep into GHz frequency regime, which enable consistently superior depth accuracy in both indoor and outdoor scenarios. Physical model, numerical simulation, device fabrication and characterization, system performance comparison, and laser safety analysis are presented. Our work paves a new path to high-performance time-of-flight rangers and imagers, as well as potential adoption of lasers operated at a longer near infrared wavelength that falls outside of the operation window of silicon pixels. △ Less

Submitted 15 June, 2020; v1 submitted 19 June, 2018; originally announced June 2018.

Transport in disordered monolayer molybdenum disulfide nanoflakes: evidence for inhomogeneous charge transport

Authors: Shun-Tsung Lo, O. Klochan, C. -H. Liu, W. -H. Wang, A. R. Hamilton, C. -T. Liang

Abstract: We study charge transport in a monolayer molybdenum disulfide nanoflake over a wide range of carrier density, temperature, and electric bias. We find that the transport is best described by a percolating picture in which the disorder breaks translational invariance, breaking the system up into a series of puddles, rather than previous pictures in which the disorder is treated as homogeneous and un… ▽ More We study charge transport in a monolayer molybdenum disulfide nanoflake over a wide range of carrier density, temperature, and electric bias. We find that the transport is best described by a percolating picture in which the disorder breaks translational invariance, breaking the system up into a series of puddles, rather than previous pictures in which the disorder is treated as homogeneous and uniform. Our work provides insight to a unified picture of charge transport in monolayer molybdenum disulfide nanoflakes and contributes to the development of next-generation molybdenum disulfide based devices. △ Less

Submitted 30 August, 2014; originally announced September 2014.

Comments: Evidence for inhomogeneous charge transport in Molybdenum disulfide

Journal ref: Nanotechnol. 25, 375201 (2014)

Non-Ohmic behavior of carrier transport in highly disordered graphene

Authors: Shun-Tsung Lo, Chiashain Chuang, R. K. Puddy, T. -M. Chen, C. G. Smith, C. -T. Liang

Abstract: We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hop** transport occurs. In the activationless-hop** reg… ▽ More We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hop** transport occurs. In the activationless-hop** regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs with the presence of high electric field and perpendicular magnetic field.. △ Less

Submitted 26 October, 2013; v1 submitted 22 October, 2013; originally announced October 2013.

Comments: Reported by nanotechweb.org. Two references added

Report number: Nanotechnology 24, 165201 (2013)

Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting

Authors: Yi-Ting Wang, Gil-Ho Kim, C. F. Huang, Shun-Tsung Lo, Wei-Jen Chen, J. T. Nicholls, Li-Hung Lin, D. A. Ritchie, Y. H. Chang, C. -T. Liang, B. P. Dolan

Abstract: We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density and thus vary disorder and spin-splitting. Data for both the spin-resolved and spin-degenerate phase transitions are presented, the form… ▽ More We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density and thus vary disorder and spin-splitting. Data for both the spin-resolved and spin-degenerate phase transitions are presented, the former collapsing to the latter with decreasing gate voltage and/or decreasing spin-splitting. The experimental results support a recent theory, based on modular symmetry, which predicts how the critical Hall conductivity varies with spin-splitting. △ Less

Submitted 5 September, 2012; originally announced September 2012.

Comments: 22 pages

Journal ref: J. Phys.: Condens. Matter 24 405801 (2012)

Nanoscale structure and mechanism for enhanced electromechanical response of highly-strained BiFeO3 thin films

Authors: A. R. Damodaran, C. -W. Liang, Q. He, C. -Y. Peng, L. Chang, Y. -H. Chu, L. W. Martin

Abstract: The nanostructural evolution of the strain-induced structural phase transition in BiFeO3 is examined. Using high-resolution X-ray diffraction and scanning-probe microscopy-based studies we have uniquely identified and examined the numerous phases present at these phase boundaries and have discovered an intermediate monoclinic phase in addition to the previously observed rhombohedral- and tetragona… ▽ More The nanostructural evolution of the strain-induced structural phase transition in BiFeO3 is examined. Using high-resolution X-ray diffraction and scanning-probe microscopy-based studies we have uniquely identified and examined the numerous phases present at these phase boundaries and have discovered an intermediate monoclinic phase in addition to the previously observed rhombohedral- and tetragonal-like phases. Further analysis has determined that the so-called mixed-phase regions of these films are not mixtures of rhombohedral- and tetragonal-like phases, but intimate mixtures of highly-distorted monoclinic phases with no evidence for the presence of the rhombohedral-like parent phase. Finally, we propose a mechanism for the enhanced electromechanical response in these films including how these phases interact at the nanoscale to produce large surface strains. △ Less

Submitted 19 May, 2011; originally announced May 2011.

Comments: 17 page; 5 figures; Accepted to Advanced Materials, March 17, 2011

Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system

Authors: Kuang Yao Chen, Y. H. Chang, C. -T. Liang, N. Aoki, Y. Ochiai, C. F. Huang, Li-Hung Lin, K. A. Cheng, H. H. Cheng, H. H. Lin, Jau-Yang Wu, Sheng-Di Lin

Abstract: Magneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magnetoresistivity oscillations due to Landau quantisation can be identified just near the direct insulator-quantum Hall (I-QH) transition. However, different mobilities are obtained from the oscillations and tra… ▽ More Magneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magnetoresistivity oscillations due to Landau quantisation can be identified just near the direct insulator-quantum Hall (I-QH) transition. However, different mobilities are obtained from the oscillations and transition point. Our study shows that the direct I-QH transition does not always correspond to the onset of strong localisation. △ Less

Submitted 11 February, 2008; originally announced February 2008.

Comments: 11 pages, 7 figures

Journal ref: J. Phys.: Condens. Matter 20 (2008) 295223.

Experimental Studies of Low-field Landau Quantization in Two-dimensional Electron Systems in GaAs/AlGaAs Heterostructures

Authors: **g-Han Chen, D. R. Hang, C. F. Huang, Tsai-Yu Huang, Jyun-Ying Lin, S. H. Lo, J. C. Hsiao, Ming-Gu Lin, M. Y. Simmons, D. A. Ritchie, C. -T. Liang

Abstract: By applying a magnetic field perpendicular to GaAs/AlGaAs two-dimensional electron systems, we study the low-field Landau quantization when the thermal dam** is reduced with decreasing the temperature. Magneto-oscillations following Shubnikov-de Haas (SdH) formula are observed even when their amplitudes are so large that the deviation to such a formula is expected. Our experimental results sho… ▽ More By applying a magnetic field perpendicular to GaAs/AlGaAs two-dimensional electron systems, we study the low-field Landau quantization when the thermal dam** is reduced with decreasing the temperature. Magneto-oscillations following Shubnikov-de Haas (SdH) formula are observed even when their amplitudes are so large that the deviation to such a formula is expected. Our experimental results show the importance of the positive magneto-resistance to the extension of SdH formula under the dam** induced by the disorder. △ Less

Submitted 29 October, 2006; originally announced October 2006.

Comments: 9 pages, 3 figures

Journal ref: J. Korean Phys. Soc. 50, 776 (2007).

An experimental study on $Γ$(2) modular symmetry in the quantum Hall system with a small spin-splitting

Authors: C. F. Huang, Y. H. Chang, H. H. Cheng, Z. P. Yang, H. D. Yeh, C. H. Hsu, C. -T. Liang, D. R. Hang, H. H. Lin

Abstract: Magnetic-field-induced phase transitions were studied with a two-dimensional electron AlGaAs/GaAs system. The temperature-driven flow diagram shows the features of the $Γ$(2) modular symmetry, which includes distorted flowlines and shiftted critical point. The deviation of the critical conductivities is attributed to a small but resolved spin splitting, which reduces the symmetry in Landau quant… ▽ More Magnetic-field-induced phase transitions were studied with a two-dimensional electron AlGaAs/GaAs system. The temperature-driven flow diagram shows the features of the $Γ$(2) modular symmetry, which includes distorted flowlines and shiftted critical point. The deviation of the critical conductivities is attributed to a small but resolved spin splitting, which reduces the symmetry in Landau quantization. [B. P. Dolan, Phys. Rev. B 62, 10278.] Universal scaling is found under the reduction of the modular symmetry. It is also shown that the Hall conductivity could still be governed by the scaling law when the semicircle law and the scaling on the longitudinal conductivity are invalid. *corresponding author:[email protected] △ Less

Submitted 26 December, 2006; v1 submitted 13 September, 2006; originally announced September 2006.

Comments: The revised manuscript has been published in J. Phys.: Condens. Matter

Journal ref: Journal of Physics: Condensed Matter 19, 026205 (2007)

From insulator to quantum Hall liquid at low magnetic fields

Authors: Tsai-Yu Huang, C. -T. Liang, Gil-Ho Kim, C. F. Huang, Chao-** Huang, Jyun-Ying Lin, Hsi-Sheng Goan, D. A. Ritchie

Abstract: We have performed low-temperature transport measurements on a GaAs two-dimensional electron system at low magnetic fields. Multiple temperature-independent points and accompanying oscillations are observed in the longitudinal resistivity between the low-field insulator and the quantum Hall (QH) liquid. Our results support the existence of an intermediate regime, where the amplitudes of magneto-o… ▽ More We have performed low-temperature transport measurements on a GaAs two-dimensional electron system at low magnetic fields. Multiple temperature-independent points and accompanying oscillations are observed in the longitudinal resistivity between the low-field insulator and the quantum Hall (QH) liquid. Our results support the existence of an intermediate regime, where the amplitudes of magneto-oscillations can be well described by conventional Shubnikov-de Haas theory, between the low-field insulator and QH liquid. △ Less

Submitted 6 September, 2008; v1 submitted 21 January, 2006; originally announced January 2006.

Comments: Magneto-oscillations governed by Shubnikov-de Haas theory are observed between the low-field insulator and quantum Hall liquid

Journal ref: Phys. Rev. B 78, 113305 (2008)

Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect

Authors: D. R. Hang, R. B. Dunford, Gil-Ho Kim, H. D. Yeh, C. F. Huang, D. A. Ritchie, I. Farrer, Y. W. Zhang, C. -T. Liang, Y. H. Chang

Abstract: Magnetic-field-induced phase transitions in the integer quantum Hall effect are studied under the formation of paired Landau bands arising from Zeeman spin splitting. By investigating features of modular symmetry, we showed that modifications to the particle-hole transformation should be considered under the coupling between the paired Landau bands. Our study indicates that such a transformation… ▽ More Magnetic-field-induced phase transitions in the integer quantum Hall effect are studied under the formation of paired Landau bands arising from Zeeman spin splitting. By investigating features of modular symmetry, we showed that modifications to the particle-hole transformation should be considered under the coupling between the paired Landau bands. Our study indicates that such a transformation should be modified either when the Zeeman gap is much smaller than the cyclotron gap, or when these two gaps are comparable. △ Less

Submitted 24 August, 2005; originally announced August 2005.

Comments: 8 pages, 4 figures

Journal ref: The main results are published in Microelectron. J. 36, 469 (2005).

Measurements of Composite Fermion Conductivity Dependence on Carrier Density

Authors: C. -T. Liang, M. Y. Simmons, D. A. Ritchie, M. Pepper

Abstract: We present the first experimental study of the carrier density dependence of the composite fermion conductivity $σ^{CF}_{xx}$ at Landau level filling factors $ν= {1/2}$ and $ν= {3/2}$ in high-quality front-gated GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructures. Extracting $α$ from the power law ln$(σ^{CF}_{xx}) \propto$ ln$(n_e)^α$ shows that $α\approx 1$. The measured $α \approx 1$ is placed betw… ▽ More We present the first experimental study of the carrier density dependence of the composite fermion conductivity $σ^{CF}_{xx}$ at Landau level filling factors $ν= {1/2}$ and $ν= {3/2}$ in high-quality front-gated GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructures. Extracting $α$ from the power law ln$(σ^{CF}_{xx}) \propto$ ln$(n_e)^α$ shows that $α\approx 1$. The measured $α \approx 1$ is placed between the predicted value 3/4 in the strong random magnetic field regime, and 3/2 in the weak random magnetic field regime. Comparisons between our results and theory are discussed. △ Less

Submitted 17 March, 2005; originally announced March 2005.

Comments: 6 pages, 7 figures. We present the first experimental study of the carrier density dependence of the composite fermion conductivity $σ^{CF}_{xx}$ at Landau level filling factors $ν= {1/2}$ and $ν= {3/2}$ in high-quality front-gated GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructures

Journal ref: J. Phys.: Condens. Matter 16, 1095 (2004)

Can the conductance of an adiabatic ballistic constriction be lower than $2e^2/h$?

Authors: C. -T. Liang, O. A. Tkachenko, V. A. Tkachenko, D. G. Baksheyev, M. Y. Simmons, D. A. Ritchie, M. Pepper

Abstract: We have performed four-terminal conductance measurements of a one-dimensional (1D) channel in which it is possible to modulate the potential profile using three overlaying finger gates. In such a 1D ballistic structure we have observed, {\em for the first time,} that the conductance steps show a gradual decrease from $2e^2/h$ to $0.97 \times 2e^2/h$ with increasing negative finger gate voltage i… ▽ More We have performed four-terminal conductance measurements of a one-dimensional (1D) channel in which it is possible to modulate the potential profile using three overlaying finger gates. In such a 1D ballistic structure we have observed, {\em for the first time,} that the conductance steps show a gradual decrease from $2e^2/h$ to $0.97 \times 2e^2/h$ with increasing negative finger gate voltage in a short, clean 1D constriction. We suggest this phenomenon is due to differing shifts of 1D subbands with changing spilt-gate voltage. Both a simple analytical estimate for an adiabatic constriction and, realistic modeling of the device, give the same magnitude of the conductance decrease as observed in our experiments. △ Less

Submitted 16 March, 2005; originally announced March 2005.

Comments: 5 pages, 3 figures. Our results show that a deviation from the quantized value $2e^2/h$ is possible even in a clean short ballistic constriction

Journal ref: Phys. Rev. B 70, 195324 (2004)

On the low-field insulator-quantum Hall conductor transitions

Authors: Tsai-Yu Huang, J. R. Juang, C. F. Huang, Gil-Ho Kim, Chao-** Huang, C. -T. Liang, Y. H. Chang, Y. F. Chen, Y. Lee, D. A. Ritchie

Abstract: We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor $ν=4$ on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the $ν=4$ quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field local… ▽ More We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor $ν=4$ on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the $ν=4$ quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall conductor transition. △ Less

Submitted 12 March, 2005; originally announced March 2005.

Comments: Our experimental results are inconsistent with Huckestein's argument [PRL 84, 3141 (2000)]

Journal ref: Physica E 22, 240-243 (2004)

A study on the universality of the magnetic-field-induced phase transitions in the two-dimensional electron system in an AlGaAs/GaAs heterostructure

Authors: C. F. Huang, Y. H. Chang, H. H. Cheng, C. -T. Liang, G. J. Hwang

Abstract: Plateau-plateau (P-P) and insulator-quantum Hall conductor (I-QH) transitions are observed in the two-dimensional electron system in an AlGaAs/GaAs heterostructure. At high fields, the critical conductivities are not of the expected universal values and the temperature-dependence of the width of the P-P transition does not follow the universal scaling. However, the semicircle law still holds, an… ▽ More Plateau-plateau (P-P) and insulator-quantum Hall conductor (I-QH) transitions are observed in the two-dimensional electron system in an AlGaAs/GaAs heterostructure. At high fields, the critical conductivities are not of the expected universal values and the temperature-dependence of the width of the P-P transition does not follow the universal scaling. However, the semicircle law still holds, and universal scaling behavior was found in the P-P transition after map** it to the I-QH transition by the Landau-level addition transformation. We pointed out that in order to get a correct critical exponent, it is essential that the scaling analysis must be performed near the critical point. And with proper analysis, we found that the P-P transition and the insulator quantum Hall conductor transitions are of the same universal class. △ Less

Submitted 10 April, 2004; originally announced April 2004.

Comments: 11 pages, 3 figures

Journal ref: Physica E 22, 232 (2004)

Coulomb Charging Effects in an Open Quantum Dot

Authors: O. A. Tkachenko, V. A. Tkachenko, D. G. Baksheyev, C. -T. Liang, M. Y. Simmons, C. G. Smith, D. A. Ritchie, Gil-Ho Kim, M. Pepper

Abstract: Low-temperature transport properties of a lateral quantum dot formed by overlaying finger gates in a clean one-dimensional channel are investigated. Continuous and periodic oscillations superimposed upon ballistic conductance steps are observed, when the conductance G of the dot changes within a wide range 0<G<6e^2/h. Calculations of the electrostatics confirm that the measured periodic conducta… ▽ More Low-temperature transport properties of a lateral quantum dot formed by overlaying finger gates in a clean one-dimensional channel are investigated. Continuous and periodic oscillations superimposed upon ballistic conductance steps are observed, when the conductance G of the dot changes within a wide range 0<G<6e^2/h. Calculations of the electrostatics confirm that the measured periodic conductance oscillations correspond to successive change of the total charge of the dot by $e$. By modelling the transport it is shown that the progression of the Coulomb oscillations into the region G>2e^2/h may be due to suppression of inter-1D-subband scattering. Fully transmitted subbands contribute to coherent background of conductance, while sequential tunneling via weakly transmitted subbands leads to Coulomb charging of the dot. △ Less

Submitted 2 March, 2000; originally announced March 2000.

Comments: 12 pages, RevTeX, 15 eps figures included, submitted to Phys. Rev. B

Spin-dependent transport in a quasiballistic quantum wire

Authors: C. -T. Liang, M. Pepper, M. Y. Simmons, C. G. Smith, D. A. Ritchie

Abstract: We describe the transport properties of a 5 $μ$m long one-dimensional (1D) quantum wire. Reduction of conductance plateaux due to the introduction of weakly disorder scattering are observed. In an in-plane magnetic field, we observe spin-splitting of the reduced conductance steps. Our experimental results provide evidence that deviation from conductance quantisation is very small for electrons w… ▽ More We describe the transport properties of a 5 $μ$m long one-dimensional (1D) quantum wire. Reduction of conductance plateaux due to the introduction of weakly disorder scattering are observed. In an in-plane magnetic field, we observe spin-splitting of the reduced conductance steps. Our experimental results provide evidence that deviation from conductance quantisation is very small for electrons with spin parallel and is about 1/3 for electrons with spin anti-parallel. Moreover, in a high in-plane magnetic field, a spin-polarised 1D channel shows a plateau-like structure close to $0.3 \times e^2/h$ which strengthens with {\em increasing} temperatures. It is suggested that these results arise from the combination of disorder and the electron-electron interactions in the 1D electron gas. △ Less

Submitted 20 December, 1999; originally announced December 1999.

Comments: 4 pages, 5 figures, latex to be published in Phys. Rev. B (15/3/2000)

Detection of Coulomb Charging around an Antidot

Authors: M. Kataoka, C. J. B. Ford, G. Faini, D. Mailly, M. Y. Simmons, D. R. Mace, C. -T. Liang, D. A. Ritchie

Abstract: We have detected oscillations of the charge around a potential hill (antidot) in a two-dimensional electron gas as a function of a perpendicular magnetic field B. The field confines electrons around the antidot in closed orbits, the areas of which are quantised through the Aharonov-Bohm effect. Increasing B reduces each state's area, pushing electrons closer to the centre, until enough charge bu… ▽ More We have detected oscillations of the charge around a potential hill (antidot) in a two-dimensional electron gas as a function of a perpendicular magnetic field B. The field confines electrons around the antidot in closed orbits, the areas of which are quantised through the Aharonov-Bohm effect. Increasing B reduces each state's area, pushing electrons closer to the centre, until enough charge builds up for an electron to tunnel out. This is a new form of the Coulomb blockade seen in electrostatically confined dots. We have also studied h/2e oscillations and found evidence for coupling of opposite spin states of the lowest Landau level. △ Less

Submitted 29 July, 1999; originally announced July 1999.

Comments: 3 pages, 3 Postscript figures, submitted to the proceedings of EP2DS-13

Detection of Coulomb Charging around an Antidot in the Quantum Hall Regime

Authors: M. Kataoka, C. J. B. Ford, G. Faini, D. Mailly, M. Y. Simmons, D. R. Mace, C. -T. Liang, D. A. Ritchie

Abstract: We have detected oscillations of the charge around a potential hill (antidot) in a two-dimensional electron gas as a function of a large magnetic field B. The field confines electrons around the antidot in closed orbits, the areas of which are quantised through the Aharonov-Bohm effect. Increasing B reduces each state's area, pushing electrons closer to the centre, until enough charge builds up… ▽ More We have detected oscillations of the charge around a potential hill (antidot) in a two-dimensional electron gas as a function of a large magnetic field B. The field confines electrons around the antidot in closed orbits, the areas of which are quantised through the Aharonov-Bohm effect. Increasing B reduces each state's area, pushing electrons closer to the centre, until enough charge builds up for an electron to tunnel out. This is a new form of the Coulomb blockade seen in electrostatically confined dots. Addition and excitation spectra in DC bias confirm the Coulomb blockade of tunnelling. △ Less

Submitted 29 July, 1999; originally announced July 1999.

Comments: 4 pages, 4 Postscript figures

Journal ref: Phys. Rev. Lett. 83, 160 (1999)

Spin-dependent transport in a clean one-dimensional channel

Authors: C. -T. Liang, M. Y. Simmons, C. G. Smith, G. H. Kim, D. A. Ritchie, M. Pepper

Abstract: A shoulder-like feature close to $(0.7\times 2e^{2}/h)$, "the 0.7 structure" at zero magnetic field was observed in clean one-dimensional (1D) channels [K.J. Thomas et al., Phys. Rev. Lett. 77, 135 (1996)]. To provide further understanding of this structure, we have performed low-temperature measurements of a novel design of 1D channel with overlaying finger gates to study the 0.7 structure as a… ▽ More A shoulder-like feature close to $(0.7\times 2e^{2}/h)$, "the 0.7 structure" at zero magnetic field was observed in clean one-dimensional (1D) channels [K.J. Thomas et al., Phys. Rev. Lett. 77, 135 (1996)]. To provide further understanding of this structure, we have performed low-temperature measurements of a novel design of 1D channel with overlaying finger gates to study the 0.7 structure as a function of lateral confinement strength and potential profile. We found that the structure persists when the lateral confinement strength is changed by a factor of 2. We have also shown that the 0.7 structure present in two 1D channels in series behaves like a single 1D channel which shows the 0.7 structure, demonstrating that the 0.7 structure is not a transmission effect through a ballistic channel at zero in-plane magnetic field. △ Less

Submitted 24 July, 1999; originally announced July 1999.

Comments: 4 pages, 7 figures, latex, to be published in Phys. Rev. B

Experimental Evidence for Coulomb Charging Effects in an Open Quantum Dot at Zero Magnetic Field

Authors: C. -T. Liang, M. Y. Simmons, C. G. Smith, G. H. Kim, D. A. Ritchie, M. Pepper

Abstract: We have measured the low-temperature transport properties of an open quantum dot formed in a clean one-dimensional channel. For the first time, at zero magnetic field, continuous and periodic oscillations superimposed upon ballistic conductance steps are observed when the conductance through the dot $G$ exceeds $2e^2/h$. We ascribe the observed conductance oscillations to evidence for Coulomb ch… ▽ More We have measured the low-temperature transport properties of an open quantum dot formed in a clean one-dimensional channel. For the first time, at zero magnetic field, continuous and periodic oscillations superimposed upon ballistic conductance steps are observed when the conductance through the dot $G$ exceeds $2e^2/h$. We ascribe the observed conductance oscillations to evidence for Coulomb charging effects in an open dot. This is supported by the evolution of the oscillating features for $G>2e^2/h$ as a function of both temperature and barrier transparency. Our results strongly suggest that at zero magnetic field, current theoretical and experimental understanding of Coulomb charging effects overlooks charging in the presence of fully transmitted 1D channels. △ Less

Submitted 25 September, 1998; originally announced September 1998.

Comments: To appear in Phys. Rev. Lett. 81 (Oct 19 issue)

Journal ref: Phys. Rev. Lett. 81, 3507 (1998).

Experimental studies of T--shaped quantum dot transistors: phase-coherent electron transport

Authors: C. -T. Liang, J. E. F. Frost, M. Pepper, D. A. Ritchie, G. A. C. Jones

Abstract: We have measured the low-temperature transport properties of a T-shaped quantum dot. Replicated oscillations superimposed on one-dimensional conductance steps are observed. These structures are consistent with electron phase-coherent length resonance effects in the ballistic regime. Using a simple model, we suggest that both one-dimensional and two-dimensional electron-electron scattering gives… ▽ More We have measured the low-temperature transport properties of a T-shaped quantum dot. Replicated oscillations superimposed on one-dimensional conductance steps are observed. These structures are consistent with electron phase-coherent length resonance effects in the ballistic regime. Using a simple model, we suggest that both one-dimensional and two-dimensional electron-electron scattering gives rise to electron phase-breaking in our system. △ Less

Submitted 27 August, 1997; originally announced August 1997.

Comments: 9 pages, TeX, to be published in Solid State Communications

Journal ref: Solid State Communications 105, 109 (1998).

Experimental evidence of a metal-insulator transition in a half-filled Landau level

Authors: C. -T. Liang, J. E. F. Frost, M. Y. Simmons, D. A. Ritchie, M. Pepper

Abstract: We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al_{0.33}Ga_{0.67}As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau level filling factor $ν=1/2$, where the system can be described by the composite fermion picture, we observe a crossover from metallic to insulating behaviour as… ▽ More We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al_{0.33}Ga_{0.67}As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau level filling factor $ν=1/2$, where the system can be described by the composite fermion picture, we observe a crossover from metallic to insulating behaviour as the disorder is increased. Experimental results and theoretical prediction are compared. △ Less

Submitted 9 January, 1997; originally announced January 1997.

Comments: To be published in Solid State Communications. 4 figures

Resonant transmission through an open quantum dot

Authors: C. -T. Liang, I. M. Castleton, J. E. F. Frost, C. H. W. Barnes, C. G. Smith, C. J. B. Ford, D. A. Ritchie, M. Pepper

Abstract: We have measured the low-temperature transport properties of a quantum dot formed in a one-dimensional channel. In zero magnetic field this device shows quantized ballistic conductance plateaus with resonant tunneling peaks in each transition region between plateaus. Studies of this structure as a function of applied perpendicular magnetic field and source-drain bias indicate that resonant struc… ▽ More We have measured the low-temperature transport properties of a quantum dot formed in a one-dimensional channel. In zero magnetic field this device shows quantized ballistic conductance plateaus with resonant tunneling peaks in each transition region between plateaus. Studies of this structure as a function of applied perpendicular magnetic field and source-drain bias indicate that resonant structure deriving from tightly bound states is split by Coulomb charging at zero magnetic field. △ Less

Submitted 9 January, 1997; originally announced January 1997.

Comments: To be published in Phys. Rev. B (1997). 8 LaTex pages with 5 figures

Journal ref: Phys. Rev. B 55, 6723 (1997)

Ballistic Composite Fermions in Semiconductor Nanostructures

Authors: J. E. F. Frost, C. -T. Liang, D. R. Mace, M. Y. Simmons, D. A. Ritchie, M. Pepper

Abstract: We report the results of two fundamental transport measurements at a Landau level filling factor $ν$ of 1/2. The well known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative magnetoresistance of a constriction are observed close to B~=~0 and $ν~=~ 1/2$. The experimental results demonstrate semi-classical charge transport by composi… ▽ More We report the results of two fundamental transport measurements at a Landau level filling factor $ν$ of 1/2. The well known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative magnetoresistance of a constriction are observed close to B~=~0 and $ν~=~ 1/2$. The experimental results demonstrate semi-classical charge transport by composite fermions, which consist of electrons bound to an even number of flux quanta. △ Less

Submitted 17 January, 1996; originally announced January 1996.

Comments: 9 pages TeX 3.1415 C version 6.1, 3 PostScript figures