Coherent versus Incoherent Light Scattering from a Quantum Dot
Authors:
K. Konthasinghe,
J. Walker,
M. Peiris,
C. K. Shih,
Y. Yu,
M. F. Li,
J. F. He,
L. J. Wang,
H. Q. Ni,
Z. C. Niu,
A. Muller
Abstract:
We analyze the light scattered by a single InAs quantum dot interacting with a resonant continuous-wave laser. High resolution spectra reveal clear distinctions between coherent and incoherent scattering, with the laser intensity spanning over four orders of magnitude. We find that the fraction of coherently scattered photons can approach unity under sufficiently weak or detuned excitation, ruling…
▽ More
We analyze the light scattered by a single InAs quantum dot interacting with a resonant continuous-wave laser. High resolution spectra reveal clear distinctions between coherent and incoherent scattering, with the laser intensity spanning over four orders of magnitude. We find that the fraction of coherently scattered photons can approach unity under sufficiently weak or detuned excitation, ruling out pure dephasing as a relevant decoherence mechanism. We show how spectral diffusion shapes spectra, correlation functions, and phase-coherence, concealing the ideal radiatively-broadened two-level system described by Mollow.
△ Less
Submitted 20 June, 2012;
originally announced June 2012.
Pseudo-potential Band Structure Calculation of InSb Ultra-thin Films and its application to assess the n-Metal-Oxide-Semiconductor Transistor Performance
Authors:
Zhen Gang Zhu,
Tony Low,
Ming Fu Li,
Wei Jun Fan,
P. Bai,
D. L. Kwong,
G. Samudra
Abstract:
Band structure of InSb thin films with $<100>$ surface orientation is calculated using empirical pseudopotential method (EPM) to evaluate the performance of nanoscale devices using InSb substrate. Contrary to the predictions by simple effective mass approximation methods (EMA), our calculation reveals that $Γ$ valley is still the lowest lying conduction valley. Based on EPM calculations, we obtain…
▽ More
Band structure of InSb thin films with $<100>$ surface orientation is calculated using empirical pseudopotential method (EPM) to evaluate the performance of nanoscale devices using InSb substrate. Contrary to the predictions by simple effective mass approximation methods (EMA), our calculation reveals that $Γ$ valley is still the lowest lying conduction valley. Based on EPM calculations, we obtained the important electronic structure and transport parameters, such as effective mass and valley energy minimum, of InSb thin film as a function of film thickness. Our calculations reveal that the 'effective mass' of $Γ$ valley electrons increases with the scaling down of the film thickness. We also provide an assessment of nanoscale InSb thin film devices using Non-Equilibrium Green's Function under the effective mass framework in the ballistic regime.
△ Less
Submitted 20 September, 2011;
originally announced September 2011.
