Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV
Authors:
Adam T. Neal,
Shin Mou,
Roberto Lopez,
Jian V. Li,
Darren B. Thomson,
Kelson D. Chabak,
Gregg H. Jessen
Abstract:
Understanding the origin of unintentional do** in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional do** in Ga2O3. Previously unobserved unintentional donors in commercially available (-201) Ga2O3 substrates have been electrically characterize…
▽ More
Understanding the origin of unintentional do** in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional do** in Ga2O3. Previously unobserved unintentional donors in commercially available (-201) Ga2O3 substrates have been electrically characterized via temperature dependent Hall effect measurements up to 1000 K and found to have a donor energy of 110 meV. The existence of the unintentional donor is confirmed by temperature dependent admittance spectroscopy, with an activation energy of 131 meV determined via that technique, in agreement with Hall effect measurements. With the concentration of this donor determined to be in the mid to high 10^16 cm^-3 range, elimination of this donor from the drift layer of Ga2O3 power electronics devices will be key to pushing the limits of device performance. Indeed, analytical assessment of the specific on-resistance (Ronsp) and breakdown voltage of Schottky diodes containing the 110 meV donor indicates that incomplete ionization increases Ronsp and decreases breakdown voltage as compared to Ga2O3 Schottky diodes containing only the shallow donor. The reduced performance due to incomplete ionization occurs in addition to the usual tradeoff between Ronsp and breakdown voltage. To achieve 10 kV operation in Ga2O3 Schottky diode devices, analysis indicates that the concentration of 110 meV donors must be reduced below 5x10^14 cm^-3 to limit the increase in Ronsp to one percent.
△ Less
Submitted 28 July, 2017; v1 submitted 29 June, 2017;
originally announced June 2017.
Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells
Authors:
Christopher P. Muzzillo,
Jian V. Li,
Lorelle M. Mansfield,
Kannan Ramanathan,
Timothy J. Anderson
Abstract:
To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIGS) photovoltaic (PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PV performance. First, the effect of distributing K throughout bulk Cu1-xKxInSe2 absorbers at low K/(K+Cu) compositions (0 <= x <= 0.30) was studied. Efficiency, open-circuit voltage (VOC), and fill factor (FF) were greatly enhanced for x ~ 0.07, re…
▽ More
To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIGS) photovoltaic (PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PV performance. First, the effect of distributing K throughout bulk Cu1-xKxInSe2 absorbers at low K/(K+Cu) compositions (0 <= x <= 0.30) was studied. Efficiency, open-circuit voltage (VOC), and fill factor (FF) were greatly enhanced for x ~ 0.07, resulting in an officially-measured 15.0%-efficient solar cell, matching to the world record CuInSe2 efficiency. The improvements were a result of reduced interface and bulk recombination, relative to CuInSe2 (x ~ 0). However, higher x compositions had reduced efficiency, short-circuit current density (JSC), and FF due to greatly increased interface recombination, relative to the x ~ 0 baseline. Next, the effect of confining K at the absorber/buffer interface at high K/(K+Cu) compositions (0.30 <= x <= 0.92) was researched. Previous work showed that these surface layer growth conditions produced CuInSe2 with a large phase fraction of KInSe2. After optimization (75 nm surface layer with x ~ 0.41), these KInSe2 surface samples exhibited increased efficiency (officially 14.9%), VOC, and FF as a result of decreased interface recombination. The KInSe2 surfaces had features similar to previous reports for KF post-deposition treatments (PDTs) used in world record CIGS solar cells-taken as indirect evidence that KInSe2 can form during these PDTs. Both the bulk and surface growth processes greatly reduced interface recombination. However, the KInSe2 surface had higher K levels near the surface, greater lifetimes, and increased inversion near the buffer interface, relative to the champion bulk CKIS absorber. These characteristics demonstrate that K may benefit PV performance by different mechanisms at the surface and in the absorber bulk.
△ Less
Submitted 18 March, 2017;
originally announced April 2017.
