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Electroluminescence from indirect band gap semiconductor ReS$_2$
Authors:
Ignacio Gutiérrez Lezama,
Bojja Aditya Reddy,
Nicolas Ubrig,
Alberto F. Morpurgo
Abstract:
It has been recently claimed that bulk crystals of transition metal dichalcogenide (TMD) ReS$_2$ are direct band gap semiconductors, which would make this material an ideal candidate, among all TMDs, for the realization of efficient opto-electronic devices. The situation is however unclear, because even more recently an indirect transition in the photoluminescence spectra of this material has been…
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It has been recently claimed that bulk crystals of transition metal dichalcogenide (TMD) ReS$_2$ are direct band gap semiconductors, which would make this material an ideal candidate, among all TMDs, for the realization of efficient opto-electronic devices. The situation is however unclear, because even more recently an indirect transition in the photoluminescence spectra of this material has been detected, whose energy is smaller than the supposed direct gap. To address this issue we exploit the properties of ionic liquid gated field-effect transistors (FETs) to investigate the gap structure of bulk ReS$_2$. Using these devices, whose high quality is demonstrated by a record high electron FET mobility of 1,100 cm$^2$/Vs at 4K, we can induce hole transport at the surface of the material and determine quantitatively the smallest band gap present in the material, irrespective of its direct or indirect nature. The value of the band gap is found to be 1.41 eV, smaller than the 1.5 eV direct optical transition but in good agreement with the energy of the indirect optical transition, providing an independent confirmation that bulk ReS$_2$ is an indirect band gap semiconductor. Nevertheless, contrary to the case of more commonly studied semiconducting TMDs (e.g., MoS$_2$, WS$_2$, etc.) in their bulk form, we also find that ReS$_2$ FETs fabricated on bulk crystals do exhibit electroluminescence when driven in the ambipolar injection regime, likely because the difference between the direct and indirect gap is only 100 meV. We conclude that ReS$_2$ does deserve more in-depth investigations in relation to possible opto-electronic applications.
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Submitted 4 October, 2016;
originally announced October 2016.
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Tuning the charge transfer in Fx-TCNQ/rubrene single-crystal interfaces
Authors:
Yulia Krupskaya,
Ignacio Gutiérrez Lezama,
Alberto F. Morpurgo
Abstract:
Interfaces formed by two different organic semiconductors often exhibit a large conductivity, originating from transfer of charge between the constituent materials. The precise mechanisms driving charge transfer and determining its magnitude remain vastly unexplored, and are not understood microscopically. To start addressing this issue, we have performed a systematic study of highly reproducible…
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Interfaces formed by two different organic semiconductors often exhibit a large conductivity, originating from transfer of charge between the constituent materials. The precise mechanisms driving charge transfer and determining its magnitude remain vastly unexplored, and are not understood microscopically. To start addressing this issue, we have performed a systematic study of highly reproducible single-crystal interfaces based on rubrene and Fx-TCNQ, a family of molecules whose electron affinity can be tuned by increasing the fluorine content. The combined analysis of transport and scanning Kelvin probe measurements reveals that the interfacial charge carrier density, resistivity, and activation energy correlate with the electron affinity of Fx-TCNQ crystals, with a higher affinity resulting in larger charge transfer. Although the transport properties can be described consistently and quantitatively using a mobility-edge model, we find that a quantitative analysis of charge transfer in terms of single-particle band diagrams reveals a discrepancy ~ 100 meV in the interfacial energy level alignment. We attribute the discrepancy to phenomena known to affect the energetics of organic semiconductors, which are neglected by a single-particle description, such as molecular relaxation and band-gap renormalization due to screening. The systematic behavior of the Fx-TCNQ/rubrene interfaces opens the possibility to investigate these phenomena experimentally, under controlled conditions.
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Submitted 29 February, 2016; v1 submitted 18 December, 2015;
originally announced December 2015.
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Collapse of the Mott gap and emergence of a nodal liquid in lightly doped Sr$_2$IrO$_4$
Authors:
A. de la Torre,
S. McKeown Walker,
F. Y. Bruno,
S. Ricco,
Z. Wang,
I. Gutierrez Lezama,
G. Scheerer,
G. Giriat,
D. Jaccard,
C. Berthod,
T. K. Kim,
M. Hoesch,
E. C. Hunter,
R. S. Perry,
A. Tamai,
F. Baumberger
Abstract:
Superconductivity in underdoped cuprates emerges from an unusual electronic state characterised by nodal quasiparticles and an antinodal pseudogap. The relation between this state and superconductivity is intensely studied but remains controversial. The discrimination between competing theoretical models is hindered by a lack of electronic structure data from related doped Mott insulators. Here we…
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Superconductivity in underdoped cuprates emerges from an unusual electronic state characterised by nodal quasiparticles and an antinodal pseudogap. The relation between this state and superconductivity is intensely studied but remains controversial. The discrimination between competing theoretical models is hindered by a lack of electronic structure data from related doped Mott insulators. Here we report the do** evolution of the Heisenberg antiferromagnet Sr$_2$IrO$_4$, a close analogue to underdoped cuprates. We demonstrate that metallicity emerges from a rapid collapse of the Mott gap with do**, resulting in lens-like Fermi contours rather than disconnected Fermi arcs as observed in cuprates. Intriguingly though, the emerging electron liquid shows nodal quasiparticles with an antinodal pseudogap and thus bares strong similarities with underdoped cuprates. We conclude that anisotropic pseudogaps are a generic property of two-dimensional doped Mott insulators rather than a unique hallmark of cuprate high-temperature superconductivity.
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Submitted 1 June, 2015;
originally announced June 2015.
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Surface transport and band gap structure of exfoliated 2H-MoTe$_2$ crystals
Authors:
Ignacio Gutiérrez Lezama,
Alberto Ubaldini,
Maria Longobardi,
Enrico Giannini,
Christoph Renner,
Alexey B. Kuzmenko,
Alberto F. Morpurgo
Abstract:
Semiconducting transition metal dichalcogenides (TMDs) have emerged as materials that can be used to realize two-dimensional (2D) crystals possessing rather unique transport and optical properties. Most research has so far focused on sulfur and selenium compounds, while tellurium-based materials attracted little attention so far. As a first step in the investigation of Te-based semiconducting TMDs…
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Semiconducting transition metal dichalcogenides (TMDs) have emerged as materials that can be used to realize two-dimensional (2D) crystals possessing rather unique transport and optical properties. Most research has so far focused on sulfur and selenium compounds, while tellurium-based materials attracted little attention so far. As a first step in the investigation of Te-based semiconducting TMDs in this context, we have studied MoTe$_2$ crystals with thicknesses above 4 nm, focusing on surface transport and a quantitative determination of the gap structure. Using ionic-liquid gated transistors, we show that ambipolar transport at the surface of the material is reproducibly achieved, with hole and electron mobility values between 10 and 30 cm$^2$/Vs at room temperature. The gap structure is determined through three different techniques: ionic-liquid gated transistors and scanning tunneling spectroscopy, that allow the measurement of the indirect gap ($E_{ind}$), and optical transmission spectroscopy on crystals of different thickness, that enables the determination of both the direct ($E_{dir}$) and the indirect gap. We find that at room temperature $E_{ind}$ = 0.88 eV and $E_{dir}$ = 1.02 eV. Our results suggest that thin MoTe$_2$ layers may exhibit a transition to a direct gap before mono-layer thickness. They should also drastically extend the range of direct gaps accessible in 2D semiconducting TMDs.
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Submitted 4 July, 2014;
originally announced July 2014.
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Progress in organic single-crystal field-effect transistors
Authors:
Ignacio Gutiérrez Lezama,
Alberto F. Morpurgo
Abstract:
Research on organic thin-film transistors tends to focus on improvements in device performance, but very little is understood about the ultimate limits of these devices, the microscopic physical mechanisms responsible for their limitations, and, more generally, the intrinsic transport properties of organic semiconductors. These topics are now being investigated through the study of transport in or…
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Research on organic thin-film transistors tends to focus on improvements in device performance, but very little is understood about the ultimate limits of these devices, the microscopic physical mechanisms responsible for their limitations, and, more generally, the intrinsic transport properties of organic semiconductors. These topics are now being investigated through the study of transport in organic transistors realized using molecular single crystals of unprecedented chemical purity and structural quality. These studies are elucidating detailed microscopic aspects of the physics of organic semiconductors and corresponding devices and have also led to unforeseen high values for carrier mobility in these materials. Here, we discuss developments in this area and present a brief outlook on future goals that have now come into experimental reach.
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Submitted 14 February, 2013;
originally announced February 2013.
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Single-Crystal Organic Charge-Transfer Interfaces probed using Schottky-Gated Heterostructures
Authors:
Ignacio Gutiérrez Lezama,
Masaki Nakano,
Nikolas A. Minder,
Zhihua Chen,
Flavia V. Di Girolamo,
Antonio Facchetti,
Alberto F. Morpurgo,
.
Abstract:
Organic semiconductors based on small conjugated molecules generally behave as insulators when undoped, but the hetero-interfaces of two such materials can show electrical conductivity as large as in a metal. Although charge transfer is commonly invoked to explain the phenomenon, the details of the process and the nature of the interfacial charge carriers remain largely unexplored. Here we use Sch…
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Organic semiconductors based on small conjugated molecules generally behave as insulators when undoped, but the hetero-interfaces of two such materials can show electrical conductivity as large as in a metal. Although charge transfer is commonly invoked to explain the phenomenon, the details of the process and the nature of the interfacial charge carriers remain largely unexplored. Here we use Schottky-gated heterostructures to probe the conducting layer at the interface between rubrene and PDIF-CN2 single crystals. Gate-modulated conductivity measurements demonstrate that interfacial transport is due to electrons, whose mobility exhibits band-like behavior from room temperature to ~ 150 K, and remains as high as ~ 1 cm2V-1s-1 at 30 K for the best devices. The electron density decreases linearly with decreasing temperature, an observation that can be explained quantitatively based on the heterostructure band diagram. These results elucidate the electronic structure of rubrene-PDIF-CN2 interfaces and show the potential of Schottky-gated organic heterostructures for the investigation of transport in molecular semiconductors.
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Submitted 8 February, 2013;
originally announced February 2013.
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Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
Authors:
Daniele Braga,
Ignacio Gutiérrez Lezama,
Helmuth Berger,
Alberto F. Morpurgo
Abstract:
We realized ambipolar Field-Effect Transistors by coupling exfoliated thin flakes of tungsten disulphide (WS2) with an ionic liquid-dielectric. The devices show ideal electrical characteristics, including very steep sub-threshold slopes for both electrons and holes and extremely low OFF-state currents. Thanks to these ideal characteristics, we determine with high precision the size of the band-gap…
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We realized ambipolar Field-Effect Transistors by coupling exfoliated thin flakes of tungsten disulphide (WS2) with an ionic liquid-dielectric. The devices show ideal electrical characteristics, including very steep sub-threshold slopes for both electrons and holes and extremely low OFF-state currents. Thanks to these ideal characteristics, we determine with high precision the size of the band-gap of WS2 directly from the gate-voltage dependence of the source-drain current. Our results demonstrate how a careful use of ionic liquid dielectrics offers a powerful strategy to study quantitatively the electronic properties of nano-scale materials.
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Submitted 6 February, 2013;
originally announced February 2013.
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Very low bias stress in n-type organic single crystal transistors
Authors:
Mario Barra,
Flavia V. Di Girolamo,
Nikolas A. Minder,
Ignacio Gutiérrez Lezama,
Zhihua Chen,
Antonio Facchetti,
Alberto F. Morpurgo,
Antonio Cassinese
Abstract:
Bias stress effects in n-channel organic field-effect transistors (OFETs) are investigated using PDIF-CN2 single-crystal devices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of bias stress is very small as compared to all (p-channel) OFETs reported in the literature. Stressing the PDIF-CN2 devices by applying 80 V to the gate for up to a week results in a d…
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Bias stress effects in n-channel organic field-effect transistors (OFETs) are investigated using PDIF-CN2 single-crystal devices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of bias stress is very small as compared to all (p-channel) OFETs reported in the literature. Stressing the PDIF-CN2 devices by applying 80 V to the gate for up to a week results in a decrease of the source drain current of only ~1% under vacuum and ~10% in air. This remarkable stability of the devices leads to characteristic time constants, extracted by fitting the data with a stretched exponential - that are τ~ 2\cdot10^9 s in air and τ~ 5\cdot10^9 s in vacuum - approximately two orders of magnitude larger than the best values reported previously for p-channel OFETs.
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Submitted 9 February, 2012;
originally announced February 2012.
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Threshold voltage and space charge in organic transistors
Authors:
I. Gutiérrez Lezama,
A. F. Morpurgo
Abstract:
We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift is due to space-charge transferred from the contacts, and can be modeled quantitatively without free fitting parameters, using Poisson's equation, and by assu…
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We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift is due to space-charge transferred from the contacts, and can be modeled quantitatively without free fitting parameters, using Poisson's equation, and by assuming that the density of states in rubrene is that of a conventional inorganic semiconductor. Our results demonstrate the consistency, at the quantitative level, of a variety of recent experiments on rubrene crystals, and show how the use of FET measurements can enable the determination of microscopic parameters (e.g., the effective mass of charge carriers).
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Submitted 14 July, 2009; v1 submitted 7 May, 2009;
originally announced May 2009.
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Quantitative analysis of electronic transport through weakly-coupled metal/organic interfaces
Authors:
A. S. Molinari,
I. Gutierrez Lezama,
P. Parisse,
T. Takenobu,
Y. Iwasa,
A. F. Morpurgo
Abstract:
Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be reproduced quantitatively in terms of the thermionic emission theory for Schottky diodes, if the effect of the bias-induced barrier lowering is included. Our analysis emph…
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Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be reproduced quantitatively in terms of the thermionic emission theory for Schottky diodes, if the effect of the bias-induced barrier lowering is included. Our analysis emphasizes the role of the coupling between metal and molecules, which in our devices is weak due to the presence of an oxide layer at the surface of the copper electrodes.
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Submitted 15 February, 2008;
originally announced February 2008.
