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DarkQuest: A dark sector upgrade to SpinQuest at the 120 GeV Fermilab Main Injector
Authors:
Aram Apyan,
Brian Batell,
Asher Berlin,
Nikita Blinov,
Caspian Chaharom,
Sergio Cuadra,
Zeynep Demiragli,
Adam Duran,
Yongbin Feng,
I. P. Fernando,
Stefania Gori,
Philip Harris,
Duc Hoang,
Dustin Keller,
Elizabeth Kowalczyk,
Monica Leys,
Kun Liu,
Ming Liu,
Wolfgang Lorenzon,
Petar Maksimovic,
Cristina Mantilla Suarez,
Hrachya Marukyan,
Amitav Mitra,
Yoshiyuki Miyachi,
Patrick McCormack
, et al. (14 additional authors not shown)
Abstract:
Expanding the mass range and techniques by which we search for dark matter is an important part of the worldwide particle physics program. Accelerator-based searches for dark matter and dark sector particles are a uniquely compelling part of this program as a way to both create and detect dark matter in the laboratory and explore the dark sector by searching for mediators and excited dark matter p…
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Expanding the mass range and techniques by which we search for dark matter is an important part of the worldwide particle physics program. Accelerator-based searches for dark matter and dark sector particles are a uniquely compelling part of this program as a way to both create and detect dark matter in the laboratory and explore the dark sector by searching for mediators and excited dark matter particles. This paper focuses on develo** the DarkQuest experimental concept and gives an outlook on related enhancements collectively referred to as LongQuest. DarkQuest is a proton fixed-target experiment with leading sensitivity to an array of visible dark sector signatures in the MeV-GeV mass range. Because it builds off of existing accelerator and detector infrastructure, it offers a powerful but modest-cost experimental initiative that can be realized on a short timescale.
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Submitted 15 March, 2022;
originally announced March 2022.
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Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern
Authors:
G. Brammertz,
M. Caymax,
Y. Mols,
S. Degroote,
M. Leys,
J. Van Steenbergen,
G. Winderickx,
G. Borghs,
M. Meuris
Abstract:
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth is fully selective, thanks to an optimized growth procedure, consisting of a 13 nm thin nucleation layer grown at high pressure, followed by low pressure growth o…
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We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth is fully selective, thanks to an optimized growth procedure, consisting of a 13 nm thin nucleation layer grown at high pressure, followed by low pressure growth of GaAs. This growth procedure inhibits the nucleation of GaAs on the mask area and is a good compromise between reduction of loading effects and inhibition of anti phase domain growth in the GaAs. Nevertheless, both microscopic and macroscopic loading effects can still be observed on x-section SEM images and profilometer measurements. X-ray diffraction and low temperature photoluminescence measurements demonstrate the good microscopic characteristics of the selectively grown GaAs.
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Submitted 26 March, 2007;
originally announced March 2007.
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Selective epitaxial growth of GaAs on Ge by MOCVD
Authors:
Guy Brammertz,
Yves Mols,
Stefan Degroote,
Maarten Leys,
Jan Van Steenbergen,
Gustaaf Borghs,
Matty Caymax
Abstract:
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth with the standard growth procedure for GaAs growth on Ge substrates reveals a limited amount of GaAs nucleation on the mask area and strong loading effects caused…
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We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth with the standard growth procedure for GaAs growth on Ge substrates reveals a limited amount of GaAs nucleation on the mask area and strong loading effects caused by diffusion of group III precursors over the mask area and in the gas phase. Reduction of the growth pressure inhibits GaAs nucleation on the mask area and reduces the loading effects strongly, but favors the creation of anti phase domains in the GaAs. An optimized growth procedure was developed, consisting of a 13 nm thin nucleation layer grown at high pressure, followed by low pressure growth of GaAs. This optimized growth procedure inhibits the nucleation of GaAs on the mask area and is a good compromise between reduction of loading effects and inhibition of anti phase domain growth in the GaAs. X-ray diffraction and photoluminescence measurements demonstrate the good microscopic characteristics of the selectively grown layers.
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Submitted 26 March, 2007;
originally announced March 2007.
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Low temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates
Authors:
Guy Brammertz,
Yves Mols,
Stefan Degroote,
Vasyl Motsnyi,
Maarten Leys,
Gustaaf Borghs,
Matty Caymax
Abstract:
Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si do** levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substrates and extensively analyzed by low-temperature photoluminescence (PL) spectroscopy.
Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si do** levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substrates and extensively analyzed by low-temperature photoluminescence (PL) spectroscopy.
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Submitted 26 March, 2007;
originally announced March 2007.
