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Strong polarization mode coupling in microresonators
Authors:
Sven Ramelow,
Alessandro Farsi,
Stéphane Clemmen,
Jacob S. Levy,
Adrea R. Johnson,
Yoshitomo Okawachi,
Michael. R. E. Lamont,
Michal Lipson,
Alexander L. Gaeta
Abstract:
We observe strong modal coupling between the TE00 and TM00 modes in Si3N4 ring resonators revealed by avoided crossings of the corresponding resonances. Such couplings result in significant shifts of the resonance frequencies over a wide range around the crossing points. This leads to an effective dispersion that is one order of magnitude larger than the intrinsic dispersion and creates broad wind…
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We observe strong modal coupling between the TE00 and TM00 modes in Si3N4 ring resonators revealed by avoided crossings of the corresponding resonances. Such couplings result in significant shifts of the resonance frequencies over a wide range around the crossing points. This leads to an effective dispersion that is one order of magnitude larger than the intrinsic dispersion and creates broad windows of anomalous dispersion. We also observe the changes to frequency comb spectra generated in Si3N4 microresonators due polarization mode and higher-order mode crossings and suggest approaches to avoid these effects. Alternatively, such polarization mode-crossings can be used as a novel tool for dispersion engineering in microresonators.
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Submitted 20 May, 2014;
originally announced May 2014.
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Microresonator-Based Comb Generation without an External Laser Source
Authors:
Adrea R. Johnson,
Yoshitomo Okawachi,
Michael R. E. Lamont,
Jacob S. Levy,
Michal Lipson,
Alexander L. Gaeta
Abstract:
Recent developments demonstrate that parametric four-wave mixing (FWM) in high-Q microresonators is a highly promising and effective approach for optical frequency comb generation, with applications including spectroscopy, optical clocks, arbitrary waveform generation, frequency metrology, and astronomical spectrograph calibration. Each of these microresonator platforms utilizes a scheme in which…
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Recent developments demonstrate that parametric four-wave mixing (FWM) in high-Q microresonators is a highly promising and effective approach for optical frequency comb generation, with applications including spectroscopy, optical clocks, arbitrary waveform generation, frequency metrology, and astronomical spectrograph calibration. Each of these microresonator platforms utilizes a scheme in which the system is pumped by a single-frequency laser at a cavity resonance. This scheme requires tuning of the pump wavelength into resonance and the generated comb is susceptible to fluctuations in pump power or frequency which can disrupt the soft thermal lock and comb generation. We demonstrate a novel fiber-microresonator dual-cavity architecture that preferentially oscillates at modes of the microresonator due to its high density of states and generates robust and broadband combs (> 900 nm) without an external pump laser. Such a scheme could greatly simplify the comb generation process and allow for a fully-integrated chip-scale source with an on-chip amplifier.
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Submitted 22 May, 2013; v1 submitted 8 May, 2013;
originally announced May 2013.
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Modelocking and Femtosecond Pulse Generation in Chip-Based Frequency Combs
Authors:
Kasturi Saha,
Yoshitomo Okawachi,
Bonggu Shim,
Jacob S. Levy,
Reza Salem,
Adrea R. Johnson,
Mark A. Foster,
Michael R. E. Lamont,
Michal Lipson,
Alexander L. Gaeta
Abstract:
Development of ultrashort pulse sources has had an immense impact on condensed-matter physics, biomedical imaging, high-field physics, frequency metrology, telecommunications, nonlinear optics, and molecular spectroscopy. Although numerous advancements of such sources have been made, it remains a challenge to create a highly compact, robust platform capable of producing femtosecond pulses over a w…
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Development of ultrashort pulse sources has had an immense impact on condensed-matter physics, biomedical imaging, high-field physics, frequency metrology, telecommunications, nonlinear optics, and molecular spectroscopy. Although numerous advancements of such sources have been made, it remains a challenge to create a highly compact, robust platform capable of producing femtosecond pulses over a wide range of wavelengths, durations, and repetition rates. Recent observations of frequency comb generation via cascaded parametric oscillation in microresonators11 suggest a path for achieving this goal. Here we investigate the temporal and spectral properties of parametric combs generated in silicon-nitride microresonators and observe a transition to passive modelocking of the comb consistent with soliton-pulse formation, resulting in the generation of 160-fs pulses at a 99-GHz repetition rate. This platform offers the prospect of producing pulses from 10 fs to a few ps at repetition rates from 10 GHz to > 1 THz and over a wavelength range of 0.8 - 6 μm.
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Submitted 15 November, 2012; v1 submitted 5 November, 2012;
originally announced November 2012.
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Octave-spanning frequency comb generation in a silicon nitride chip
Authors:
Yoshitomo Okawachi,
Kasturi Saha,
Jacob S. Levy,
Y. Henry Wen,
Michal Lipson,
Alexander L. Gaeta
Abstract:
We demonstrate a frequency comb spanning an octave via the parametric process of cascaded four-wave mixing in a monolithic, high-Q silicon nitride microring resonator. The comb is generated from a single-frequency pump laser at 1562 nm and spans 128 THz with a spacing of 226 GHz, which can be tuned slightly with the pump power. In addition, we investigate the RF-noise characteristics of the parame…
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We demonstrate a frequency comb spanning an octave via the parametric process of cascaded four-wave mixing in a monolithic, high-Q silicon nitride microring resonator. The comb is generated from a single-frequency pump laser at 1562 nm and spans 128 THz with a spacing of 226 GHz, which can be tuned slightly with the pump power. In addition, we investigate the RF-noise characteristics of the parametric comb and find that the comb can operate in a low-noise state with a 30-dB reduction in noise as the pump frequency is tuned into the cavity resonance.
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Submitted 27 July, 2011;
originally announced July 2011.
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High-Performance Silicon-Based Multiple Wavelength Source
Authors:
Jacob S. Levy,
Kasturi Saha,
Yoshitomo Okawachi,
Mark A. Foster,
Alexander L. Gaeta,
Michal Lipson
Abstract:
We demonstrate a stable CMOS-compatible on-chip multiple-wavelength source by filtering and modulating individual lines from a frequency comb generated by a microring resonator optical parametric oscillator.. We show comb operation in a low-noise state that is stable and usable for many hours. Bit-error rate measurements demonstrate negligible power penalty from six independent frequencies when co…
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We demonstrate a stable CMOS-compatible on-chip multiple-wavelength source by filtering and modulating individual lines from a frequency comb generated by a microring resonator optical parametric oscillator.. We show comb operation in a low-noise state that is stable and usable for many hours. Bit-error rate measurements demonstrate negligible power penalty from six independent frequencies when compared to a tunable diode laser baseline. Open eye diagrams confirm the fidelity of the 10 Gb/s data transmitted at the comb frequencies and the suitability of this device for use as a fully integrated silicon-based WDM source.
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Submitted 14 June, 2011;
originally announced June 2011.
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A Silicon-Based Monolithic Optical Frequency Comb Source
Authors:
Mark A. Foster,
Jacob S. Levy,
Onur Kuzucu,
Kasturi Saha,
Michal Lipson,
Alexander L. Gaeta
Abstract:
Recently developed techniques for generating precisely equidistant optical frequencies over broad wavelength ranges are revolutionizing precision physical measurement [1-3]. These frequency "combs" are produced primarily using relatively large, ultrafast laser systems. However, recent research has shown that broad-bandwidth combs can be produced using highly-nonlinear interactions in microresonato…
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Recently developed techniques for generating precisely equidistant optical frequencies over broad wavelength ranges are revolutionizing precision physical measurement [1-3]. These frequency "combs" are produced primarily using relatively large, ultrafast laser systems. However, recent research has shown that broad-bandwidth combs can be produced using highly-nonlinear interactions in microresonator optical parametric oscillators [4-11]. Such devices not only offer the potential for develo** extremely compact optical atomic clocks but are also promising for astronomical spectroscopy [12-14], ultrashort pulse sha** [15], and ultrahigh-speed communications systems. Here we demonstrate the generation of broad-bandwidth optical frequency combs from a CMOS-compatible integrated microresonator [16,17], which is a fully-monolithic and sealed chip-scale device making it insensitive to the surrounding environment. We characterize the comb quality using a novel self-referencing method and verify that the comb line frequencies are equidistant over a bandwidth that is nearly an order of magnitude larger than previous measurements. In addition, we investigate the ultrafast temporal properties of the comb and demonstrate its potential to serve as a chip-scale source of ultrafast (sub-ps) pulses.
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Submitted 1 February, 2011;
originally announced February 2011.
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Second-Harmonic Generation in Silicon Nitride Ring Resonators
Authors:
Jacob S. Levy,
Mark A. Foster,
Alexander L. Gaeta,
Michal Lipson
Abstract:
The emerging field of silicon photonics seeks to unify the high bandwidth of optical communications with CMOS microelectronic circuits. Many components have been demonstrated for on-chip optical communications, including those that utilize the nonlinear optical properties of silicon[1, 2], silicon dioxide[3, 4] and silicon nitride[5, 6]. Processes such as second harmonic generation, which are enab…
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The emerging field of silicon photonics seeks to unify the high bandwidth of optical communications with CMOS microelectronic circuits. Many components have been demonstrated for on-chip optical communications, including those that utilize the nonlinear optical properties of silicon[1, 2], silicon dioxide[3, 4] and silicon nitride[5, 6]. Processes such as second harmonic generation, which are enabled by the second-order susceptibility, have not been developed since the bulk $χ^{(2)}$ vanishes in these centrosymmetric CMOS materials. Generating the lowest-order nonlinearity would open the window to a new array of CMOS-compatible optical devices capable of nonlinear functionalities not achievable with the?$χ^{(3)}$ response such as electro-optic modulation, sum frequency up-conversion, and difference frequency generation. Here we demonstrate second harmonic (SH) generation in CMOS compatible integrated silicon nitride (Si3N4) waveguides. The $χ^{(2)}$ response is induced in the centrosymmetric material by using the nanoscale structure to break the bulk symmetry. We use a high quality factor Q ring resonator cavity to enhance the efficiency of the nonlinear optical process and detect SH output with milliwatt input powers.
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Submitted 28 October, 2010;
originally announced October 2010.
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Monolithically integrated multiple wavelength oscillator on silicon
Authors:
Jacob S. Levy,
Alexander Gondarenko,
Mark A. Foster,
Amy C. Turner-Foster,
Alexander L. Gaeta,
Michal Lipson
Abstract:
Silicon photonics enables on-chip ultra-high bandwidth optical communications networks which is critical for the future of microelectronics1,2. By encoding information on-chip using multiple wavelength channels through the process of wavelength division multiplexing (WDM), communication bandwidths in excess of 1 Tbit s-1 are possible3. Already several optical components critical to WDM networks…
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Silicon photonics enables on-chip ultra-high bandwidth optical communications networks which is critical for the future of microelectronics1,2. By encoding information on-chip using multiple wavelength channels through the process of wavelength division multiplexing (WDM), communication bandwidths in excess of 1 Tbit s-1 are possible3. Already several optical components critical to WDM networks have been demonstrated in silicon, however a fully integrated multiple wavelength source capable of driving such a network has not yet been realized. Optical amplification, a necessary component for producing a source, can be achieved in silicon through stimulated Raman scattering4,5, parametric mixing6, and the use of silicon nanocrystals7 or nanopatterned silicon8. Losses in most of these previously demonstrated devices have prevented oscillations in those structures. Raman oscillators have been demonstrated9-11, but the narrow Raman gain window limits operation to a tightly restricted (~ 1 nm) wavelength range and thus is insufficient for WDM. Losses in other previously demonstrated devices have prevented oscillations in those structures. Here we demonstrate the first monolithically integrated CMOS-compatible multiple wavelength source by creating an optical parametric oscillator (OPO) formed by a silicon nitride ring resonator on silicon coupled to an integrated waveguide. The device can generate more than 100 new wavelengths, spaced by a few nm, with operating powers below 50 mW. This source can form the backbone of a fully operational high-bandwidth optical communications network on a microelectronic chip enabling the next generation of multi-core microprocessors.
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Submitted 9 July, 2009; v1 submitted 6 July, 2009;
originally announced July 2009.