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Effect of dynamical screening in the Bethe-Salpeter framework: Excitons in crystalline naphthalene
Authors:
Xiao Zhang,
Joshua A. Leveillee,
André Schleife
Abstract:
Solving the Bethe-Salpeter equation (BSE) for the optical polarization functions is a first principles means to model optical properties of materials including excitonic effects. One almost ubiquitously used approximation neglects the frequency dependence of the screened electron-hole interaction. This is commonly justified by the large difference in magnitude of electronic plasma frequency and ex…
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Solving the Bethe-Salpeter equation (BSE) for the optical polarization functions is a first principles means to model optical properties of materials including excitonic effects. One almost ubiquitously used approximation neglects the frequency dependence of the screened electron-hole interaction. This is commonly justified by the large difference in magnitude of electronic plasma frequency and exciton binding energy. We incorporated dynamical effects into the screening of the electron-hole interaction in the BSE using two different approximations as well as exact diagonalization of the exciton Hamiltonian. We compare these approaches for a naphthalene organic crystal, for which the difference between exciton binding energy and plasma frequency is only about a factor of ten. Our results show that in this case, corrections due to dynamical screening are about 15\,\% of the exciton binding energy. We analyze the effect of screening dynamics on optical absorption across the visible spectral range and use our data to establish an \emph{effective} screening model as a computationally efficient approach to approximate dynamical effects in complex materials in the future.
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Submitted 15 June, 2023; v1 submitted 15 February, 2023;
originally announced February 2023.
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Ab initio theory of free-carrier absorption in semiconductors
Authors:
Xiao Zhang,
Guangsha Shi,
Joshua A. Leveillee,
Feliciano Giustino,
Emmanouil Kioupakis
Abstract:
The absorption of light by free carriers in semiconductors results in optical loss for all photon wavelengths. Since free-carrier absorption competes with optical transitions across the band gap, it also reduces the efficiency of optoelectronic devices such as solar cells because it does not generate electron-hole pairs. In this work, we develop a first-principles theory of free-carrier absorption…
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The absorption of light by free carriers in semiconductors results in optical loss for all photon wavelengths. Since free-carrier absorption competes with optical transitions across the band gap, it also reduces the efficiency of optoelectronic devices such as solar cells because it does not generate electron-hole pairs. In this work, we develop a first-principles theory of free-carrier absorption taking into account both single-particle excitations and the collective Drude term, and we demonstrate its application to the case of doped Si. We determine the free-carrier absorption coefficient as a function of carrier concentration and we obtain excellent agreement with experimental data. We identify the dominant processes that contribute to free-carrier absorption at various photon wavelengths, and analyze the results to evaluate the impact of this loss mechanism on the efficiency of Si-based optoelectronic devices.
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Submitted 31 October, 2022; v1 submitted 5 May, 2022;
originally announced May 2022.
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Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry
Authors:
Steffen Richter,
Oliver Herrfurth,
Shirly Espinoza,
Mateusz Rebarz,
Miroslav Kloz,
Joshua A. Leveillee,
André Schleife,
Stefan Zollner,
Marius Grundmann,
Jakob Andreasson,
Rüdiger Schmidt-Grund
Abstract:
Many linked processes occur concurrently in strongly excited semiconductors, such as interband and intraband absorption, scattering of electrons and holes by the heated lattice, Pauli blocking, bandgap renormalization and the formation of Mahan excitons. In this work, we disentangle their dynamics and contributions to the optical response of a ZnO thin film. Using broadband pump-probe ellipsometry…
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Many linked processes occur concurrently in strongly excited semiconductors, such as interband and intraband absorption, scattering of electrons and holes by the heated lattice, Pauli blocking, bandgap renormalization and the formation of Mahan excitons. In this work, we disentangle their dynamics and contributions to the optical response of a ZnO thin film. Using broadband pump-probe ellipsometry, we can directly and unambiguously obtain the real and imaginary part of the transient dielectric function which we compare with first-principles simulations. We find interband and excitonic absorption partially blocked and screened by the photo-excited electron occupation of the conduction band and hole occupation of the valence band (absorption bleaching). Exciton absorption turns spectrally narrower upon pum** and sustains the Mott transition, indicating Mahan excitons. Simultaneously, intra-valence-band transitions occur at sub-picosecond time scales after holes scatter to the edge of the Brillouin zone. Our results pave new ways for the understanding of non-equilibrium charge-carrier dynamics in materials by reliably distinguishing between changes in absorption coefficient and refractive index, thereby separating competing processes. This information will help to overcome the limitations of materials for high-power optical devices that owe their properties from dynamics in the ultrafast regime.
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Submitted 27 July, 2020; v1 submitted 15 February, 2019;
originally announced February 2019.
