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Picosecond Femtojoule Resistive Switching in Nanoscale VO$_{2}$ Memristors
Authors:
S. W. Schmid,
L. Pósa,
T. N. Török,
B. Sánta,
Z. Pollner,
G. Molnár,
Y. Horst,
J. Volk,
J. Leuthold,
A. Halbritter,
M. Csontos
Abstract:
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable sou…
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Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable source of such functional complexity. However, its full potential in high-speed and low-power operation has been largely unexplored. We fabricated nanoscale VO$_{2}$ devices embedded in a broad-band test circuit to study the speed and energy limitations of their resistive switching operation. Our picosecond time-resolution, real-time resistive switching experiments and numerical simulations demonstrate that tunable low-resistance states can be set by the application of 20~ps long, $<$1.7~V amplitude voltage pulses at 15~ps incubation times and switching energies starting from a few femtojoule. Moreover, we demonstrate that at nanometer-scale device sizes not only the electric field induced insulator-to-metal transition, but also the thermal conduction limited metal-to-insulator transition can take place at timescales of 100's of picoseconds. These orders of magnitude breakthroughs open the route to the design of high-speed and low-power dynamical circuits for a plethora of neuromorphic computing applications from pattern recognition to numerical optimization.
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Submitted 20 March, 2024;
originally announced March 2024.
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Self-induced light emission in solid-state memristors replicates neuronal biophotons
Authors:
K. Malchow,
T. Zellweger,
B. Cheng,
A. Leray,
J. Leuthold,
A. Bouhelier
Abstract:
Key pre-synaptic and post-synaptic biological functions have been successfully implemented in various hardware systems. A noticeable example are neuronal networks constructed from memristors, which are emulating complex electro-chemical biological dynamics such a neuron's efficacy and plasticity. Neurons are highly active cells, communicating with chemical and electrical stimuli, but also emit lig…
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Key pre-synaptic and post-synaptic biological functions have been successfully implemented in various hardware systems. A noticeable example are neuronal networks constructed from memristors, which are emulating complex electro-chemical biological dynamics such a neuron's efficacy and plasticity. Neurons are highly active cells, communicating with chemical and electrical stimuli, but also emit light. These photons are suspected to be a complementary vehicle to transport information across the brain. Here, we show that a memristor also releases photons akin to the production of neuronal light. Critical attributes of so-called biophotons such as self-generation, origin, stochasticity, spectral coverage, sparsity and correlation with the neuron's activity are replicated by our solid-state approach. Our findings further extend the emulating capability of a memristor to encompass neuronal biophoton emission and open the possibility to construct a bimodal electro-optical platform with the assistance of atomic-scale devices capable of handling electrons and photons as information carriers.
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Submitted 23 January, 2024;
originally announced January 2024.
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Large-Scale Bottom-Up Fabricated 3D Nonlinear Photonic Crystals
Authors:
Viola Valentina Vogler-Neuling,
Ülle-Linda Talts,
Rebecca Ferraro,
Helena Weigand,
Giovanni Finco,
Joel Winiger,
Peter Benedek,
Justine Kusch,
Artemios Karvounis,
Vanessa Wood,
Jürg Leuthold,
Rachel Grange
Abstract:
Nonlinear optical effects are used to generate coherent light at wavelengths difficult to reach with lasers. Materials periodically poled or nanostructured in the nonlinear susceptibility in three spatial directions are called 3D nonlinear photonic crystals (NPhCs). They enable enhanced nonlinear optical conversion efficiencies, emission control, and simultaneous generation of nonlinear wavelength…
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Nonlinear optical effects are used to generate coherent light at wavelengths difficult to reach with lasers. Materials periodically poled or nanostructured in the nonlinear susceptibility in three spatial directions are called 3D nonlinear photonic crystals (NPhCs). They enable enhanced nonlinear optical conversion efficiencies, emission control, and simultaneous generation of nonlinear wavelengths. The chemical inertness of efficient second-order nonlinear materials ($χ^{(2)}$) prohibited their nanofabrication until 2018. The current method is restricted to top-down laser-based techniques limiting the periodicity along z-axis to 10 um. We demonstrate the first bottom-up fabricated 3D NPhC in sol-gel derived barium titanate by soft-nanoimprint lithography: a woodpile with eight layers and periodicities of 1 um (xy-plane) and 300 nm (z-plane). The surface areas exceed $5.3\cdot 10^4$ um^2, which is two orders of magnitude larger than the state-of-the-art. This study is expected to initiate bottom-up fabrication of 3D NPhCs with a supremely strong and versatile nonlinear response.
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Submitted 5 October, 2023;
originally announced October 2023.
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Autonomous neural information processing by a dynamical memristor circuit
Authors:
Dániel Molnár,
Tímea Nóra Török,
Roland Kövecs,
László Pósa,
Péter Balázs,
György Molnár,
Nadia Jimenez Olalla,
Juerg Leuthold,
János Volk,
Miklós Csontos,
András Halbritter
Abstract:
Analog tunable memristors are widely utilized as artificial synapses in various neural network applications. However, exploiting the dynamical aspects of their conductance change to implement active neurons is still in its infancy, awaiting the realization of efficient neural signal recognition functionalities. Here we experimentally demonstrate an artificial neural information processing unit tha…
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Analog tunable memristors are widely utilized as artificial synapses in various neural network applications. However, exploiting the dynamical aspects of their conductance change to implement active neurons is still in its infancy, awaiting the realization of efficient neural signal recognition functionalities. Here we experimentally demonstrate an artificial neural information processing unit that can detect a temporal pattern in a very noisy environment, fire a single output spike upon successful detection and reset itself in a fully unsupervised, autonomous manner. This circuit relies on the dynamical operation of only two memristive blocks: a non-volatile Ta$_2$O$_5$ device and a volatile VO$_2$ unit. A fading functionality with exponentially tunable memory time constant enables adaptive operation dynamics, which can be tailored for the targeted temporal pattern recognition task. In the trained circuit false input patterns only induce short-term variations. In contrast, the desired signal activates long-term memory operation of the non-volatile component, which triggers a firing output of the volatile block.
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Submitted 25 July, 2023;
originally announced July 2023.
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Sol-gel Barium Titanate Nanohole Array as a Nonlinear Metasurface and a Photonic Crystal
Authors:
Ülle-Linda Talts,
Helena C. Weigand,
Grégoire Saerens,
Peter Benedek,
Joel Winiger,
Vanessa Wood,
Jürg Leuthold,
Viola Vogler-Neuling,
Rachel Grange
Abstract:
The quest of a nonlinear optical material that can be easily nanostructured over a large surface area is still ongoing. Here, we demonstrate a nanoimprinted nonlinear barium titanate 2D nanohole array that shows optical properties of a 2D photonic crystal and metasurface, depending on the direction of the optical axis. The challenge of nanostructuring the inert metal-oxide is resolved by direct so…
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The quest of a nonlinear optical material that can be easily nanostructured over a large surface area is still ongoing. Here, we demonstrate a nanoimprinted nonlinear barium titanate 2D nanohole array that shows optical properties of a 2D photonic crystal and metasurface, depending on the direction of the optical axis. The challenge of nanostructuring the inert metal-oxide is resolved by direct soft nanoimprint lithography with sol-gel derived barium titanate enabling critical dimensions of 120 nm with aspect ratios of 5. The nanohole array exhibits a photonic bandgap in the infrared range when probed along the slab axis while lattice resonant states are observed in out-of-plane transmission configuration. The enhanced light-matter interaction from the resonant structure enables to increase the second-harmonic generation in the near-UV by a factor of 18 illustrating the potential in the flexible fabrication technique for barium titanate photonic devices.
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Submitted 21 July, 2023;
originally announced July 2023.
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Overbias Light Emission From Memristive Nanojunctions
Authors:
S. Hamdad,
K. Malchow,
E. Dujardin,
A. Bouhelier,
B. Cheng,
T. Zellweger,
J. Leuthold
Abstract:
A nanoscale dielectric gap clamped between two metal electrodes may undergo a large resistance change from insulating to highly conducting upon applying an electrical stress. This sudden resistive switching effect is largely exploited in memristors for emulating synapses in neuromorphic neural networks. Here, we show that resistive switching can be accompanied by a release of electromagnetic radia…
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A nanoscale dielectric gap clamped between two metal electrodes may undergo a large resistance change from insulating to highly conducting upon applying an electrical stress. This sudden resistive switching effect is largely exploited in memristors for emulating synapses in neuromorphic neural networks. Here, we show that resistive switching can be accompanied by a release of electromagnetic radiation spanning the visible spectral region. Importantly, we find that the spectrum is characterized by photon energies exceeding the maximum kinetic energy of electrons provided by the switching voltage. This so-called overbias emission can be described self-consistently by a thermal radiation model featuring an out-of-equilibrium electron distribution generated in the device with an effective temperature exceeding 2000~K. The emitted spectrum is understood in terms of hot electrons radiatively decaying to resonant optical modes occurring in a nanoscale \ch{SiO2} matrix located between two \ch{Ag} electrodes. The correlation between resistive switching and the onset of overbias emission in atomic-scale photonic memristor brings new venues to generate light on chip and their exploitation in optical interconnects. Photons emitted during memristive switching can also be monitored to follow the neural activation pathways in memristor-based networks.
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Submitted 5 December, 2022;
originally announced December 2022.
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Picosecond Time-Scale Resistive Switching Monitored in Real-Time
Authors:
Miklós Csontos,
Yannik Horst,
Nadia Jimenez Olalla,
Ueli Koch,
Ivan Shorubalko,
András Halbritter,
Juerg Leuthold
Abstract:
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling potential and energy efficiency but also in unprecedented speed. Yet, the breakthrough in high-frequency applications still requires the clarification of the domin…
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The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling potential and energy efficiency but also in unprecedented speed. Yet, the breakthrough in high-frequency applications still requires the clarification of the dominant mechanisms and inherent limitations of ultra-fast resistive switching. Here we investigate bipolar, multilevel resistive switchings in tantalum pentoxide based memristors with picosecond time resolution. We experimentally demonstrate cyclic resistive switching operation due to 20 ps long voltage pulses of alternating polarity. Through the analysis of the real-time response of the memristor we find that the set switching can take place at the picosecond time-scale where it is only compromised by the bandwidth limitations of the experimental setup. In contrast, the completion of the reset transitions significantly exceeds the duration of the ultra-short voltage bias, demonstrating the dominant role of thermal diffusion and underlining the importance of dedicated thermal engineering for future high-frequency memristor circuit applications.
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Submitted 14 September, 2022;
originally announced September 2022.
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Carbon ablators with porosity designed for enhanced aerospace thermal protection
Authors:
Erik Poloni,
Florian Bouville,
Alexander L. Schmid,
Pedro I. B. G. B. Pelissari,
Victor C. Pandolfelli,
Marcelo L. C. Sousa,
Elena Tervoort,
George Christidis,
Valery Shklover,
Juerg Leuthold,
André R. Studart
Abstract:
Porous carbon ablators offer cost-effective thermal protection for aerospace vehicles during re-entry into planetary atmospheres. However, the exploration of more distant planets requires the development of ablators that are able to withstand stronger thermal radiation conditions. Here, we report the development of bio-inspired porous carbon insulators with pore sizes that are deliberately tuned t…
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Porous carbon ablators offer cost-effective thermal protection for aerospace vehicles during re-entry into planetary atmospheres. However, the exploration of more distant planets requires the development of ablators that are able to withstand stronger thermal radiation conditions. Here, we report the development of bio-inspired porous carbon insulators with pore sizes that are deliberately tuned to enhance heat-shielding performance by increasing scattering of high-temperature thermal radiation. Pore size intervals that promote scattering are first estimated using an established model for the radiative contribution to the thermal conductivity of porous insulators. On the basis of this theoretical analysis, we identify a polymer additive that enables the formation of pores in the desired size range through the polymerization-induced phase separation of a mixture of phenolic resin and ethylene glycol. Optical and electron microscopy, porosimetry and mechanical tests are used to characterize the structure and properties of porous insulators prepared with different resin formulations. Insulators with pore sizes in the optimal scattering range reduce laser-induced damage of the porous structures by up to 42%, thus offering a promising and simple route for the fabrication of carbon ablators for enhanced thermal protection at high temperatures.
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Submitted 8 October, 2021;
originally announced October 2021.
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Waveguide coupled III-V photodiodes monolithically integrated on Si
Authors:
Pengyan Wen,
Preksha Tiwari,
Svenja Mauthe,
Heinz Schmid,
Marilyne Sousa,
Markus Scherrer,
Michael Baumann,
Bertold Ian Bitachon,
Juerg Leuthold,
Bernd Gotsmann,
Kirsten E. Moselund
Abstract:
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In0.5Ga0.5As/InP p-i-n structure. The waveguide coupled devices show a dark current down to 0.048 A/cm2 at -1 V and a respons…
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The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In0.5Ga0.5As/InP p-i-n structure. The waveguide coupled devices show a dark current down to 0.048 A/cm2 at -1 V and a responsivity up to 0.2 A/W at -2 V. Using grating couplers centered around 1320 nm, we observed a cutoff frequency f3dB exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.
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Submitted 18 May, 2022; v1 submitted 28 May, 2021;
originally announced June 2021.
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Plasmonic Ferroelectric Modulators
Authors:
Andreas Messner,
Felix Eltes,
** Ma,
Stefan Abel,
Benedikt Baeuerle,
Arne Josten,
Wolfgang Heni,
Daniele Caimi,
Jean Fompeyrine,
Juerg Leuthold
Abstract:
Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a temperature stability up to 250°C. Mach-Zehnder interferometer modulators with 10-$μ$m-long phase shifters were operated at 116 Gbit/s PAM-4 and 72 Gbit/s NRZ. Wide…
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Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a temperature stability up to 250°C. Mach-Zehnder interferometer modulators with 10-$μ$m-long phase shifters were operated at 116 Gbit/s PAM-4 and 72 Gbit/s NRZ. Wide and open eye diagrams with extinction ratios beyond 15 dB were found. The fast and robust devices are apt to an employment in industrial environments.
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Submitted 31 October, 2019;
originally announced November 2019.
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Waveguide-integrated van der Waals heterostructure photodetector at telecom band with high speed and high responsivity
Authors:
Nikolaus Flöry,
** Ma,
Yannick Salamin,
Alexandros Emboras,
Takashi Taniguchi,
Kenji Watanabe,
Juerg Leuthold,
Lukas Novotny
Abstract:
Intensive efforts have been devoted to exploit novel optoelectronic devices based on two-dimensional (2D) transition-metal dichalcogenides (TMDCs) owing to their strong light-matter interaction and distinctive material properties. In particular, photodetectors featuring both high-speed and high-responsivity performance are of great interest for a vast number of applications such as high-data-rate…
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Intensive efforts have been devoted to exploit novel optoelectronic devices based on two-dimensional (2D) transition-metal dichalcogenides (TMDCs) owing to their strong light-matter interaction and distinctive material properties. In particular, photodetectors featuring both high-speed and high-responsivity performance are of great interest for a vast number of applications such as high-data-rate interconnects operated at standardized telecom wavelengths. Yet, the intrinsically small carrier mobilities of TMDCs become a bottleneck for high-speed application use. Here, we present high-performance vertical van der Waals heterostructure-based photodetectors integrated on a silicon photonics platform. Our vertical MoTe2/graphene heterostructure design minimizes the carrier transit path length in TMDCs and enables a record-high measured bandwidth of at least 24GHz under a moderate bias voltage of -3 volts. Applying a higher bias or employing thinner MoTe2 flakes boosts the bandwidth even to 50GHz. Simultaneously, our device reaches a high external responsivity of 0.2A/W for incident light at 1300nm, benefiting from the integrated waveguide design. Our studies shed light on performance trade-offs and present design guidelines for fast and efficient devices. The combination of 2D heterostructures and integrated guided-wave nano photonics defines an attractive platform to realize high-performance optoelectronic devices, such as photodetectors, light-emitting devices and electro-optic modulators.
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Submitted 23 April, 2019;
originally announced April 2019.
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500 GHz plasmonic Mach-Zehnder modulator enabling sub-THz microwave photonics
Authors:
Maurizio Burla,
Claudia Hoessbacher,
Wolfgang Heni,
Christian Haffner,
Yuriy Fedoryshyn,
Dominik Werner,
Tatsuhiko Watanabe,
Hermann Massler,
Delwin Elder,
Larry Dalton,
Juerg Leuthold
Abstract:
Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in THz wireless applications demands modulators with frequency responses to the sub-THz range, high power handling and very low nonlinear distortions, simultaneously. However, a modulator with all those characteristics has not been demonstrated to date. Here we exper…
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Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in THz wireless applications demands modulators with frequency responses to the sub-THz range, high power handling and very low nonlinear distortions, simultaneously. However, a modulator with all those characteristics has not been demonstrated to date. Here we experimentally demonstrate that plasmonic modulators do not trade off any performance parameter, featuring - at the same time - a short length of 10s of micrometers, record-high flat frequency response beyond 500 GHz, high power handling and high linearity, and we use them to create a sub-THz radio-over-fiber analog optical link. These devices have the potential to become a new tool in the general field of microwave photonics, making the sub-THz range accessible to e.g. 5G wireless communications, antenna remoting, IoT, sensing, and more.
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Submitted 31 December, 2018;
originally announced January 2019.
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Plasmonically enhanced graphene photodetector featuring 100 GBd, high-responsivity and compact size
Authors:
** Ma,
Yannick Salamin,
Benedikt Baeuerle,
Arne Josten,
Wolfgang Heni,
Yuriy Fedoryshyn,
Alexandros Emboras,
Juerg Leuthold
Abstract:
Graphene has shown great potentials for high-speed photodetection. Yet, the responsivities of graphene-based high-speed photodetectors are commonly limited by the weak effective absorption of atomically thin graphene. Here, we propose and experimentally demonstrate a plasmonically enhanced waveguide-integrated graphene photodetector. The device which combines a 6 micron long layer of graphene with…
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Graphene has shown great potentials for high-speed photodetection. Yet, the responsivities of graphene-based high-speed photodetectors are commonly limited by the weak effective absorption of atomically thin graphene. Here, we propose and experimentally demonstrate a plasmonically enhanced waveguide-integrated graphene photodetector. The device which combines a 6 micron long layer of graphene with field-enhancing nano-sized metallic structures, demonstrates a high external responsivity of 0.5 A/W and a fast photoresponse way beyond 110 GHz. The high efficiency and fast response of the device enables for the first time 100 Gbit/s PAM-2 and 100 Gbit/s PAM-4 data reception with a graphene based device. The results show the potential of graphene as a new technology for highest-speed communication applications.
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Submitted 31 August, 2018;
originally announced August 2018.
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Ab-initio Modeling of CBRAM Cells: from Ballistic Transport Properties to Electro-Thermal Effects
Authors:
Fabian Ducry,
Alexandros Emboras,
Samuel Andermatt,
Mohammad Hossein Bani-Hashemian,
Bojun Cheng,
Juerg Leuthold,
Mathieu Luisier
Abstract:
We present atomistic simulations of conductive bridging random access memory (CBRAM) cells from first-principles combining density-functional theory and the Non-equilibrium Green's Function formalism. Realistic device structures with an atomic-scale filament connecting two metallic contacts have been constructed. Their transport properties have been studied in the ballistic limit and in the presen…
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We present atomistic simulations of conductive bridging random access memory (CBRAM) cells from first-principles combining density-functional theory and the Non-equilibrium Green's Function formalism. Realistic device structures with an atomic-scale filament connecting two metallic contacts have been constructed. Their transport properties have been studied in the ballistic limit and in the presence of electron-phonon scattering, showing good agreement with experimental data. It has been found that the relocation of few atoms is sufficient to change the resistance of the CBRAM by 6 orders of magnitude, that the electron trajectories strongly depend on the filament morphology, and that self-heating does not affect the device performance at currents below 1 $μ$A.
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Submitted 29 November, 2017;
originally announced December 2017.
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Single Atom Plasmonic Switch
Authors:
Alexandros Emboras,
Jens Niegemann,
** Ma,
Christian Haffner,
Mathieu Luisier,
Christian Hafner,
Thomas Schimmel,
Juerg Leuthold
Abstract:
The atom sets an ultimate scaling limit to Moores law in the electronics industry. And while electronics research already explores atomic scales devices, photonics research still deals with devices at the micrometer scale. Here we demonstrate that photonic scaling-similar to electronics-is only limited by the atom. More precisely, we introduce an electrically controlled single atom plasmonic switc…
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The atom sets an ultimate scaling limit to Moores law in the electronics industry. And while electronics research already explores atomic scales devices, photonics research still deals with devices at the micrometer scale. Here we demonstrate that photonic scaling-similar to electronics-is only limited by the atom. More precisely, we introduce an electrically controlled single atom plasmonic switch. The switch allows for fast and reproducible switching by means of the relocation of an individual or at most -- a few atoms in a plasmonic cavity. Depending on the location of the atom either of two distinct plasmonic cavity resonance states are supported. Experimental results show reversible digital optical switching with an extinction ration of 10 dB and operation at room temperature with femtojoule (fJ) power consumption for a single switch operation. This demonstration of a CMOS compatible, integrated quantum device allowing to control photons at the single-atom level opens intriguing perspectives for a fully integrated and highly scalable chip platform -- a platform where optics, electronics and memory may be controlled at the single-atom level.
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Submitted 5 December, 2018; v1 submitted 31 August, 2015;
originally announced August 2015.
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Sub-micron strain analysis of local stick-slip motion of individual shear bands in a bulk metallic glass
Authors:
I. Binkowski,
S. Schlottbom,
J. Leuthold,
S. Ostendorp,
S. V. Divinski,
G. Wilde
Abstract:
Nanodot deposition on a side surface of a rectangular sample and digital image correlation are used to quantify the in-plane strain fields associated with the propagation of a shear band in a PdNiP bulk metallic glass,induced by rolling. Within the resolution of the method related to an average inter-dot distance of 100 nm, deformation is found to be highly localized at the shear bands, while alte…
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Nanodot deposition on a side surface of a rectangular sample and digital image correlation are used to quantify the in-plane strain fields associated with the propagation of a shear band in a PdNiP bulk metallic glass,induced by rolling. Within the resolution of the method related to an average inter-dot distance of 100 nm, deformation is found to be highly localized at the shear bands, while alternating areas with a size of 100 - 400 nm with opposite local shear strains are found. This phenomenon substantiates a local stick-slip nature of shear band propagation during the metallic glass deformation, even during rolling.
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Submitted 8 June, 2015;
originally announced June 2015.
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Optical loss by surface transfer do** in silicon waveguides
Authors:
Luca Alloatti,
Christian Koos,
Juerg Leuthold
Abstract:
We show that undoped silicon waveguides may suffer of up to 1.8 dB/cm free-carrier absorption caused by improper surface passivation. To verify the effects of free-carriers we apply a gate field to the waveguides. Smallest losses correspond to higher electrical sheet resistances and are generally obtained with non-zero gate fields. The presence of free carriers for zero gate field is attributed to…
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We show that undoped silicon waveguides may suffer of up to 1.8 dB/cm free-carrier absorption caused by improper surface passivation. To verify the effects of free-carriers we apply a gate field to the waveguides. Smallest losses correspond to higher electrical sheet resistances and are generally obtained with non-zero gate fields. The presence of free carriers for zero gate field is attributed to surface transfer do**. These results open new perspectives for minimizing propagation losses in silicon waveguides and for obtaining low-loss and highly conductive silicon films without applying a gate voltage.
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Submitted 28 April, 2015;
originally announced April 2015.
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Second-order nonlinear optical metamaterials: ABC-type nanolaminates
Authors:
Luca Alloatti,
Clemens Kieninger,
Andreas Froelich,
Matthias Lauermann,
Tobias Frenzel,
Kira Koehnle,
Wolfgang Freude,
Juerg Leuthold,
Martin Wegener,
Christian Koos
Abstract:
Structuring optical materials on a nanometer scale can lead to artificial effective media, or metamaterials, with strongly altered optical behavior. Metamaterials can provide a wide range of linear optical properties such as negative refractive index, hyperbolic dispersion, or magnetic behavior at optical frequencies. Nonlinear optical properties, however, have only been demonstrated for patterned…
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Structuring optical materials on a nanometer scale can lead to artificial effective media, or metamaterials, with strongly altered optical behavior. Metamaterials can provide a wide range of linear optical properties such as negative refractive index, hyperbolic dispersion, or magnetic behavior at optical frequencies. Nonlinear optical properties, however, have only been demonstrated for patterned metallic films which suffer from high optical losses. Here we show that second-order nonlinear metamaterials can also be obtained from non-metallic centrosymmetric constituents with inherently low optical absorption. In our proof-of-principle experiments, we have iterated atomic-layer deposition (ALD) of three different constituents, A = Al$_2$O$_3$, B = TiO$_2$ and C = HfO$_2$. The centrosymmetry of the resulting ABC stack is broken since the ABC and the inverted CBA sequences are not equivalent - a necessary condition for non-zero second-order nonlinearity. To the best of our knowledge, this is the first realization of a bulk nonlinear optical metamaterial.
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Submitted 3 April, 2015; v1 submitted 1 April, 2015;
originally announced April 2015.
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Coherent terabit communications with microresonator Kerr frequency combs
Authors:
Joerg Pfeifle,
Victor Brasch,
Matthias Lauermann,
Yimin Yu,
Daniel Wegner,
Tobias Herr,
Klaus Hartinger,
Philipp Schindler,
**gshi Li,
David Hillerkuss,
Rene Schmogrow,
Claudius Weimann,
Ronald Holzwarth,
Wolfgang Freude,
Juerg Leuthold,
Tobias J. Kippenberg,
Christian Koos
Abstract:
Optical frequency combs enable coherent data transmission on hundreds of wavelength channels and have the potential to revolutionize terabit communications. Generation of Kerr combs in nonlinear integrated microcavities represents a particularly promising option enabling line spacings of tens of GHz, compliant with wavelength-division multiplexing (WDM) grids. However, Kerr combs may exhibit stron…
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Optical frequency combs enable coherent data transmission on hundreds of wavelength channels and have the potential to revolutionize terabit communications. Generation of Kerr combs in nonlinear integrated microcavities represents a particularly promising option enabling line spacings of tens of GHz, compliant with wavelength-division multiplexing (WDM) grids. However, Kerr combs may exhibit strong phase noise and multiplet spectral lines, and this has made high-speed data transmission impossible up to now. Recent work has shown that systematic adjustment of pump conditions enables low phase-noise Kerr combs with singlet spectral lines. Here we demonstrate that Kerr combs are suited for coherent data transmission with advanced modulation formats that pose stringent requirements on the spectral purity of the optical source. In a first experiment, we encode a data stream of 392 Gbit/s on subsequent lines of a Kerr comb using quadrature phase shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM). A second experiment shows feedback-stabilization of a Kerr comb and transmission of a 1.44 Tbit/s data stream over a distance of up to 300 km. The results demonstrate that Kerr combs can meet the highly demanding requirements of multi-terabit/s coherent communications and thus offer a solution towards chip-scale terabit/s transceivers.
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Submitted 22 February, 2014; v1 submitted 3 July, 2013;
originally announced July 2013.
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Single-laser 32.5 Tbit/s Nyquist WDM transmission
Authors:
David Hillerkuss,
Rene Schmogrow,
Matthias Meyer,
Stefan Wolf,
Meinert Jordan,
Philipp Kleinow,
Nicole Lindenmann,
Philipp C. Schindler,
Argishti Melikyan,
Xin Yang,
Shalva Ben-Ezra,
Bernd Nebendahl,
Michael Dreschmann,
Joachim Meyer,
Francesca Parmigiani,
Periklis Petropoulos,
Bojan Resan,
Aandreas Oehler,
Kurt Weingarten,
Lars Altenhain,
Tobias Ellermeyer,
Matthias Moeller,
Michael Huebner,
Juergen Becker,
Christian Koos
, et al. (2 additional authors not shown)
Abstract:
We demonstrate 32.5 Tbit/s 16QAM Nyquist WDM transmission over a total length of 227 km of SMF-28 without optical dispersion compensation. A number of 325 optical carriers are derived from a single laser and encoded with dual-polarization 16QAM data using sinc-shaped Nyquist pulses. As we use no guard bands, the carriers have a spacing of 12.5 GHz equal to the Nyquist bandwidth of the data. We ach…
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We demonstrate 32.5 Tbit/s 16QAM Nyquist WDM transmission over a total length of 227 km of SMF-28 without optical dispersion compensation. A number of 325 optical carriers are derived from a single laser and encoded with dual-polarization 16QAM data using sinc-shaped Nyquist pulses. As we use no guard bands, the carriers have a spacing of 12.5 GHz equal to the Nyquist bandwidth of the data. We achieve a high net spectral efficiency of 6.4 bit/s/Hz using a software-defined transmitter which generates the electrical modulator drive signals in real-time.
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Submitted 27 January, 2016; v1 submitted 12 March, 2012;
originally announced March 2012.
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Photonic Wire Bonds for Terabit/s Chip-to-Chip Interconnects
Authors:
Nicole Lindenmann,
Gerhard Balthasar,
David Hillerkuss,
Rene Schmogrow,
Meinert Jordan,
Juerg Leuthold,
Wolfgang Freude,
Christian Koos
Abstract:
Photonic integration has witnessed tremendous progress over the last years, and chip-scale transceiver systems with Terabit/s data rates have come into reach. However, as on-chip integration density increases, efficient off-chip interfaces are becoming more and more crucial. A technological breakthrough is considered indispensable to cope with the challenges arising from large-scale photonic integ…
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Photonic integration has witnessed tremendous progress over the last years, and chip-scale transceiver systems with Terabit/s data rates have come into reach. However, as on-chip integration density increases, efficient off-chip interfaces are becoming more and more crucial. A technological breakthrough is considered indispensable to cope with the challenges arising from large-scale photonic integration, and this particularly applies to short-distance optical interconnects. In this letter we introduce the concept of photonic wire bonding, where transparent waveguide wire bonds are used to bridge the gap between nanophotonic circuits located on different chips. We demonstrate for the first time the fabrication of three-dimensional freeform photonic wire bonds (PWB), and we confirm their viability in a multi-Terabit/s data transmission experiment. First-generation prototypes allow for efficient broadband coupling with overall losses of only 1.6 dB. Photonic wire bonding will enable flexible optical multi-chip assemblies, thereby challenging the current paradigm of highly-complex monolithic integration.
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Submitted 2 November, 2011;
originally announced November 2011.
